HANBit HMNR1288D(V) 5.0 or 3.3V, 1 Mbit (128 Kbit x 8) TIMEKEEPER NVSRAM Part No. HMNR1288D(V) GENERAL DESCRIPTION The HMNR1288D(V) TIMEKEEPER SRAM is a 128Kb x 8 non-volatile static RAM and real time clock organized as 131,072 words by 8 bits. The special DIP package provides a fully integrated battery back-up memory and real time clock solution. The HMNR1288D(V) directly replaces industry standard 128Kbit x 8 SRAMs. It also provides the non-volatility of Flash without any requirement for special WRITE timing or limitations on the number of WRITEs that can be performed. FEATURES ■ YEAR 2000 COMPLIANT ■ INTEGRATED LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, BATTERY and CRYSTAL ■ BCD CODED YEAR, MONTH, DAY, DATE, HOURS, MINUTES, and SECONDS ■ AUTOMATIC POWER-FAIL CHIP DESELECT and WRITE PROTECTION VOLTAGES : (VPFD = Power-fail Deselect Voltage) – HMNR1288D : VCC = 4.5 to 5.5V 4.2V ≤ VPFD ≤ 4.5V – HMNR1288DV: VCC = 3.0 to 3.6V 2.7V ≤ VPFD ≤ 3.0V ■ CONVENTIONAL SRAM OPERATION : UNLIMITED WRITE CYCLES ■ SOFTWARE CONTROLLED CLOCK CALIBRATION FOR HIGH ACCURACY APPLICATIONS ■ 10 YEARS OF DATA RETENTION and CLOCK OPERATION IN THE ABSENCE OF POWER PIN and FUNCTION COMPATIBLE WITH INDUSTRY STANDARD 128K x 8 SRAMS ■ SELF-CONTAINED BATTERY and CRYSTAL IN DIP PACKAGE ■ BATTERY LOW WARNING FLAG ■ SOFTWARE CONTROLLED CLOCK CALIBRATION FOR HIGH ACCURACY APPLICATIONS PIN ASSIGNMENT ■ MICROPROCESSOR POWER-ON RESET (Valid even during battery back-up mode) /RST 1 32 VCC ■ PROGRAMMABLE ALARM OUTPUT ACTIVE IN A16 2 31 A15 BATTERY BACK-UP MODE OPTIONS A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1 DQ2 VSS MARKING w Timing 70 ns -70 85 ns -85 3 4 5 6 7 8 9 10 11 12 13 14 15 16 30 29 28 27 26 25 24 23 22 21 20 19 18 17 IRQ/FT /WE A13 A8 A9 A11 /OE A10 /CE DQ7 DQ6 DQ5 DQ4 DQ3 32-pin Encapsulated Package URL : www.hbe.co.kr Rev. 1.0 (April, 2002) 1 HANBit Electronics Co.,Ltd HANBit HMNR1288D(V) FUNCTIONAL DESCRIPTION The HMNR1288D(V) is a full function, year 2000 compliant (Y2KC), real – time clock/calendar (RTC) and 128K x 8 nonvolatile static RAM. User access to all registers within the HMNR1288D(V) is accomplished with a bytewide interface . The Real-time clock (RTC) information and control bits reside in the eight upper most RAM locations. The RTC registers contain century, year, month, date, day, hours, minutes, and seconds data in 24-hour BCD format. Corrections for the date of each month and leap year are made automatically. The RTC clock registers are double buffered to avoid access of incorrect data that can occur during clock update cycles. The double b uffered system also prevents time loss as the timekeeping countdown continues unabated by access to time register data. The HMNR1288D(V) also contains its own power-fail circuitry which deselects the device when the VCC supply is in an out of tolerance condition. This feature prevents loss of data from unpredictable system operation brought on by low VCC as errant access and update cycles are avoided. BLOCK DIAGRAM 16 x 8 TIMEKEEPER REGISTER OSCILLATOR AND CLOCK CHAIN /RST IRQ/FT 32.768KHz CRYSTAL A0 ~ A16 POWER 131,056 x 8 SRAM ARRAY LITHIUM CELL DQ0 ~ DQ7 VPFD /CE VOLTAGE SENSE AND SWITCHING CIRCURITY /WE /OE Vcc Vss A0-A16 : Address Input /WE : Write Enable /CE : Chip Enable /OE : Output Enable Vss : Ground VCC : Power (+5V or +3.3V) DQ0-DQ7 : Data In / Data Out NC : No Connection /RST : Reset Output (Open Drain) IRQ/FT : Interrupt/Frequency Test Output (Open Drain) URL : www.hbe.co.kr Rev. 1.0 (April, 2002) 2 HANBit Electronics Co.,Ltd HANBit HMNR1288D(V) Absolute Maximum Ratings Symbol Parameter Value Unit TA AmbientOperatingTemperature 