SD101A thru SD101C Small-Signal Diode Schottky Diodes Features For general purpose applications The LL101 series is a metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level applications. These diodes are also available in the MiniMELF case with type designations LL101A thru LL101C. Mechanical Data Case: DO-35 Glass Case Weight: approx. 0.13g Maximum Ratings and Thermal Characteristics (Ratings at 25oC ambient temperature unless otherwise specified.) Parameter Peak inverse voltage S D 101A S D 101B S D 101C Power dissipation (Infinite heatsink) Symbol Value Unit VRRM 60 50 40 Volts Ptot Maximum single cycle surge 10 us square wave IFSM Thermal resistance junction to ambient air RθJA 400 (1) 2.0 0.3 Amps (1) o (1) Junction temperature Tj 125 Storage temperature range TS -55 to +150 Notes: mW (1) C/mW o C o C 1. Valid provided that leads at a distance of 4mm from case are kept at ambient temperature. 688 Electrical Characteristics (TJ=25oC unless otherwise noted.) Parameter Symbol Test Condition Min. Typ. Max. Unit Reverse breakdown voltage S D 101A S D 101B S D 101C V(BR)R IR=10uA 60 50 40 - - Volts Leakage current S D 101A S D 101B S D 101C IR VR=50V VR=40V VR=30V - - 200 200 200 nA IF=1mA - - 0.41 0.4 0.39 Volt IF=15mA - - 1.0 0.95 0.9 Volt Ctot VR=0V, f=1MHz - - 2.0 2.1 2.2 pF trr IF=IR=5mA, recover to 0.1IR - - 1 ns Forward voltage drop Junction capacitance Reverse recovery time S D 101A S D 101B S D 101C S D 101A S D 101B S D 101C S D 101A S D 101B S D 101C VF 689 RATINGS AND CHARACTERISTIC CURVES (TA = 25oC unless otherwise noted) 690