HAMAMATSU S9971-1007

IMAGE SENSOR
CCD area image sensor
S9970/S9971 series
Low dark signal · low readout noise/front-illuminated FFT-CCD
S9970/S9971 series are families of FFT-CCD image sensors specifically designed for low-light-level detection in scientific applications.
S9970/S9971 series offer lower dark current and lower readout noise than S7010/S7011 series that have been marketed. By using the binning
operation, S9970/S9971 series can be used as a linear image sensor having a long aperture in the direction of the device length. This makes
S9970/S9971 series ideally suited for use in spectrophotometry. The binning operation offers significant improvement in S/N and signal
processing speed compared with conventional methods by which signals are digitally added by an external circuit. S9970/S9971 series also
feature low noise and low dark signal (MPP mode operation). This enables low-light-level detection and long integration time, thus achieving a
wide dynamic range.
S9970/S9971 series have an effective pixel size of 24 × 24 µm and are available in image areas ranging from 12.288 (H) × 1.44 (V) mm2 (512 ×
60 pixels) up to a large image area of 24.576 (H) × 6.048 (V) mm2 (1024 × 252 pixels). S9970/S9971 series are pin compatible with S7010/S7011
series. (Operating conditions are a little bit changed from S7010/S7011 series.)
Features
Applications
l Low dark signal: 10 e-/pixel/s Typ. (0 ˚C, MPP mode)
l Low readout noise: 4 e-rms Typ.
l 512 (H) × 60 (V) to 1024 (H) × 252 (V) pixel format
l Pixel size: 24 × 24 µm
l Line/pixel binning
l 100 % fill factor
l Wide dynamic range
l MPP operation
l Fluorescence spectrometer, ICP
l Raman spectrometer
l Industrial inspection requiring
l Semiconductor inspection
l DNA sequencer
l Low-light-level detection
■ Selection guide
Type No.
S9970-0906
S9970-1006
S9970-1007
S9970-1008
S9971-0906
S9971-1006
S9971-1007
S9971-1008
Cooling
Non-cooled
One-stage
TE-cooled
Number of
total pixels
Number of
active pixels
532 × 64
1044 × 64
1044 × 128
1044 × 256
532 × 64
1044 × 64
1044 × 128
1044 × 256
512 × 60
1024 × 60
1024 × 124
1024 × 252
512 × 60
1024 × 60
1024 × 124
1024 × 252
Active area
[mm (H) × mm (V)]
12.288
24.576
24.576
24.576
12.288
24.576
24.576
24.576
×
×
×
×
×
×
×
×
1.440
1.440
2.976
6.048
1.440
1.440
2.976
6.048
Suitable
multichannel
Detector head
C7020
C7021
C7025
■ General ratings
Parameter
Pixel size
Vertical clock phase
Horizontal clock phase
Output circuit
Package
Specification
24 (H) × 24 (V) µm
2 phase
2 phase
One-stage MOSFET source follower
24 pin ceramic DIP (refer to dimensional outlines)
S9970 series: quartz glass
Window *1
S9971 series: sapphire glass
*1: Temporary window type (ex. S9970-0906N) and UV coat type (ex. S9970-0906UV) are available upon request.
(Temporary window is fixed by tape to protect the CCD chip and wire bonding.)
1
CCD area image sensor
S9970/S9971 series
■ Absolute maximum ratings (Ta=25 °C)
Parameter
Operating temperature
Storage temperature
OD voltage
RD voltage
ISV voltage
ISH voltage
IGV voltage
IGH voltage
SG voltage
OG voltage
RG voltage
TG voltage
Vertical clock voltage
Horizontal clock voltage
Symbol
Topr
Tstg
VOD
VRD
VISV
VISH
VIG1V , VIG2V
VIG1H , VIG2H
VSG
VOG
VRG
VTG
VP1V , VP2V
VP1H , VP2H
Min.