0 to 70 °C TSTG Storage Temperature(Vcc Off, Oscillator Off) -40 to 70 °C Lead Solder Temperature for 10 seconds 260 °C Input or Output Voltage -0.3 to Vcc+0.3 V HMNR1288D 4.5 to 5.5 V HMNR1288DV 3.0 to 3.6 V 20 mA (1) TSLD VIO VCC Supply Voltage IO Output Current PD Power Dissipation 1 W Note : Permanent device damage may occur if Absolute Maximum Ratings are exceeded. Functional operation should be restricted to the Recommended DC Operating Conditions detailed in this data sheet. Exposure to higher than recommended voltage for extended periods of time could affect device reliability. (1) Soldering temperature not to exceed 260 ° C for 10 seconds (Total thermal budget not to exceed 150° C for longer than 30 seconds). Caution : Negative undershoots below – 0.3V are not allowed on any pin while in the Battery Back -up mode. Operating and AC Measurement Conditions Parameter HMNR1288D HMNR1288DV Unit VCC Supply Voltage 4.5 to 5.5 3.0 to 3.6 V Ambient Operating Temperature 0 to 70 0 to 70 °C Load Capacitance (CL ) 100 50 pS Input Rise and Fall Times ≤ 5 ≤ 5 nS Input Pulse Voltages 0 to 3 0 to 3 V Input and Output Timing Ref. Voltages 1.5 1.5 V Figure 1. AC Measurement Load Circuit Note : 50pF for HMNR1288DV URL : www.hbe.co.kr Rev. 1.0 (April, 2002) 3 HANBit Electronics Co.,Ltd HANBit HMNR1288D(V) Capacitance Symbol Parameter (1,2) Min Max Unit CIN Input Capacitance 10 pF (3) COUT Input/Output Capacitance 10 pF Note : 1. 2. 3. Effective capacitance measured with power supply at 5V ( HMNR1288D) or 3.3V (HMNR1288DV). Sampled only, not 100% tested. At 25° C, f = 1MHz. Outputs deselected. DC Characteristics Symbol ILI ILO (2) ICC ICC1 ICC2 Parameter Test Condition HMNR1288D (1) Min VIH ± 1 uA ± 1 ± 1 uA Supply Current Outputs open 10 mA Supply Current (Standby) TTL Supply Current (Standby) CMOS 8 3 mA /CE=VCC-0.2 3 2 mA 800 nA 100 nA 0.8 V 575 -0.3 Input High Voltage +0.3 VCC 2.0 +0.3 V 0.4 V IOL=10mA 0.4 0.4 V VOH Battery Back-up IOUT2=-1.0uA 2.0 VOUT Current (Active) VOUT1 > VCC-0.3 VOUT2>VBAT-0.3 Power-fail Deselect 4.1 Voltage 2.4 3.6 4.35 V 3.6 V 100 70 mA 100 100 uA 3.0 V 4.5 2.0 2.7 2.9 VPFD- Battery Back-up 3.0 Switchover Voltage 100 V mV VBAT Battery Voltage 3.0 Note: 1. Valid for Ambient Operating Temperature: TA =0 to 70° C or 40 to 85°C ; VCC = 4.5 to 5.5V or 3.0 to 3.6V (except where noted). 2. Outputs deselected. Rev. 1.0 (April, 2002) -0.3 0.4 VOHB URL : www.hbe.co.kr 575 IOL=2.1mA 2.4 VSO 0.8 VCC 2.2 IOH=-1.0mA Back-up) 800 100 Input Low Voltage VOUT Current (Battery 4 5 Battery Current OSC Output Low Voltage 15 /CE=VIH Output High Voltage VPFD Unit ± 1 VOH IOUT2 Max 0V ≤ VIN ≤ VCC (open drain) (4) IOUT1 Typ 0V ≤ VOUT ≤ VCC Output Low Voltage VOL Min Input Leakage Current OFF VIL Max Output Leakage Current Battery Current OSC ON IBAT Typ HMNR1288DV 4 3.0 V HANBit Electronics Co.,Ltd HANBit HMNR1288D(V) OPERATING MODES The 32-pin, 600mil DIP Hybrid houses a controller chip, SRAM, quartz crystal, and a long life lithium button cell in a single package. The clock locations contain the year, month, date, day, hour, minute, and second in 24 hour BCD format. Corrections for 28, 29 (leap year-compliant until the year 2100), 30, and 31 day months are made automatically. Byte 1FFF8h is the clock control register. This byte controls u ser access to the clock information and also stores the clock calibration setting. The seven clock bytes (1FFFFh-1FFF9h) are not the actual clock counters, they are memory locations consisting of READ/WRITE memory cells within the static RAM array. The HMNR1288D(V) includes a clock control circuit which updates the clock bytes with current