IMAGE SENSOR CCD area image sensor S7010/S7011/S7015 series Front-illuminated FFT-CCD S7010/S7011/S7015 series are families of FFT-CCD image sensors specifically designed for low-light-level detection in scientific applications. By using the binning operation, S7010/S7011/S7015 series can be used as a linear image sensor having a long aperture in the direction of the device length. This makes S7010/S7011/S7015 series ideally suited for use in spectrophotometry. The binning operation offers significant improvement in S/N and signal processing speed compared with conventional methods by which signals are digitally added by an external circuit. S7010/S7011/S7015 series also feature low noise and low dark signal (MPP mode operation). This enables low-light-level detection and long integration time, thus achieving a wide dynamic range. S7010/S7011/S7015 series have an effective pixel size of 24 × 24 µm and are available in image areas ranging from 12.288 (H) × 1.44 (V) mm2 (512 × 60 pixels) up to a large image area of 24.576 (H) × 6.048 (V) mm2 (1024 × 252 pixels). Features Applications l 512 (H) × 60 (V) to 1024 (H) × 252 (V) pixel format l Pixel size: 24 × 24 µm l Line/pixel binning l 100 % fill factor l Wide dynamic range l Low dark signal l Low readout noise l MPP operation l Fluorescence spectrometer, ICP l Raman spectrometer l Industrial inspection requiring l Semiconductor inspection l DNA sequencer l Low-light-level detection ■ Selection guide Type No. S7010-0906 S7010-0907 S7010-0908 S7010-1006 S7010-1007 S7010-1008 S7011-0906 S7011-0907 S7011-1006 S7011-1007 S7015-0908 S7015-1008 Cooling Number of total pixels Number of active pixels Active area [mm (H) × mm (V)] 532 × 64 532 × 128 532 × 256 1044 × 64 1044 × 128 1044 × 256 532 × 64 532 × 128 1044 × 64 1044 × 128 532 × 256 1044 × 256 512 × 60 512 × 124 512 × 252 1024 × 60 1024 × 124 1024 × 252 512 × 60 512 × 124 1024 × 60 1024 × 124 512 × 252 1024 × 252 12.288 × 1.440 12.288 × 2.976 12.288 × 6.048 24.576 × 1.440 24.576 × 2.976 24.576 × 6.048 12.288 × 1.440 12.288 × 2.976 24.576 × 1.440 24.576 × 2.976 12.288 × 6.048 24.576 × 6.048 Non-cooled One-stage TE-cooled ■ General ratings Parameter Pixel size Vertical clock phase Horizontal clock phase Output circuit Package Window *1 *1: Window-less is available upon request. *2: Sapphire glass is available upon request. Suitable multichannel detector Head C7020 C7021 C7025 Specification 24 (H) × 24 (V) µm 2 phase 2 phase One-stage MOSFET source follower 24 pin ceramic DIP (refer to dimensional outlines) S7010 series: quartz glass S7011 series: sapphire glass S7015 series: quartz glass *2 1 CCD area image sensor ■ A b s o lu te m a x im u m ra tin g s (T a = 2 5 ° C ) P a ra m e te r O p e ra tin g te m p e ra tu re S to ra g e te m p e ra tu re O D v o lta g e R D v o lta g e IS V v o lta g e IS H v o lta g e IG V v o lta g e IG H v o lta g e S G v o lta g e O G v o lta g e R G v o lta g e T G v o lta g e V e rtic a l c lo c k v o lta g e H o riz o n ta l c lo c k v o lta g e S ym bol Topr T s tg VOD VRD V IS V V IS H V IG 1 V , V IG 2 V V IG 1 H , V IG 2 H VSG VOG VRG VTG V P1V, V P2V V P1H , V P2H ■ O p e ra tin g c o n d itio n