IMAGE SENSOR CCD area image sensor S8986, S10128 Front-illuminated FFT-CCDs for X-ray imaging S8986 is an FFT-CCD image sensor ideal for intra-oral X-ray imaging in dental diagnosis. S8986 has about 2 mega (1700 × 1200) pixels each of which is 20 × 20 µm. S8986 delivers low dark current when operated in MPP (Multi Pinned-Phase) mode. S10128 is an easy-to-use X-ray imaging module using S8986, with added functions such as a cable assembly and X-ray trigger circuit. S10128 is pin compatible with S10127 (number of pixels is increased). S10128 is low cost type for S8985-02 and adapted both AC and DC X-ray sources. Features Applications l Sensor has X-ray monitoring photodiode l Compactness 5.1 mm thickness excluding I/O connector part l High dynamic range: 12 bit l Long-term stability l General X-ray imaging l Non-destructive inspection l Intra-oral X-ray imaging in dental diagnosis For use under 100,000 shots (60 kVp, 30 mR X-ray irradiation) l Resolution: 10 Lp/mm l 1700 (H) × 1200 (V) pixel format l Pixel size: 20 × 20 µm l Coupled with GOS for X-ray imaging l 100 % fill factor l Low dark signal l Low readout noise l MPP operation l AC/DC X-ray source adapted ■ Selection guide Type No. S8986 S10128 Cooling Number of total pixels Number of active pixels Active area [mm (H) × mm (V)] Non-cooled 1708 × 1202 1700 × 1200 34 × 24 ■ General ratings Parameter CCD structure Fill factor Number of active pixels Pixel size Active area Vertical clock phase Horizontal clock phase Output circuit Dimensional outline Reliability Window Other S8986 S10128 Full frame transfer 100 % 1700 (H) × 1200 (V) 20 (H) × 20 (V) µm 34 (H) × 24 (V) mm 2 phase 2 phase Emitter follower without load resistance 39.5 (H) × 27.5 (V) mm 42.6 (H) × 30.6 (V) mm 100,000 shots at 60 kVp, 30 m Roentgen GOS film MPP mode (low dark current operation), module (S10128) 1 CCD area image sensor S8986, S10128 ■ Absolute maximum ratings (Ta=25 °C) Parameter Storage temperature Operating temperature OD voltage RD voltage SG voltage OG voltage RG voltage TG voltage Vertical clock voltage Horizontal clock voltage Vcc voltage Symbol Tstg Topr VOD VRD VSG VOG VRG VTG VP1V, VP2V VP1H, VP2H Vcc Min. -20 0 -0.5 -0.5 -15 -15 -15 -15 -15 -15 0 Typ. - Max. +70 +40 +20 +18 +15 +15 +15 +15 +15 +15 +7 Unit °C °C V V V V V V V V V Min. 12 12 -0.5 0 -9 0 -9 0 -9 0 -9 0 -9 4.75 Typ. 15 13 2 0 3 -8 3 -8 3 -8 3 -8 3 -8 5 Max. 14 5 6 -7 6 -7 6 -7 6 -7 6 -7 5.25 Unit V V V V V V V V V V V V V V V ■ Operating conditions (MPP mode, Ta=25 °C) Parameter Output transistor drain voltage Reset drain voltage Output gate voltage Substrate voltage Vertical shift register clock voltage Horizontal shift register clock voltage Summing gate voltage Reset gate voltage Transfer gate voltage High Low High Low High Low High Low High Low +5 V power supply voltage Symbol VOD VRD VOG Vss VP1VH, VP2VH VP1VL, VP2VL VP1HH, VP2HH VP1HL, VP2HL VsGH VsGL VRGH VRGL VTGH VTGL Vcc ■ Electrical characteristics (Ta=25 °C) Parameter Symbol Remark Min. Typ. Max. Signal output frequency fc *1 1 5 Vertical shift register capacitance CP1v, CP2v 70,000 S8986 400 Horizontal shift CP1H, CP2H register capacitance 600 S10128 S8986 20 Summing gate capacitance CsG S10128 220 S8986 20 Reset gate capacitance CRG S10128 220 S8986 250 Transfer gate capacitance CTG S10128 450 Charge transfer efficiency CTE *2 0.99995 0.99998 DC output level VOut *3 5 8 11 Output impedance Zo *3 500 Power dissipation P *3 *4 75 S8986 1 +5 V power supply current Icc S10128 2 *1: S8986 only. In case of S10128, maximum frequency is strongly depend on peripheral circuit and cable length. *2: Measured at half of the full well capacity. CTE is defined per pixel. *3: VOD=15 V *4: Power dissipation of the on-chip amplifier. 