Agilent ACPM-7813 CDMA/AMPS Power Amplifier Module Data Sheet Features • Operating frequency: 824 – 849 MHz • 28.5 dBm linear output power @ 3.4 V • High efficiency: 40% PAE Description The ACPM-7813 is a fully matched CDMA Power amplifier module. Designed around Agilent Technologies’ new Enhancement Mode pHEMT process, the ACPM-7813 offers premium performance in a very small form factor. Fully matched to 50 Ohms on the input and output. The amplifier has excellent ACPR and efficiency performance at max Pout and low quiescent • Dynamic bias control for low midpower Idd current with a single bias control voltage. For even lower quiescent current, a dynamic bias control circuit can be used by varying the voltage on the Vcntl pin between 1.2V to 2.5V. Designed in a surface mount RF package, the ACPM-7813 is cost and size competitive. The ACPM-7813 is another key component of the Agilent CDMAdvantage RF chipset. • Very low quiescent current with single control voltage • Internal 50 ohm matching networks for both RF IN/OUT • 3.2 – 4.2V linear operation • cdma2000 1xRTT capable • Only 3 SMT parts needed • 4.0 x 4.0 x 1.1 mm SMT package Applications • CDMA handsets • Datacards Vdd1 Vbias • PDAs Vdd2 Bias Circuit Input Power Input Match On Chip Inter-stage Match Passive Output Match Output Vcntl Single control bias setting for low Idq and 40%PAE at Pout = 28.5 dBm Maximum Ratings  Parameter Min. Max. Vdd Supply Voltage 6.0 V Power Dissipation  2.5 W Bias Current 1.5 A Control Voltage (Vcntl) 3.0 V Amplifier Input RF Power 10 dBm Junction Temperature +150°C Storage Temperature (case temperature) -40°C Thermal Resistance θjc = 22.3°C/W Recommended operating range of Vdd = 3.2 to 4.2 V, Ta = -30 to +85°C +100°C Notes: 1. Operation of this device in excess of any of these limits may cause permanent damage. 2. Tcase = 25°C Package Marking and Dimensions Gnd (Pin 10) Vbias (Pin 1) Vcntl Gnd Agilent ACPM-7813 YYWWDD XXXX Gnd RFout RFin Gnd Vdd2 4.0 mm (sq) Gnd Vdd1 1.1 mm Top View Side View Bottom View Note: YYWWDD: year – work week – day XXXX: lot code 0.400±0.076 0.850±0.076 2.000±0.076 0.850±0.076 0.850±0.076 4.000±0.076 0.850±0.076 3.800±0.076 1.996±0.076 3.400±0.076 4.000±0.076 1.100±0.076 All units are in mm 2 Electrical Characterization Information All tests are done in 50Ω system at Vdd1=Vdd2=Vbias = 3.4V, 25°C, unless noted otherwise. Parameter Units Min Typ Max Comments MHz 824 dB 26 28 30 Vcntl= 2.5V 24.5 26.5 28.5 Vcntl= 1.8V Cellular CDMA Frequency Range 849 Gain (Fixed Cntl Voltage) Pout = 28.5 dBm Pout = 16 dBm Power Added Efficiency Pout = 28.5 dBm % 37 40 Vcntl= 2.5V Pout = 16 dBm % 7.5 8.5 Vcntl= 1.8V Total Supply Current mA mA mA 520 135 31 ACPR @ ± 0.885 MHz offset dBc/30 kHz -45 -48 Pout ≤ 28.5 dBm ACPR @ ± 1.98 MHz offset dBc/30 kHz -56 -59 Pout ≤ 28.5 dBm Quiescent Current mA mA mA 82 54 25 95 62 Pout ≤ 28.5 dBm, Vcntl= 2.5V Vcntl = 1.8V Vcntl = 1.2V Vcntl Current mA 2.0 2.7 Vcntl = 2.5V Input VSWR (Pout = 28.5 dBm) 563 156 Pout = 28.5 dBm, Vcntl = 2.5V Pout =16 dBm, Vcntl = 1.8V Pout = -5 dBm, Vcntl = 1.2V 2.0:1 Input VSWR (Pout = 16 dBm) 2.5:1 Noise Figure dB 4.5 Noise Power @ 45 MHz offset in 869 – 894 MHz dBm/Hz -141 Stability (Spurious): Load VSWR 5:1 dBc -50 Harmonic Suppression: 2Fo dBc -30 Frequency Range MHz 824 Gain Pout = 31.0 dBm dB 26 28 % 47 51 -138 All phases -40 AMPS 849 30 Vcntl= 2.5V Power Added Efficiency Pout = 31.0 dBm 3 Vcntl= 2.5V Typical Performance, data measured in 50Ω system, Vdd1=Vdd2=Vbias = 3.4V, Vcntl = 2.5 V, T = 25°C and Freq = 836 MHz unless noted otherwise. 