information once per second. The information can be accessed by the user in the same manner as any other location in the static memory array. The HMNR1288D(V) also has its own Power-Fail Detect circuit. This control circuitry constantly monitors the supply voltage for an out of tolerance condition. When VCC is out of tolerance, the circuit write protects the TIMEKEEPER register data and SRAM, providing data security in the midst of unpredictable system operation. As VCC falls, the control circuitry automatically switches to the battery, maintaining data and clock operation until valid power is restored. Operating Modes Mode Deselect WRITE READ VCC 4.5V to 5.5V or 3.0V to 3.6V READ /CE /OE /WE DQ7 – DQ0 Power VIH X X High-Z Standby VIL X VIL DIN Active VIL VIL VIH DOUT Active VIL VIH VIH High Active Deselect VSO to VPFD (min) X X X High Deselect ≤ VSO (1) X X X High CMOS Standby Battery Backup Note : X = VIH or VIL; VSO = Battery Back-up Switchover Voltage. READ Mode The HMNR1288D(V) is in the READ Mode whenever /WE (WRITE Enable) is high and /CE (Chip Enable) is low. The unique address specified by the 17 Address Inputs defines which one of the 131,072 bytes of data is to be accessed. Valid data will be available at the Data I/O pins within Address Access Time (tAVQV) after the last address input signal is stable, providing the /CE and /OE access times are also satisfied. If the /CE and /OE access times are not met, valid data will be available after the latter of the Chip Enable Access Times (tELQV) or Output Enable Access Time (tGLQV). The state of the eight three-state Data I/O signals is controlled by /CE and /OE. If the outputs are activated before tAVQV, the data lines will be driven to an indeterminate state until tAVQV. If the Address Inputs are changed while /CE and /OE remain active, output data will remain valid for Output Data Hold Time ( tAXQX) but will go indeterminate until the next Address Access. Figure 2. READ Mode AC Waveforms /CE /OE Note : /WE = High. URL : www.hbe.co.kr Rev. 1.0 (April, 2002) 5 HANBit Electronics Co.,Ltd HANBit HMNR1288D(V) READ Mode AC Characteristics Symbol HMNR1288D HMNR1288DV -70 -85 Parameter Min Max Max tAVAV READ Cycle Time tAVQV Address Valid to Output Valid 70 85 nS tELQV Chip Enable Low to Output Valid 70 85 nS tGLQV Output Enable Low to Output Valid 25 35 nS (2) tELQX (2) tGLQX tEHQZ 70 Min Unit 85 nS Chip Enable Low to Output Transition 5 5 nS Output Enable Low to Output Transition 0 0 nS (2) Chip Enable High to Output Hi-Z 20 25 nS (2) Output Enable High to Output Hi-Z 20 25 nS tGHQZ tAXQX Address Transition to Output Transition 5 5 nS Note: 1.Valid for Ambient Operating Temperature: TA = 0 to 70° C; VCC = 4.5 to 5.5V or 3.0 to 3.6V (except where noted). 2. CL = 5pF. WRITE Mode The HMNR1288D(V) is in the WRITE Mode whenever /WE (WRITE Enable) and /CE (Chip Enable) are low state after the address inputs are stable. The start of a WRITE is referenced from the latter occurring falling edge of /WE or /CE. A WRITE is terminated by the earlier rising edge of /WE or /CE. The addresses must be held valid throughout the cycle. /CE or /WE must return high for a minimum of tEHAX from Chip Enable or tWHAX from WRITE Enable prior to the initiation of another READ or WRITE cycle. Data-in must be valid tDVWH prior to the end of WRITE and remain valid for tWHDX afterward. /OE should be kept high during WRITE cycles to avoid bus contention; although, if the output bus has been activated by a low on /CE and /OE a low on /WE will disable the outputs tWLQZ after /WE falls. Figure 3. WRITE AC Waveforms, WRITE Enable Controlled A0-A16 URL : www.hbe.co.kr Rev. 