s (M P P m o d e , T a = 2 5 ° C ) P a ra m e te r O u tp u t tra n s is to r d ra in v o lta g e R e s e t d ra in v o lta g e O u tp u t g a te v o lta g e S u b s tra te v o lta g e T e s t p o in t (v e rtic a l in p u t s o u rc e ) T e s t p o in t (h o riz o n ta l in p u t s o u rc e ) T e s t p o in t (v e rtic a l in p u t g a te ) T e s t p o in t (h o riz o n ta l in p u t g a te ) H ig h V e rtic a l s h ift re g is te r c lo c k v o lta g e Low H ig h H o riz o n ta l s h ift re g is te r c lo c k v o lta g e Low H ig h S u m m in g g a te v o lta g e Low H ig h R e s e t g a te v o lta g e Low H ig h T ra n s fe r g a te v o lta g e Low S ym bol VOD VRD VOG VSS V IS V V IS H V IG 1 V , V IG 2 V V IG 1 H , V IG 2 H V P1VH , V P2VH V P1VL, V P2VL V P1H H , V P2H H V P1H L, V P2H L VSGH VSGL VRGH VRGL VTGH VTGL S7010/S7011/S7015 series M in . -5 0 -5 0 -0 .5 -0 .5 -0 .5 -0 .5 -1 0 -1 0 -1 0 -1 0 -1 0 -1 0 -1 0 -1 0 Typ. - M a x. +30 +70 +25 +18 +18 +18 +15 +15 +15 +15 +15 +15 +15 +15 U n it °C °C V V V V V V V V V V V V M in . 18 1 1 .5 1 -8 -8 4 -9 4 -9 4 -9 4 -9 4 -9 Typ. 20 12 3 0 VRD VRD 0 0 6 -8 6 -8 6 -8 6 -8 6 -8 M a x. 22 1 2 .5 5 8 -7 8 -7 8 -7 8 -7 8 -7 U n it V V V V V V V V M a x. 1 18 - U n it MHz pF pF pF pF pF V kW mW M a x. 3000 150 12 ±10 - U n it V ■ E le c tric a l c h a ra c te ris tic s (Ta = 2 5 ° C ) P a ra m e te r S ym bol M in . Typ. S ig n a l o u tp u t fre q u e n c y fc V e rtic a l s h ift re g is te r c a p a c ita n c e * 3 C P1V, C P2V 3 ,0 0 0 3 H o riz o n ta l s h ift re g is te r c a p a c ita n c e * C P1H , C P2H 120 S u m m in g g a te c a p a c ita n c e CSG 7 R e s e t g a te c a p a c ita n c e CRG 7 T ra n s fe r g a te c a p a c ita n c e C TG 120 C h a rg e tra n s fe r e ffic ie n c y * 4 CTE 0 .9 9 9 9 5 0 .9 9 9 9 9 D C o u tp u t le v e l * 5 Vout 12 15 O u tp u t im p e d a n c e * 5 Zo 3 P o w e r c o n s u m p tio n * 5 * 6 P 15 * 3 : S 7 0 1 0 /S 7 0 11 -1 0 0 7 * 4 : C h a rg e tra n s fe r e ffic ie n c y p e r p ix e l, m e a s u re d a t h a lf o f th e fu ll w e ll. * 5 : T h e v a lu e s d e p e n d o n th e lo a d re s is ta n c e . (ty p ic a l, V O D = 2 0 V, lo a d re s is ta n c e = 2 2 k W ) * 6 : P o w e r c o n s u m p tio n o f th e o n -c h ip a m p lifie r. ■ E le c tric a l a n d o p tic a l c h a ra c te ris tic s (Ta = 2 5 ° C , u n le s s o th e rw is e n o te d ) P a ra m e te r S a tu ra tio n o u tp u t v o lta g e F u ll w e ll c a p a c ity V e rtic a l Horizontal *7 C C D n o d e s e n s itiv ity D a rk c u rre n t * 8 M P P m o d e (te n ta tiv e d a ta ) R e a d o u t n o is e * 9 2 5 °C 0 °C S ym bol Vsat Fw Sv DS M in . 1 5 0 ,0 0 0 3 0 0 ,0 0 0 1 .8 2 5 ,0 0 0 1 2 ,0 0 0 - Nr L in e b in n n g D y n a m ic ra n g e DR A re a s c a n n in g P h o to re s p o n s e n o n -u n ifo rm ity * 1 1 PRNU S p e c tra l re s p o n s e ra n g e l * 7 : L a rg e h o riz o n ta l fu ll w e ll fo r v e rtic a l b in n in g o p e ra tio n . * 8 : D a rk c u rre n t n e a rly d o u b le s fo r e v e ry 5 to 7 ° C in c re a s e in te m p e ra tu re . * 9 : -4 0 ° C , o p e ra tin g fre q u e n c y is 1 5 0 k H z . * 1 0 : D y n a m ic ra n g e : D