30 40 40 29 35 20 30 26 25 Vcntl=2.5V Vcntl=1.6V Vcntl=1.2V 24 0 PAE (%) 27 GAIN (dB) GAIN (dBm) 28 -20 25 20 15 10 -40 23 5 22 -60 0 5 10 15 20 25 30 0 0 0.4 0.8 1.2 1.6 2.0 2.4 0 2.8 5 Vcntl (V) Pout (dB) 20 25 30 Figure 3. PAE vs. Pout. 200 500 15 Pout (dBm) Figure 2. Gain vs. Vcntl. Figure 1. Gain vs. Pout. 10 -40 -45 400 200 -50 ACPR (dBc) 300 Idd (mA) Idd (mA) 150 100 0 0 5 10 15 20 25 0 30 Vcntl=2.5V Vcntl=1.6V Vcntl=1.2V Vcntl=1.2V Vcntl=1.6V Vcntl=2.5V -70 -75 0 5 Pout (dBm) 10 15 20 0 5 -65 -70 -75 -80 25 30 2nd 3rd 29 -40 GAIN (dB) HARMONIC SUPPRESSION (dBc) -60 20 30 -30 -55 15 Figure 6. ACPR (885 kHz offset) vs. Pout. Figure 5. Idd vs. Pout. -50 10 Pout (dBm) Pout (dB) Figure 4. Idd vs. Output Power. ACPR2 (dBc) -60 -65 50 100 -55 -50 -60 28 27 26 -70 -85 -90 0 5 10 15 20 25 30 Figure 7. ACPR (1.98 MHz offset) vs. Pout. 60 50 PAE (%) 40 30 20 10 15 20 25 Pout (dBm) Figure 10. AMPS PAE vs. Pout. 4 15 20 25 Pout (dBm) Pout (dBm) 0 10 -80 10 30 35 Figure 8. 2nd/3rd Harmonics vs. Pout. 30 25 10 15 20 25 Pout (dBm) Figure 9. AMPS Gain vs. Pout. 30 35 Ordering Information Part Number No. of Devices Container ACPM-7813-BLK 10 Bulk ACPM-7813-TR1 1000 7” Tape and Reel Tape Dimensions and Orientation 0.30 ± 0.05 4.00 ± 0.10 2.00 ± 0.05 1.75 ± 0.10 φ1.55 ± 0.05 5.50 ± 0.05 CL 12.00 ± 0.30 4.38 ± 0.10 4.38 ± 0.10 φ1.50 (MIN) 1.80 ± 0.10 8.00 ± 0.10 4.38 ± 0.10 Notes: 1. Measured from centerline of sprocket hole to centerline of pocket 2. Cumulative tolerance of 10 sprocket holes is ±0.2 mm 3. All dimensions in millimeters unless otherwise stated. Agilent ACPM-7813 YYWWDD XXXX 5 Reel Drawing BACK VIEW Shading indicates thru slots 18.4 max. 178 +0.4 –0.2 50 min. 25 min wide (ref) Slot for carrier tape insertion for attachment to reel hub (2 places 180° apart) 12.4 +2.0 –0.0 FRONT VIEW 1.5 min. 13.0±0.2 21.0±0.8 6 NOTES: 1. Reel shall be labeled with the following information (as a minimum). a. manufacturers name or symbol b. Agilent Technologies part number c. purchase order number d. date code e. quantity of units 2. A certificate of compliance (c of c) shall be issued and accompany each shipment of product. 3. Reel must not be made with or contain ozone depleting materials. 4. All dimensions in millimeters (mm) Application Information The • • • • • • following material is presented to assist in general design and use of the APCM-7813. 3.0V Characterization, for use in Data Card Applications cdma2000 1XRTT Description and Characterization data Design tips on various methods to control the bias on Vcntl pin Description of ACPR measurement methods Description of Agilent evaluation demoboard for ACPM-7813 IR Reflow Profile (applicable for all Agilent E-pHEMT PAs) 3.0 V Characterization, Data Card Applications Electrical Data All tests are done in 50Ω system at Vdd1=Vdd2=Vbias = 3.0V, 25°C, unless noted otherwise. Parameter Units Min MHz 824 Typ Max Comments 800 MHz CDMA Frequency Range 849 Gain (Fixed Cntl Voltage) (Pout = 28.5 