-50
-50
-0.5
-0.5
-0.5
-0.5
-15
-15
-15
-15
-15
-15
-15
-15
Typ.
-
Max.
+30
+70
+25
+18
+18
+18
+15
+15
+15
+15
+15
+15
+15
+15
Unit
°C
°C
V
V
V
V
V
V
V
V
V
V
V
V
Symbol
VOD
VRD
VOG
VSS
VISV
VISH
VIG1V , VIG2V
VIG1H , VIG2H
VP1VH , VP2VH
VP1VL, VP2VL
VP1HH , VP2HH
VP1HL, VP2HL
VSGH
VSGL
VRGH
VRGL
VTGH
VTGL
Min.
18
11.5
1
-8
-8
0
-9
0
-9
0
-9
0
-9
0
-9
Typ.
20
12
3
0
VRD
VRD
0
0
4
-8
4
-8
4
-8
4
-8
4
-8
Max.
22
12.5
5
6
-7
6
-7
6
-7
6
-7
6
-7
Unit
V
V
V
V
V
V
V
V
■ Operating conditions (MPP mode, Ta=25 °C)
Parameter
Output transistor drain voltage
Reset drain voltage
Output gate voltage
Substrate voltage
Test point (vertical input source)
Test point (horizontal input source)
Test point (vertical input gate)
Test point (horizontal input gate)
Vertical shift register
clock voltage
Horizontal shift register
clock voltage
Summing gate voltage
Reset gate voltage
Transfer gate voltage
High
Low
High
Low
High
Low
High
Low
High
Low
V
V
V
V
V
■ Electrical characteristics (Ta=25 °C)
Parameter
Symbol
Remark
Min.
Signal output frequency
fc
S9970/S9971-0906
S9970/S9971-1006
Vertical shift register
CP1V , CP2V
capacitance
S9970/S9971-1007
S9970/S9971-1008
S9970/S9971-0906
S9970/S9971-1006
Horizontal shift register
CP1H , CP2H
capacitance
S9970/S9971-1007
S9970/S9971-1008
Summing gate capacitance
CSG
Reset gate capacitance
CRG
S9970/S9971-0906
S9970/S9971-1006
Transfer gate
CTG
capacitance
S9970/S9971-1007
S9970/S9971-1008
Transfer efficiency
CTE
*2
0.99995
DC output level
Vout
*3
12
Output impedance
Zo
*3
Power dissipation
P
*3, *4
*2: Charge transfer efficiency per pixel, measured at half of the full well capacity.
*3: The values depend on the load resistance. (VOD =20 V, Load resistance=22 kΩ)
*4: Power dissipation of the on-chip amplifier.
2
Typ.
0.1
750
1500
3000
6000
100
180
180
180
7
7
60
100
100
100
0.99999
15
3
15
Max.
1
-
Unit
MHz
pF
pF
-
pF
pF
pF
18
-
V
kΩ
mW
CCD area image sensor
S9970/S9971 series
■ Electrical and optical characteristics (Ta=25 °C, unless otherwise noted)
Parameter
Symbol
Remark
Min.
Typ.
Max.
Unit
Saturation output voltage
Vsat
Fw × Sv
V
Vertical
150
300
Full well
Fw
kecapacity
Horizontal
300
600
CCD node sensitivity
Sv
*5
3.5
µV/e+25 °C
200
3000
Dark current
DS
*6
e-/pixel/s
(MPP mode)
0 °C
10
150
Readout noise
Nr
*7
4
18
e-rms
Line binning
16666
150000
Dynamic range
*8
Area scanning
8333
75000
Spectral response range
400 to 1100
nm
λ
Photo response non-uniformity
PRNU
*9
±10
%
Point defects
*10
0
Blemish
Cluster defects
*11
0
Column defects
*12
0
*5: VOD=20 V , Load resistance=22 kΩ
*6: Dark current nearly doubles for every 5 to 7 °C increase in temperature.
