GTM GSN217U

ISSUED DATE :2004/09/24
REVISED DATE :
GSN217U
S U R F A C E M O U N T, S W I T C H I N G D I O D E
V O LT A G E 8 0 V, C U R R E N T 0 . 1 A
Description
The GSN217U is designed for ultra high speed switching.
Package Dimensions
REF.
A
A1
A2
D
E
HE
Parameter
Millimeter
Min.
Max.
0.80
1.10
0
0.10
0.80
1.00
1.80
2.20
1.15
1.35
1.80
2.40
REF.
L1
L
b
c
e
Q1
Millimeter
Min.
Max.
0.42 REF.
0.15
0.35
0.25
0.40
0.10
0.25
0.65 REF.
0.15 BSC.
Symbol
Ratings
Tj
+150
Storage Temperature
Tstg
-55 ~ +150
Maximum Peak Repetitive Reverse Voltage
VRRM
80
V
Maximum RMS Voltage
VRMS
56
V
Maximum DC Blocking Voltage
VDC
80
V
Peak Forward Surge Current at 1uSec
IFSM
4.0
A
Typical Junction Capacitance between Terminal (Note 1)
CJ
2.0
pF
Junction Temperature
Unit
Maximum Average Forward Rectified Current
Io
0.1
A
Total Power Dissipation
PD
225
mW
Characteristics
at Ta = 25
Characteristics
Symbol
Typ.
Unit
Test Condition
Maximum Instantaneous Forward Voltage
VF
Maximum Average Reverse Current
IR
1.20
V
IF = 100mA
0.2
uA
VR = 70V
Notes: 1. Measured at 1.0 MHz and applied reverse voltage of 6.0 volt.
2. ESD sensitive product handling required.
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ISSUED DATE :2004/09/24
REVISED DATE :
Characteristics Curve
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
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