dBm) dB 26 Vcntl = 2.5V (Pout = 13 dBm) dB 28 Vcntl = 2.5V (Pout = -5 dBm) dB 28 Vcntl = 2.5V Power Added Efficiency Pout = 28.5 dBm % 42 Vcntl = 2.5V Pout = 16 dBm % 8.5 Vcntl = 2.5V Total Supply Current mA 500 Pout = 28.5 dBm, Vcntl= 2.5V 100 Pout = 13 dBm, Vcntl= 1.6V 30 Pout = -5 dBm, Vcntl= 1.2V ACPR @ ± 0.885 MHz offset dBc/30 kHz -43 Pout ≤ 28.5 dBm ACPR @ ± 1.98 MHz offset dBc/30 kHz -56 Pout ≤ 28.5 dBm Quiescent Current mA 60 Pout ≤ 28.5 dBm, Vcntl = 2.5V Input VSWR (Pout = 28.5 dBm) 2.0:1 (Pout = 16 dBm) 2.5:1 Noise Figure dB 4.5 Noise Power @ 45 MHz offset in 869 – 894 MHz dBm/Hz -141 Stability (Spurious): Load VSWR 5:1 dBc -50 2Fo dBc -40 3Fo dBc -40 Harmonic Suppression 7 All phases Typical Performance, data measured in 50Ω system, Vdd1=Vdd2=Vbias = 3.0V, Vcntl = 2.5 V, T = 25°C and Freq = 836 MHz. 30 500 45 40 29 400 35 27 Idd (mA) PAE (%) GAIN (dB) 30 28 25 20 300 200 15 10 26 100 5 0 0 25 0 5 10 15 20 25 30 0 5 Pout (dBm) 25 0 30 5 10 -50 -45 -55 -60 -65 -65 -70 -75 -90 0 5 10 15 20 25 30 Pout (dBm) 40 20 0 -20 -40 -60 0 0.4 0.8 1.2 1.6 Vcntl (V) Figure 17. Gain vs. Vcntl. 0 5 10 15 20 25 30 Pout (dBm) Figure 14. ACPR (885 kHz offset) vs. Pout. 2.0 2.4 2.8 30 -40 -50 -60 -70 2nd 3rd -85 -75 25 -30 -80 -70 20 Figure 13. Idd vs. Pout. -60 -55 15 Pout (dBm) HARMONIC SUPPRESSION (dBc) -40 ACPR2 (dBc) ACPR1 (dBc) 20 Figure 12. PAE vs. Pout. -50 GAIN (dB) 15 Pout (dBm) Figure 11. Gain vs. Pout. 8 10 Figure 15. ACPR (1.98 MHz offset) vs. Pout. -80 10 15 20 25 Pout (dBm) Figure 16. 2nd/3rd Harmonics vs. Pout. 30 cdma 2000 1xRTT Characterization System Description being an extension of the IS-95 standard, has a chip rate of 1.2288Mchip/s. However, in 1xRTT, the reverse link transmits more than one code channel to accommodate the high data rates. The minimum configuration consists of a reverse pilot (R-Pilot) channel for synchronous detection by the Base Transceiver System (BTS) and a CDMA2000 is the TIA’s standard for third generation (3G) technology and is an evolution of the IS-95 CDMA format. CDMA2000 includes 1X RTT in the singlecarrier mode and 3X RTT in the multi-carrier mode. This paper describes the CDMA2000 1X RTT approach and its performance with Agilent 4x4 CDMA PAs, ACPM-7813. CDMA2000 1X RTT, reverse fundamental channel (R-FCH) for voice. Additional channels such as the reverse supplemental channels (R-SCHs) and the reverse dedicated channel (R-DCCH) are used to send data or signaling information. Channels can exist at different rates and power levels. Table 1 shows the transmitter specification in CDMA2000 reverse link. Table 1. Transmitter Specification in Reverse Link. Specification Spread Rate1 ERP at Maximum Lower limit +23 dBm Output Power Upper limit +30 dBm Minimum Controlled Output Power -50 dBm/1.23 MHz Waveform Quality Factor and Frequency Accuracy >0.944 Spurious Emission at Maximum RF output power offset frequency within the range SR1, Band Class 0(Cellular band) SR1, Band Class1(PCS band) 885 kHz to 1.98 MHz Less stringent of -42 dBc/30 kHz or -54 dBm/1.23 MHz 1.25 MHz to 1.98 MHz Less stringent of -42 dBc/30 kHz or -54 dBm/1.23 MHz 1.98 MHz to 3.125 MHz Less stringent of -54 dBc/30 kHz or -54 dBm/1.23 MHz 1.98 MHz to 2.25 MHz Less stringent of -50 dBc/30 kHz or -54 dBm/1.23 MHz 