1.0 (April, 2002) 6 HANBit Electronics Co.,Ltd HANBit HMNR1288D(V) Figure 4. WRITE AC Waveforms, Chip Enable Controlled A0-A16 WRITE Mode AC Characteristics Symbol Parameter HMNR1288D HMNR1288DV -70 -85 (1) Min Max Min Unit Max tAVAV WRITE Cycle Time 70 85 nS tAVWL Address Valid to WRITE Enable Low 0 0 nS tAVEL Address Valid to Chip Enable Low 0 0 nS tWLWH WRITE Enable Pulse Width 45 55 nS tELEH Chip Enable Low to Chip Enable High 50 60 nS tWHAX WRITE Enable High to Address Transition 0 0 nS tEHAX Chip Enable High to Address Transition 0 0 nS tDVWH Input Valid to WRITE Enable High 25 30 nS tDVEH Input Valid to Chip Enable High 25 30 nS tWHDX WRITE Enable High to Input Transition 0 0 nS tEHDX Chip Enable High to Input Transition 0 0 nS (2,3) tWLQZ WRITE Enable Low to Output High-Z tAVWH Address Valid to WRITE Enable High 55 65 nS tAVEH Address Valid to Chip Enable High 55 65 nS 20 25 nS (2,3) tWHQX WRITE Enable High to Output Transition 5 5 nS Note : 1. Valid for Ambient Operating Temperature: TA = 0 to 70° C; VCC = 4.5 to 5.5V or 3.0 to 3.6V (except where noted). 2. CL = 5pF. 3. If /CE goes low simultaneously with /WE going low, the outputs remain in the high impedance state. URL : www.hbe.co.kr Rev. 1.0 (April, 2002) 7 HANBit Electronics Co.,Ltd HANBit HMNR1288D(V) Data Retention Mode With valid VCC applied, the HMNR1288D(V) operates as a conventional Bytewide static RAM. Should the supply voltage decay, the RAM will automatically deselect, write protecting itself when VCC falls between VPFD (max), VPFD (min) window. All outputs become high impedance and all inputs are treated as “Don't care.” Note : A power failure during a WRITE cycle may corrupt data at the current addressed location, but does not jeopardize the rest of the RAM's content. At voltages below VPFD (min), the memory will be in a write protected state, provided the VCC fall time is not less than tF. The HMNR1288D(V) may respond to transient noise spikes on VCC that cross into the deselect window during the time the device is sampling VCC. Therefore, decoupling of the power supply lines is recommended. When VCC drops below VSO, the control circuit switches power to the internal battery, preserving data and powering the clock. The internal energy source will maintain data in the HMNR1288D(V) for an accumulated period of at least 10 years at room temperature. As system power rises above VSO, the battery is disconnected, and the power supply is switched to external VCC . Write protection continues until VCC reaches VPFD (min) plus tREC (min). Normal RAM operation can resume tREC after VCC exceeds VPFD (max). Figure 5. Power Down/Up Mode AC Waveforms Power Down/Up AC Characteristics Symbol tF (2) (3) tFB Parameter Min VPFD (max) to VPFD (min) VCC Fall Time 300 uS HMNR1288D 10 uS HMNR1288DV 150 uS uS VPFD (min) to VSS VCC Fall Time tR VPFD (min) to VPFD (max) VCC Rise Time 10 (4) tREC VPFD (max) to RST High 40 Max 200 Unit uS tRB VSS to VPFD (min) VCC Rise Time 5 uS Note : 1. Valid for Ambient Operating Temperature: TA = 0 to 70° C; VCC = 4.5 to 5.5V or 3.0 to 3.6V (except where noted). 2. VPFD (max) to VPFD (min) fall time of less than tF may result in deselection/write protection not occurring until 200 µs after VCC passes VPFD (min). 3. VPFD (min) to VSS fall time of less than tFB may cause corruption of RAM data. URL : www.hbe.co.kr Rev. 1.0 (April, 2002) 8 HANBit Electronics Co.,Ltd HANBit HMNR1288D(V) Power Down/Up Trip Points DC Characteristics Symbol Parameter VPFD Min Typ Max Unit HMNR1288D 4.2 4.35 4.5 V HMNR1288DV 2.7 2.9 3.0 V Power-fail Deselect Voltage Battery Back-up Switchover Voltage VSO TDR (1,2) (3) HMNR1288D 3.0 V HMNR1288DV VPFD-100mV V Expected Data Retention Time 10 YEARS Note: 1. All voltages referenced to VSS . 