HAMAMATSU S8984

IMAGE SENSOR
CCD area image sensor
S8984, S8985-02
Front-illuminated FFT-CCDs for X-ray imaging
S8984 is an FFT-CCD image sensor ideal for intra-oral X-ray imaging in dental diagnosis. S8984 has about 2 mega (1700 × 1200) pixels each of
which is 20 × 20 µm. The fiber optic plate (FOP) used as an input window is as thin as 1.5 mm but highly resistant to X-ray irradiation, making
S8984 very reliable even over a long-term operation. The scintillator coated on the FOP is optimized to have high X-ray sensitivity and high
resolution (20 Lp/mm).
S8985-02 is an easy-to-use X-ray imaging module using S8984, with added functions such as a cable assembly and X-ray trigger circuit. S898502 is pin compatible with S8981-02 (number of pixels is increased). S8985-02 is advanced type of S8985 and adapted both AC and DC X-ray
sources.
Features
Applications
l Sensor has X-ray monitoring photodiode
l Compactness
5.1 mm thickness excluding I/O connector part
l High dynamic range: 12 bit
l Long-term stability
l General X-ray imaging
l Non-destructive inspection
l Intra-oral X-ray imaging in dental diagnosis
For use under 100,000 shots
(60 kVp, 30 mR X-ray irradiation)
l Resolution: 20 Lp/mm
l 1700 (H) × 1200 (V) pixel format
l Pixel size: 20 × 20 µm
l Coupled with FOS for X-ray imaging
l 100 % fill factor
l Low dark signal
l Low readout noise
l MPP operation
l AC/DC X-ray source adapted
■ Selection guide
Type No.
S8984
S8985-02
Cooling
Number of
total pixels
Number of
active pixels
Active area
[mm (H) × mm (V)]
Non-cooled
1708 × 1202
1700 × 1200
34 × 24
■ General ratings
Parameter
CCD structure
Fill factor
Number of active pixels
Pixel size
Active area
Vertical clock phase
Horizontal clock phase
Output circuit
Dimensional outline
Reliability
Window
Other
S8984
S8985-02
Full frame transfer
100 %
1700 (H) × 1200 (V)
20 (H) × 20 (V) µm
34 (H) × 24 (V) mm
2 phase
2 phase
Emitter follower without load resistance
39.5 (H) × 27.5 (V) mm
42.6 (H) × 30.6 (V) mm
100,000 shots at 60 kVp, 30 m Roentgen
Scintillator on 1.5 mm FOP
MPP mode (low dark current operation), module (S8985-02)
1
CCD area image sensor
S8984, S8985-02
■ Absolute maximum ratings (Ta=25 °C)
Parameter
Storage temperature
Operating temperature
OD voltage
RD voltage
SG voltage
OG voltage
RG voltage
TG voltage
Vertical clock voltage
Horizontal clock voltage
Vcc voltage
Symbol
Tstg
Topr
VOD
VRD
VSG
VOG
VRG
VTG
VP1V, VP2V
VP1H, VP2H
Vcc
Min.
-20
0
-0.5
-0.5
-15
-15
-15
-15
-15
-15
0
Typ.
-
Max.
+70
+40
+20
+18
+15
+15
+15
+15
+15
+15
+7
Unit
°C
°C
V
V
V
V
V
V
V
V
V
Min.
12
12
-0.5
0
-9
0
-9
0
-9
0
-9
0
-9
4.75
Typ.
15
13
2
0
3
-8
3
-8
3
-8
3
-8
3
-8
5
Max.
14
5
6
-7
6
-7
6
-7
6
-7
6
-7
5.25
Unit
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
■ Operating conditions (MPP mode, Ta=25 °C)
Parameter
Output transistor drain voltage
Reset drain voltage
Output gate voltage
Substrate voltage
Vertical shift register
clock voltage
Horizontal shift register
clock voltage
Summing gate voltage
Reset gate voltage
Transfer gate voltage
High
Low
High
Low
High
Low
High
Low
High
Low
+5 V power supply voltage
Symbol
VOD
VRD
VOG
Vss
VP1VH, VP2VH
VP1VL, VP2VL
VP1HH, VP2HH
VP1HL, VP2HL
VsGH
VsGL
VRGH
VRGL
VTGH
VTGL
Vcc
■ Electrical characteristics (Ta=25 °C)
Parameter
Symbol
Remark
Min.
Typ.
Max.