*7: -40 °C, operating frequency is 80 kHz.
*8: DR = Fw / Nr
*9: Measured at half of the full well capacity. PRNU = noise / signal × 100 [%], noise: fixed pattern noise (peak to peak)
*10: White spots > 3 % of full well at 0 °C after Ts=1 s
Black spots
Pixels whose sensitivity is lower than one-half of the average pixel output. (Measured with uniform light producing onehalf of the saturation charge)
*11: 2 to 9 contiguous defective pixels
*12: 10 or more contiguous defective pixels
■ Spectral response (without window)
■ Spectral transmittance characteristics
(Typ. Ta=25 ˚C)
50
(Typ. Ta=25 ˚C)
100
80
40
TRANSMITTANCE (%)
QUANTUM EFFICIENCY (%)
90
30
20
UV COAT
QUARTZ WINDOW
70
SAPPHIRE WINDOW
60
50
40
30
20
10
10
0
200 300 400 500 600 700 800 900 1000 1100 1200
0
100 200 300 400 500 600 700 800 900 1000
WAVELENGTH (nm)
WAVELENGTH (nm)
KMPDB0244EB
KMPDB0101EA
3
CCD area image sensor
S9970/S9971 series
■ Device structure, line output format
IG1V IG2V ISV
24
23 22
SS
20
TG
16
P1V
15
P2V
14
......
V
1
RD
2
OS
3
......
......
H
D11
D12
D13
D14
D15
D16
D17
D18
D19
D20
RG
D1
D2
D3
D4
D5
D6
D7
D8
D9
D10
1
V=60, 124, 252
H=512, 1024
13 ISH
12 IG1H
4
OD
5
OG
6
SG
9
10
11
IG2H
2 ISOLATION 512 or 2 ISOLATION P2H P1H
1024
4 OPTICAL
SIGNAL OUT
4 OPTICAL
4 BLANK
4 BLANK
BLACK
BLACK
KMPDC0015EB
Pixel format
Blank
4
Optical Black
4
Left ← Horizontal Direction → Right
Isolation
Effective
Isolation
2
512 or 1024
2
Optical Black
4
Top ← Vertical Direction → Bottom
Isolation
Effective
Isolation
2
60, 124 or 252
2
■ Timing chart
Line binning
INTEGRATION PERIOD
(Shutter must be open)
Tpwv
1
P1V
VERTICAL BINNING PERIOD
READOUT PERIOD (Shutter must be closed)
(Shutter must be closed)
64← 60 + 4 (ISOLATION): S9970/1-0906/-1006
63
3.. 62
128← 124 + 4 (ISOLATION): S9970/1-1007
3..126 127
256← 252 + 4 (ISOLATION): S9970/1-1008
3..254 255
2
Tovr
P2V, TG
4..530 531
4..1042 1043
Tpwh, Tpws
P1H
1
2
532 : S9970/1-0906
1044: S9970/1-1006/-1007/-1008
3
P2H, SG
Tpwr
RG
OS
D1
D2
S1..S512
D19
D3..D10, S1..S1024, D11..D18
D20: S9970/1-0906
: S9970/1-1006/-1007/-1008
KMPDC0227EA
4
Blank
4
S9970/S9971 series
CCD area image sensor
Area scanning 1: low dark current mode
INTEGRATION PERIOD
(Shutter must be open)
Tpwv
1
2
READOUT PERIOD (Shutter must be closed)
4.. 63 64← 60 + 4 (ISOLATION): S9970/1-0906/-1006
4..127 128←124 + 4 (ISOLATION): S9970/1-1007
4..255 256←252 + 4 (ISOLATION): S9970/1-1008
