IMAGE SENSOR CCD area image sensor S10140/S10141 series Low readout noise, high resolution (pixel size: 12 µm) S10140/S10141 series is a family of back-thinned FFT-CCD image sensors specifically designed for low-light-level detection in scientific applications. By using the binning operation, S10140/S0141 series can be used as a linear image sensor having a long aperture in the direction of the device length. This makes S10140/S10141 series ideally suited for use in spectrophotometry. The binning operation offers significant improvement in S/N and signal processing speed compared with conventional methods by which signals are digitally added by an external circuit. S10140/S10141 series also features low noise and low dark signal (MPP mode operation). This enables low-light-level detection and long integration time, thus achieving a wide dynamic range. S10140/S10141 series has an effective pixel size of 12 × 12 µm and is available in image areas ranging from 12.288 (H) × 1.464 (V) mm2 (1024 × 122 pixels) up to a large image area of 24.576 (H) × 6.072 (V) mm2 (2048 × 506 pixels). Features Applications l Low readout noise: 4 e-rms Typ. l High resolution: pixel size 12 × 12 µm l Non-cooled type: S10140 series One-stage TE-cooled type: S10141 series l Line, pixel binning, area scanning l Greater than 90 % quantum efficiency at peak sensitivity wavelength l Wide spectral response range l Wide dynamic range l MPP operation l High UV sensitivity with good stability l Same pin connections as S7030/S7031 series l Fluorescence spectrometer, ICP l Industrial inspection requiring l Semiconductor inspection l DNA sequencer l Low-light-level detection ■ Selection guide Type No. S10140-1007 S10140-1008 S10140-1009 S10140-1107 S10140-1108 S10140-1109 S10141-1007S S10141-1008S S10141-1009S S10141-1107S S10141-1108S S10141-1109S Cooling Non-cooled One-stage TE-cooled Number of total pixels Number of active pixels Active area [mm (H) × mm (V)] 1044 × 128 1044 × 256 1044 × 512 2068 × 128 2068 × 256 2068 × 512 1044 × 128 1044 × 256 1044 × 512 2068 × 128 2068 × 256 2068 × 512 1024 × 122 1024 × 250 1024 × 506 2048 × 122 2048 × 250 2048 × 506 1024 × 122 1024 × 250 1024 × 506 2048 × 122 2048 × 250 2048 × 506 12.288 × 1.464 12.288 × 3.000 12.288 × 6.072 24.576 × 1.464 24.576 × 3.000 24.576 × 6.072 12.288 × 1.464 12.288 × 3.000 12.288 × 6.072 24.576 × 1.464 24.576 × 3.000 24.576 × 6.072 Suitable multichannel detector head C10150 C10151 ■ General ratings Parameter Pixel size Vertical clock phase Horizontal clock phase Output circuit Package Window *1 *1: Window-less is available upon request. S10140 series S10141 series 12 (H) × 12 (V) µm 2 phases 2 phases One-stage MOSFET source follower 24 pin ceramic DIP (refer to dimensional outlines) Quartz glass AR-coated sapphire 1 CCD area image sensor S10140/S10141 series ■ Absolute maximum ratings (Ta=25 °C) Parameter Operating temperature Storage temperature OD voltage RD voltage ISV voltage ISH voltage IGV voltage IGH voltage SG voltage OG voltage RG voltage TG voltage Vertical clock voltage Horizontal clock voltage Symbol Topr Tstg VOD VRD VISV VISH VIG1V, VIG2V