Signal output frequency
fc
*1
1
5
Vertical shift register capacitance
CP1v, CP2v
70,000
S8984
400
Horizontal shift
CP1H, CP2H
register capacitance
600
S8985-02
S8984
20
Summing gate capacitance
CsG
S8985-02
220
S8984
20
Reset gate capacitance
CRG
S8985-02
220
S8984
250
Transfer gate capacitance
CTG
S8985-02
450
Charge transfer efficiency
CTE
*2
0.99995
0.99998
DC output level
VOut
*3
5
8
11
Output impedance
Zo
*3
500
Power dissipation
P
*3 *4
75
S8984
1
+5 V power supply current
Icc
S8985-02
2
*1: S8984 only. In case of S8985-02, maximum frequency is strongly depend on peripheral circuit and cable length.
*2: Measured at half of the full well capacity. CTE is defined per pixel.
*3: VOD=15 V
*4: Power dissipation of the on-chip amplifier.
2
Unit
MHz
pF
pF
pF
pF
pF
V
Ω
mW
mA
CCD area image sensor
S8984, S8985-02
■ Electrical and optical characteristics (Ta=25 °C, unless otherwise noted, VOD=15 V)
Parameter
Symbol
Remark
Min.
Typ.
Max.
Vertical
100
200
Full well capacity
Horizontal
Fw
300
Summing
600
CCD node sensitivity
Sv
*5
1.0
1.4
Dark current (MPP mode)
DS
*6
250
2,500
Readout noise
Nr
*7
60
Dynamic range
DR
*8
3,333
X-ray response non-uniformity
XRNU
*9, *10
±10
±30
White spots
20
Point
defects *12 Black spots
20
11
Blemish *
Cluster defects
*13
3
Column defects
*14
1
X-ray resolution
*9
15
20
∆R
*5: VOD=15 V, RL(load resistance of emitter follower)=1 kΩ.
*6: Dark signal doubles for every 5 to 7 °C.
*7: -40 °C, operating frequency is 1 MHz.
*8: Dynamic range = Full well capacity / Readout noise
*9: X-ray irradiation of 60 kVp, measured at half of the full well capacity.
*10: XRNU (%) = Noise / Signal × 100
Noise: Fixed pattern noise (peak to peak)
In the range that excludes 5 pixels from edges to the center at every position.
*11: Refer to “Characteristics and use of FFT-CCD area image sensor” of technical information.
*12: White spots > 10 times of Max. Dark signal (2500 e-/pixel/s).
Black spots > 50 % reduction in response relative to adjacent pixels, measured at half of the full well capacity.
*13: continuous 2 to 9 point defects.
*14: continuous > 10 point defects.
Unit
keµV/ee /pixel/s
e-rms
%
-
Lp/mm
......
......
S1699
1696
1697
S1700
1698
S1701
S1702
1699
1700
S1703
S1704
D3
VS1 VS2 VS3 VS4
D4
RD
1 2 3 ...... 1198 1199 1200
2
3
OS
OD
D1
D2
S1
S2
S3
S4
S5
S6
P1V’
P2V’
TG’
SS
VS1199 VS1201
VS1200 VS1202
■ Device structure
RG’
OG
SG’
P1H’
P2H’
X-RAY IRRADIATION
MONITORING PHOTODIODE
PD
KMPDC0220EA
■ Pixel format
←
Blank
2
Optical
black
2
Left
Horizontal Direction
→
Right
Isolation
Effective
Isolation
1
1700
1
Optical
black
0
Blank
2
Top ← Vertical direction → Bottom
Isolation
Effective
Isolation
1
1200
1
3
CCD area image sensor
S8984, S8985-02
■ On-board circuit
OD
51 k
2.2 µ
7.5 k
OD
P1V’
10
P1V
0.1 µ
OG
10
P2V
P2V’
RD
RD
10
TG
TG’
2.2 µ
molex 52745-1417
CCD CHIP
P1H’
10
P1H
Vcc
Trigger A
SG
P2H
P1H
Reserve
RG
RD
OD
OUT
GND
TG
P2V
P1V
10
P2H
OS
P2H’
10
SG
Vcc
SG’
100
RG
10 k
OUT
Trigger B
(S8985-02)
PD
RG’
SS
Trigger A
(S8984)
GND
1
2
3
4
5
6
7
8
9
10
11
12
13
14
KMPDC0216EB
■ Timing chart
PRE-INTEGRATION PERIOD
INTEGRATION PERIOD
READOUT PERIOD
AC X-RAY EXPOSURE (Trigger A) *15
DC X-RAY EXPOSURE (Trigger A) *15
Trigger B (S8985-02) *16
Tpwv
VD: VERTICAL DUMMY
P1V
VD1
1
2, 3, ... , 1199, 1200, VD2
17
P2V, TG *
P1H
P2H, SG
RG
OUT
Tovr
P2V, TG
ENLARGED VIEW
Tpwh, Tpws
P1H
P2H, SG
Tpwr
RG
S2, S3, S4, ... , S1702, S1703, S1704
OUT
D1
D2
S1
*15: Trigger A (S8984) is the same as AC/DC X-ray exposure form.