2 Unit MHz pF pF pF pF pF V Ω mW mA CCD area image sensor S8986, S10128 ■ Electrical and optical characteristics (Ta=25 °C, unless otherwise noted, VOD=15 V) Parameter Symbol Remark Min. Typ. Max. Vertical 100 200 Full well capacity Horizontal Fw 300 Summing 600 CCD node sensitivity Sv *5 1.0 1.4 Dark current (MPP mode) DS *6 250 2,500 Readout noise Nr *7 60 Dynamic range DR *8 3,333 X-ray response non-uniformity XRNU *9, *10 ±10 ±30 White spots 20 Point defects *12 Black spots 20 11 Blemish * Cluster defects *13 3 Column defects *14 1 X-ray resolution *9 8 10 ∆R *5: VOD=15 V, RL(load resistance of emitter follower)=1 kΩ. *6: Dark signal doubles for every 5 to 7 °C. *7: -40 °C, operating frequency is 1 MHz. *8: Dynamic range = Full well capacity / Readout noise *9: X-ray irradiation of 60 kVp, measured at half of the full well capacity. *10: XRNU (%) = Noise / Signal × 100 Noise: Fixed pattern noise (peak to peak) In the range that excludes 5 pixels from edges to the center at every position. *11: Refer to “Characteristics and use of FFT-CCD area image sensor” of technical information. *12: White spots > 10 times of Max. Dark signal (2500 e-/pixel/s). Black spots > 50 % reduction in response relative to adjacent pixels, measured at half of the full well capacity. *13: continuous 2 to 9 point defects. *14: continuous > 10 point defects. Unit keµV/ee /pixel/s e-rms % - Lp/mm ...... ...... S1699 1696 1697 S1700 1698 S1701 S1702 1699 1700 S1703 S1704 D3 VS1 VS2 VS3 VS4 D4 RD 1 2 3 ...... 1198 1199 1200 2 3 OS OD D1 D2 S1 S2 S3 S4 S5 S6 P1V’ P2V’ TG’ SS VS1199 VS1201 VS1200 VS1202 ■ Device structure RG’ OG SG’ P1H’ P2H’ X-RAY IRRADIATION MONITORING PHOTODIODE PD KMPDC0220EA ■ Pixel format ← Blank 2 Optical black 2 Left Horizontal Direction → Right Isolation Effective Isolation 1 1700 1 Optical black 0 Blank 2 Top ← Vertical direction → Bottom Isolation Effective Isolation 1 1200 1 3 CCD area image sensor S8986, S10128 ■ On-board circuit OD 51 k 2.2 µ 7.5 k OD P1V’ 10 P1V 0.1 µ OG 10 P2V P2V’ RD RD 10 TG TG’ 2.2 µ molex 52745-1417 CCD CHIP P1H’ 10 P1H Vcc Trigger A SG P2H P1H Reserve RG RD OD OUT GND TG P2V P1V 10 P2H OS P2H’ 10 SG Vcc SG’ 100 RG 10 k OUT Trigger B (S10128) PD RG’ SS Trigger A (S8986) GND 1 2 3 4 5 6 7 8 9 10 11 12 13 14 KMPDC0218EC ■ Timing chart PRE-INTEGRATION PERIOD INTEGRATION PERIOD READOUT PERIOD AC X-RAY EXPOSURE (Trigger A) *15 DC X-RAY EXPOSURE (Trigger A) *15 Trigger B (S10128) *16 Tpwv VD: VERTICAL DUMMY P1V VD1 1 2, 3, ... , 1199, 1200, VD2 17 P2V, TG * P1H P2H, SG RG OUT Tovr P2V, TG ENLARGED VIEW Tpwh, Tpws P1H P2H, SG Tpwr RG S2, S3, S4, ... , S1702, S1703, S1704 OUT D1 D2 S1 *15: Trigger A (S8986) is the same as AC/DC X-ray exposure form. *16: Low active trigger pulse *17: TG terminal can be short-circuited to P2V terminal. D3 D4 KMPDC0219EB Parameter Symbol Remark Pulse width tpwv *18 P1V, P2V, TG Rise and fall time tprv, tpfv Pulse width tpwh P1H, P2H Rise and fall time tprh, tpfh *18 Duty ratio Pulse width tpws SG Rise and fall time tprs, tpfs Duty ratio Pulse width tpwr RG Rise and fall time tprr, tpfr TG-P1H Overlap time tovr *18: Symmetrical pulses should be overlapped at 50 % of maximum amplitude. 