PHOTOMULTIPLIER TUBES R7518 R7518P (For Photon Counting) High Sensitivity with Low Noise Photocathode FEATURES ●Spectral Response .................................. 185 nm to 730 nm ●High Cathode Sensitivity Luminous ......................................................... 130 µA/lm Radiant at 410 nm ............................................. 85 mA/W ●High Anode Sensitivity (at 1000 V) Luminous ......................................................... 1560 A/lm Radiant at 410 nm ..................................... 10.2 × 105 A/W ●Low Dark Current ....................................................... 0.2 nA ●Low Dark Counts (R7518P) ......................................... 10 s-1 APPLICATIONS ●Chemiluminescence Detection ●Bioluminescence Detection ●Fluorescence Spectrometer ●SO2 Monitor (UV Fluorescence) SPECIFICATIONS GENERAL Parameter Spectral Response Wavelength of Maximum Response MateriaI Photocathode Minimum Effective Area Window Material Secondary Emitting Surface Structure Dynode Number of Stages Anode to Last Dynode Direct Interelectrode Anode to All Other Electrode Capacitances Base Weight Operating Ambient Temperature Storage Temperature SuitabIe Socket SuitabIe Socket Assembly Description/Value 185 to 730 410 Low noise bialkali 8 × 24 UV glass Low noise bialkali Circular-cage 9 4 6 11-pin base JEDEC No. B11-88 45 -30 to +50 -30 to +50 E678–11A (Sold Separately) E717–63 (Sold Separately) Unit nm nm — mm — — — — pF pF — g °C °C — — Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office. Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2005 Hamamatsu Photonics K.K. PHOTOMULTIPLIER TUBES R7518, R7518P (For Photon Counting) MAXIMUM RATINGS (Absolute Maximum Values) Parameter Between Anode and Cathode Supply Voltage Between Anode and Last Dynode Average Anode Current A Value 1250 250 0.1 Unit V V mA CHARACTERISTlCS (at 25 °C) R7518 for General Purpose R7518P for Photon Counting Unit Typ. Max. Min. Min. Typ. Max. — % Quantum Efficiency at 300 nm (Peak) — — 29 29 — µA/lm — 120 Luminous B 120 130 130 — Cathode Sensitivity — mA/W — Radiant at 410 nm (Peak) — 85 — 85 — µA/lm-b Blue Sensitivity Index (CS 5-58) — — 10 — 10 — Luminous C A/lm 1200 1200 1560 — 1560 Anode Sensitivity — A/W Radiant at 400 nm — — 10.2 × 105 — 10.2 × 105 — 1.2 × 107 1.2 × 107 — — — — Gain D 2.0 Anode Dark Current E (After 30 min Storage in darkness) 0.2 0.2 nA — 0.5 — — Anode Dark Counts E — 10 s-1 — 50 — — ENI (Equivalent Noise Input) F W 2.7 × 10-17 2.7 × 10-17 — — — — 2.2 2.2 Anode Pulse Rise Time G ns — — — — Time Response D Electron Transit Time 22 22 ns — — — — Transit Time Spread (TTS) H 1.2 1.2 ns — — — — Light Hysteresis 0.1 0.1 % — — — J Anode Current Stability — Voltage Hysteresis 1.0 1.0 % — — — Parameter NOTES 2q.ldb.G. f (W) S where q = Electronic charge. (1.60 × 10-19 coulomb) ldb = Anode dark current(after 30 minute storage) in amperes. G = Gain. f = Bandwidth of the system in hertz. (usually 1 hertz) S = Anode radiant sensitivity in amperes per watt at the wavelength of peak response ENI = G:The rise time is the time for the output pulse to rise from 10% to 90% of the peak amplitude when the entire photocathode is illuminated by a delta function light pulse. H: The electron transit time is the interval between the arrival of delta function light pulse at the entrance window of the tube and the time when the anode output reaches the peak amplitude. In measurement, the whole photocathode is illuminated. J: Also called transit time jitter. This is the fluctuation in electron transit time between individual pulses in the signal photoelectron mode, and may be defined as the FWHM of the frequency distribution of electron transit times. K: Hysteresis is temporary instability in anode current after light and voltage are applied. lmax. Hysteresis = lmin. 100 (%) li ANODE CURRENT A: Averaged over any interval of 30 seconds maximum. B: The light source is a tungsten filament lamp operated at a distribution temperature of 2856 K. Supply voltage is 150 V between the cathode and all other electrodes connected together as anode. C: Measured with the same light source as Note B and with the anode-tocathode supply voltage and voltage distribution ratio shown in Table 1 below. D: Measured with the same supply voltage and voltage distribution ratio as Note E after removal of light. E: Measured at the voltage producing the gain of 1 × 106. F: ENI is an indication of the photon-limited signal-to-noise ratio. It refers to the amount of light in watts to produce