3
P1V
P2V, TG
P1H
P2H, SG
RG
OS
Tovr
P2V, TG
ENLARGED VIEW
Tpwh, Tpws
P1H
P2H, SG
Tpwr
RG
OS
D1
D2
D3
S1..S512
D4
D18
D5..D10, S1..S1024, D11..D17
D19
D20: S9970/1-0906
: S9970/1-1006/-1007/-1008
KMPDC0228EA
Area scanning 2: large full well mode
INTEGRATION PERIOD
(Shutter must be open)
Tpwv
1
2
READOUT PERIOD (Shutter must be closed)
4.. 63 64← 60 + 4 (ISOLATION): S9970/1-0906/-1006
4..127 128←124 + 4 (ISOLATION): S9970/1-1007
4..255 256←252 + 4 (ISOLATION): S9970/1-1008
3
P1V
P2V, TG
P1H
P2H, SG
RG
OS
Tovr
P2V, TG
ENLARGED VIEW
Tpwh, Tpws
P1H
P2H, SG
Tpwr
RG
OS
D1
D2
D3
S1..S512
D4
D18
D5..D10, S1..S1024, D11..D17
D19
D20: S9970/1-0906
: S9970/1-1006/-1007/-1008
KMPDC0229EA
Param eter
P1V, P2V, TG
Pulse width
S9970/S9971-0906
S9970/S9971-1006
S9970/S9971-1007
S9970/S9971-1008
Sym bol
Rem ark
Tpwv
* 13
Rise and fall tim e
Tprv, Tpfv
Pulse width
Tpwh
P1H, P2H
Rise and fall tim e
Tprh, Tpfh
Duty ratio
Pulse width
Tpws
SG
Rise and fall tim e
Tprs, Tpfs
Duty ratio
Pulse width
Tpwr
RG
Rise and fall tim e
Tprr, Tpfr
TG - P1H
Overlap tim e
Tovr
*13: The clock pulses should be overlapped at 50 % of clock pulse am plitude.
*14: P2H and SG should have the sam e electrical specifications.
* 13
* 14
-
Min.
1.5
3.0
6.0
12
200
500
10
500
10
100
5
3
Typ.
4.5
9.0
18
36
5000
50
5000
50
500
6
Max.
-
Unit
µs
ns
ns
ns
%
ns
ns
%
ns
ns
µs
5
CCD area image sensor
S9970/S9971 series
■ Dimensional outlines (unit: mm)
S9970-0906
PHOTOSENSITIVE
SURFACE
b
1.1 ± 0.3
10.05 ± 0.25
a
31.75 ± 0.3
1st PIN INDICATION PAD
3.0
PHOTOSENSITIVE SURFACE
0.46
2.54
27.94
KMPDA0193EA
S9970-1006/-1007
PHOTOSENSITIVE
SURFACE
b
1.1 ± 0.3
10.05 ± 0.25
a
40.64 ± 0.41
1st PIN INDICATION PAD
3.0
PHOTOSENSITIVE SURFACE
0.46
2.54
27.94
KMPDA0194EA
S9970-1008
PHOTOSENSITIVE
SURFACE
b
1.1 ± 0.3
14.99 ± 0.25
a
40.64 ± 0.41
1st PIN INDICATION PAD
Type No.
PHOTOSENSITIVE SURFACE
3.0
S9970-0906
S9970-1006
S9970-1007
S9970-1008
0.46
2.54
27.94
6
KMPDA0195EA
Active area
a
b
12.288 (H)
1.440 (V)
24.576 (H)
1.440 (V)
24.576 (H)
2.976 (V)
24.576 (H)
6.048 (V)
S9970/S9971 series
CCD area image sensor
S9971-0906
a
12.0
14.99 ± 0.25
b
4.0
c
3.2 ± 0.4
5.0
32.0 ± 0.3
50.0
1st PIN INDICATION PAD
PHOTOSENSITIVE SURFACE
7.65 ± 0.5
TE-COOLER
0.46
2.54
27.94
KMPDA0196EA
S9971-1006/-1007
a
14.99 ± 0.25
c
12.0
4.0
b
3.2 ± 0.4
5.0
40.64 ± 0.41
58.84
1st PIN INDICATION PAD
PHOTOSENSITIVE SURFACE
Type No.