VIG1H, VIG2H VSG VOG VRG VTG VP1V, VP2V VP1H, VP2H Min. -50 -50 -0.5 -0.5 -0.5 -0.5 -10 -10 -10 -10 -10 -10 -10 -10 Typ. - Max. +30 +70 +30 +18 +18 +18 +15 +15 +15 +15 +15 +15 +15 +15 Unit °C °C V V V V V V V V V V V V Symbol VOD VRD VOG VSS VISV VISH VIG1V, VIG2V VIG1H, VIG2H VP1VH, VP2VH VP1VL, VP2VL VP1HH, VP2HH VP1HL, VP2HL VSGH VSGL VRGH VRGL VTGH VTGL Min. -9 -9 - Typ. 24 12 3 0 VRD VRD -8 -8 3 -8 5 -8 5 -8 5 -8 3 -8 Max. 0 0 - Unit V V V V V V V V Max. 500 18 - Unit kHz pF pF pF pF pF V kΩ mW ■ Operating conditions (MPP mode, Ta=25 °C) Parameter Output transistor drain voltage Reset drain voltage Output gate voltage Substrate voltage Test point (vertical input source) Test point (horizontal input source) Test point (vertical input gate) Test point (horizontal input gate) Vertical shift register clock voltage Horizontal shift register clock voltage Summing gate voltage Reset gate voltage Transfer gate voltage High Low High Low High Low High Low High Low V V V V V ■ Electrical characteristics (Ta=25 °C) Parameter Symbol Min. Typ. Signal output frequency fc 250 Vertical shift register capacitance *2 CP1V, CP2V 3600 Horizontal shift register capacitance *2 CP1H, CP2H 150 Summing gate capacitance CSG 30 Reset gate capacitance CRG 30 Transfer gate capacitance CTG 75 Charge transfer efficiency *3 CTE 0.99995 0.99999 DC output level *4 Vout 12 17 Output impedance *4 Zo 8 Power consumption *4 *5 P 4 *2: S10140-1108, S10141-1108S *3: Charge transfer efficiency per pixel, measured at half of the full well capacity. *4: The values depend on the load resistance. (Typical, VOD=24 V, Load resistance=100 kΩ) *5: Power consumption of the on-chip amplifier 2 CCD area image sensor S10140/S10141 series ■ Electrical and optical characteristics (Ta=25 °C , unless otherwise noted) Param eter Saturation output voltage Vertical Full well capacity H orizontal Sum m ing C C D node sensitivity Sym bol Vsat Fw Sv 25 °C D ark current * 6 MPP m ode DS 0 °C R eadout noise * 7 Min. 60 120 150 4 Typ. Fw × Sv 75 150 200 5 Max. 6 - 100 1000 - 5 50 4 37500 18500 ±3 200 to 1100 - 18 ±10 0 10 3 0 Nr Line binning 30000 Dynamic range *8 DR Area scanning 15000 Photo response non-uniform ity * 9 PR N U λ Spectral response range W hite spots 10 Point defect * Black spots Blem ish C luster defect * 11 C olum n defect * 12 *6: D ark current nearly doubles for every 5 to 7 °C increase in tem perature. *7: -50 °C, O perating frequency is 20 kH z. *8: D ynam ic range (DR ) = Full well/Readout noise *9: Measured at the half of the full well capacity output. Photo response non-uniformity (PRNU) [%] Fixed pattern noise (peak to peak) U nit V ke - - µV/e e /pixel/ s e rm s % nm - × 100 Signal *10: W hite spots Pixels whose dark current is higher than 1 ke - after one-second integration at 0 °C . Black spots Pixels whose sensitivity is lower than one-half of the average pixel output. (Measured with uniform light producing one-half of the saturation charge) *11: 2 to 9 contiguous defective pixels *12: 10 or m ore contiguous defective pixels ■ Spectral response (without window) *10 90 80 TRANSMITTANCE (%) 80 70 60 50 40 30 FRONT-ILLUMINATED (UV COAT) 20 10 QUARTZ WINDOW 70 AR COATED SAPPHIRE 60 50 40 30 20 10 FRONT-ILLUMINATED 0 200 (Typ. Ta=25 ˚C) 100 BACK-THINNED S10140/S10141 SERIES 90 QUANTUM EFFICIENCY (%) ■ Spectral transmittance characteristics (Typ. Ta=25 ˚C) 100 400 600 800 1000 1200 0 100 200 300 400 500 600 700 800 900 1000 1100 1200 WAVELENGTH (nm) WAVELENGTH (nm) KMPDB0254EA *10: Spectral response with quartz glass or AR-coated sapphire are decreased by the transmittance. ■ Dark current vs. temperature ● W indow material Type No. W indow material S10140 series Quartz glass *11 (option: window-less) S10141 series AR-coated sapphire *12 (option: window-less) (Typ.) 1000 DARK CURRENT (e-/pixel/s) KMPDB0110EA 100 S10142 series (two-stage TE-cooled types, made to order) *11: Resin sealing *12: Hermetic sealing 10 1 AR-coated sapphire *12 (option: window-less) 0.1 0.01 -50 -40 -30 -20 -10 0 10 20 30 TEMPERATURE (˚C) KMPDB0255EA 3 CCD area image sensor S10140/S10141 series ■ Device structure (Conceptual drawing of top view) THINNING 22 21 15 20 13 14 H 1 n 24 2 5 4 3 2 12345 4 BEVEL THINNING V SIGNAL OUT 2 BEVEL 23 12 2 11 3 4 BLANK 4 5 8 2 6 BEVEL n V=122, 250, 506 H=1024, 2048 10 9 4 BLANK SIGNAL OUT 6 BEVEL KMPDC0244EA ■ Timing chart Line bininng INTEGRATION PERIOD (Shutter must be open) Tpwv 1 P1V VERTICAL BINNING PERIOD READOUT PERIOD (Shutter must be closed) (Shutter must be closed) 64← 58 + 6 (BEVEL): S1014*-1007/-1107 63 3.. 62 128← 122 + 6 (BEVEL): S1014*-1008/-1108 3..126 127 256← 250 + 6 (BEVEL): S1014*-1009/-1109 3..254 255 2 Tovr P2V, TG 4..530 531 4..1042 1043 Tpwh, Tpws P1H 1 2 532 : S1014*-1007/-1008/-1009 1044: S1014*-1107/-1108/-1109 3 P2H, SG Tpwr RG OS D1 D2 S1..S512 D19 D3..D10, S1..S1024, D11..D18 D20 : S1014*-1007/-1008/-1009 : S1014*-1107/-1108/-1109 KMPDC0242EA Parameter Symbol Pulse width Tpwv P1V, P2V, TG Rise and fall time Tprv, Tpfv Pulse width Tpwh P1H, P2H Rise and fall time Tprh, Tpfh Duty ratio Pulse width Tpws SG Rise and fall time Tprs, Tpfs Duty ratio Pulse width Tpwr RG Rise and fall time Tprr, Tpfr TG – P1H Overlap time Tovr *13: The clock pulses should be overlapped at 50 % of clock pulse amplitude. 4 Remark *13 *13 - Min. 6 20 1000 10 40 1000 10 40 100 5 1 Typ. 8 2000 50 2000 50 1000 2 Max. 60 60 - Unit µs ns ns ns % ns ns % ns ns µs CCD area image sensor S10140/S10141 series Area scanning INTEGRATION PERIOD (Shutter must be open) Tpwv 1 2 READOUT PERIOD (Shutter must be closed) 4.. 63 64← 58 + 6 (BEVEL): S1014*-1007/-1107 4..127 128←122 + 6 (BEVEL): S1014*-1008/-1108 4..255 256←250 + 6 (BEVEL): S1014*-1009/-1109 3 P1V P2V, TG P1H P2H, SG RG OS Tovr P2V, TG ENLARGED VIEW Tpwh, Tpws P1H P2H, SG Tpwr RG OS D1 D2 D3 D4 D18 S1..S512 D5..D10, S1..S1024, D11..D17 D19 D20 : S1014*-1007/-1008/-1009 : S1014*-1107/-1108/-1109 KMPDC0243EA Parameter Symbol Pulse width Tpwv P1V, P2V, TG Rise and fall time Tprv, Tpfv Pulse width Tpwh P1H, P2H Rise and fall time Tprh, Tpfh Duty ratio Pulse width Tpws SG Rise and fall time Tprs, Tpfs Duty ratio Pulse width Tpwr RG Rise and fall time Tprr, Tpfr TG - P1H Overlap time Tovr *14: The clock pulses should be overlapped at 50 % of clock pulse