PHOTODIODE Si photodiode S7686 Photodiode with sensitivity close to spectral luminous efficiency S7686 is a Si photodiode having a spectral response characteristic that is more similar to the human eye sensitivity (spectral luminous efficiency) than our conventional visible-compensated sensors (S1133, etc.). Features Applications l Spectral response analogous to CIE spectral luminous efficiency Spectral response range: 480 to 660 nm Peak sensitivity wavelength: 550 nm l Ceramic package for reliability l Active area: 2.4 × 2.8 mm l High-speed response: 0.5 µs (VR=0 V, RL=1 kΩ) l fs value: 8 % Typ. (vertical light input) l Illuminometer l Luminance meter ■ Absolute maximum ratings (Ta=25 °C) Parameter Reverse voltage Operating temperature Storage temperature Symbol VR Max. Topr Tstg Value 10 -10 to +60 -20 to +70 Unit V °C °C ■ Electrical and optical characteristics (Ta=25 °C) Parameter Spectral response range Peak sensitivity wavelength Photo sensitivity Short circuit current Dark current Rise time Terminal capacitance Symbol λ λp S Isc ID tr Ct Condition λ=λp 100 lx, 2856 K VR=1 V VR=0 V, RL=1 kΩ VR=0 V, f=10 kHz Min. - Typ. 480 to 660 550 0.38 0.45 2 0.5 200 Max. 20 - Unit nm nm A/W µA pA µs pF 1 S7686 Si photodiode ■ Spectral response ■ Spectral response (relative value) (Typ. Ta=25 ˚C) 0.6 (Typ. Ta=25 ˚C) 100 S7686 90 RELATIVE SENSITIVITY (%) PHOTO SENSITIVITY (A/W) QE=100 % 0.5 0.4 0.3 0.2 0.1 80 70 60 50 40 30 CIE LUMINOUS SPECTRAL EFFICIENCY 20 10 0 200 400 600 800 1000 0 300 1200 WAVELENGTH (nm) 400 500 600 700 800 900 WAVELENGTH (nm) KSPDB0133EB ■ Dark current vs. reverse voltage ■ Terminal capacitance vs. reverse voltage (Typ. Ta=25 ˚C) 1 nA (Typ. Ta=25 ˚C) 10 nF TERMINAL CAPACITANCE 100 pA DARK CURRENT KSPDB0092EB 10 pA 1 pA 100 fA 10 fA 0.01 0.1 1 10 1 nF 100 pF 10 pF 0.1 REVERSE VOLTAGE (V) 1 10 REVERSE VOLTAGE (V) KSPDB0144EA KSPDB0145EA ■ Dimensional outline (unit: mm, tolerance unless otherwise noted: ±0.15) CATHODE TERMINAL MARK +0 8.0 - 0.25 FILTER 9±1 0.6 0.1 PHOTOSENSITIVE SURFACE 1.5 ± 0.2 6.0 - 0.3 +0.1 ACTIVE AREA 2.8 × 2.4 0.45 LEAD 5.0 ± 0.2 KSPDA0089EA Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2002 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, http://www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 2 Cat. No. KSPD1040E02 Oct. 2002 DN