PHOTODIODE Si PIN photodiode S2744/S3588-08, -09 Large area sensors for scintillation detection Features Applications ● Higher sensitivity and low dark current than conventional type ● Sensitivity matching with BGO and CsI (TI) scintillators ● High quantum efficiency QE=85 % (λ=540 nm) ● Low capacitance ● High-speed response ● High stability ● Good energy resolution ● Scintillation detectors ● Calorimeters ● Hodoscopes ● TOF counters ● Air shower counters ● Particle detectors, etc. ■ General ratings / Absolute maximum ratings Type No. S2744-08 S2744-09 S3588-08 S3588-09 Dimensional outline Window material ➀ Epoxy resin Window-less Epoxy resin Window-less ➁ Active area Depletion layer thickness (mm) (mm) Absolute maximum ratings Power Operating dissipation temperature P Topr (mW) (°C) Reverse voltage VR Max. Storage temperature Tstg (°C) 10 × 20 0.3 100 100 -20 to +60 -20 to +80 3 × 30 ■ Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted) Type No. S2744-08 S2744-09 S3588-08 S3588-09 S p ectral response range λ P e ak sensitivity wavelength λp (nm) (nm) 320 to 1100 960 Photo sensitivity S λ=λp (A/W) 0.66 0.66 0.66 0.66 LSO BGO CsI(Tl) 420 nm 480 nm 540 nm (A/W) (A/W) (A/W) 0.20 0.30 0.36 0.22 0.33 0.41 0.20 0.30 0.36 0.22 0.33 0.41 Dark S h ort Terminal current circuit capacitance Cut-off Temp. ID current Ct NEP coefficient Frequency R V =70 V f= 1 M H z V R = 70 V Isc fc of ID 100 lx Typ. Max. TCID V R = 70 V V R = 70 V (µA) (nA) (nA) (times/° C) (MHz) 200 3 90 10 (pF) 25 85 40 40 (W/Hz 1/2 ) 4.7 × 10 -14 1.12 S2744/S3588-08, -09 Si PIN photodiode ■ Spectral response (Typ. Ta=25 ˚C) S2744/S3588-09 0.5 0.4 S2744/S3588-08 0.2 0.1 400 600 800 1000 1 nA +1.0 +0.5 0 -0.5 200 1200 WAVELENGTH (nm) 400 600 800 1 pA 0.1 1000 1 10 100 REVERSE VOLTAGE (V) KPINB0220EA KPINB0093EC KPINB0265EB ■ Terminal capacitance vs. reverse voltage (Typ. VR=70 V) 1 µA 100 pA 10 pA WAVELENGTH (nm) ■ Dark current vs. ambient temperature (Typ. Ta=25 ˚C) 10 nA DARK CURRENT PHOTO SENSITIVITY (A/W) 0.6 0 200 (Typ.) +1.5 TEMPERATURE COEFFICIENT (%/˚C) 0.7 0.3 ■ Dark current vs. reverse voltage ■ Photo sensitivity temperature characteristic (Typ. Ta=25 ˚C, f=1 MHz) 10 nF TERMINAL CAPACITANCE DARK CURRENT 100 nA 10 nA 1 nA 100 pA 10 pA 1 pA -20 0 20 40 60 80 AMBIENT TEMPERATURE (˚C) 1 nF S2744-08/-09 100 pF S3588-08/-09 10 pF 0.1 KPINB0221EA 1 10 100 REVERSE VOLTAGE (V) KPINB0222EB ■ Dimensional outlines (unit: mm) ➀ S2744-08/-09 ➁ S3588-08/-09 3.0 +0 ACTIVE AREA 2.0 ± 0.2 0.45 WHITE CERAMIC PHOTOSENSITIVE SURFACE 10 PHOTOSENSITIVE SURFACE 10 0.5 ACTIVE AREA 1.52 ± 0.2 10.0 +0 30.0 1.2 20.0 14.2 - 0.4 2.0 5.8 -0.4 34.0 +0 - 0.8 27.0 +0 - 0.6 WHITE CERAMIC 0.45 LEAD 1.1 2.5 ± 0.2 2.5 5.0 ± 0.2 0.45 LEAD The coating resin may extend a maximum of 0.1 mm beyond the upper surface of the package. The coating resin may extend a maximum of 0.1 mm beyond the upper surface of the package. KPINA0039EB KPINA0042EB Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2006 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Cat. No. KPIN1049E04 Mar. 2006 DN