PHOTODIODE Si photodiode with preamp S9269, S9270 Photodiode and preamp integrated with feedback resistance and capacitance S9269 and S9270 are low-noise photosensors consisting of a Si photodiode, op amp, and feedback resistance and capacitance, all integrated into a ceramic package with a surface size equal to our standard ceramic packages. These photosensors are ideal for a wide range of photometric applications including analytical equipment and measurement equipment. The active area of the photodiode is internally connected to the GND terminal making it highly resistant to EMC noise. Combinations with various photodiodes such as UV sensitivity enhanced type, IR sensitivity suppressed type and IR sensitivity enhanced type are also available. (Custom order products) Features Applications l Precision photometry l General-purpose optical measurement l Si photodiode for visible to near IR Si precision photometry l Small package t S9269: 10.1 × 8.9 × 40 mm S9270: 16.5 × 15.0 × 4.15 t mm l Active area S9269: 5.8 × 5.8 mm S9270: 10 × 10 mm l FET input operational amplifier with low power dissipation l Built-in Rf=1 GΩ, Cf=5 pF l Low noise and NEP ■ Absolute maximum ratings (Ta=25 °C) Parameter Supply voltage (op amp) Power dissipation Operating temperature Storage temperature Symbol Vcc P Topr Tstg Value ±20 500 -20 to +60 -20 to +80 Unit V mW °C °C ■ Electrical and optical characteristics (Ta=25 °C, Vcc=±15 V, RL=1 MΩ) Parameter Symbol Condition Min. Spectral response range λ - Peak sensitivity wavelength F e e d back resistance (built-in) * F e e d back cap acitance (built-in) * Photo sensitivity λp Rf Cf S 0.5 - λ=λp Dark state, f=10 Hz Output noise voltage Vn Dark state, f=20 Hz λ=λp, f=10 Hz Noise equivalent power NEP λ=λp, f=20 Hz Output offset voltage Vos Dark state Cut-off frequency fc -3 dB Output voltage swing Vo RL=10 kΩ Supply current Icc Dark state * Custom devices available with different Rf, Cf, etc. S9269 Typ. 320 to 1100 960 1 5 0.62 7.3 6.5 12 12 ±4 32 13 0.3 Max. Min. - - 0.6 0.5 - S9270 Typ. 320 to 1100 960 1 5 0.62 9.7 9.1 16 17 ±4 32 13 0.3 Max. Unit - nm 0.6 nm GΩ pF V/nW µVrms/Hz1/2 fW/Hz1/2 mV Hz V mA 1 Si photodioe with preamp ■ Spectral response S9269, S9270 ■ Frequency response (Typ. Ta=25 ˚C, Vcc=±15 V) 0.7 (Typ. Ta=25 ˚C, Vcc=±15 V) 10 RELATIVE OUTPUT (dB) PHOTO SENSITIVITY (V/nW) 0.6 0.5 0.4 0.3 0.2 0 -10 -20 0.1 0 200 400 600 800 1000 -30 0.001 1200 0.01 0.1 1 10 FREQUENCY (kHz) WAVELENGTH (nm) KSPDB0239EA KSPDB0240EA ■ NEP vs. frequency ■ Output noise voltage vs. frequency (Typ. Ta=25 ˚C, Vcc=±15 V) 4 10 NEP (fW/Hz1/2) S9270 103 2 10 S9269 101 0.01 0.1 1 10 100 0.1 0.01 0.1 1 10 100 1000 KSPDB0242EA ■ Application circuit example V+ PKG Rf=1 GΩ Cf=5 pF - O + VKSPDC0050EA 2 S9269 1 FREQUENCY (kHz) KSPDB0241EA G S9270 10 0.01 0.001 1000 FREQUENCY (kHz) PHOTODIODE (Typ. Ta=25 ˚C, Vcc=±15 V) 100 OUTPUT NOISE VOLTAGE (µVrms/Hz1/2) 5 10 100 0.001 100 Si photodioe with preamp S9269, S9270 ■ Dimensional outlines (unit: mm, tolerance unless otherwise noted: ±0.2) ➁ S9270 10.1 ± 0.1 (CERAMIC) 16.5 ± 0.2 (CERAMIC) Y Y 8.9 ± 0.1 (CERAMIC) X PHOTOSENSITIVE SURFACE PHOTOSENSITIVE SURFACE SOLDER 0.9 13.8 GND VccOUT Vcc+ 5.08 ± 0.1 12.7 14.8 (PWB) 1.5 7.4 ± 0.1 1.8 2.54 ± 0.1 5.7 (4 ×) 0.45 Cu-Zn ALLOY (4 ×)( 1.0) Active area position accuracy versus package center -0.165 ≤ X ≤ +0.335 -0.25 ≤ Y ≤ +0.25 8.0 8.8 (PWB) 4.0 7.62 2.54 ± 0.1 SOLDER 1.0 MAX. 1.7 PWB (2.0) (5.0) (2.0) 1.7 (4 ×)( 1.0) 1.0 MAX. CERAMIC (4 ×) 0.45 Cu-Zn ALLOY 2.15 ± 0.1 PWB 12.5 2.0 ± 0.1 0.75 CERAMIC ACTIVE AREA (10 × 10) (5.0) X 10.0 (PWB) 2.75 10.8 2.25 12.5 ± 0.2 0.5 16.3 (PWB) 5.08 ± 0.1 ACTIVE AREA (5.83 × 5.83) 15.0 ± 0.15 (CERAMIC) ➀ S9269 Active area position accuracy versus package center -0.3 ≤ X, Y ≤ +0.3 GND VccOUT Vcc+ KSPDA0160EA KSPDA0161EA Precautions for use ● ESD S9269, S9270 may be damaged or their performance may deteriorate by such factors as electro static discharge from the human body, surge voltages from measurement equipment, leakage voltages from soldering irons and packing materials, etc. As a countermeasure against electro static discharge, the device, operator, work place and measuring jigs must all be set at the same potential. The following precautions must be observed during use: · To protect the device from electro static discharge which accumulate on the operator or the operator's clothes, use a wrist strap or similar tools to ground the operator's body via a high impedance resistor (1 MΩ). · A semiconductive sheet (1 MΩ to 100 MΩ) should be laid on both the work table and the floor in the work area. · When soldering, use an electrically grounded soldering iron with an isolation resistance of more than 10 MΩ. · For containers and packing, use of a conductive material or aluminum foil is effective. When using an antistatic material, use one with a resistance of 0.1 MΩ/cm2 to 1 GΩ/cm2. ● Wiring If electric current or voltage is applied in reverse polarity to an electronic device such as a preamplifier, this can degrade device performance or destroy the device. Always check the wiring and dimensional outline to avoid misconnection. Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2004 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, http://www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Cat. No. KSPD1066E01 Dec. 2004 DN 3