3.125 MHz to 5.625 MHz -13 dBm/100 kHz 2.25 MHz to 6.25 MHz -13 dBm/1 MHz Typical channel configurations below are based on the transmitter test condition in the reverse link. 1) “Basic” Voice only configuration – R-PICH @ -5.3 dB – R-PICH @ -5.3 dB – R-FCH @ -1.5 dB 9.6 kbps – R-FCH @ -3.85 dB 9.6 kbps 2) Voice and Data configuration – R-PICH @ -5.3 dB 9 3) Voice and Control configuration – R-DCCH @ -3.85 dB 9.6 kbps 4) Control channel only configuration – R-FCH @ -4.54 dB 9.6 kbps – R-PICH @ -5.3 dB – R-SCH1 @ -4.54 dB 9.6 kbps – R-DCCH @ -1.5 dB 9.6 kbps Combinations of these channels will increase the peak to average power ratio for higher data rates. The complementary cumulative distribution function (CCDF) measurement characterizes the peak to average power statistics of CDMA2000 reverse link. For reference, the system specifications of peak to average power ratio of IS-95 and CDMA2000 IX RTT are 3.9 dB and 5.4 dB at 1% CCDF respectively. Higher peak to average power ratio requires a higher margin, both in higher power gain and in improved thermal stability for PA linearity to meet the minimum system specifications. The test results below for the ACPM-7813 show the compliance to the system linearity specifications with 4 channel configurations, representing a broad cross-section of CDMA2000 1X RTT environments. Test result of ACPM-7813 using CDMA2000 1X RTT signal Test condition - PA Evaluation board with Vdd1=Vdd2=Vbias = 3.4V, Vcntl = 2.5V, Frequency = 836 MHz. Test result with each channel configuration. Channel IVdd(mA) Pin(dBm) -885 kHz ACPR(dBc) +885 kHz ACPR(dBc) -1.98 MHz ACPR(dBc) +1.98 MHz ACPR(dBc) Pout(dBm) Basic 481.0 0.20 -56.5 -56 -68.1 -68.1 28 Voice+Data 470.0 0.52 -46.8 -47.2 -62.2 -62.1 28 Voice+Cntl 481.0 0.68 -44.9 -45.0 -61.8 -61.8 28 Cntl only 327.0 -2.40 -53.2 -52.9 -66.9 -67.5 25.5 EIA/TIA-98-D indicates a 2.5 dB allowed back off in power for control channel only configuration. Peak to average power ration (Pout = 16 dBm) CCDF(%) Basic Voice + Data Voice + CNTL CNTL only 10 1.85 3.07 3.10 3.76 1 3.25 4.28 4.66 5.29 0.1 4.06 5.06 5.55 6.17 0.01 4.49 5.55 5.97 6.58 0.001 4.68 5.87 6.20 6.76 0.0001 4.76 5.92 6.39 6.82 10 Design Tips to use Vcntl pin Power Amplifier Control Using Vcntl Pin on ACPM-7813 Power amplifier control scheme in CDMA systems is one of the important and challenging aspects of CDMA-based handset design. Handset designers must balance maintaining adequate linearity while optimizing efficiency at high, medium and low output power levels. The primary method to achieve these goals is to adjust the bias of the PA as a function of output power. Theoretically, the best efficiency would be achieved when the bias of the PA is continually adjusted based on the output power requirement of the PA. However, implementing this type of circuit can be complex and costly. Therefore several different approaches have been developed to provide an acceptable tradeoff between optimum efficiency and optimum manufacturability. This application section reviews four methods of controlling the bias of a CDMA power amplifier: fixed, step, logical and dynamic. 