R = F u ll w e ll/R e a d o u t n o is e . * 11 : M e a s u re d a t h a lf o f fu ll w e ll c a p a c ity. P h o to re s p o n s e n o n -u n ifo rm ity : Fixed pattern noise (peak to peak) P R N U (% ) = × 100 Signal *10 2 Typ. Fw × Sv 3 0 0 ,0 0 0 6 0 0 ,0 0 0 2 .2 400 20 8 7 5 ,0 0 0 3 7 ,5 0 0 ±3 4 0 0 to 1 ,1 0 0 V V V V V e - µ V /e - - e /p ix e l/s - e rm s % nm CCD area image sensor S7010/S7011/S7015 series ■ Spectral response (without window) ■ Spectral transmittance characteristics (Typ. Ta=25 ˚C) 50 (Typ. Ta=25 ˚C) 100 80 TRANSMITTANCE (%) QUANTUM EFFICIENCY (%) 90 40 30 20 10 QUARTZ WINDOW 70 SAPPHIRE WINDOW 60 50 40 30 20 10 0 400 500 600 700 800 900 0 100 200 300 400 500 600 700 800 900 1000 1000 1100 1200 WAVELENGTH (nm) WAVELENGTH (nm) KMPDB0051EA KMPDB0101EA ■ Device structure, line output format IG1V IG2V ISV 24 23 22 SS 20 TG 16 P1V 15 P2V 14 ...... V 1 RD 2 OS 3 ...... ...... H D11 D12 D13 D14 D15 D16 D17 D18 D19 D20 RG D1 D2 D3 D4 D5 D6 D7 D8 D9 D10 1 V=60, 124, 252 H=512, 1024 13 ISH 12 IG1H 4 OD 5 OG 6 SG 9 10 11 IG2H 2 ISOLATION 512 or 2 ISOLATION P2H P1H 1024 4 OPTICAL SIGNAL OUT 4 OPTICAL 4 BLANK 4 BLANK BLACK BLACK KMPDC0015EB Pixel format Blank 4 Optical Black 4 Left ¬ Horizontal Direction ® Right Isolation Effective Isolation 2 512 or 1024 2 Optical Black 4 Blank 4 Top ¬ Vertical Direction ® Bottom Isolation Effective Isolation 2 60, 124 or 252 2 3 CCD area image sensor S7010/S7011/S7015 series ■ Timing chart Line binning INTEGRATION PERIOD (Shutter must be open) Tpwv 1 VERTICAL BINNING PERIOD READOUT PERIOD (Shutter must be closed) (Shutter must be closed) 64← 60 + 4 (ISOLATION): S701*-0906/-1006 63 3.. 62 128← 124 + 4 (ISOLATION): S701*-0907/-1007 3..126 127 256← 252 + 4 (ISOLATION): S701*-0908/-1008 3..254 255 2 P1V Tovr P2V, TG 4..530 531 4..1042 1043 Tpwh, Tpws P1H 1 2 3 532 : S701*-0906/-0907/-0908 1044: S701*-1006/-1007/-1008 P2H, SG Tpwr RG OS D1 D2 S1..S512 D19 D3..D10, S1..S1024, D11..D18 D20: S701*-0906/-0907/-0908 : S701*-1006/-1007/-1008 KMPDC0122EA Parameter Symbol Pulse width Tpwv P1V, P2V, TG Rise and fall time Tprv, Tpfv Pulse width Tpwh P1H, P2H Rise and fall time Tprh, Tpfh Duty ratio Pulse width Tpws SG Rise and fall time Tprs, Tpfs Duty ratio Pulse width Tpwr RG Rise and fall time Tprr, Tpfr TG P1H Overlap time Tovr *12: Symmetrical pulses should be overlapped at 50 % of maximum amplitude. *13: In case of S701 * -0908/-1007. Remark * * - Min. 6 *! Typ. 50 50 - 200 500 10 500 10 100 5 3 Area scanning 1: low dark current mode INTEGRATION PERIOD (Shutter must be open) Tpwv 1 2 READOUT PERIOD (Shutter must be closed) 4.. 63 64← 60 + 4 (ISOLATION): S701*-0906/-1006 4..127 128←124 + 4 (ISOLATION): S701*-0907/-1007 4..255 256←252 + 4 (ISOLATION): S701*-0908/-1008 3 P1V P2V, TG P1H P2H, SG RG OS Tovr P2V, TG ENLARGED VIEW Tpwh, Tpws P1H P2H, SG Tpwr RG OS D1 D2 D3 S1..S512 D4 D18 D5..D10, S1..S1024, D11..D17 D19 D20: S701*-0906/-0907/-0908 : S701*-1006/-1007/-1008 KMPDC0123EA 4 Max. - Unit µs ns ns ns % ns ns % ns ns µs CCD area image sensor S7010/S7011/S7015 series Parameter Symbol Pulse width Tpwv P1V, P2V, TG Rise and fall time Tprv, Tpfv Pulse width Tpwh P1H, P2H Rise and fall