4 Min. 30 200 100 5 100 3 10 3 18 KMPDC0219EB Typ. 60 500 50 500 50 50 36 Max. - Unit µs ns ns ns % ns ns % ns ns µs CCD area image sensor S8986, S10128 ■ Dimensional outlines (unit: mm) S8986 39.5 ± 0.5 1.0 3.6 34.0 1.9 27.5 ± 0.4 0.55 GOS FILM ALUMINA SUBSTRATE CCD CHIP Cu-W (0.5 t) 2.0 1.0 1.5 GOS FILM 26.4 24.0 → 14 1 CONNECTOR 26.5 1.8 ± 0.3 ACTIVE AREA 0.55 GOS FILM 35.5 molex 52745-1417 6.55 24 C1.0 3.0 KMPDA0188EA ■ Pin connections (Connector on CCD package) Pin No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 Symbol Vcc Trigger A SG P2H P1H Reserve RG RD OD OUT GND TG P2V P1V Description Analog power +5 V Trigger A output Summing gate CCD horizontal register clock-2 CCD horizontal register clock-1 Remark Should be opened Reset gate Reset drain Output transistor drain Signal output Ground Transfer gate CCD vertical register clock-2 CCD vertical register clock-1 5 CCD area image sensor S8986, S10128 ■ Dimensional outlines (unit: mm) S10128 ● Entire view MDR CONNECTOR (3M 10136-3000PE; 36 TERMINALS) CCD SENSOR FERRITE CABLE 2000 PIN No.1 2 17 18 19 20 35 36 SHROUD KMPDA0189EA * The shield of cable and the shroud of MDR connector are electrically connected each other. They are short-circuited, so there is no electrical contact to any other positions. ● CCD sensor 42.6 13.05 10.2 29.55 7.4 10.55 4.0 3.5 9.0 3.5 24.0 30.6 3.3 5.1 3.3 CABLE (4 ×) R2.5 3.45 34.0 5.15 6.0 1.3 ACTIVE AREA 1.0 (30˚) 6 1.3 5.0 8.9 R2.0 R2.0 5.1 2.3 1.5 4.0 KMPDA0192EA KMPDA0192EA CCD area image sensor S8986, S10128 ■ Pin connections Pin No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 Symbol GND Vcc SG Trigger B RG NC Reserve NC RD NC OD NC OUT NC GND NC P1V Reserve Reserve P2H NC P1H NC GND NC RD NC OD NC GND NC OUT NC P2V NC TG Description Ground +5 V power supply Summing gate Trigger B output Reset gate Remark Same timing as P2H Should be opened Reset drain Output transistor drain Sensor output Ground CCD vertical register clock-1 Should be opened Should be opened CCD horizontal register clock-2 CCD horizontal register clock-1 Ground Reset drain Output transistor drain Ground Sensor output CCD vertical register clock-2 Transfer gate Same timing as P2V ■ Precautions for use (Electrostatic countermeasures) *Handle these sensors with bare hands or wearing cotton gloves. In addition, wear anti-static clothing or use a wrist band with an earth ring, in order to prevent electrostatic damage due to electrical charges from friction. *Avoid directly placing these sensors on a work-desk or work-bench that may carry an electrostatic charge. *Provide ground lines or ground connection with the work-floor, work-desk and work-bench to allow static electricity to discharge. *Ground the tools used to handle these sensors, such as tweezers and soldering irons. It is not always necessary to provide all the electrostatic measures stated above. Implement these measures according to the amount of damage that occurs. Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2006 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Cat. No. KMPD1086E03 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Sept. 2006 DN 7