PHOTOMULTIPLIER TUBE R3896 High QE Multialkali Photocathode New Electro–Optical Design 28 mm (1-1/8 Inch) Diameter, 9-Stage, Side-On Type FEATURES ●High Sensitivity Luminous ................................................ 525 µA/lm (Typ.) Radiant at 450nm (peak wavelength) ............. 90 mA/W (Typ.) at 633nm ............................................. 73 mA/W (Typ.) Quantum Efficiency at 260nm (peak wavelength) .................... 30 % (Typ.) at 633nm .................................................... 14 % (Typ.) ●Wide Spectral Response ......................... 185 nm to 900 nm ●High Signal to Noise Ratio ●Newly Designed Electro Optical Structure APPLICATIONS Figure 1: Electro Optical Structure LIGHT PHOTOELECTRON TRAJECTORIES GLASS BULB GRID ANODE PHOTOCATHODE Figure 2: Typical Spectral Response 100 CATHODE RADIANT SENSITIVITY (mA/W) QUANTUM EFFICIENCY (%) ●Biomedical Analysis Blood Analyzer, Flow Cytometer, DNA Sequencer ●Environmental Monitoring NOx Analyzer ●Spectroscopy Fluorescence Spectrometer, Raman Spectrometer, UV–VIS Spectrometer ●Semiconductor Industry Wafer Inspection, Particle Counter TPMSB0049EB CATHODE RADIANT SENSITIVITY R3896 10 R928 QUANTUM EFFICIENCY 1 0.1 0.01 100 200 300 400 500 600 700 800 900 1000 9th DYNODE 1st DYNODE WAVELENGTH (nm) 2nd DYNODE TPMSC0024EA Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office. Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2006 Hamamatsu Photonics K.K. PHOTOMULTIPLIER TUBE R3896 SPECIFICATIONS GENERAL Parameter Description/Value 185 to 900 Spectral Response 450 Wavelength of Maximum Response MateriaI Multialkali Photocathode 8 × 24 Minimum Effective Area UV glass Window Material Structure Circular-cage Dynode 9 Number of Stages 4 Anode to Last Dynode Direct Interelectrode Anode to All Other 6 Capacitances Electrodes Base 11-pin base JEDEC No. B11-88 Weight Approx. 45 Operating Ambient Temperature -30 to +50 Storage Temperature -30 to +50 SuitabIe Socket E678–11A (Sold Separately) SuitabIe Socket Assembly E717–63 (Sold Separately) Unit nm nm — mm — — — pF pF — g °C °C — — NOTES A: Averaged over any interval of 30 seconds maximum. B: The light source is a tungsten filament lamp operated at a distribution temperature of 2856K. Supply voltage is 100 V between the cathode and all other electrodes connected together as anode. C: Red/White ratio is the quotient of the cathode current measured using a red filter (Toshiba R-68) interposed between the light source and the tube by the cathode current measured with the filter removed under the same conditions as Note B. D: The value is cathode output current when a blue filter (Corning CS 5-58 polished to 1/2 stock thickness) is interposed between the light source and the tube under the same condition as Note B. E: Measured with the same light source as Note B and with the voltage distribution ratio shown in Table 1 below. Table 1:Voltage Distribution Ratio Electrodes Ratio K Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9 1 1 1 1 1 1 1 1 1 P 1 SuppIy Voltage: 1000 V, K: Cathode, Dy: Dynode, P: Anode Parameter Supply Between Anode and Cathode Voltage Between Anode and Last Dynode Average Anode Current A Unit V V mA Value 1250 250 0.1 CHARACTERISTlCS (at 25 °C) Parameter at 254 nm Quantum at 450 nm Efficiency at 633 nm at 852 nm Luminous B Cathode at 254 nm Sensitivity at 450 nm Radiant at 633 nm at 852 nm Red/White Ratio C Blue Sensitivity Index D Anode Luminous E Sensitivity Gain E Anode Dark Current F (After 30 min Storage in Darkness) Anode Pulse Rise Time G Time Electron Transit Time H Response Transit Time Spread (TTS) I Anode Current Light Hysteresis Voltage Hysteresis Stability J Min. — — — — 475 — — — — — — Typ. 29.3 24.8 14.3 0.73 525 60 90 73 5.0 0.4 15 Max. — — — — — — — — — — — Unit % % % % µA/lm mA/W mA/W mA/W mA/W — — 3000 5000 — A/lm — 9.5 × 106 — — — 10 50 nA — — — — — 2.2 22 1.2 0.1 1.0 — — — — — ns ns ns % % F: Measured with the same supply voltage and voltage distribution ratio as Note E after removal of light. G: The rise time is the time for the output pulse to rise from 10 % to 90 % of the peak amplitude when the entire photocathode is illuminated by a delta function light pulse. H: The electron transit time is the interval between the arrival