a signal-to-noise ratio of unity in the output of a photomultiplier tube. l max. li l min. TIME 5 0 6 7 (minutes) TPMSB0002EA (1)Current Hysteresis The tube is operated at 750 V with an anode current of 1 µA for 5 minutes. The light is then removed from the tube for a minute. The tube is then re-illuminated by the previous light level for a minute to measure the variation. (2)Voltage Hysteresis The tube is operated at 300 V with an anode current of 0.1 µA for 5 minutes. The light is then removed from the tube and the supply voltage is quickly increased to 800 V. After a minute, the supply voltage is then reduced to the previous value and the tube is re-illuminated for a minute to measure the variation. Table 1:Voltage Distribution Ratio Electrodes Distribution Ratio K Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9 1 1 1 1 1 1 1 1 1 P 1 SuppIy Voltage : 1000 V, K: Cathode, Dy: Dynode, P: Anode Figure 1: Typical Spectral Response 10-5 CATHODE RADIANT SENSITIVITY TPMSB0011EA 108 10-6 107 10-7 106 GAIN 105 10-9 CU RR EN T 1 10-8 DA RK QUANTUM EFFICIENCY 10-10 0.1 10-11 0.01 100 200 300 400 500 600 700 400 500 600 800 101 1500 1000 SUPPLY VOLTAGE (V) WAVELENGTH (nm) Figure 3: Typical Time Response 100 103 102 10-12 300 800 104 AN O DE 10 G AI N 100 ANODE DARK CURRENT (A) CATHODE RADIANT SENSITIVITY (mA/W) QUANTUM EFFICIENCY (%) 1000 Figure 2: Typical Gain and Anode Dark Current TPMSB0177EA Figure 4: Typical ENI vs. Wavelength TPMSB0004EB 10-13 TPMSB0178EA EQUIVALENT NOISE INPUT (W) 80 60 40 TRAN SIT T IME TIME (ns) 20 10 8 6 10-14 10-15 10-16 4 RISE 10-17 100 TIME 200 300 400 500 600 700 800 2 WAVELENGTH (nm) 1 500 300 700 1000 1500 SUPPLY VOLTAGE (V) Figure 5: Typical Single Photon Pulse Height Distribution for R7518P TPMSB0179EB 0.8 0.6 104 WAVELENGTH OF INCIDENT LIGHT: 450 (nm) : 722 (V) SUPPLY VOLTAGE : 67 (ch) LOWER LEVEL DISCRI. PHOTON + DARK COUNT : 6021 (s-1) : 10 (s-1) DARK COUNT AMBIENT TEMPERATURE : 25 (°C) 0.4 PHOTON+DARK 0.2 TPMSB0015EB 103 DARK COUNT (s-1) LOWER LEVEL DISCRI. COUNT PER CHANNEL FULL SCALE 104 (PHOTON+DARK) FULL SCALE 103 (DARK) 1.0 Figure 6: Typical Temperature Characteristics of Dark Count for R7518P 102 101 100 DARK 0 200 400 600 800 CHANNEL NUMBER (CH) 1000 10-1 -20 0 +20 TEMPERATURE (°C) +40 +50 PHOTOMULTIPLIER TUBES R7518, R7518P (For Photon Counting) Figure 7: Dimensional Outline and Basing Diagram (Unit: mm) Figure 8: Socket E678-11A (Sold Separately) 28.5 ± 1.5 49 8 MIN. 38 PHOTOCATHODE 5 DY6 6 7 80 MAX. 94 MAX. 49.0 ± 2.5 DY7 8 DY8 DY3 3 DY2 33 24 MIN. DY4 4 3.5 DY5 9 DY9 2 5 10 P 1 11 K DY1 DIRECTION OF LIGHT 29 18 4 Bottom View (Basing Diagram) 32.2 ± 0.5 11 PIN BASE JEDEC No. B11-88 TACCA0064EA TPMSA0001EB Figure 9: D Type Socket Assembly E717-63 (Sold Separately) PMT 3.5 33.0 ± 0.3 5 SOCKET PIN No. 10 P 38.0 ± 0.3 49.0 ± 0.3 DY9 9 DY8 8 DY7 7 DY6 6 DY5 5 DY4 4 DY3 3 DY2 2 DY1 K 1 R9 C2 R8 C1 4 R6 R1 to R10 : 330 kΩ C1 to C3 : 10 nF R5 0.7 30.0 +0 -1 C3 R7 29.0 ± 0.3 450 ± 10 R10 SIGNAL GND SIGNAL OUTPUT RG-174/U(BLACK) POWER SUPPLY GND AWG22 (BLACK) 31.0 ± 0.5 R4 HOUSING (INSULATOR) POTTING COMPOUND R3 R2 R1 11 -HV AWG22 (VIOLET) TACCA0002EH * Hamamatsu also provides C4900 series compact high voltage power supplies and C6270 series DP type socket assemblies which incorporate a DC to DC converter type high voltage power supply. Warning–Personal Safety Hazards Electrical Shock–Operating voltages applied to this device present a shock hazard. WEB SITE http://www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Electron Tube Division 314-5, Shimokanzo, Iwata City, Shizuoka Pref., 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P. O. Box 6910, Bridgewater. N.J. 08807-0910, U.S.A., Telephone: (1)908-231-0960, Fax: (1)908-231-1218 E-mail: [email protected] Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658 E-mail: [email protected] France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10 E-mail: [email protected] United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road Welwyn Garden City Hertfordshire AL7 1BW, United Kingdom, Telephone: 44-(0)1707-294888, Fax: 44(0)1707-325777 E-mail: [email protected] North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171-41 SOLNA, Sweden, Telephone: (46)8-509-031-00, Fax: (46)8-509-031-01 E-mail: [email protected] Italy: Hamamatsu Photonics Italia: S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)02-935 81 733, Fax: (39)02-935 81 741 E-mail: [email protected] TPMS1060E02 APR. 2005. 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