HANBIT HMF8M32M8A

HANBit
HMF8M32M8A
FLASH-ROM MODULE 32MByte (8M x 32Bit), 72-Pin SIMM, 5V
Part No. HMF8M32M8A
GENERAL DESCRIPTION
The HMF8M32M8A is a high-speed flash read only memory (FROM) module containing 16,777,216 words organized in a
x32bit configuration. The module consists of eight 4M x 8bit FROM mounted on a 72-pin, double-sided, FR4-printed circuit board.
Commands are written to the command register using standard microprocessor write timings.
Register contents serve as input to an internal state-machine, which controls the erase and programming circuitry. Write cycles
also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is
similar to reading from 12.0V flash or EPROM devices.
Eight chip enable inputs, (/CE_UU1, /CE_UM1, /CE_LM1, /CE_LL1, /CE_UU2, /CE_UM2, /CE_LM2, CE_LL2) are used to
enable the module’s 4 bytes independently. Outputs enable (/OE) and write enable (/WE) can set the memory input and
output.When FROM module is disable condition the module is becoming power standby mode, system designer can get lowpower design. All module components may be powered from a single +5V DC power supply and all inputs and outputs are TTLcompatible.
FEATURES
PIN ASSIGNMENT
w Part Identifications
PIN
SYMBOL
PIN
SYMBOL
PIN
SYMBOL
1
Vss
25
A20
49
DQ17
2
A3
26
DQ8
50
DQ18
3
A2
27
DQ9
51
DQ22
w High-density 32MByte design
4
A1
28
DQ10
52
DQ21
w High-reliability, low-power design
5
A0
29
/CE-LM2
53
DQ20
w Single + 5V ± 0.5V power supply
6
Vcc
30
Vcc
54
DQ19
7
A11
31
/CE-LM1
55
A19
8
/OE
32
DQ15
56
A15
HMF8M32M8A : 32Mbyte, 72-pin SIMM, Gold
wAccess time : 55, 70, 90
w Easy memory expansion
w All inputs and outputs are TTL-compatible
9
A10
33
DQ14
57
A12
w FR4-PCB design
10
/RESET
34
DQ13
58
A7
w Low profile 72-pin SIMM
11
/CE-LL2
35
DQ12
59
Vcc
w Minimum 100,000 write/erase cycle
12
/CE-LL1
36
DQ11
60
A8
13
DQ7
37
A18
61
A9
14
DQ0
38
A16
62
DQ24
w Sector group protection
15
DQ1
39
Vss
63
DQ25
w Temporary sector group unprotection
16
DQ2
40
A6
64
DQ26
w The used device is Am29F032B or M29F032D
17
DQ6
41
A21
65
/CE-UU2
18
DQ5
42
A5
66
/CE-UU1
19
DQ4
43
A4
67
DQ31
20
DQ3
44
Vcc
68
DQ30
w Sectors erase architecture
OPTIONS
MARKING
w Timing
21
/WE
45
/CE-UM2
69
DQ29
55ns access
-55
22
A17
46
/CE-UM1
70
DQ28
70ns access
-70
23
A14
47
DQ23
71
DQ27
24
A13
48
DQ16
72
Vss
90ns access
-90
w Packages
72-PIN SIMM
72-pin SIMM
M
TOP VIEW
URL: www.hbe.co.kr
REV.02(August,2002)
1
HANBit Electronics Co., Ltd.
HANBit
HMF8M32M8A
FUNCTIONAL BLOCK DIAGRAM
DQ 0-DQ31
A0-A21
DQ32
A22
A0-21
A0-21
DQ0-7
/WE
U1
/OE
/CE
/CE-LL2
/CE-LL1
A0-21
A0-21
DQ8-15
/OE
/WE
U2
/WE
/CE
/CE-LM2
/WE
A0-21
DQ16-23
/WE
U3
/OE
/OE
U7
/CE-UM2
A0-21
A0-21
/WE
DQ 16-23
/CE
/CE
/CE-UM1
DQ24-31
U4
/OE
/WE
/WE
/OE
/OE
DQ 24-31
U8
/CE
/CE
/CE-UU1
REV.02(August,2002)
U6
/CE
A0-21
URL: www.hbe.co.kr
DQ8-15
/OE
/CE-LM1
/OE
U5
/OE
/CE
/WE
DQ0-7
/WE
/CE-UU2
2
HANBit Electronics Co., Ltd.
