INFRARED DETECTOR InAs photovoltaic detector P10090 series Low noise, high reliability infrared detectors (for 3 µm band) InAs photovoltaic detectors have high sensitivity in the infrared region around 3 µm as with PbS photoconductive detectors, and also feature low noise and high reliability. P10090 series is a new family of InAs photovoltaic detectors that deliver even higher sensitivity than our convensional products (P8079 series). Features Applications l Low noise l High reliability l High detectivity (D*) l Available in multi-element arrays (custom product) l Gas analysis l Laser detection l Infrared spectrophotometry l Radiation thermometer Accessories (Optional) l Heatsink for one-stage TE-cooled type l Heatsink for two-stage TE-cooled type l Temperature controller l Infrared detector module with preamp l Amplifiers for InAs photovoltaic detector A3179 A3179-01 C1103-04 P4631-01 (custom-made product) ■ Specifications/Absolute maximum ratings Type No. P10090-01 Dimensional outline/ Windo w material * Package Cooling ➀/S TO-5 ➁/S TO-8 Non-cooled One-stage TE-cooled Two-stage TE-cooled Active area (mm) P10090-11 P10090-21 φ1 Thermistor power dissipation (mW) 0.2 Absolute maximum ratings Operating Reverse temperature voltage Topr VR (V) (°C) 0.5 -40 to +60 Storage temperature Tstg (°C) -40 to +80 * Window material S: sapphire glass ■ Electrical and optical characteristics (Typ. unless otherwise noted) Type No. P10090-01 P10090-11 P10090-21 Measure ment Peak Photo condition C ut-off sensitivity sensitivity Shunt resistance w a velength Ele m e nt wavelength S Rsh te m p erature λc λp λ=λp T Min. Typ. (°C) (µm) (µm) (A/W) (Ω) (Ω) 25 3.35 3.65 1.0 40 70 -10 3.30 3.55 250 400 1.2 -30 3.25 3.45 1000 1300 D∗ (λp, 600, 1) NEP λ=λp Rise time tr VR=0 V RL=50 Ω 0 to 63 % Min. Typ. (cm· Hz 1/2 /W) (cm· Hz 1/2 /W) 3.0 × 109 4.5 × 109 1.0 × 1010 1.6 × 1010 2.0 × 1010 3.2 × 1010 (W/Hz1/2) 1.5 × 10-11 5.3 × 10-12 2.8 × 10-12 (µs) 0.70 0.45 0.30 1 P10090 series InAs photovoltaic detector ■ Spectral response (D*) 10 ■ Spectral response (Typ.) 11 (Typ.) 1.4 P10090-21 (T= -30 ˚C) D* (cm · Hz1/2/W) 10 PHOTO SENSITIVITY (A/W) 1.2 10 P10090-11 (T= -10 ˚C) 109 P10090-01 (T=25 ˚C) 10 8 1.0 0.8 T= -10 ˚C 0.6 T= -30 ˚C 0.4 0.2 107 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 1.0 4.5 T=25 ˚C 1.5 WAVELENGTH (µm) 2.0 2.5 3.0 3.5 4.0 WAVELENGTH (µm) KIRDB0356EB ■ Dark current vs. reverse voltage KIRDB0381EA ■ Shunt resistance vs. element temperature (Typ.) 1 mA (Typ.) 100 kΩ T=25 ˚C SHUNT RESISTANCE DARK CURRENT 10 kΩ 100 µA T= -10 ˚C T= -30 ˚C 10 µA 1 kΩ 100 Ω 10 Ω 1 µA 0.01 0.1 1Ω -100 1 -80 -60 -40 -20 0 20 40 60 ELEMENT TEMPERATURE (˚C) REVERSE VOLTAGE (V) KIRDB0382EA ■ Linearity KIRDB0383EA ■ Sensitivity uniformity (Typ. Ta=25 ˚C, λ=1.3 µm) 1000 (Typ. λ=1.55 µm) 110 T= -10 ˚C RELATIVE SENSITIVITY (%) OPTICAL OUTPUT POWER (µA) 100 100 10 90 T=10 ˚C 80 T=25 ˚C 70 60 50 40 30 1 1 10 100 1000 10000 -400 -200 0 200 400 600 POSITION ON ACTIVE AREA (µm) INCIDENT LIGHT LEVEL (µW) KIRDB0384EA 2 20 -600 KIRDB0385EA InAs photovoltaic detector ■ Current vs. voltage of TE-cooled type 1.6 ■ Cooling characteristics of TE-cooled type (Typ. Ta=25 ˚C, Thermal resistance of heatsink=3 ˚C/W) CURRENT (A) ONE-STAGE TE-COOLED 1.0 0.8 TWO-STAGE TE-COOLED 0.6 0.4 (Typ. Ta=25 ˚C, thermal resistance of heat-sink=3 ˚C/W) 30 ELEMENT TEMPERATURE (˚C) 1.4 1.2 20 10 ONE-STAGE TE-COOLED TYPE 0 -10 -20 -30 TWO-STAGE TE-COOLED TYPE -40 0.2 -50 0 0 0.2 0.4 0.6 0.8 P10090 series 1.0 1.2 0 0.4 0.8 1.2 1.6 TE-COOLED CURRENT (A) VOLTAGE (V) KIRDB0115EB KIRDB0181EA ■ Thermistor temperature characteristic (Typ.) RESISTANCE (Ω) 106 105 104 103 -40 -20 0 20 ELEMENT TEMPERATURE (˚C) KIRDB0116EA ■ Measurement circuit CHOPPER 600 Hz DETECTOR BAND-PASS FILTER BLACK BODY r.m.s. METER fo=600 Hz ∆f=60 Hz INCIDENT ENERGY: 245 µW/cm2 KIRDC0075EA 3 InAs photovoltaic detector P10090 series ■ Dimensional outlines (unit: mm) ➀ P10090-01 ➁ P10090-11/-21 9.1 ± 0.3 15.3 ± 0.2 8.1 ± 0.1 WINDOW 5.5 ± 0.1 10 ± 0.2 4.3 ± 0.2 2.3 ± 0.2 PHOTOSENSITIVE SURFACE 12 MIN. 0.45 LEAD 18 MIN. 0.4 MAX. a PHOTOSENSITIVE SURFACE 14 ± 0.2 WINDOW 10 ± 0.2 0.45 LEAD 5.1 ± 0.2 10.2 ± 0.2 1.0 MAX. 5.1 ± 0.2 DETECTOR (ANODE) DETECTOR (CATHODE) TE-COOLER (-) TE-COOLER (+) THERMISTOR CASE P10090-11 P10090-21 5.1 ± 0.2 a 4.5 ± 0.2 KIRDA0119EA 6.9 ± 0.2 KIRDA0191EA Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2007 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Cat. No. KIRD1099E03 Mar. 2007 DN 4