GTM GSC93BC46-66

ISSUED DATE :2006/06/14
REVISED DATE :
GSC93BC46/56/66
3-wire Serial EEPROMs 1K/2K/4K
Description
The GSC93BC family provides 1K, 2K and 4K of serial electrically erasable and programmable read-only
memory (EEPROM). The wide Vdd range allows for low-voltage operation down to 1.8V and up to 5.5V. The
device, fabricated using traditional CMOS EEPROM technology, is optimized for many industrial and
commercial applications where low-voltage and low-power operation is essential. The device is accessed via a
3-wire serial interface.
Features
Internally organized as 128x8 or 64x16 (1K),
256x8 or 128x16 (2K), 512x8 or 256x16 (4K)
Wide-voltage range operation: 1.8V~5.5V
3-wire serial interface bus
Date retention: 100years
High endurance: 1,000,000 Write Cycles
2MHz (5V) clock rate
Sequential read operation
Self-timed write cycle (10ms max)
Package Dimensions
REF.
A
B
C
D
E
F
Figure 1. Pin Configurations
Absolute Maximum Ratings
Parameter
Voltage on Any Pin with Respect to Ground
Maximum Operating Voltage
DC Output Current
Operating Temperature Range
Storage Temperature Range
Millimeter
Min.
Max.
5.80
4.80
3.80
0°
0.40
0.19
Pin Name
CS
SK
DI
DO
Gnd
Vcc
ORG
NC
6.20
5.00
4.00
8°
0.90
0.25
REF.
M
H
L
J
K
G
Millimeter
Min.
Max.
0.10
0.25
0.35
0.49
1.35
1.75
0.375 REF.
45°
1.27 TYP.
Function
Chip Select
Serial Data Clock
Serial Data Input
Serial Data Output
Ground
Power Supply
Internal Organization
No Connect
Ratings
-1.0 to Vcc +7.0
6.25
5.0
-55 ~ +125
-65 ~ +150
Unit
V
V
mA
Note: Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of
these specifications are not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
GSC93BC46/56/66
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ISSUED DATE :2006/06/14
REVISED DATE :
Figure 2. Block Diagram
Notes
1. The ORG pin is used to select between x8
and x16.
When the pin is connected to Vcc, x16 mode
is selected.
Otherwise, the ORG pin should be grounded
in order to select x8 mode.
The interface foe the GSC93BC46/56/66 is accessed through four different signals:
Chip Select (CS), Data Input (DI), Data Output (DO), and Serial Data Clock (SK). The Chip Select (CS) signal
must be pulled high before issuing a command through the Data Input (DI) pin. The Serial Data Clock (SK)
signal is used in conjunction with the Data Input (DI) pin.
PIN Capacitance
Applicable over recommended operating range from TA=25 , f=1.0MHz, Vcc=+5V
Symbol
Test Condition
Max
Unit
COUT
Output Capacitance (DO)
5
pF
CIN
Input Capacitance (CK, SK, DI)
5
pF
Condition
VOUT=0V
VIN=0V
Note: 1. This parameter is characterized and not 100% tested.
DC Characteristics
Applicable over recommended operating range from: TA=-40 ~ +85 , Vcc=+1.8 ~ +5V (unless otherwise noted)
Parameter
Symbol
Test Condition
Min
TYP
Max
Unit
Supply Voltage
VCC1
1.8
5.5
V
Supply Voltage
VCC2
2.7
5.5
V
Supply Voltage
VCC3
4.5
5.5
V
Supply Current VCC=5.0V
ICC
READ at 1MHz
0.5
2.0
mA
Supply Current VCC=5.0V
ICC
WRITE at 1MHz
0.5
2.0
mA
Standby Current VCC=1.8V
ISB1
CS=0V
0
0.1
A
Standby Current VCC=2.7V
ISB2
CS=0V
6.0
10.0
A
Standby Current VCC=5.0V
ISB3
CS=0V
17
30
A
Input Leakage Current
ILI
VIN=0V to VCC
0.1
3.0
A
Output Leakage Current
ILO
VIN=0V to VCC
0.1
3.0
A
-0.6
0.8
Input Low Level
VIL1(1)
2.7V< VCC <5.5V
V
(1)
2.0
VCC+1
Input High Level
VIH1
(1)
-0.6
VCCx0.3
Input Low Level
VIL2
1.8V< VCC <2.7V
V
VCCx0.7
Input High Level
VIH2(1)
VCC+1
0.4
Output Low Level
VOL1(1) 2.7V< VCC <5.5V; IOL=2.1mA
V
(1)
Output High Level
2.4
VOH1
IOH=-0.4mA
(1)
0.2
Output Low Level
VOL2
1.8V< VCC <2.7V; IOL=0.15mA
V
(1)
Output High Level
VOH2
IOH=-100uA VCC-2
Note 1: V IL and V IH max are reference only and are not tested.