*16: Low active trigger pulse
*17: TG terminal can be short-circuited to P2V terminal.
D3
D4
KMPDC0217EA
Parameter
Symbol
Remark
Pulse width
tpwv
*18
P1V, P2V, TG
Rise and fall time
tprv, tpfv
Pulse width
tpwh
P1H, P2H
Rise and fall time
tprh, tpfh
*18
Duty ratio
Pulse width
tpws
SG
Rise and fall time
tprs, tpfs
Duty ratio
Pulse width
tpwr
RG
Rise and fall time
tprr, tpfr
TG-P1H
Overlap time
tovr
*18: Symmetrical pulses should be overlapped at 50 % of maximum amplitude.
4
Min.
30
200
100
5
100
3
10
3
18
KMPDC0217EA
Typ.
60
500
50
500
50
50
36
Max.
-
Unit
µs
ns
ns
ns
%
ns
ns
%
ns
ns
µs
CCD area image sensor
S8984, S8985-02
■ Dimensional outlines (unit: mm)
S8984
39.5 ± 0.5
1.0
3.6
34.0
1.9
ACTIVE AREA
SCINTILLATOR
27.5 ± 0.4
FOP
26.4
→ 14
24.0
CONNECTOR
0.55
6.55
1
molex
52745-1417
0.55
FOP
35.5
24
C1.0
3.0
26.5
FOP
ALUMINA SUBSTRATE
FOP
1.5
Cu-W (0.5 t)
2.0
1.0
1.5
3.1 ± 0.3
CCD CHIP
KMPDA0175EB
■ Pin connections (Connector on CCD package)
Pin No.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
Symbol
Vcc
Trigger A
SG
P2H
P1H
Reserve
RG
RD
OD
OUT
GND
TG
P2V
P1V
Description
Analog power +5 V
Trigger A output
Summing gate
CCD horizontal register clock-2
CCD horizontal register clock-1
Remark
Should be opened
Reset gate
Reset drain
Output transistor drain
Signal output
Ground
Transfer gate
CCD vertical register clock-2
CCD vertical register clock-1
5
CCD area image sensor
S8984, S8985-02
■ Dimensional outlines (unit: mm)
S8985-02
● Entire view
MDR CONNECTOR
(3M 10136-3000PE; 36 TERMINALS)
CCD SENSOR
FERRITE
CABLE
2000
PIN No.1 2
17 18
19 20
35 36
SHROUD
KMPDA0189EA
* The shield of cable and the shroud of MDR connector are electrically connected each other.
They are short-circuited, so there is no electrical contact to any other positions.
● CCD sensor
42.6
13.05
10.2
29.55
7.4
10.55
4.0
3.5
9.0
3.5
24.0
30.6
3.3
5.1
3.3
CABLE
(4 ×) R2.5
3.45
34.0
5.15
6.0
1.3
ACTIVE AREA
1.0
(30˚)
6
1.3
5.0
8.9
R2.0 R2.0
5.1 2.3
1.5
4.0
KMPDA0192EA
KMPDA0192EA
CCD area image sensor
S8984, S8985-02
■ Pin connections
Pin No.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
Symbol
GND
Vcc
SG
Trigger B
RG
NC
Description
Ground
+5 V power supply
Summing gate
Trigger B output
Reset gate
Remark
Same timing as P2H
Should be opened
NC
RD
NC
OD
NC
OUT
NC
GND
NC
P1V
Reserve
Reserve
P2H
NC
P1H
NC
GND
NC
RD
NC
OD
NC
GND
NC
OUT
NC
P2V
NC
TG
Reset drain
Output transistor drain
Sensor output
Ground
CCD vertical register clock-1
Should be opened
Should be opened
CCD horizontal register clock-2
CCD horizontal register clock-1
Ground
Reset drain
Output transistor drain
Ground
Sensor output
CCD vertical register clock-2
Transfer gate
Same timing as P2V
■ Precautions for use (Electrostatic countermeasures)
*Handle these sensors with bare hands or wearing cotton gloves. In addition, wear anti-static clothing or use a wrist band with
an earth ring, in order to prevent electrostatic damage due to electrical charges from friction.
*Avoid directly placing these sensors on a work-desk or work-bench that may carry an electrostatic charge.
*Provide ground lines or ground connection with the work-floor, work-desk and work-bench to allow static electricity to discharge.
*Ground the tools used to handle these sensors, such as tweezers and soldering irons.
It is not always necessary to provide all the electrostatic measures stated above. Implement these measures according to
the amount of damage that occurs.
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2006 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Cat. No. KMPD1085E02
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Sept. 2006 DN
7