1. Fixed Bias Control Using a fixed bias point on the PA is the traditional method, and it is the simplest. For example, a fixed control voltage of 2.5V is recommended when using Agilent’s Power Amplifier, 2.5V Vcntl for ACPM-7813. The Vcntl pin on the PA is controlled by PA_ON pin of the baseband IC. When PA_ON is HIGH, the output RF signal of the PA is enabled, enabling the subscriber unit to transmit the required data. The switch circuit also controls the on/off state of the PA. Below is an example of how to control the operation of the ACPM-7813 using the PA_ON and Vcntl pin of the PA. Power Mode PA_ON Vcntl Power Range Shut Down LOW 0V — High Power HIGH 2.5V ≤ 28.5 dBm Battery To Duplexer Vbias Vdd2 Vdd1 PA Vcntl TxIC Enable Baseband IC PA_ON Switch Circuit for PA Vcntl PMIC or LDO 11 Note: PMIC: Power Management IC LDO: Low Drop Output (Regulator) 2. Step Bias Control and Dynamic Bias Control (if controled PDM1) The PDM1 output from the baseband IC can be used to create a software-programmable voltage, to be used at the phone designer’s discretion. To get high efficiency and better ACPR, the phone designers can change control voltage of the PA by adjusting PDM1 voltage according to output power of PA. A caution when using this approach — careful consideration must be made to to avoid an abrupt discontinuity in the output signal when the step bias control voltage is applied. The figure below is an example of how to control the PA for multiple bias points using the PA_ON and Vcntl pin. Power Mode PA_ON Vcntl Power Range Shut Down LOW 0V — Low Power HIGH 1.2V ~ -5 dBm Mid Power HIGH 1.6V -5 dBm ~ 13 dBm High Power HIGH 2.5V 13 dBm ~ 28.5 dBm Battery To Duplexer Vbias Vdd2 Vdd1 PA Baseband IC TxIC Vcntl PA_ON Enable R1 Switch Circuit for PA C1 If PDM1 can be controlled then same circuit can be used for Dynamic bias control. 12 PDM1 3. Dynamic Bias Control Alternate Implementation Phone designers can use TX_ADC_ADJ pin of the baseband IC to get dynamic bias control with Vcntl pin of PA. TX_ADC_ADJ is a PDM output pin produced by the TX AGC subsystem and used to control the gain of the Tx signal prior to the PA. The variable output levels from two inverting operational amplifiers, generated and compared by TX_ADC_ADJ, provide dynamic control voltages for the Vcntl of 1.0V ~ 2.7V with a 0.1V step. Battery To Duplexer Vbias Vdd2 Vdd1 PA Vcntl TxIC Baseband IC Vcontrol Enable Switch Circuit PA_ON R5 R3 _ R4 V1 R1 _ + R2 Vin C1 TX_ADC_ADJ Av = -(V1/Vin) = -R3/R2, V1 = -(R3/R2)Vin, Vo = -(R5/R4)V1= [(R5*R3)/(R4*R2)]*Vin The using of combination of two pins, PDM1 and TX_ADC_ADJ, is another method of realizing a dynamic bias control scheme. The two OP Amps control the Vcntl voltage levels with compared and integrated circuits. Battery To Duplexer Vbias Vdd2 Vdd1 PA Vcntl TxIC Baseband IC Vcontrol PA_ON Enable Switch Circuit _ _ TX_ADC_ADJ + + PDM1 13 ACPR Measurement Method Adjacent-channel power ratio (ACPR) is used to characterize the distortion of power amplifiers and other subsystems for their tendency to cause interference with neighboring radio channels or systems. The ACPR measurement often is specified as the ratio of the power spectral density (PSD) of the CDMA main channel to the PSD measured at several offset frequencies. For the Cellular band (824 ~ 849 MHz transmitter channel), the two offsets are at ±885 kHz and ±1.98 MHz and the measurement resolution bandwidth specified is 30 kHz. These offsets are at ±1.25 MHz and ±1.98 MHz for the PCS band (1850 ~ 1910 MHz transmitter channel). 