PHOTODIODE Si photodiode S2592/S3477 series Thermoelectrically cooled photodiode for low-light-level detection in UV to near IR S2592/S3477 series sensors combine a UV to near infrared Si photodiode with a thermoelectric cooler. A thermistor is also included in the same package to sense the Si photodiode chip temperature. This allows stable operation over long periods of time, making these sensors suitable for low-light-level detection where a high S/N is required. S2592 series is hermetically sealed in a TO-8 package, and S3477 series in a TO-66 package. A dedicated temperature controller (C1103-04) and heatsink (A3179 series) are also available as options (sold separately). Features Applications l High S/N l High UV sensitivity l Built-in thermistor allows stable operation l Low-light-level detection ■ General ratings Parameter Built-in photodiode Window material Active area Package S2592-03 S3477-03 S2592-04 S1336 series Sapphire glass 2.4 × 2.4 TO-8 S3477-04 5.8 × 5.8 TO-66 TO-8 Unit mm TO-66 ■ Absolute maximum ratings Parameter Symbol Reverse voltage VR Operating temperature Topr Storage temperature Tstg Allowable current for Ite thermoelectric cooler T h er mistor po w er dissipation Pth Value 5 -40 to +70 -55 to +85 Unit V °C °C 1.5 A 0.2 mW ■ Electrical and optical characteristics (Typ. Ta=25 °C) Parameter Spectral response range Peak sensitivity wavelength Photo sensitivity Short circuit current Dark current Temperature coefficient of dark current Rise time Terminal capacitance Shunt resistance Noise equivalent power Cooling temperature Symbol Condition λ λp S λ=λp 100 lx, 2856 K Isc ID VR=10 mV S2592-03 S3477-03 S2592-04 190 to 1100 960 0.5 5 10 TCID tr Ct Rsh NEP ∆T S3477-04 28 25 1.15 VR=0 V, RL=1 kΩ VR=0 V VR=10 mV VR=0 V, λ=λp 0.2 65 1 8.1 × 10-15 times/°C 1 380 0.4 1.3 × 10-14 35 Unit nm nm A/W µA pA µs pF GΩ W/Hz1/2 °C 1 Si photodiode ■ Spectral response ■ Photo sensitivity temperature characteristic (Typ. Ta=25 ˚C) 0.7 (Typ. ) TEMPERATURE COEFFICIENT (%/˚C) +1.5 0.6 PHOTO SENSITIVITY (A/W) S2592/S3477 series 0.5 0.4 0.3 0.2 0.1 190 400 600 800 +1.0 +0.5 0 -0.5 190 1000 WAVELENGTH (nm) 400 600 800 1000 WAVELENGTH (nm) KSPDB0182EA ■ Shunt resistance vs. element temperature ■ Cooling characteristics of TE-cooler (Typ. VR=10 mV) 1 TΩ ELEMENT TEMPERATURE (˚C) 10 GΩ S2592-03, S3477-03 1 GΩ 100 MΩ (Typ. Ta=25 ˚C, thermal resistance of heatsink=3 ˚C/W) 40 100 GΩ SHUNT RESISTANCE KSPDB0053EB S2592-04, S3477-04 10 MΩ 1 MΩ 20 0 S2592 SERIES -20 S3477 SERIES -40 100 kΩ 10 kΩ −20 -60 0 20 40 60 80 0 0.4 0.8 1.2 1.6 CURRENT (A) ELEMENT TEMPERATURE (˚C) KSPDB0183EA ■ Current vs. voltage characteristic of TE-cooler 1.6 KSPDB0184EA ■ Thermistor temperature characteristic (Typ. Ta=25 ˚C, thermal resistance of heatsink=3 ˚C/W) (Typ.) 106 1.4 RESISTANCE (Ω) CURRENT (A) 1.2 1.0 0.8 0.6 105 104 0.4 0.2 0 0 0.2 0.4 0.6 0.8 1.0 1.2 VOLTAGE (V) -20 0 20 ELEMENT TEMPERATURE (˚C) KSPDB0185EB 2 103 -40 KIRDB0116EA Si photodiode S2592/S3477 series ■ Dimensional outlines (unit: mm) S2592 series 15.3 ± 0.2 6.4 ± 0.2 1.5 ± 0.2 14 ± 0.2 WINDOW 10 ± 0.2 12 MIN. PHOTOSENSITIVE SURFACE 0.45 LEAD 5.1 ± 0.2 10.2 ± 0.2 DETECTOR (ANODE) DETECTOR (CATHODE) TE-COOLER (-) TE-COOLER (+) THERMISTOR 5.1 ± 0.2 KSPDA0133EA S3477 series 32 MAX. 17 ± 0.4 24.4 ± 0.1 3.7 20 ± 1 PHOTOSENSITIVE SURFACE 8.6 ± 0.2 14 ± 0.1 4.1 ± 0.2 WINDOW 10 ± 0.1 9.3 THERMISTOR THERMISTOR DETECTOR (ANODE) DETECTOR (CATHODE) TE-COOLER (-) TE-COOLER (+) KSPDA0134EC 3 Si photodiode S2592/S3477 series Temperature controller for TE-cooled detector C1103-04 By adjusting the current flowing through the thermoelectric cooler in a onestage or two-stage thermoelectrically cooled detector, C1103-04 maintains the detector element at a constant temperature. The cooling temperature can be easily set by using the control knob on the front panel. ■ Accessories Instruction manual 4-conductor cable (with a connector) A4372-05 ■ Specifications (common) S etting e lem e nt te m perature -30 to +20 °C Applicable detectors O ne-stage or two-stage therm oelectrically cooled detectors Temperature stability Within ±0.1 °C Tem perature control output current 1.2 A Max. Power supply 100 V ± 10 % • 50/60 Hz * Power consumption 30 VA Dimensions and weight 108 (W) × 87 (H) × 190 (D) mm/1.9 kg approx. Operating temperature +10 to +40 °C Operating humidity Equal to or less than 90 % Storage temperature +10 to +40 °C * Power requirement (AC line voltage) can be selected from among 100 V, 115 V and 230 V at the factory prior to shipping. ■ Block diagram TE-COOLED DETECTOR C1103-04 THERMISTOR COMPARATOR AMP CIRCUIT CURRENT CIRCUIT TE-COOLED DETECTOR C1103-04 conforms to European EMC directives (89/336/EEC) and LVD (73/23/EEC). POWER SUPPLY AC INPUT KACCC0143EA Heatsink for TE-cooled detector (TO-8 package) KOTHC0005EA A3179 A3179 series heatsinks are designed for thermoelectrically cooled detectors having a 6-pin TO-8 package. Heat dissipation capacity for A3179 is about 35 °C versus the ambient temperature 25 °C. ■ Dimensional outlines (unit: mm) 26 32 3 BOTTOM SURFACE (REFERENCE POINT) OF DETECTOR METAL PACKAGE 3 46 PHOTOSENSITIVE SURFACE *2 DETECTOR METAL PACKAGE 0.4 ± 0.3 *1 32 (4 ×) 3.5 40 60˚ 32.6 Weight: 50 g approx. *1: When detector element is installed. *2: The position of the photosensitive surface differs according to the detector element used. Refer to the dimensional outline for the detector. KIRDA0018EB Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2006 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 4 Cat. No. KSPD1003E06 Aug. 2006 DN