time Tprh, Tpfh Duty ratio Pulse width Tpws SG Rise and fall time Tprs, Tpfs Duty ratio Pulse width Tpwr RG Rise and fall time Tprr, Tpfr TG P1H Overlap time Tovr *14: Symmetrical pulses should be overlapped at 50 % of maximum amplitude. *15: In case of S701 * -0908/-1007. Remark *" *" - Min. 6 *# 200 500 10 500 10 100 5 3 Typ. 50 50 - Max. - Unit µs ns ns ns % ns ns % ns ns µs Area scanning 2: large full well mode INTEGRATION PERIOD (Shutter must be open) Tpwv 1 2 READOUT PERIOD (Shutter must be closed) 4.. 63 64← 60 + 4 (ISOLATION): S701*-0906/-1006 4..127 128←124 + 4 (ISOLATION): S701*-0907/-1007 4..255 256←252 + 4 (ISOLATION): S701*-0908/-1008 3 P1V P2V, TG P1H P2H, SG RG OS Tovr P2V, TG ENLARGED VIEW Tpwh, Tpws P1H P2H, SG Tpwr RG OS D1 D2 D3 S1..S512 D4 D18 D5..D10, S1..S1024, D11..D17 D19 D20: S701*-0906/-0907/-0908 : S701*-1006/-1007/-1008 KMPDC0124EA Parameter Symbol Remark Pulse width Tpwv *$ P1V, P2V, TG Rise and fall time Tprv, Tpfv Pulse width Tpwh *$ P1H, P2H Rise and fall time Tprh, Tpfh Duty ratio Pulse width Tpws SG Rise and fall time Tprs, Tpfs Duty ratio Pulse width Tpwr RG Rise and fall time Tprr, Tpfr TG - P1H Overlap time Tovr *16: Symmetrical pulses should be overlapped at 50 % of maximum amplitude. *17: In case of S701 * -0908/-1007. Min. 6 *% 200 500 10 500 10 100 5 3 Typ. 50 50 - Max. - Unit µs ns ns ns % ns ns % ns ns µs 5 CCD area image sensor S7010/S7011/S7015 series ■ Dimensional outlines (unit: mm) S7010-0906/-0907 b 10.05 ± 0.25 b PHOTOSENSITIVE SURFACE a 1.3 ± 0.3 31.75 ± 0.3 1.3 ± 0.3 10.05 ± 0.25 PHOTOSENSITIVE SURFACE a S7010-1006/-1007 40.64 ± 0.41 1st PIN INDICATION PAD 3.0 3.0 1st PIN INDICATION PAD 0.46 0.46 2.54 2.54 27.94 27.94 KMPDA0053EA KMPDA0054EA S7010-0908 PHOTOSENSITIVE SURFACE a b 14.99 ± 0.25 b 1.3 ± 0.3 1.3 ± 0.3 14.99 ± 0.25 PHOTOSENSITIVE SURFACE a S7010-1008 40.64 ± 0.0.41 32.0 ± 0.3 1st PIN INDICATION PAD 3.0 3.0 1st PIN INDICATION PAD 0.51 2.54 0.51 27.94 2.54 27.94 KMPDA0055EA Type No. S7010-0906 S7010-0907 S7010-0908 S7010-1006 S7010-1007 S7010-1008 6 Active area a b 12.288 (H) 1.440 (V) 12.288 (H) 2.976 (V) 12.288 (H) 6.048 (V) 24.576 (H) 1.440 (V) 24.576 (H) 2.976 (V) 24.576 (H) 6.048 (V) KMPDA0056EA CCD area image sensor S7010/S7011/S7015 series S7011-0906/-0907 S7011-1006/-1007 a a 3.4 ± 0.4 12.0 5.0 14.99 ± 0.25 b 12.0 4.0 14.99 ± 0.25 4.0 c c b 3.4 ± 0.4 5.0 32.0 ± 0.3 40.64 ± 0.41 50.0 58.84 1st PIN INDICATION PAD 1st PIN INDICATION PAD PHOTOSENSITIVE SURFACE PHOTOSENSITIVE SURFACE TE-COOLER 2.54 0.46 2.54 27.94 7.65 ± 0.5 7.65 ± 0.5 TE-COOLER 0.46 27.94 KMPDA0057EB c 7.5 7.1 7.5 7.1 4.0 22.9 22.4 19.0 4.0 2.54 2.54 44.0 34.0 52.0 42.0 60.0 1.0 7.7 7.3 6.7 5.2 TE-COOLER 1.0 TE-COOLER PHOTOSENSITIVE SURFACE 7.7 1st PIN INDICATION PAD PHOTOSENSITIVE SURFACE 5.2 50.0 1st PIN INDICATION PAD 22.9 ACTIVE AREA 24.576 8.2 WINDOW 28.6 ACTIVE AREA 12.288 6.048 WINDOW 16.3 22.4 S7015-1008 6.048 8.2 S7015-0908 7.3 S7011-0906 S7011-0907 S7011-1006 S7011-1007 Active area b 1.440 (V) 2.976 (V) 1.440 (V) 2.976 (V) 6.7 a 12.288 (H) 12.288 (H) 24.576 (H) 24.576 (H) 19.0 Type No. KMPDA0058EB (24×) 0.5 (24×) 0.5 KMPDA0044EC KMPDA0045EB 7 CCD area image sensor ■ Pin connections Pin