1.23 MHz 0 -10 1st ACPR (dBc) -20 30 kHz -40 -50 2nd ACPR (dBc) 30 kHz -30 30 kHz 1st ACPR-L 1st ACPR-U Offset frequency -60 -70 -80 2nd ACPR-L = 1.98 MHz 2nd ACPR-U = 1.98 MHz FREQUENCY (MHz) Figure 18. CDMA Adjacent-Channel Power Ratio Measurement. 14 30 kHz ACPR Testing Diagram Test PA Test Setup DC Power Supply CH1 CH2 CH3 CH4 8593E Spectrum Analyzer Vbias Vcntl Power Divider 20 dB Attenuator E4406A VSA Transmitter Tester CDMA PA ACPM-7813 Figure 19. ACPR test equipment setup. ACPM-7813 Test Result using VSA Transmitter Tester Figure 20. ACPR measurement using VSA Transmitter tester. 15 Vdd2 Vdd1 3 dB Attenuator E4437B CDMA Signal Generator ACPR Test Results using Spectrum Analyzer REF 42.8 dBm Mkr 836 MHz 35.42 dBm AT 30 dB RBW = 1.0 MHz RBW = 300 kHz RBW = 30 kHz Center 836 MHz Span 5.000 MHz SWP 2.00 sec VBW 100 kHz Figure 21. Example ACPR measurement using Spectrum Analyzer. The meaning of 16 dB The accurate ACPR measurement using Spectrum Analyzer needs to consider the normalization factor that is dependent on the Resolution Bandwidth, RBW, settings. The above figure (measurement shown at 836 MHz for general example) shows a comparison of the different ACPR measurement results as a function of various RBW values. As the RBW is reduced, less power is captured during the measurement and consequently the channel power is recorded as a 16 smaller value. For example, if the main channel power is measured as 28 dBm in a 1.23 MHz bandwidth, its power spectral density is 28 dBm/1.23 MHz, which can be normalized to 11.87 dBm/ 30 kHz. The equation used to calculate the normalization factor of power spectral density is: Normalization Factor = 10log[Normalization BW/Current BW (Spectrum Analyzer RBW)] = 10log[1.23X106/30X103] = 16.13 dB Since the ACPR in an IS95 system is specified in a 1.23 MHz bandwidth, a channel power that is measured using a different RBW, can be normalized to reflect the channel power as if it was measured in a 1.23 MHz bandwidth. The difference in channel power measured in 30 kHz bandwidth and the channel power measured in a 1.23 MHz bandwidth is 16 dB. ACPM-7813 Demoboard Operation Instructions 1) Module Description GND Vbias GND Vcntl 4700 pF The ACPM-7813 is a fully matched Power Amplifier. The sample devices are provided on a demonstration PC Board with SMA connectors for RF inputs and outputs, and a DC connector for all bias and control I/O’s. Please refer to Figures 22 through 25 and the Pin configuration table for I/O descriptions and connections. Vbias 470 pF RF Out RFout GND GND RFin Vcntl RFin GND Vdd1 Vdd2 2.2 µF 470 pF 4700 pF Vdd1 Vdd2 Vdd2 GND Vbias Vdd1 GND Figure 22. ACPM-7813 Evaluation Board Schematic and Layout. 