Pb Free Plating Product CORPORATION G2301 P-CHANNEL ENHANCEMENT MODE POWER MOSFET Description ISSUED DATE :2004/10/12 REVISED DATE :2005/03/22B BVDSS RDS(ON) ID -20V 130m -2.6A The G2301 provides the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The G2301 is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Features Super High Dense Cell Design for Extremely Low RDS(ON) Reliable and Rugged Applications Power Management in Notebook Computer Portable Equipment Battery Powered System. Package Dimensions REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0 10 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage 3 Continuous Drain Current 3 Continuous Drain Current Pulsed Drain Current Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Ratings Tj, Tstg -20 12 -2.6 -2.1 -10 1.38 0.01 -55 ~ +150 Symbol Rthj-a Ratings 90 Unit V V A A A W W/ Thermal Data Parameter Thermal Resistance Junction-ambient3 Max. Unit /W 1/4 CORPORATION Electrical Characteristics(Tj = 25 Parameter ISSUED DATE :2004/10/12 REVISED DATE :2005/03/22B Unless otherwise specified) Symbol Min. Typ. Max. Unit BVDSS -20 - - V - -0.1 - VGS(th) -0.5 - - Forward Transconductance gfs - 4.4 Gate-Source Leakage Current IGSS - - - - -1 uA VDS=-20V, VGS=0 - - -10 uA VDS=-16V, VGS=0 - - 130 Drain-Source Breakdown Voltage BVDSS/ Tj Breakdown Voltage Temperature Coefficient Gate Threshold Voltage Drain-Source Leakage Current(Tj=25 ) Drain-Source Leakage Current(Tj=70 ) Static Drain-Source On-Resistance2 IDSS RDS(ON) V/ Test Conditions VGS=0, ID=-250uA Reference to 25 V VDS= VGS, ID=-250uA - S VDS=-5.0V, ID=-2.8A 100 nA VGS= m 12V ID=-2.8A, VGS =-5.0V ID=-2.0A, VGS =-2.8V - - 190 Total Gate Charge2 Qg - 5.2 10 Gate-Source Charge Qgs - 1.36 - Gate-Drain (“Miller”) Change Qgd - 0.6 - VGS=-5.0V ns VDS=-15V ID=-1A VGS=-10V RG=6 RD=15 pF VGS=0V VDS=-6V f=1.0MHz 2 Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time , ID=-1mA Td(on) - 5.2 - Tr - 9.7 - Td(off) - 19 - Tf - 29 - Input Capacitance Ciss - 295 - Output Capacitance Coss - 170 - Reverse Transfer Capacitance Crss - 65 - ID=-2.8A nC VDS=-6.0V Source-Drain Diode Forward On Voltage2 Continuous Source Current(Body Diode) Pulsed Source Current (Body Diode) 1 VSD - - -1.2 V IS=-1.6A, VGS =0 Tj=25 VD= VG=0V, VS =-1.2V IS - - -1 A ISM - - -10 A Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. 3. Surface mounted on 1 in2 copper pad of FR4 board;270 /w when mounted on min. copper pad. Characteristics Curve 2/4 CORPORATION ISSUED DATE :2004/10/12 REVISED DATE :2005/03/22B 3/4 CORPORATION ISSUED DATE :2004/10/12 REVISED DATE :2005/03/22B Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 4/4