No. 1 2 3 4 5 6 7 8 Symbol RG RD OS OD OG SG NC NC 9 P2H 10 P1H 11 IG2H 12 IG1H 13 ISH 14 15 16 17 18 19 20 21 P2V P1V TG *18 NC NC NC SS NC 22 ISV 23 IG2V 24 IG1V S7010 series Description Reset gate Reset drain Output transistor source Output transistor drain Output gate Summing gate Symbol CCD horizontal register clock-2 CCD horizontal register clock-1 Test point (horizontal input gate-2) Test point (horizontal input gate-1) Test point (horizontal input source) CCD vertical register clock-2 CCD vertical register clock-1 Transfer gate Substrate (GND) Test point (vertical input source) Test point (vertical input gate-2) Test point (vertical input gate-1) RG RD OS OD OG SG Th1 Th2 P2H P1H IG2H IG1H ISH P2V P1V TG *18 NC PP+ SS NC ISV IG2V IG1V S7010/S7011/S7015 series S7011 series Description Reset gate Reset drain Output transistor source Output transistor drain Output gate Summing gate Thermistor Thermistor CCD horizontal register clock-2 CCD horizontal register clock-1 Test point (horizontal input gate-2) Test point (horizontal input gate-1) Test point (horizontal input source) CCD vertical register clock-2 CCD vertical register clock-1 Transfer gate TE-coolerTE-cooler+ Substrate (GND) Test point (vertical input source) Test point (vertical input gate-2) Test point (vertical input gate-1) Symbol RG RD OS OD OG SG Th1 Th2 P2H P1H IG2H IG1H ISH P2V P1V TG *18 NC PP+ SS NC ISV IG2V IG1V S7015 series Description Reset gate Reset drain Output transistor source Output transistor drain Output gate Summing gate Thermistor Thermistor CCD horizontal register clock-2 CCD horizontal register clock-1 Test point (horizontal input gate-2) Test point (horizontal input gate-1) Test point (horizontal input source) CCD vertical register clock-2 CCD vertical register clock-1 Transfer gate Remark =P2H 0V 0V =RD =P2V TE-coolerTE-cooler+ Substrate (GND) Test point (vertical input source) Test point (vertical input gate-2) Test point (vertical input gate-1) =RD 0V 0V *18 TG: Isolation gate between vertical register and horizontal register. In standard operation, TG should be applied the same pulse as P2V. ■ Specifications of built-in TE-cooler (Typ.) Parameter Symbol Condition S7011-0906/ -0907 2.8 1.5 4.4 S7011-1006/ -1007 6.0 1.5 8.8 S7015-0908 S7015-1008 Unit Internal resistance Rint Ta=25 °C 2.5 1.2 W Maximum current *19 Imax Tc *20=Th *21=25 °C 1.5 3.0 A Maximum voltage Vmax Tc *20=Th *21=25 °C 3.8 3.6 V Maximum heat Qmax 3.4 6.7 3.4 5.1 W absorption *22 Maximum temperature 70 °C of heat radiating side *19: Maximum current Imax: If the current greater than this value flows into the thermoelectric cooler, the heat absorption begins to decrease due to the Joule heat. It should be noted that this value is not the damage threshold value. To protect the thermoelectric cooler and maintain stable operation, the supply current should be less than 60 % of this maximum current. *20: Temperature of the cooling side of thermoelectric cooler. *21: Temperature of the heat radiating side of thermoelectric cooler. *22: Maximum heat absorption Qmax. This is a heat absorption when the maximum current is supplied to the TE-cooler. 