800 MHz C1 RF in C2 RF out C3 C5 Figure 23. Layer 1 – Top Metal & Solder Mask. 17 C4 C6 2.2 µF C1 = 4700 pF C2 = 470 pF C3 = 470 pF C4 = 4700 pF C5 = 2.2 µF C6 = 2.2 µF Figure 24. Layer 2 – Ground. Figure 25. Layer 3 – Bottom Metal & Solder Mask. PIN Configuration Table Top side Back side 1 GND 1b Vdd2 (s) 2 Vdd1 2b GND 3 Vbias 3b Vbias (s) 4 GND 4b Vcntl 5 Vdd2 5b Vdd1 (s) 18 2) Circuit Operation 5) Testing The design of the power module (PAM) provide bias control via Vcntl to achieve optimal RF performance and power control. The control pin is labeled Vref (Vcntl). Please refer to Figure 26 for the block diagram of this PAM. - Signal Source The CDMA modulated signal for the test is generated using an Agilent ESG-D4000A (or ESGD3000A) Digital Signal Generator with the following settings: CDMA Setup : Reverse Spreading: On Bits/Symbol: 1 Data: PN15 Modulation: OQPSK Chip Rate: 1.2288 Mcps High Crest: On Filter: Std Phase Polarity: Invert Typical Operation Conditions (Vdd1=Vdd2=Vbias = 3.0V) Parameter ACPM-7813 Frequency Range 824 – 849 MHz Output Power 28.5 dBm Vcntl 2.5 V - ACPR Measurement The ACPR (and channel power) is measured using an Agilent 4406 VSA with corresponding ACPR offsets for IS-98c and JSTD-8. Averaging of 10 is used for ACPR measurements. 3) Maximum Ratings Vdd 5.0V Drain Current 1.5A Vcntl 3V RF input 10 dBm Temperature -30 to 85°C Please Note: Avoid Electrostatic Discharge on all I/O’s. 4) Heat Sinking The demonstration PC Board provides an adequate heat sink. Maximum device dissipation should be kept below 2.5 Watts. Vdd1 - DC Connection A DC Connector is provided to allow ease of connection to the I/O’s. Wires can be soldered to the connector pins, or the connector can be removed and I/O’s contacted via clip leads or direct soldered connections. The wiring of I/O’s are listed in Figure 1 through 3 and Pin Vbias Vdd2 Bias Circuit Input Passive Input Match On Chip Inter-stage Match Passive Output Match Output Vcntl Figure 26. Power Module Block Diagram. 19 Single control bias setting for low Idq and 40% PAE at Pout = 28.5 dBm configuration table. The Vdd sense connections are provided to allow the use of remotesensing power supplies for compensation of PCB traces and cable resistance. - Device Operation 1) Connect RF Input and Output for the band under test. 2) Terminate all unused RF ports into 50 Ohms. 3) Connect Vdd1 and Vdd2 supplies (including remote sensing labeled Vdd1 S and Vdd2 S on the board). Nominal voltage is 3.4V. 4) Connect Vcntl supply and set reference voltage to the voltage shown in the data packet. Note that the Vcntl pin is on the back side of the demonstration board. Please limit Vcntl to not exceed the corresponding listed “DC Biasing Condition” in the Data Packet. Note that increasing Vcntl over the corresponding listed “DC Biasing Condition” can result in power decrease and current can exceed the rated limit. 5) Apply RF input power according to the values listed in “Operation Data” in Data Packet. 6) Power down in opposite sequence. IR Reflow Soldering Figure 27 is a straight-line representation of the recommended nominal time-temperature profile from JESD22-A113-B IR reflow. TEMPERATURE (°C) 235 200 183 150 60 to 150s above 183°C 100 50 0 30 60 Preheat Zone 90 120 150 180 TIME (seconds) Soak Zone 210 Reflow Zone Figure 27. Time-temperature Profile for IR Reflow Soldering Process. Table 2. IR Reflow Process Zone. Process Zone ∆Temperature ∆Temperature/∆Time Preheat Zone 25°C to 100°C 3°C/s MAX Soak Zone 100°C to 150°C 0.5°C/s MAX (120s MAX) Reflow Zone 150°C to 235°C (240°C MAX) 235°C to 150°C 4.5°C/s TYP -4.5°C/s TYP Cooling Zone 150°C to 25°C -6°C/s MAX Table 3. Classification Reflow Profiles. Convection or IR/Convection Average ramp-up rate (183°C to peak) 3°C/second max. Preheat temperature 125 (± 25)°C 120 seconds max. Temperature maintained above 183°C 60 – 150 seconds Time within 5°C of actual peak temperature 10 – 20 seconds Peak temperature range 220 +5/-0°C or 235 +5/-0°C Ramp-down rate 6°C/second max. Time 25°C to peak temperature 6 minutes max. Note: All temperatures measured refer to the package body surface. 