amplitude. Remark * 14 *14 - Min. 6 20 1000 10 40 1000 10 40 100 5 1 Typ. 8 2000 50 2000 50 1000 2 Max. 60 60 - Unit µs ns ns ns % ns ns % ns ns µs 5 S10140/S10141 series CCD area image sensor ■ Dimensional outlines (unit: mm) S10140-1007/-1008/-1009 S10140-1107/-1108/-1109 WINDOW 16.3 WINDOW 28.6 22.9 22.4 a 8.2 22.4 22.9 ACTIVE AREA 24.58 a 2.54 2.54 44.0 34.0 1st PIN INDICATION PAD 3.8 3.0 (24 ×) 0.5 (24 ×) 0.5 S10140-1007: a=1.464 S10140-1008: a=3.000 S10140-1009: a=6.072 S10140-1107: a=1.464 S10140-1108: a=3.000 S10140-1109: a=6.072 KMPDA0207EA S10141-1007S/-1008S/-1009S 4.8 PHOTOSENSITIVE SURFACE 4.8 4.4 2.4 3.0 3.8 PHOTOSENSITIVE SURFACE 4.4 1st PIN INDICATION PAD 2.4 8.2 ACTIVE AREA 12.29 KMPDA0208EA S10141-1107S/-1108S/-1109S WINDOW 16.3 WINDOW 28.6 44.0 42.0 52.0 50.0 60.0 (24 ×) 0.5 (24 ×) 0.5 S10141-1007S: a=1.464 S10141-1008S: a=3.000 S10141-1009S: a=6.072 7.7 7.3 1.0 3.0 TE-COOLER 6.7 PHOTOSENSITIVE SURFACE 4.8 7.7 7.3 1st PIN INDICATION PAD 1.0 3.0 6.7 4.8 PHOTOSENSITIVE SURFACE TE-COOLER S10141-1107S: a=1.464 S10141-1108S: a=3.000 S10141-1109S: a=6.072 KMPDA0209EB 6 22.9 2.54 2.54 34.0 1st PIN INDICATION PAD 22.4 19.0 4.0 4.0 a 8.2 22.9 22.4 19.0 ACTIVE AREA 24.58 a 8.2 ACTIVE AREA 12.29 KMPDA0210EB CCD area image sensor S10140/S10141 series ■ Pin connections Pin No. S10140 series Sym bol 1 RD 2 OS 3 OD 4 OG 5 SG 6 7 8 P2H 9 P1H 10 IG 2H 11 IG 1H 12 ISH 13 TG * 15 14 P2V 15 P1V 16 17 18 19 20 SS 21 ISV 22 IG 2V 23 IG 1V 24 RG *15: Isolation gate P2V. Rem ark (s ta n d a rd o p e r a t io n ) +12 V R L =100 kΩ +24 V +3 V S am e pulse as P 2H S10141 series Function Sym bol Function Reset drain O utput transistor source O utput transistor drain O utput gate Sum m ing gate RD Reset drain OS O utput transistor source OD O utput transistor drain OG O utput gate SG Sum m ing gate CCD horizontal register clock-2 P2H CCD horizontal register clock-2 CCD horizontal register clock-1 P1H CCD horizontal register clock-1 Test point (horizontal input gate-2) IG 2H Test point (horizontal input gate-2) Test point (horizontal input gate-1) IG 1H Test point (horizontal input gate-1) Test point (horizontal input source) ISH Test point (horizontal input source) Connect to RD S am e pulse as P 2V Transfer gate TG * 15 Transfer gate CCD vertical register clock-2 P2V CCD vertical register clock-2 CCD vertical register clock-1 P1V CCD vertical register clock-1 Th1 Therm istor Th2 Therm istor PTE-coolerP+ TE-cooler+ Substrate (G ND) SS Substrate (G ND) GND Test point (vertical input source) ISV Test point (vertical input source) Connect to RD Test point (vertical input gate-2) IG 2V Test point (vertical input gate-2) Test point (vertical input gate-1) IG 1V Test point (vertical input gate-1) Reset gate RG Reset gate between vertical register and horizontal register. In standard operation, TG should be applied the sam e pulse as ■ Specifications of built-in T E-cooler (Typ.) S 1 0 1 4 1-1 0 0 7 S /-1 0 0 8 S /-1 0 0 9 S S 1 0 1 4 1 -1 1 0 7 S /-1 1 0 8 S /-1 1 0 9 S Param eter Sym bol Condition Unit Ω Internal resistance Rint Ta=25 °C 2.5 1.2 Maxim um current * 16 Im ax Tc * 17 =Th * 18 =25 °C 1.5 3.0 