HANBit HMF4M32M8G FLASH-ROM MODULE 16MByte (4M x 32Bit), 72-Pin SIMM, 5V Part No. HMF4M32M8G GENERAL DESCRIPTION The HMF4M32M8G is a high-speed flash read only memory (FROM) module containing 8,388,608 words organized in a x32bit configuration. The module consists of eight 2M x 8bit FROM mounted on a 72 -pin, double-sided, FR4-printed circuit board. Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state-machine, which controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is similar to reading from 12.0V flash or EPROM devices. Eight chip enable inputs, (/CE_UU1, /CE_UM1, /CE_LM1, /CE_LL1, /CE_UU2, /CE_UM2, /CE_LM2, CE_LL2) are use d to enable the module’s 4 bytes independently. Outputs enable (/OE) and write enable (/WE) can set the memory input and output.When FROM module is disable condition the module is becoming power standby mode, system designer can get low power design. All module components may be powered from a single +5V DC power supply and all inputs and outputs are TTL-compatible. FEATURES PIN ASSIGNMENT w Part Identifications HMF4M32M8G : 16Mbyte, 72-pin SIMM, Gold PIN SYMBOL PIN SYMBOL PIN SYMBOL HMF4M32M8 : 16Mbyte, 72-pin SIMM, Solder 1 Vss 25 A20 49 DQ17 2 A3 26 DQ8 50 DQ18 3 A2 27 DQ9 51 DQ22 w High-density 16MByte design 4 A1 28 DQ10 52 DQ21 w High-reliability, low-power design 5 A0 29 /CE-LM2 53 DQ20 w Single + 5V ± 0.5V power supply 6 Vcc 30 Vcc 54 DQ19 7 A11 31 /CE-LM1 55 A19 8 /OE 32 DQ15 56 A15 wAccess time : 75, 90 and 120ns w Easy memory expansion w All inputs and outputs are TTL-compatible 9 A10 33 DQ14 57 A12 w FR4-PCB design 10 /RESET 34 DQ13 58 A7 w Low profile 72-pin SIMM 11 /CE-LL2 35 DQ12 59 Vcc w Minimum 1,000,000 write/erase cycle 12 /CE-LL1 36 DQ11 60 A8 13 DQ7 37 A18 61 A9 w Sectors erase architecture 14 DQ0 38 A16 62 DQ24 w Sector group protection 15 DQ1 39 Vss 63 DQ25 w Temporary sector group unprotection 16 DQ2 40 A6 64 DQ26 w The used device is Am29F016B or MBM29F016-90PFTN 17 DQ6 41 /RY_BY 65 /CE-UU2 18 DQ5 42 A5 66 /CE-UU1 19 DQ4 43 A4 67 DQ31 20 DQ3 44 Vcc 68 DQ30 21 /WE 45 /CE-UM2 69 DQ29 22 A17 46 /CE-UM1 70 DQ28 23 A14 47 DQ23 71 DQ27 24 A13 48 DQ16 72 Vss OPTIONS MARKING w Timing 75ns access -75 90ns access -90 120ns access -120 w Packages 72-PIN SIMM 72-pin SIMM M TOP VIEW URL: www.hbe.co.kr REV.02(August,2002) 1 HANBit Electronics Co., Ltd. HANBit HMF4M32M8G Functional Block Diagram DQ 0-DQ31 A0-A20 DQ32 A21 A0-20 A0-20 DQ0-7 /WE U1 /OE /CE /CE-LL2 /CE-LL1 A0-20 A0-20 DQ8-15 /OE /WE U2 /WE /CE /CE-LM2 /WE A0-20 DQ16-23 /WE U3 /OE /OE U7 /CE-UM2 A0-20 A0-20 /WE DQ 16-23 /CE /CE /CE-UM1 DQ24-31 U4 /OE /WE /WE /OE /OE DQ 24-31 U8 /CE /CE /CE-UU1 REV.02(August,2002) U6 /CE A0-20 URL: www.hbe.co.kr DQ8-15 /OE /CE-LM1 /OE U5 /OE /CE /WE DQ0-7 /WE /CE-UU2 2 HANBit Electronics Co., Ltd. HANBit HMF4M32M8G TRUTH TABLE MODE /OE /CE /WE DQ POWER STANDBY X H X HIGH-Z STANDBY NOT SELECTED H L H HIGH-Z ACTIVE READ L L H Q ACTIVE WRITE or ERASE X L L D ACTIVE NOTE: X means don’t care ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATING VIN,OUT -2.0V to +7.0V Voltage with respect to ground Vcc VCC -2.0V to +7.0V Storage Temperature TSTG -65oC to +125oC Voltage with respect to ground all other pins Operating Temperature TA -55oC to +125 oC w Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage to the devic e. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extende d periods may affect reliability. RECOMMENDED DC OPERATING CONDITIONS SYMBOL MIN Vcc for ± 10% device Supply Voltages Vcc 4.5V Ground VSS 0 PARAMETER TYP. MAX 5.5V 0 0 DC AND OPERATING CHARACTERISTICS (0oC ≤ TA ≤ 70 oC ; Vcc = 5V ± 0.5V ) PARAMETER TEST CONDITIONS SYMBOL MIN MAX UNITS Input Leakage Current Vcc=Vcc max, V IN= GND to Vcc IL1 ±1.0 µA Output Leakage Current Vcc=Vcc max, VOUT= GND to Vcc IL0 ±1.0 µA Output High Voltage IOH = -2.5mA, Vcc = Vcc min VOH Output Low Voltage IOL = 12mA, Vcc =Vcc min VOL 0.45 V Vcc Active Current for Read(1) /CE = VIL, /OE=VIH, ICC1 40 mA /CE = VIL, /OE=VIH ICC2 60 mA /CE= VIH ICC3 1.0 mA 4.2 V 2.4 V Vcc Active Current for Program or Erase(2) Vcc Standby Current Low Vcc Lock-Out Voltage VLKO 3.2 Notes: 1. The Icc current listed is typically less than 2mA/MHz, with /OE at V IH. 2. Icc active while embedded algorithm (program or erase) is in progress 3. Maximum Icc current specifications are tested with Vcc=Vcc ma x URL: www.hbe.co.kr REV.02(August,2002) 3 HANBit Electronics Co., Ltd. HANBit HMF4M32M8G ERASE AND PROGRAMMING PERFORMANCE LIMITS PARAMETER UNIT MIN. TYP. COMMENTS MAX. Excludes 00H programming Sector Erase Time - 1 8 sec prior to erasure Byte Programming Time - 7 300 Excludes system-level µs overhead Excludes system-level Chip Programming Time - 14.4 43.2 sec overhead TSOP CAPACITANCE PARAMETER PARAMETER SYMBOL DESCRIPTION CIN TEST SETUP MIN MAX UNIT VIN = 0 6 7.5 pF VOUT = 0 8.5 12 pF VIN = 0 7.5 9 pF Input Capacitance COUT Output Capacitance CIN2 Control Pin Capacitance o Notes : Test conditions TA = 25 C, f=1.0 MHz. AC CHARACTERISTICS u Read Only Operations Characteristics PARAMETER SYMBOLS DESCRIPTION JEDEC STANDARD tAVAV tRC tAVQV tACC TEST SETUP Read Cycle Time -75 -90 UNIT Min 70 90 ns Max 70 90 ns Max 70 90 ns /CE = V IL Address to Output Delay /OE = VIL tELQV tCE Chip Enable to Output Delay /OE = VIL tGLQV tOE Chip Enable to Output Delay Max 40 40 ns tEHQZ tDF Chip Enable to Output High-Z Max 20 20 ns tGHQZ tDF Output Enable to Output High-Z Max 20 20 ns tAXQX tQH Min 0 0 ns Output Hold Time From Addresses, /CE or /OE, Whichever Occurs First TEST SPECIFICATIONS TEST CONDITION ALL SPEED OPTIONS Output load URL: www.hbe.co.kr REV.02(August,2002) UNIT 1TTL gate 4 HANBit Electronics Co., Ltd. HANBit HMF4M32M8G Output load capacitance, 100 pF 20 ns 0.45-2.4 V Input timing measurement reference levels 0.8 V Output timing measurement reference levels 2.0 V CL (Including jig capacitance) Input rise and full times Input pulse levels 5.0V 2.7kΩ IN3064 or Equivalent Device Under Test CL 6.2kΩ Diodes = IN3064 