HANBit
HMF8M32M8A
TRUTH TABLE
MODE
/OE
/CE
/WE
DQ
POWER
STANDBY
X
H
X
HIGH-Z
STANDBY
NOT SELECTED
H
L
H
HIGH-Z
ACTIVE
READ
L
L
H
Q
ACTIVE
WRITE or ERASE
X
L
L
D
ACTIVE
NOTE: X means don’t care
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATING
VIN,OUT
-0.6V to + VCC +0.6V
Voltage with respect to ground Vcc
VCC
-0.60V to + 6.0V
Storage Temperature
TSTG
-65oC to + 125oC
Voltage with respect to ground all other pins
Operating Temperature
TA
-40oC to + 85oC
w Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at these or any other conditions above those indicated
in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS
SYMBOL
MIN
Vcc for ± 10% device Supply Voltages
Vcc
4.5V
Ground
VSS
0
PARAMETER
TYP.
MAX
5.5V
0
0
DC AND OPERATING CHARACTERISTICS (0oC ≤ TA ≤ 70 oC ; Vcc = 5V ± 0.5V )
PARAMETER
TEST CONDITIONS
SYMBOL
MIN
MAX
UNITS
Input Leakage Current
Vcc=Vcc max, VIN= GND to Vcc
IL1
±1.0
µA
Output Leakage Current
Vcc=Vcc max, VOUT= GND to Vcc
IL0
±1.0
µA
Output High Voltage
IOH = -2.5mA, Vcc = Vcc min
VOH
Output Low Voltage
IOL = 12mA, Vcc =Vcc min
VOL
0.45
V
Vcc Active Current for Read(1)
/CE = VIL, /OE=VIH,
ICC1
40
mA
/CE = VIL, /OE=VIH
ICC2
60
mA
/CE= VIH
ICC3
1.0
mA
4.2
V
2.4
V
Vcc Active Current for Program
or Erase(2)
Vcc Standby Current
Low Vcc Lock-Out Voltage
VLKO
3.2
Notes:
1. The Icc current listed is typically less than 2mA/MHz, with /OE at VIH.
2. Icc active while embedded algorithm (program or erase) is in progress
3. Maximum Icc current specifications are tested with Vcc=Vcc max
URL: www.hbe.co.kr
REV.02(August,2002)
3
HANBit Electronics Co., Ltd.
HANBit
HMF8M32M8A
ERASE AND PROGRAMMING PERFORMANCE
LIMITS
PARAMETER
UNIT
MIN.
TYP.
COMMENTS
MAX.
Sector Erase Time
-
1
8
Chip Erase Time
-
64
Byte Programming Time
-
7
Chip Programming Time
-
28.8
sec
Excludes 00H programming
sec
prior to erasure
300
µs
Excludes system-level
86.4
sec
overhead
TSOP CAPACITANCE
PARAMETER
PARAMETER
SYMBOL
CIN
TEST SETUP
MIN
MAX
UNIT
VIN = 0
6
7.5
pF
VOUT = 0
8.5
12
pF
VIN = 0
7.5
9
pF
DESCRIPTION
Input Capacitance
COUT
Output Capacitance
CIN2
Control Pin Capacitance
Notes : Test conditions TA = 25o C, f=1.0 MHz.
TEST SPECIFICATIONS
TEST CONDITION
ALL SPEED OPTIONS
Output load
UNIT
1TTL gate
Output load capacitance, CL (Including jig capacitance)
100
pF
Input rise and full times
20
ns
0.45-2.4
V
Input timing measurement reference levels
0.8
V
Output timing measurement reference levels
2.0
V
Input pulse levels
5.0V
2.7kΩ
IN3064
or Equivalent
Device
Under
Test
CL
6.2kΩ
Diodes = IN3064
or Equivalent
Note : CL = 100pF including jig capacitance
URL: www.hbe.co.kr
REV.02(August,2002)
4
HANBit Electronics Co., Ltd.
HANBit
HMF8M32M8A
AC CHARACTERISTICS
u Read Only Operations Characteristics
PARAMETER
SYMBOLS
SPEED OPTIONS
DESCRIPTION
TEST SETUP
JEDEC STANDARD
tAVAV
tRC
tAVQV
tACC
Read Cycle Time
UNIT
-55
-70
-90
Min
55
70
90
ns
Max
55
70
90
ns
Max
55
70
90
ns
/CE = VIL
Address to Output Delay
/OE = VIL
tELQV
tCE
Chip Enable to Output Delay
/OE = VIL
tGLQV
tOE
Chip Enable to Output Delay
Max
30
40
40
ns
tEHQZ
tDF
Chip Enable to Output High-Z
Max
18
20
20
ns
tGHQZ
tDF
Output Enable to Output High-Z
Max
18
20
20
ns
tAXQX
tQH
Min
0
0
0
ns
Output Hold Time From Addresses,
/CE or /OE, Whichever Occurs First
URL: www.hbe.co.kr
REV.02(August,2002)
5
HANBit Electronics Co., Ltd.