S9971-0906
S9971-1006
S9971-1007
0.46
2.54
7.65 ± 0.5
TE-COOLER
27.94
a
12.288 (H)
24.576 (H)
24.576 (H)
Active area
b
1.440 (V)
1.440 (V)
2.976 (V)
c
7.5
7.5
7.1
KMPDA0197EA
S9971-1008
WINDOW 28.6
22.4
22.9
6.7
7.3
4.0
19.0
6.048
8.2
ACTIVE AREA 24.576
2.54
44.0
52.0
60.0
TE-COOLER
7.7
5.3
PHOTOSENSITIVE SURFACE
1.0
1st PIN INDICATION PAD
(24×) 0.5
KMPDA0198EA
7
CCD area image sensor
S9970/S9971 series
■ Pin connections
S9970 series
S9971 series
Remark
Symbol
Description
Symbol
Description
1
RG
Reset gate
RG
Reset gate
2
RD
Reset drain
RD
Reset drain
3
OS
Output transistor source
OS
Output transistor source
4
OD
Output transistor drain
OD
Output transistor drain
5
OG
Output gate
OG
Output gate
6
SG
Summing gate
SG
Summing gate
Same timing as P2H
7
NC
Th1
Thermistor
8
NC
Th2
Thermistor
9
P2H
CCD horizontal register clock-2
P2H
CCD horizontal register clock-2
10
P1H
CCD horizontal register clock-1
P1H
CCD horizontal register clock-1
11
IG2H
Test point (horizontal input gate-2)
IG2H
Test point (horizontal input gate-2)
Shorted to GND
12
IG1H
Test point (horizontal input gate-1)
IG1H
Test point (horizontal input gate-1)
Shorted to GND
13
ISH
Test point (horizontal input source)
ISH
Test point (horizontal input source)
Shorted to RD
14
P2V
CCD vertical register clock-2
P2V
CCD vertical register clock-2
15
P1V
CCD vertical register clock-1
P1V
CCD vertical register clock-1
16
TG *15 Transfer gate
TG *15 Transfer gate
Same timing as P2V
17
NC
NC
18
NC
PTE-cooler19
NC
P+
TE-cooler+
20
SS
Substrate (GND)
SS
Substrate (GND)
21
NC
NC
22
ISV
Test point (vertical input source)
ISV
Test point (vertical input source)
Shorted to RD
23
IG2V
Test point (vertical input gate-2)
IG2V
Test point (vertical input gate-2)
Shorted to GND
24
IG1V
Test point (vertical input gate-1)
IG1V
Test point (vertical input gate-1)
Shorted to GND
*15: TG is an isolation gate between vertical register and horizontal register. In standard operation, the same pulse as P2V should be
applied to TG.
Pin No.
■ Specifications of built-in TE-cooler (Typ.)
Parameter
Symbol
Condition
S9971-0906
S9971-1006/-1007
S9971-1008
Unit
Internal resistance
Rint Ta=25 °C
2.8
6.0
1.2
Ω
16
17
18
Maximum current *
Imax Tc * =Th * =25 °C
1.5
1.5
3.0
A
Maximum voltage
Vmax Tc *17=Th *18=25 °C
4.4
8.8
3.6
V
Maximum heat
Qmax
3.4
6.7
5.1
W
absorption *19
Maximum temperature
70
°C
of hot side
*16: Maximum current Imax:
If the current is greater than Imax, the heat absorption begins to decrease due to the Joule heat. It should be noted that this
value is not a damage threshold. To protect the thermoelectric cooler and maintain stable operation, the supply current should
be less than 60 % of this maximum current.
*17: Temperature of cool side of thermoelectric cooler
*18: Temperature of hot side of thermoelectric cooler
*19: Maximum heat absorption Qmax
This is a heat absorption when the maximum current is supplied to the TE-cooler.
