PHOTODIODE Si PIN photodiode S3590-18/-19 Large area Si PIN photodiode for scintillation counting Features Applications l Suitable for coupling with blue scintillator (LSO, GSO, etc.) l Radiation detection (PET, etc.) l Internal quantum efficiency: 100 % (λ=420 nm) l X-ray detection l S3590-19: bare chip type (without window) ■ Absolute maximum ratings Parameter Reverse voltage Power dissipation Operating temperature Storage temperature Symbol VR P Topr Tstg Value 100 100 -20 to +60 -20 to +80 Unit V mW °C °C ■ Electrical and optical characteristics (Ta=25 °C) Parameter Symbol Spectral response range λ Peak sensitivity wavelength λp Photo sensitivity Short circuit current Dark current Temperature coefficient of I, Cut-off frequency Terminal capacitance Noise equivalent power S Isc ID TCID fc Ct NEP Condition - S3590-18 Typ. 320 to 1100 960 0.65 0.28 0.34 0.38 100 4 1.12 - 40 - - 40 - MHz - 40 7.6 × 10-14 - - 40 7.6 × 10-14 - pF W/Hz1/2 Min. - λ=λp λ=420 nm (LSO) λ=480 nm (BGO) λ=540 nm (CsI) 100 lx VR=70 V VR=70 V, -3 dB RL=50 Ω VR=70 V, f=1 MHz Max. Min. - - 10 - - S3590-19 Typ. 320 to 1100 960 0.58 0.33 0.37 0.4 86 4 1.12 Max. Unit - nm 10 - nm A/W A/W A/W A/W µA nA times/°C Si PIN photodiode S3590-18/-19 ■ Spectral response S3590-18 S3590-19 (Bare chip type) (Typ. Ta=25 ˚C) (Typ. Ta=25 ˚C) 0.7 0.7 QE=100 % 0.6 S3590-08 PHOTO SENSITIVITY (A/W) PHOTO SENSITIVITY (A/W) 0.6 QE=100 % 0.5 0.4 0.3 S3590-18 0.2 0.1 S3590-09 0.5 0.4 S3590-19 0.3 0.2 0.1 0 200 400 600 800 0 200 1000 WAVELENGTH (nm) 400 600 800 1000 WAVELENGTH (nm) KPINB0223EA ■ Dark current vs. reverse voltage KPINB0224EA ■ Terminal capacitance vs. reverse voltage (Typ. Ta=25 ˚C) (Typ. Ta=25 ˚C) 1 nF TERMINAL CAPACITANCE DARK CURRENT 100 nA 10 nA 1 nA 100 pA 0.1 10 1 100 pF 10 pF 0.1 100 1 10 100 REVERSE VOLTAGE (V) REVERSE VOLTAGE (V) KPINB0225EA KPINB0226EA ■ Dimensional outline (unit: mm) +0 14.5 -0.5 WHITE CERAMIC 0.45 LEAD 1.25 +0 10 PHOTOSENSITIVE SURFACE 5.0 ± 0.2 0.7 ACTIVE AREA 1.78 ± 0.2 10.0 10.0 12.7 - 0.5 1.4 The coating resin may extend a maximum of 0.1 mm beyond the upper surface of the package. KPINA0098EA Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2003 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, http://www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Cat. No. KPIN1039E01 Aug. 2003 DN