GSC93BC46/56/66
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ISSUED DATE :2006/06/14
REVISED DATE :
AC Characteristics
Applicable over recommended operating range from: TA=-40 ~ +85 , Vcc=As specified, CL=1 TTL Gate &
100pF (unless otherwise noted)
Parameter
Symbol
Test Condition
Min
TYP
Max
Unit
Clock Frequency, SK
f SK
4.5V< VCC <5.5V
2.7V< VCC <5.5V
1.8V< VCC <5.5V
0
0
0
-
2
1
0.25
MHz
SK High Time
tSKH
4.5V< VCC <5.5V
2.7V< VCC <5.5V
1.8V< VCC <5.5V
250
250
1000
-
-
ns
SK Low Time
tSKL
4.5V< VCC <5.5V
2.7V< VCC <5.5V
1.8V< VCC <5.5V
250
250
1000
-
-
ns
Minimum CS Low Time
tCS
4.5V< VCC <5.5V
2.7V< VCC <5.5V
1.8V< VCC <5.5V
250
250
1000
-
-
ns
CS Setup Time
tCSS
Relative
To SK
4.5V< VCC <5.5V
2.7V< VCC <5.5V
1.8V< VCC <5.5V
50
50
200
-
-
ns
DI Setup Time
tDIS
Relative
To SK
4.5V< VCC <5.5V
2.7V< VCC <5.5V
1.8V< VCC <5.5V
100
100
400
-
-
ns
CS Hold Time
tCSH
Relative
To SK
0
-
-
ns
DI Hold Time
tDIH
Relative
To SK
4.5V< VCC <5.5V
2.7V< VCC <5.5V
1.8V< VCC <5.5V
100
100
400
-
-
ns
Output Delay to “1”
tPD1
AC Test
4.5V< VCC <5.5V
2.7V< VCC <5.5V
1.8V< VCC <5.5V
-
-
250
250
1000
ns
Output Delay to “0”
tPD0
AC Test
4.5V< VCC <5.5V
2.7V< VCC <5.5V
1.8V< VCC <5.5V
-
-
250
250
1000
ns
CS to Status Valid
tSV
AC Test
4.5V< VCC <5.5V
2.7V< VCC <5.5V
1.8V< VCC <5.5V
-
-
250
250
1000
ns
CS to DO in High Impedance
tDF
AC Test
CS=VIL
4.5V< VCC <5.5V
2.7V< VCC <5.5V
1.8V< VCC <5.5V
-
-
100
100
400
ns
Write Cycle Time
tWP
1.8V< VCC <5.5V
-
3
10
ms
1M
-
-
Write
Cycles
5.0V, 25
Endurance
(1)
Note: 1. This parameter is characterized and not 100% tested.
GSC93BC46/56/66
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ISSUED DATE :2006/06/14
REVISED DATE :
Instruction set for the GSC93BC46
Instruction SB
Address
OP
Code X8
X16
READ
1
10
A6 ~ A0
A5 ~ A0
EWEN
1
00
11xxxxx
11xxxx
ERASE
WRITE
1
1
11
01
A6 ~ A0
A6 ~ A0
A5 ~ A0
A5 ~ A0
ERAL
1
00
10xxxxx
10xxxx
WRAL
1
00
01xxxxx
01xxxx
EWDS
1
00
00xxxxx
00xxxx
Data
X8
X16
D7 ~ D0
D15 ~ D0
D7 ~ D0
D15 ~ D0
Comment
Reads data stored at specified
memory location.
Write enable command (must be
issued before any erase or write
operation).
Erases memory location An~A0
Write to memory location An~A0
Erases all memory locations.
Valid only at VCC=4.5V to 5.5V
Write all memory locations.
Valid only at VCC=4.5V to 5.5V
Disables all erase or write
instructions
Note : The X’s in the address field represent don’t care values and must be clocked.
Instruction set for the GSC93BC56/66
Instruction SB
Address
OP
Code X8
X16
READ
1
10
A8 ~ A0
A7 ~ A0
EWEN
1
00
11xxxxxxx 11xxxxxx
ERASE
WRITE
1
1
11
01
A8 ~ A0
A8 ~ A0
ERAL
1
00
10xxxxxxx 10xxxxxx
WRAL
1
00
01xxxxxxx 01xxxxxx
EWDS
1
00
00xxxxxxx 00xxxxxx
A7 ~ A0
A7 ~ A0
Data
X8
X16
D7~D0
D15~D0
D7~D0
D15~D0
Comment
Reads data stored at specified
memory location.
Write enable command (must be
issued before any erase or write
operation).
Erases memory location An~A0
Write to memory location An~A0
Erases all memory locations.
Valid only at VCC=4.5V to 5.5V
Write all memory locations.
Valid only at VCC=4.5V to 5.5V
Disables all erase or write
instructions
Note : The X’s in the address field represent don’t care values and must be clocked.