8
CCD area image sensor
S9970/S9971 series
■ TE-cooler characteristics
S9971-0906
S9971-1006/-1007
(Typ. Ta=25 ˚C)
10
4
10
8
10
3
0
6
0
2
-10
4
-10
1
-20
2
-20
VOLTAGE vs. CURRENT
CCD TEMPERATURE vs. CURRENT
0
0
0.5
1.0
1.5
VOLTAGE (V)
CCD TEMPERATURE (˚C)
VOLTAGE vs. CURRENT
CCD TEMPERATURE vs. CURRENT
VOLTAGE (V)
20
20
0
-30
2.0
0
0.5
1.0
1.5
CCD TEMPERATURE (˚C)
(Typ. Ta=25 ˚C)
5
-30
2.0
CURRENT (A)
CURRENT (A)
KMPDB0176EB
KMPDB0177EB
S9971-1008
(Typ. Ta=25 ˚C)
6
VOLTAGE (V)
30
VOLTAGE vs. CURRENT
CCD TEMPERATURE vs. CURRENT
20
5
10
4
0
3
-10
2
-20
1
-30
0
0
1
2
3
4
CCD TEMPERATURE (˚C)
7
-40
CURRENT (A)
KMPDB0179EB
9
CCD area image sensor
S9970/S9971 series
■ Specifications of built-in temperature sensor
A chip thermistor is built in the same package with a CCD chip, and the CCD chip temperature can be monitored with it. A relation
between the thermistor resistance and absolute temperature is expressed by the following equation.
1 MΩ
The characteristics of the thermistor used are as follows.
R (298K) = 10 kΩ
B (298K / 323K) = 3450 K
RESISTANCE
R1 = R2 × expB (1 / T1 - 1 / T2)
where R1 is the resistance at absolute temperature T1 (K)
R2 is the resistance at absolute temperature T2 (K)
B is so-called the B constant (K)
100 kΩ
10 kΩ
220
240
260
280
300
TEMPERATURE (K)
KMPDB0111EB
■ Precaution for use (Electrostatic countermeasures)
● Handle these sensors with bare hands or wearing cotton gloves. In addition, wear anti-static clothing or use a wrist strap, in
order to prevent electrostatic damage due to electrical charges from friction.
● Avoid directly placing these sensors on a work-desk or work-bench that may carry an electrostatic charge.
● Provide ground lines or ground connection with the work-floor, work-desk and work-bench to allow static electricity to
discharge.
● Ground the tools used to handle these sensors, such as tweezers and soldering irons.
It is not always necessary to provide all the electrostatic measures stated above. Implement these measures according to the
amount of damage that occurs.
■ Element cooling/heating temperature incline rate
When cooling the CCD by an externally attached cooler, set the cooler operation so that the temperature gradient (rate of
temperature change) for cooling or allowing the CCD to warm back is less than 5 K/minute.
Multichannel detector head (C7020, C7021, C7025)
Features
l C7020: for S9970 series
C7021: for S9971-0906/-1006/-1007
C7025: for S9971-1008
l Area scanning or full line-binnng operation
l Readout frequency: 250 kHz
l Readout noise: 20 e-rms
l ∆T=50 ˚C (∆T changes by radiation method.)
Input
Supply
voltage
Master start
Master clock
Symbol
VD1
VA1+
VA1VA2
VD2
Vp
VF
φms
φmc
Value
+5 Vdc, 200 mA
+15 Vdc, +100 mA
-15 Vdc, -100 mA
+24 Vdc, 30 mA
+5 Vdc, 30 mA (C7021, C7025)
+5 Vdc, 2.5 A (C7021, C7025)
+12 Vdc, 100 mA (C7021, C7025)
HCMOS logic compatible
HCMOS logic compatible, 1 MHz
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2007 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Cat. No. KMPD1089E06
Feb. 2007 DN
10