A Maxim um voltage Vm ax Tc * 17 =Th * 18 =25 °C 3.8 3.6 V M axim um heat absorption * 19 Q m ax 3.4 5.1 W Maxim um tem perature 70 70 °C of heat radiating side *16: Maxim um current Im ax: If the current greater than this value flows into the therm oelectric cooler, the heat absorption begins to decrease due to the Joule heat. It should be noted that this value is not the dam age threshold value. To protect the therm oelectric cooler and m aintain stable operation, the supply current should be less than 60 % of this m axim um current. *17: Tem perature of the cooling side of therm oelectric cooler. *18: Tem perature of the heat radiating side of therm oelectric cooler. *19: Maxim um heat absorption Q m ax. This is a theoretical heat absorption level that offsets the tem perature difference in the therm oelectric cooler when the m axim um current is supplied to the unit. (Typ. Ta=25 ˚C) VOLTAGE (V) 6 30 20 5 10 4 0 3 -10 4 0 3 -10 2 -20 -30 -30 1 -40 2.0 0 1.0 1.5 CURRENT (A) 20 10 1 0.5 30 5 -20 0 VOLTAGE vs. CURRENT CCD TEMPERATURE vs. CURRENT 6 2 0 (Typ. Ta=25 ˚C) 7 VOLTAGE (V) VOLTAGE vs. CURRENT CCD TEMPERATURE vs. CURRENT CCD TEMPERATURE (˚C) 7 S10141-1107S/-1108S/-1109S 0 1 2 3 4 CCD TEMPERATURE (˚C) S10141-1007S/-1008S/-1009S -40 CURRENT (A) KMPDB0178EA KMPDB0179EA 7 CCD area image sensor S10140/S10141 series ■ Specifications of built-in temperature sensor A chip thermistor is built in the same package with a CCD chip, and the CCD chip temperature can be monitored with it. A relation between the thermistor resistance and absolute temperature is expressed by the following equation. 1 MΩ The characteristics of the thermistor used are as follows. R (298K) = 10 kΩ B (298K / 323K) = 3450 K RESISTANCE R1 = R2 × expB (1 / T1 - 1 / T2) where R1 is the resistance at absolute temperature T1 (K) R2 is the resistance at absolute temperature T2 (K) B is so-called the B constant (K) 100 kΩ 10 kΩ 220 240 260 280 300 TEMPERATURE (K) KMPDB0111EB ■ Precaution for use (Electrostatic countermeasures) ● Handle these sensors with bare hands or wearing cotton gloves. In addition, wear anti-static clothing or use a wrist band with an earth ring, in order to prevent electrostatic damage due to electrical charges from friction. ● Avoid directly placing these sensors on a work-desk or work-bench that may carry an electrostatic charge. ● Provide ground lines or ground connection with the work-floor, work-desk and work-bench to allow static electricity to discharge. ● Ground the tools used to handle these sensors, such as tweezers and soldering irons. It is not always necessary to provide all the electrostatic measures stated above. Implement these measures according to the amount of damage that occurs. ■ Element cooling/heating temperature incline rate When cooling the CCD by an externally attached cooler, set the cooler operation so that the temperature gradient (rate of temperature change) for cooling or allowing the CCD to warm back is less than 5 K/minute. Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2007 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Cat. No. KMPD1094E05 Oct. 2007 DN 8