ISSUED DATE :2004/09/15 REVISED DATE : GS717SD S U R F A C E M O U N T, S C H O T T K Y B A R R I E R D I O D E V O LT A G E 4 0 V, C U R R E N T 0 . 0 3 A Description The GS717SD is designed for general purpose detection and high speed switching. Package Dimensions REF. A A1 A2 D E HE Parameter Millimeter Min. Max. 0.80 1.10 0 0.10 0.80 1.00 1.80 2.20 1.15 1.35 1.80 2.40 REF. L1 L b c e Q1 Millimeter Min. Max. 0.42 REF. 0.15 0.35 0.25 0.40 0.10 0.25 0.65 REF. 0.15 BSC. Symbol Ratings Tj +125 Storage Temperature Tstg -40 ~ +125 Maximum Peak Repetitive Reverse Voltage VRRM 40 V Maximum RMS Voltage VRMS 28 V Maximum DC Blocking Voltage VDC 40 V Peak Forward Surge Current at 8.3mSec single half sine-wave IFSM 0.2 A Typical Junction Capacitance between Terminal (Note 1) CJ 2.0 pF Maximum Average Forward Rectified Current Io 0.03 A Total Power Dissipation PD 225 mW Junction Temperature Characteristics Unit at Ta = 25 Characteristics Symbol Typ. Unit Test Condition Maximum Instantaneous Forward Voltage VF 0.37 V IF = 1mA Maximum Average Reverse Current IR 1.0 uA VR = 10V Notes: 1. Measured at 1.0 MHz and applied reverse voltage of 1.0 volt. 2. ESD sensitive product handling required. 1/2 ISSUED DATE :2004/09/15 REVISED DATE : Characteristics Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 2/2