of delta function light pulse at the entrance window of the tube and the time when the anode output reaches the peak amplitube. In measurement, the whole photocathode is illuminated. I: Also called transit time jitter. This is the fluctuation in electron transit time between individual pulses in the signal photoelectron mode, and may be defined as the FWHM of the frequency distribution of electron transit times J: Hysteresis is temporary instability in anode current after light and voltage are applied. lmax. Hysteresis = lmin. × 100 (%) li ANODE CURRENT MAXIMUM RATINGS (Absolute Maximum Values) l max. li l min. TIME 0 5 6 7 (minutes) TPMSB0002EA (1)Light Hysteresis The tube is operated at 750 V with an anode current of 1 µA for 5 minutes. The light is then removed from the tube for a minute. The tube is then re-illuminated by the previous light level for a minute to measure the variation. (2)Voltage Hysteresis The tube is operated at 300 V with an anode current of 0.1 µA for 5 minutes. The light is then removed from the tube and the supply voltage is quickly increased to 800 V. After a minute, the supply voltage is then reduced to the previous value and the tube is re-illuminated for a minute to measure the variation. Figure 3: Typical Temperature Characteristics of Dark Current (at 1000 V, after 30 min storage in darkness) 100 Figure 4: Anode Luminous Sensitivity and Gain Characteristics TPMSB0050EB 105 TPMSB0051EB 108 10 1 0.1 0.01 -30 -20 -10 0 +10 +20 +30 +40 107 103 TYPICAL ANODE SENSITIVITY 105 102 MINIMUM ANODE SENSITIVITY 101 104 100 103 10-1 500 +50 700 Figure 5: Typical Time Response Figure 6: Typical Temperature Coefficient of Anode Sensitivity TPMSB0052EB +0.04 TEMPERATURE COEFFICIENT (°C-1) 100 TRANSIT TIME TIME (ns) 102 1500 1000 SUPPLY VOLTAGE (V) TEMPERATURE (°C) 10 RISE TIME 1 500 106 TPMSB0053EB +0.03 +0.02 +0.01 0 -0.0013 -0.0025 -0.01 -0.02 700 1000 SUPPLY VOLTAGE (V) 1500 200 400 600 WAVELENGTH (nm) 800 1000 GAIN ANODE LUMINOUS SENSITIVITY (A/lm) ANODE DARK CURRENT (nA) TYPICAL GAIN 104 PHOTOMULTIPLIER TUBE R3896 Figure 7: Dimensional Outline and Basing Diagram (Unit: mm) 28.5 ± 1.5 8 MIN. PHOTOCATHODE DY5 5 DY6 6 7 80 MAX. DY7 8 DY8 DY3 3 94 MAX. 49.0 ± 2.5 24 MIN. DY4 4 DY2 9 DY9 2 1 DY1 PHOTO CATHODE 10 P 11 K DIRECTION OF LIGHT 3.25 Bottom View (Basing Diagram) 2.5 6.0 3.5 32.2 ± 0.5 Cross Section 11 PIN BASE JEDEC No. B11-88 TPMSA0008EA Figure 8: Accessories (Unit: mm) TPMSA0009EB Sold Separately Socket E678-11A D Type Socket Assembly E717-63 49 5 3.5 PMT SOCKET PIN No. 10 P 3.5 33 33.0 ± 0.3 38 38.0 ± 0.3 5 49.0 ± 0.3 9 DY8 8 DY7 7 DY6 6 DY5 5 DY4 4 DY3 3 DY2 2 DY1 K 1 R9 C2 R8 C1 4 R1 to R10 : 330 kΩ C1 to C3 : 10 nF R5 0.7 30.0 +0 -1 450 ± 10 C3 R6 4 18 TACCA0064EA R10 R7 29.0 ± 0.3 29 DY9 SIGNAL GND SIGNAL OUTPUT RG-174/U(BLACK) POWER SUPPLY GND AWG22 (BLACK) 31.0 ± 0.5 R4 HOUSING (INSULATOR) POTTING COMPOUND R3 R2 R1 11 -HV AWG22 (VIOLET) * Hamamatsu also provides C4900 series compact high voltage power supplies and C6270 series DP type socket assemblies which incorporate a DC to DC converter type high voltage power supply. TACCA0002EH Warning–Personal Safety Hazards Electrical Shock–Operating voltages applied to this device present a shock hazard. WEB SITE www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Electron Tube Division 314-5, Shimokanzo, Iwata City, Shizuoka Pref., 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P. O. Box 6910, Bridgewater. N.J. 08807-0910, U.S.A., Telephone: (1)908-231-0960, Fax: (1)908-231-1218 E-mail: [email protected] Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658 E-mail: [email protected] France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10 E-mail: [email protected] United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road Welwyn Garden City Hertfordshire AL7 1BW, United Kingdom, Telephone: 44-(0)1707-294888, Fax: 44(0)1707-325777 E-mail: [email protected] North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171-41 SOLNA, Sweden, Telephone: (46)8-509-031-00, Fax: (46)8-509-031-01 E-mail: [email protected] Italy: Hamamatsu Photonics Italia: S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)02-935 81 733, Fax: (39)02-935 81 741 E-mail: [email protected] TPMS1013E04 JUL. 2006. IP