COMPACT HYBRID PHOTO-DETECTOR with Si-Avalanche Diode Target PRELIMINARY DATA SEPT. 2000 FEATURES R7110U-07 APPLICATIONS ● Low excess noise ● High gain ● Operable in high magnetic fields ● Low hysteresis ● High energy physics ● Medical ● Other high precision measurements GENERAL Parameter Spectral Response Wavelength of Maximum Response Material Photocathode Minimum Effective Area a Window Material Target Suitable Socket Description/Value 160 to 850 420 Multialkali 8 Synthetic Silica 3 mm Single-element Electron Bombarded Si-Avalanche Diode E678-12M (Supplied) Unit nm nm — mm dia. — Value -8500 155 b -40 to +50 Unit Vdc V °C — — MAXIMUM RATINGS (Absolute Maximum Values) Parameter Supply Voltage Avalanche Diode Reverse Bias Voltage Ambient Temperature CHARACTERISTICS (at 25 °C) Cathode Sensitivity Parameter Luminous (2856K) Radiant at 420 nm Gain c Time Response c Diode (Target) Rise Time Fall Time Width Leakage Current d Capacitance d Min. 100 — — — — — — — Typ. 130 51 4 × 104 1.3 15 5 — 120 Max. — — — — — — 50 — Unit µA/lm mA/W — ns ns ns nA pF NOTE: aWithout magnetic fields bat 25 °C cPhotocathode Voltage: - 8 kV, Avalanche Diode Reverse Bias Voltage: approx.145 V dAvalanche Diode Reverse Bias Voltage: approx.145 V Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office. Information furnished by HAMAMATS U is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. © 2000 Hamamatsu Photonics K.K. COMPACT HYBRID PHOTO-DETECTOR with Si-Avalanche Diode Target R7110U-07 Figure 1: Typical Gain 105 Figure 2: Typical Photoelectron Spectrum TPMHB0408EA TPMHB0409EA 3000 SINGLE P.E. COUNTS PER CHANNEL GAIN SUPPLY VOLTAGE: -8 kV 104 10 3 SUPPLY VOLTAGE: -8 kV APD BIAS VOLTAGE: 150 V PRE-AMP: ORTEC 142A 2000 1000 0 0 50 100 150 0 500 1000 ADC CHANNEL NUMBER APD BIAS VOLTAGE (V) Figure 3: Connection Example for Pulse Height Analysis Figure 4: Dimensional Outline (Unit: mm) 20.0 ± 0.1 8 MIN. INPUT WINDOW 18.0 ± 0.5 CATHODE 2 -HV ANODE DIODE PHOTOCATHODE IC CATHODE BIAS (MAX. 155 V) SIGNAL 2.54 ± 0.2 ANODE CHARGE AMP (EX. ORTEC 142A) IC IC TPMHC0145EC 10.16 ± 0.2 IC: Internal Connect (should not be used) TPMHA0397EC HOMEPAGE URL http://www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Electron Tube Center 314-5, Shimokanzo, Toyooka-village, Iwata-gun, Shizuoka-ken, 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P. O. Box 6910, Bridgewater. N.J. 08807-0910, U.S.A., Telephone: (1)908-231-0960, Fax: (1)908-231-1218 E-mail: [email protected] Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658 E-mail: [email protected] France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10 E-mail: [email protected] United Kingdom: Hamamatsu Photonics UK Limited: Lough Point, 2 Gladbeck Way, Windmill Hill, Enfield, Middlesex EN2 7JA, United Kingdom, Telephone: 44(20)8-367-3560, Fax: 44(20)8-367-6384 E-mail: [email protected] North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171-41 SOLNA, Sweden, Telephone: (46)8-509-031-00, Fax: (46)8-509-031-01 E-mail: [email protected] Italy: Hamamatsu Photonics Italia: S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)02-935 81 733, Fax: (39)02-935 81 741 E-mail: [email protected] TPMH1174E04 SEPT. 2000 IP Printed in Japan (1000)