8 CCD area image sensor S7010/S7011/S7015 series ■ TE-cooler characteristics S7011-0906/-0907 S7011-1006/-1007 (Typ. Ta=25 ˚C) 10 4 10 8 10 3 0 6 0 2 -10 4 -10 1 -20 2 -20 VOLTAGE vs. CURRENT CCD TEMPERATURE vs. CURRENT 0 0.5 1.0 1.5 VOLTAGE (V) 0 -30 2.0 0 0.5 1.0 1.5 -30 2.0 CURRENT (A) CURRENT (A) KMPDB0176EB KMPDB0177EB S7015-0908 S7015-1008 (Typ. Ta=25 ˚C) 6 10 4 0 3 -10 2 -20 -30 1 -30 -40 2.0 0 4 0 3 -10 2 -20 1 0.5 1.0 1.5 20 5 10 0 30 VOLTAGE vs. CURRENT CCD TEMPERATURE vs. CURRENT 6 20 5 0 (Typ. Ta=25 ˚C) 7 30 VOLTAGE (V) VOLTAGE vs. CURRENT CCD TEMPERATURE vs. CURRENT CCD TEMPERATURE (˚C) 7 0 1 2 3 4 CCD TEMPERATURE (˚C) 0 CCD TEMPERATURE (˚C) VOLTAGE (V) VOLTAGE vs. CURRENT CCD TEMPERATURE vs. CURRENT VOLTAGE (V) 20 20 CCD TEMPERATURE (˚C) (Typ. Ta=25 ˚C) 5 -40 CURRENT (A) CURRENT (A) KMPDB0178EA KMPDB0179EA 9 CCD area image sensor S7010/S7011/S7015 series ■ Specifications of built-in temperature sensor A chip thermistor is built in the same package with a CCD chip, and the CCD chip temperature can be monitored with it. A relation between the thermistor resistance and absolute temperature is expressed by the following equation. RESISTANCE The characteristics of the thermistor used are as follows. R (298K) = 10 kW B (298K / 323K) = 3450 K (Typ. Ta=25 ˚C) 1 MΩ R1 = R2 × expB (1 / T1 - 1 / T2) where R1 is the resistance at absolute temperature T1 (K) R2 is the resistance at absolute temperature T2 (K) B is so-called the B constant (K) 100 kΩ 10 kΩ 220 240 260 280 300 TEMPERATURE (K) KMPDB0111EA ■ Precaution for use (Electrostatic countermeasures) ● Handle these sensors with bare hands or wearing cotton gloves. In addition, wear anti-static clothing or use a wrist band with an earth ring, in order to prevent electrostatic damage due to electrical charges from friction. ● Avoid directly placing these sensors on a work-desk or work-bench that may carry an electrostatic charge. ● Provide ground lines or ground connection with the work-floor, work-desk and work-bench to allow static electricity to discharge. ● Ground the tools used to handle these sensors, such as tweezers and soldering irons. It is not always necessary to provide all the electrostatic measures stated above. Implement these measures according to the amount of damage that occurs. ■ Element cooling/heating temperature incline rate Element cooling/heating temperature incline rate should be set at less than 5 K/min. Multichannel detector head (C7020, C7021, C7025) Features l C7020: for S7010 series C7021: for S7011 series C7025: for S7015 series l Area scanning or full line-binnng operation l Readout frequency: 250 kHz l Readout noise: 20 e-rms l ∆T=50 ˚C (∆T changes by radiation method.) Input Supply voltage Master start Master clock Symbol VD1 VA1+ VA1VA2 VD2 Vp VF fms fmc Value +5 Vdc, 200 mA +15 Vdc, +100 mA -15 Vdc, -100 mA +24 Vdc, 30 mA +5 Vdc, 30 mA (C7021, C7025) +5 Vdc, 2.5 A (C7021, C7025) +12 Vdc, 100 mA (C7021, C7025) HCMOS logic compatible HCMOS logic compatible, 1 MHz Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2003 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, http://www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Cat. No. KMPD1022E09 Feb. 2003 DN 10