Function Description
The GSC93BC46/56/66 support 7 different instructions, which must be clocked serially using the CS, SK and
DI pins. Before sending each of these instructions, the CS pin must be pulled high followed by a START bit
(logic ‘1’). The next sequence includes a 2-bit Op Code and usually an 8 or 16-bit address. The next
description describes the various functions in the chip.
READ (READ): The Read (READ) instruction includes the Op Code (“10”) followed by the memory address
location to be read. After the instruction and address is sent, the data from the memory location can be clocked
out using the serial output pin DO. The data changes on the rising edge of the clock, so the falling edge can be
used to strobe the output.
Note that during shifting the last address bit, the DO pin is a dummy bit (logic “0”).
ERASE/WRITE (EWEN)): When the chip is first powered-on, no erase or write instructions can be issued.
Only when the Erase/Write Enable (EWEN) instruction is sent will the system be allowed to write to the chip.
The EWEN command only needs to be issued once after being powered-on. To disable the chip again, the
Erase/Write Disable (EWDS) command can be used.
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ISSUED DATE :2006/06/14
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ERASE (ERASE): The Erase (ERASE) instruction clears the designated memory location to a logic ‘1’ state.
After the Op Code and address location is inputted, the chip will enter into an erase cycle. When the cycle
completes, the chip will automatically enter into standby mode.
WRITE (WRITE): The Write (WRITE) instruction is used to write to a specific memory location. If word mode
(x16) is selected, then 16 bits of data will be written into the location. If byte mode (x8) is chosen, then 8 bits of
data will be written into the location. The write cycle will begin automatically after the 8 or 16 bits are shifted
into the chip.
ERASE ALL (ERAL): The Erase All (ERAL) instruction is primarily used for testing purposes and only
functions when VCC=4.5V to 5.5V. This instruction will clear the entire memory array to ‘1’.
WRITE ALL (WRAL): The Write All (WRAL) instruction will program the entire memory array according to the 8
or 16-bit data pattern provided. The instruction will only be valid when VCC=4.5V to 5.5V.
ERASE/WRITE DISABLE (EWDS): The Erase/Write Disable (EWDS) instruction blocks any kind of erase or
program operations from modifying the contents of the memory array. This instruction should be executed after
erasing or programming to prevent accidental data loss.
Note also that the READ instruction will operate regardless of whether the chip is disabled from program and
write operations.
Ready/Busy
To determine whether the chip has completed an erase or write operation, the CS signal can be pulled LOW
for a minimum of 250ns (tCS) and then pulled back HIGH to enter Ready/Busy mode. If the chip is currently in
the programming cycle, tWP, then the DO pin will go low (logical “0”). When the write cycle completes, the DO
pin is pulled high (logical “1”) to indicate that the part can receive anther instruction. Note that the Ready/Busy
polling cannot be done if the chip has already finished and returned back to standby mode.
Timing Diagrams
Synchronous Data Timing
Note (1): This is the minimum SK period.
Organization Key for TIMING Diagrams
I/O
AN
DN
X8
A6
D7
GSC93BC46(1K)
X16
A5
D15
GSC93BC56(2K)
X8
X16
(1)
A8
A7(2)
D7
D15
X8
A8
D7
GSC93BC66(4K)
X16
A7
D15
Note:
1. A8 is a DON’T CARE value, but the extra clock is required.
2. A7 is a DON’T CARE value, but the extra clock is required.
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REVISED DATE :
READ Timing
EWEN Timing
EWDS Timing
WRITE Timing
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ISSUED DATE :2006/06/14
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WRAL Timing (1)
(1) Valid only at VCC=4.5V to 5.5V
ERASE Timing
ERAL Timing (1)
(1) Valid only at VCC=4.5V to 5.5V
GSC93BC46/56/66
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ISSUED DATE :2006/06/14
REVISED DATE :
GSC93BC46 Ordering Information
Ordering Code
GSC93BC46AI
GSC93BC46BI
Package
SOP-8
Pin Type
A
B
Operating Ranges
Pin Type
A
B
Operating Ranges
Pin Type
A
B
Operating Ranges
Industrial (-40 ~ +85 )
GSC93BC56 Ordering Information
Ordering Code
GSC93BC56AI
GSC93BC56BI
Package
SOP-8
GSC93BC66 Ordering Information
Ordering Code
GSC93BC66AI
GSC93BC66BI
Package
SOP-8
Industrial (-40 ~ +85 )
Industrial (-40 ~ +85 )
Product Ordering Information
GSC93BCXXYZ
G=GTM
SC=SOP-8
93=Device Type
Supply Voltage
BC=1.8V to 5.5V
Device Function
46=1 Kbit (128x8 or 64x16)
56=2 Kbit (256x8 or 128x16)
66=4 Kbit (512x8 or 256x16)
Pin Type
A=A-Type
B=B-Type
Temperature
I=Industrial (-40 ~ +85
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
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