Pb Free Plating Product ISSUED DATE :2005/01/04 REVISED DATE : GE04N70B BVDSS RDS(ON) ID N-CHANNEL ENHANCEMENT MODE POWER MOSFET 650/700V 2.4 4A Description The GE04N70B series are specially designed as main switching devices for universal 90~265VAC off-line AC/DC converter applications. TO-220 type provide high blocking voltage to overcome voltage surge and sag in the toughest power system with the best combination of fast switching, ruggedized design and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications. The device is suited for switch mode power supplies, DC-AC converters and high current high speed switching circuits. Features *Simple Drive Requirement *Dynamic dv/dt Rating *Repetitive Avalanche Rated *Fast Switching Package Dimensions REF. A b c D E L4 L5 Millimeter Min. Max. 4.40 4.80 0.76 1.00 0.36 0.50 8.60 9.00 9.80 10.4 14.7 15.3 6.20 6.60 REF. c1 b1 L e L1 Ø A1 Millimeter Min. Max. 1.25 1.45 1.17 1.47 13.25 14.25 2.54 REF. 2.60 2.89 3.71 3.96 2.60 2.80 Absolute Maximum Ratings Parameter Drain-Source Voltage A/H Gate-Source Voltage Symbol Ratings Unit VDS 650/700 V VGS 20 V Continuous Drain Current , VGS@10V ID @TC=25 4 A Continuous Drain Current , VGS@10V ID @TC=100 2.5 A 15 A 62.5 W Pulsed Drain Current 1, IDM PD @TC=25 Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy 0.5 2 W/ EAS 100 mJ Avalanche Current IAR 4 A Repetitive Avalanche Energy EAR 4 mJ Tj, Tstg -55 ~ +150 Symbol Value Operating Junction and Storage Temperature Range Thermal Data Parameter Unit Thermal Resistance Junction-case Max. Rthj-c 2.0 /W Thermal Resistance Junction-ambient Max. Rthj-a 62 /W 1/5 ISSUED DATE :2005/01/04 REVISED DATE : Electrical Characteristics(Tj = 25 Parameter Unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions 650 - - V VGS=0, ID=250uA A 700 - - V VGS=0, ID=250uA H - 0.6 - Drain-Source Breakdown Voltage BVDSS Breakdown Voltage Temperature Coefficient BVDSS / Tj Gate Threshold Voltage VGS(th) 2.0 - 4.0 V VDS=VGS, ID=250uA gfs - 2.5 - S VDS=50V, ID=2A IGSS - - 100 nA VGS= - - 100 uA VDS=600V, VGS=0 - - 500 uA VDS=480V, VGS=0 RDS(ON) - - 2.4 Total Gate Charge Qg - 16.7 - Gate-Source Charge Qgs - 4.1 - Gate-Drain (“Miller”) Change Qgd - 4.9 - Td(on) - 11 - Tr - 8.3 - Td(off) - 23.8 - Tf - 8.2 - Ciss - 950 - Output Capacitance Coss - 65 - Reverse Transfer Capacitance Crss - 6 - Symbol Min. Typ. Max. Unit VSD - - 1.5 V IS=4A, VGS=0V, Tj=25 IS - - 4 A VD= VG=0V, VS=1.5V ISM - - 15 A Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 ) Drain-Source Leakage Current(Tj=150 ) Static Drain-Source On-Resistance 3 3 Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance IDSS V/ Reference to 25 , ID=1mA 20V VGS=10V, ID=2A nC ID=4A VDS=480V VGS=10V ns VDD=300V ID=4A VGS=10V RG=10 RD=75 pF VGS=0V VDS=25V f=1.0MHz Source-Drain Diode Parameter Forward On Voltage3 Continuous Source Current(Body Diode) Pulsed Source Current (Body Diode) 1 Test Conditions Notes: 1. Pulse width limited by safe operating area. 2. Staring Tj=25 , VDD=50V, L=25mH, RG=25 , IAS=4A. 3. Pulse width 300us, duty cycle 2%. 2/5 ISSUED DATE :2005/01/04 REVISED DATE : Characteristics Curve Fig 1. Typical Output Characteristics Fig 3. Normalized BVDSS v.s. Junction Temperature Fig 5. Maximum Drain Current v.s. Case Temperature Temperature Fig 2. Typical Output Characteristics Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 6. Typical Power Dissipation 3/5 ISSUED DATE :2005/01/04 REVISED DATE : Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics Fig 11. Forward Characteristics of Reverse Diode Fig 12. Gate Threshold Voltage v.s. Junction Temperature 4/5 ISSUED DATE :2005/01/04 REVISED DATE : Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 5/5