20 240 270 Cooling Zone 300 Zone 1 – Preheat Zone The average heat up rate for surface-mount component on PCB shall be less than 3°C/ second to allow even heating for both the component and PCB. This ramp is maintained until it reaches 100°C where flux activation starts. Zone 2 – Soak Zone The flux is being activated here to prepare for even and smooth solder joint in subsequent zone. The temperature ramp is kept gradual to minimize thermal mismatch between solder, PC Board and components. Overramp rate here can cause solder splatter due to excessive oxidation of paste. Zone 3 – Reflow Zone The third process zone is the solder reflow zone. The temperature in this zone rises rapidly from 183°C to peak temperature of 235°C for the solder to trans- form its phase from solid to liquids. The dwell time at melting point 183°C shall maintain at between 60 to 150 seconds. Upon the duration of 10-20 seconds at peak temperature, it is then cooled down rapidly to allow the solder to freeze and form solid. Extended duration above the solder melting point can potentially damage temperature sensitive components and result in excessive inter-metallic growth that causes brittle solder joint, weak and unreliable connections. It can lead to unnecessary damage to the PC Board and discoloration to component’s leads. Zone 4 – Cooling Zone The temperature ramp down rate is 6°C/second maximum. It is important to control the cooling rate as fast as possible in order to achieve the smaller grain size for solder and increase fatigue resistance of solder joint. Nominal stencil thickness Component lead pitch 0.102 mm (0.004 in) Lead pitch less than 0.508 mm (0.020 in) 0.152 mm (0.006 in) 0.508 mm to 0.635 mm (0.02 in to 0.025 in) 0.203 mm (0.008 in) Lead pitch greater than 0.635 mm (0.025 in) www.agilent.com/semiconductors For product information and a complete list of distributors, please go to our web site. For technical assistance call: Americas/Canada: +1 (800) 235-0312 or (916) 788-6763 Europe: +49 (0) 6441 92460 China: 10800 650 0017 Hong Kong: (65) 6756 2394 India, Australia, New Zealand: (65) 6755 1939 Japan: (+81 3) 3335-8152(Domestic/International), or 0120-61-1280(Domestic Only) Korea: (65) 6755 1989 Singapore, Malaysia, Vietnam, Thailand, Philippines, Indonesia: (65) 6755 2044 Taiwan: (65) 6755 1843 Data subject to change. Copyright © 2004 Agilent Technologies, Inc. Obsoletes 5989-0404EN November 10, 2004 5989-1900EN Solder Paste The recommended solder paste is type Sn6337A or Sn60Pb40A of J-STD-006. Note: Solder paste storage and shelf life shall be in accordance with manufacturer’s specifications. Stencil or Screen The solder paste may be deposited onto PCB by either screen printing, using a stencil or syringe dispensing. The recommended stencil thickness is in accordance to JESD22-B102-C.