or Equivalent Note : CL = 100pF including jig capacitance u Erase/Program Operations PARAMETER SYMBOLS DESCRIPTION -75 -90 UNIT JEDEC STANDARD tAVAV tWC Write Cycle Time Min 70 90 ns tAVWL tAS Address Setup Time Min 0 0 ns tWLAX tAH Address Hold Time Min 40 45 ns tDVWH tDS Data Setup Time Min 40 45 ns tWHDX tDH Data Hold Time Min 0 0 ns tOES Output Enable Setup Time Min 0 0 ns Read Recover Time Before Write Min 0 0 ns tGHWL tGHWL tELWL tCS /CE Setup Time Min 0 0 ns tWHEH tCH /CE Hold Time Min 0 0 ns tWLWH tWP Write Pulse Width Min 40 45 ns tWHWL tWPH Write Pulse Width High Min 20 20 ns tWHWH1 tWHWH1 Byte Programming Operation Typ 7 7 µs tWHWH2 tWHWH2 Sector Erase Operation (Note1) Typ 1 1 sec URL: www.hbe.co.kr REV.02(August,2002) 5 HANBit Electronics Co., Ltd. HANBit HMF4M32M8G tVCS Vcc set up time 50 µs -75 -90 UNIT Min 50 Notes : 1. This does not include the preprogramming time 2. This timing is only for Sector Protect operations u Erase/Program Operations Alternate /CE Controlled Writes PARAMETER SYMBOLS DESCRIPTION JEDEC STANDARD tAVAV tWC Write Cycle Time Min 70 90 ns tAVWL tAS Address Setup Time Min 0 0 ns tWLAX tAH Address Hold Time Min 40 45 ns tDVWH tDS Data Setup Time Min 40 45 ns tWHDX tDH Data Hold Time Min 0 0 ns tOES Output Enable Setup Time Min 0 0 ns Read Recover Time Before Write Min 0 0 ns tGHWL tGHWL tELWL tCS /CE Setup Time Min 0 0 ns tWHEH tCH /CE Hold Time Min 0 0 ns tWLWH tWP Write Pulse Width Min 40 45 ns tWHWL tWPH Write Pulse Width High Min 20 20 ns tWHWH1 tWHWH1 Byte Programming Operation Typ 7 7 µs tWHWH2 tWHWH2 Sector Erase Operation (Note1) Typ 1 1 sec Notes : 1. This does not include the preprogramming time 2. This timing is only for Sector Protect operations URL: www.hbe.co.kr REV.02(August,2002) 6 HANBit Electronics Co., Ltd. HANBit HMF4M32M8G u READ OPERATIONS TIMING u RESET TIMING URL: www.hbe.co.kr REV.02(August,2002) 7 HANBit Electronics Co., Ltd. HANBit HMF4M32M8G u PROGRAM OPERATIONS TIMING u CHIP/SECTOR ERASE OPERATION TIMINGS URL: www.hbe.co.kr REV.02(August,2002) 8 HANBit Electronics Co., Ltd. HANBit HMF4M32M8G u DATA# POLLING TIMES(DURING EMBEDDED ALGORITHMS) u TOGGLE# BIT TIMINGS (DURING EMBEDDED ALGORITHMS) URL: www.hbe.co.kr REV.02(August,2002) 9 HANBit Electronics Co., Ltd. HANBit HMF4M32M8G u SECTOR PROTECT UNPROTECT TIMEING DIAGRAM u ALTERNATE CE# CONTROLLED WRITE OPERATING TIMINGS URL: www.hbe.co.kr REV.02(August,2002) 10 HANBit Electronics Co., Ltd. HANBit HMF4M32M8G PACKAGE DIMENSIONS 108mm 3.2 mm 6.35 mm 1 72 2.03 mm 1.02 mm - 6.35 mm 1.27 mm 3.34 mm 95.25 mm 2.54 mm 0.25 mm MAX MIN 1.27±0.08 mm Gold: 1.04±0.10 mm 1.27 mm Solder: 0.914±0.10 mm (Solder & Gold Plating) ORDERING INFORMATION Part Number Density Org. Package HMF4M32M8G-75 16MByte 4MX 32bit 72 Pin-SIMM HMF4M32M8G-90 16MByte 4MX 32bit HMF4M32M8G-120 16MByte 4MX 32bit URL: www.hbe.co.kr REV.02(August,2002) Component Vcc SPEED 8EA 5V 70ns 72 Pin-SIMM 8EA 5V 90ns 72 Pin-SIMM 8EA 5V 120ns 11 Number HANBit Electronics Co., Ltd.