APD Si APD array S8550 4 × 8 element APD array with low noise and enhanced short-wavelength sensitivity S8550 is an APD (avalanche photodiode) array designed for short wavelength detection, featuring low noise and low terminal capacitance. S8550 also offers uniform gain and small cross-talk between each element. Features Applications l High sensitivity and low noise in short wavelength region l Low terminal capacitance l Optimized for blue light detection l Uniform gain and low cross-talk variation between l Low-light-level photometry in the visible range l Detector systems combined with scintillator each element ■ General ratings Parameter Element size Element pitch Package Window material Rating 1.6 × 1.6 (× 32 elements) 2.3 Ceramic Epoxy resin Unit mm mm - ■ Absolute maximum ratings Parameter Operating temperature Storage temperature Symbol Topr Tstg Value -20 to +60 -20 to +80 Unit °C °C ■ Electrical and optical characteristics (Ta=25 °C) Parameter Spectral response range Peak sensitivity wavelength Quantum efficiency Breakdown voltage Dark current Terminal capacitance Gain Symbol Condition λ M=50 λp QE λ=420 nm VBR ID per 1 element, M=50 per 1 element, M=50, Ct f=10 kHz M Min. 60 - Typ. 320 to 1000 600 70 400 10 Max. 500 50 Unit nm nm % V nA - 10 - pF - 50 - - 1 Si APD array ■ Quantum efficiency vs. wavelength (Typ. Ta=25 ˚C, λ=420 nm) 1000 80 100 60 GAIN QUANTUM EFFICIENCY (%) ■ Gain vs. reverse voltage (Typ. Ta=25 ˚C) 100 S8550 40 10 20 0 200 400 600 800 1000 1 1200 0 100 WAVELENGTH (nm) 200 300 400 REVERSE VOLTAGE (V) KAPDB0059EA KAPDB0063EA ■ Dimensional outline (unit: mm) 19.50 15.24 ARRAY 2 1.27 0.9 A2 B2 C2 D2 E2 F2 G2 H2 c b a A1 B1 C1 D1 E1 F1 G1 H1 PHOTOSENSITIVE SURFACE ARRAY 1 13 12 11 10 9 8 7 6 5 4 3 2 1 INDEX MARK 2.6 1.00 (0.5) ACTIVE AREA 1.6 × 1.6 (ANODE) 7.62 A3 B3 C3 D3 E3 F3 G3 H3 1.27 f e d A4 B4 C4 D4 E4 F4 G4 H4 11.20 2.30 2.60 2.30 0.45 2.30 1.27 15.24 Pin No. Element No. Pin No. Element No. Pin No. Element No. Pin No. Element No. 1a CATHODE 1 6b D1 3d C3 1f A4 B1 3a 8b E1 11d G3 3f B4 C2 5a 10b F1 13d H4 5f D3 D2 7a 12b G2 2e B3 7f E3 E2 9a 1c A1 4e C4 9f F3 G1 11a 3c B2 6e D4 11f G4 H1 13a 11c F2 8e E4 13f CATHODE 2 A2 2b 13c H2 10e F4 C1 4b 1d A3 12e H3 CATHODE 1: CATHODE OF ARRAY 1 CATHODE 2: CATHODE OF ARRAY 2 KAPDA0023EB Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2006 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 2 Cat. No. KAPD1009E02 Jun. 2006 DN