HANBit
HMF8M32M8A
u Erase/Program Operations
PARAMETER
SYMBOLS
DESCRIPTION
-55
-70
-90
UNIT
JEDEC
STANDARD
tAVAV
tWC
Write Cycle Time
Min
55
70
90
ns
tAVWL
tAS
Address Setup Time
Min
0
0
0
ns
tWLAX
tAH
Address Hold Time
Min
45
45
45
ns
tDVWH
tDS
Data Setup Time
Min
45
45
45
ns
tWHDX
tDH
Data Hold Time
Min
0
0
0
ns
tGHWL
tGHWL
Read Recover Time Before Write
Min
0
0
0
ns
tELWL
tCS
/CE Setup Time
Min
0
0
0
ns
tWHEH
tCH
/CE Hold Time
Min
0
0
0
ns
tWLWH
tWP
Write Pulse Width
Min
45
45
45
ns
tWHWL
tWPH
Write Pulse Width High
Min
20
20
20
ns
tVCS
Vcc set up time
Min
50
50
50
µs
Notes :
1. This does not include the preprogramming time
2. This timing is only for Sector Protect operations
URL: www.hbe.co.kr
REV.02(August,2002)
6
HANBit Electronics Co., Ltd.
HANBit
HMF8M32M8A
u Erase/Program Operations
Alternate /CE Controlled Writes
PARAMETER SYMBOLS
DESCRIPTION
-55
-70
-90
UNIT
Min
55
70
90
ns
Address Setup Time
Min
0
0
0
ns
tAH
Address Hold Time
Min
45
45
45
ns
tDVWH
tDS
Data Setup Time
Min
45
45
45
ns
tWHDX
tDH
Data Hold Time
Min
0
0
0
ns
tGHWL
tGHWL
Read Recover Time Before Write
Min
0
0
0
ns
tELWL
tCS
/CE Setup Time
Min
0
0
0
ns
tWHEH
tCH
/CE Hold Time
Min
0
0
0
ns
tWLWH
tWP
Write Pulse Width
Min
45
45
45
ns
tWHWL
tWPH
Write Pulse Width High
Min
20
20
20
ns
JEDEC
STANDARD
tAVAV
tWC
Write Cycle Time
tAVWL
tAS
tWLAX
Notes :
1. This does not include the preprogramming time
2. This timing is only for Sector Protect operations
URL: www.hbe.co.kr
REV.02(August,2002)
7
HANBit Electronics Co., Ltd.
HANBit
HMF8M32M8A
u READ OPERATIONS TIMING
u RESET TIMING
URL: www.hbe.co.kr
REV.02(August,2002)
8
HANBit Electronics Co., Ltd.
HANBit
HMF8M32M8A
u PROGRAM OPERATIONS TIMING
u CHIP/SECTOR ERASE OPERATION TIMINGS
URL: www.hbe.co.kr
REV.02(August,2002)
9
HANBit Electronics Co., Ltd.
HANBit
HMF8M32M8A
u DATA# POLLING TIMES(DURING EMBEDDED ALGORITHMS)
u TOGGLE# BIT TIMINGS (DURING EMBEDDED ALGORITHMS)
URL: www.hbe.co.kr
REV.02(August,2002)
10
HANBit Electronics Co., Ltd.
HANBit
HMF8M32M8A
u SECTOR PROTECT UNPROTECT TIMEING DIAGRAM
u ALTERNATE CE# CONTROLLED WRITE OPERATING TIMINGS
URL: www.hbe.co.kr
REV.02(August,2002)
11
HANBit Electronics Co., Ltd.
HANBit
HMF8M32M8A
PACKAGE DIMENSIONS
2.54 mm
MIN
0.25 mm MAX
-
1.27
Gold: 1.04±0.10 mm
Solder: 0.914±0.10 mm
1.27±0.08 mm
(Solder & Gold Plating)
ORDERING INFORMATION
Part Number
Density
Org.
Package
HMF8M32M8A-55
32MByte
8MX 32bit
72 Pin-SIMM
HMF8M32M8A-70
32MByte
8MX 32bit
HMF8M32M8A-90
32MByte
8MX 32bit
URL: www.hbe.co.kr
REV.02(August,2002)
Component
Vcc
SPEED
8EA
5V
55ns
72 Pin-SIMM
8EA
5V
70ns
72 Pin-SIMM
8EA
5V
90ns
12
Number
HANBit Electronics Co., Ltd.