2. Valid for Ambient Operating Temperature: TA = 0 to 70° C; VCC = 4.5 to 5.5V or 3.0 to 3.6V (except where noted). 3. At 25° C. Register Map Funtion / Data Address D7 1FFFFh D6 D5 D4 D3 D2 10Years D0 Range BCD Format Year Year 00-99 Month Month 01-12 Date : Day of Month Date 01-31 Day 01-07 Hours(24 Hour Format) Hours 00-23 1FFFEh 0 0 1FFFDh 0 0 1FFFCh 0 FT 1FFFBh 0 0 1FFFAh 0 10 Minutes Minutes Minutes 00-59 1FFF9h ST 10 Seconds Seconds Seconds 00-59 1FFF8h W R S 1FFF7h WDS BMB4 BMB3 BMB2 1FFF6h AFE 0 ABE AL10M 1FFF5h RPT4 RPT5 1FFF4h RPT3 0 1FFF3h RPT2 1FFF2h RPT1 1FFF1h 1FFF0h 0 D1 10M 10 Date 0 0 0 10 Hours Day Calibration BMB1 BMB0 Rev. 1.0 (April, 2002) RB0 Watchdog AL Month 01-12 AL 10 Date Alarm Date AL Date 01-31 AL 10 Hours Alarm Hours AL Hours 00-23 AL 10 Minutes Alarm Minutes AL Minutes 00-59 AL 10 Seconds Alarm Seconds AL Seconds 00-59 100 Years Century 00-99 AF 0 BL Y Y Keys : S = SIGN BIT FT = FREQUENCY TEST BIT R = READ BIT W = WRITE BIT ST = STOP BIT 0 = MUST BE SET TO ’0’ Y = ’1’OR ’0‘ BL = BATTERY LOW (READ ONLY) URL : www.hbe.co.kr RB1 Alarm Month 1000 Years WDF Control Y Y Flag AF = ALARM FLAG (READ ONLY) WDS = WATCHDOG STEERING BIT BMB0-BMB4 = WATCHDOG MULTIPLIER BITS RB0-RB1 = WATCHDOG RESOLUTION BITS AFE = ALARM FLAG ENABLE ABE = ALARM IN BATTERY BACK-UP MODE ENABLE RPT1-RPT5 = ALARM REPEAT MODE BIT S WDF = WATCHDOG FLAG (READ ONLY) 9 HANBit Electronics Co.,Ltd HANBit HMNR1288D(V) CLOCK OPERATIONS The HMNR1288D(V) offers 16 internal registers which contain TIMEKEEPER, and Control data. These registers are memory locations which contain external (user accessible) and internal copies of the data. The external copies are independent of internal functions except that they are updated periodically by the simultaneous transfer of the incremented internal copy. TIMEKEEPER Registers store data in BCD. Control Registers store data in Binary Format. Setting the Alarm Clock Registers 1FFF6h-1FFF2h contain the alarm settings. The alarm can be configured to go off at a prescribed time on a specific month, date, hour, minute, or second or repeat every month, day, hour, minute, or second. It can also be programmed to go off while the HMNR1288D(V) is in the battery back-up to serve as a system wake-up call. Bits RPT5RPT1 put the alarm in the repeat mode of operation. Table 12, page 19 shows the possible configurations. Codes not listed in the table default to the once per second mode to quickly alert the user of an incorrect alarm setting. Note: User must transition address (or toggle Chip Enable) to see Flag Bit change. When the clock information matches the alarm clock settings based on the match criteria defined by RPT5-RPT1, the AF (Alarm Flag) is set. If AFE (Alarm Flag Enable) is also set, the alarm condition activates the IRQ/FT pin. To disable alarm, write ’0’to the Alarm Date register and RPT1-5. The IRQ/FT output is cleared by a READ to the Flags Register as shown in Figure 6. A subsequent READ of the Flags Register is necessary to see that the value of the Alarm Flag has been reset to ’0.’ The IRQ/FT pin can also be activated in the battery back-up mode. The IRQ/FT will go low if an alarm occurs and both ABE (Alarm in Batter y Back-up Mode Enable) and AFE are set. The ABE and AFE Bits are reset during power-up, therefore an alarm generated during power-up will only set AF. The user can read the Flag Register at system boot-up to determine if an alarm was generated while the HMNR1288D(V) was in the deselect mode during power-up. Figure 7, illustrates the back-up mode alarm timing. Figure 6. Alarm Interrupt Reset Waveform Alarm Repeat Mode RPT5 RPT4 RPT3 RPT2 RPT1 Alarm Activated 1 1 1 1 1 Once per Second 1 1 1 1 0 Once per Minute 1 1 1 0 0 Once per Hour 1 1 0 0 0 Once per Day 1 0 0 0 0 Once per Month 0 0 0 0 0 Once per Year URL : www.hbe.co.kr Rev. 1.0 (April, 2002) 11 HANBit Electronics Co.,Ltd HANBit HMNR1288D(V) Figure 7. Back-up Mode Alarm Waveforms Watchdog Timer The watchdog timer can be used to detect an out-of-control microprocessor. The user programs the watchdog timer by setting the desired amount of time-out into the Watchdog Register, address 1FFF7h. Bits BMB4-BMB0 store a binary multiplier and the two lower order bits RB1-RB0 select the resolution, where 00 = 1/16 second, 01 = 1/4 sec -ond, 10 = 1 second, and 11 = 4 seconds. The amount of time-out is then determined to be the multiplication of the five-bit multiplier value with the resolution. (For example: writing 00001110 in the Watchdog Register = 3*1 or 3 seconds). Note: Accuracy of timer is a function of the selected resolution. If the processor does not reset the timer within the specified period, the HMNR1288D(V) sets the WDF (Watchdog Flag) and generates a watchdog interrupt or a microprocessor reset. WDF is reset by reading the Flags Register (Address 1FFF0h). The most significant bit of the Watchdog Register is the Watchdog Steering Bit (WDS). When set to a ’0,’the watchdog will activate the IRQ/FT pin when timed-out. When WDS is set to a ’1,’the watchdog will output a negative pulse on the RST pin for 40 to 200 ms. The Watchdog register and the FT Bit will reset to a ’0’at the end of a Watchdog time-out when the WDS Bit is set to a ’1.’The watchdog timer can be reset by two methods: 1. a transition (high-to-low or low-to-high) can be applied to the Watchdog Input pin (WDI); 2. the microprocessor can perform a WRITE of the Watchdog Register. The time-out period then starts over. The WDI pin should be tied to VSS if not used. The watchdog will be reset on each transition (edge) se en by the WDI pin. In the order to perform a software reset of the watchdog timer, the original time -out period can be written into the Watchdog Register, effectively restarting the count-down cycle. Should the watchdog timer time-out, and the WDS Bit is programmed to output an interrupt, a value of “00h” needs to be written to the Watchdog Register in order to clear the IRQ/FT pin. This will also disable the watchdog function until it is again programmed correctly. A READ of the Flags Register will reset the Watchdog Flag (Bit D7; Register 1FFF0h). The watchdog function is automatically disabled upon power-down and the Watchdog Register is cleared. If the watchdog function is set to output to the IRQ/FT pin and the frequency test function is activated, the watchdog or alarm function prevails and the frequency test function is denied. Power-on Reset The HMNR1288D(V) continuously monitors VCC. When VCC falls to the power fail detect trip point, the RST pulls low (open drain) and remains low on power-up for tREC after VCC passes VPFD (max). The RST pin is an open drain output and an appro-priate pull-up resistor to VCC should be chosen to control the rise time. Initial Power-on Defaults Upon application of power to the device, the following register bits are set to a ’0’state: WDS, BMB0-BMB4, RB0,RB1, AFE, ABE, W, R and FT. URL : www.hbe.co.kr Rev. 1.0 (April, 2002) 12 HANBit Electronics Co.,Ltd HANBit HMNR1288D(V) Reading the Clock Updates to the TIMEKEEPER registers should be halted before clock data is read to prevent reading data in transition. The TIMEKEEPER cells in the RAM array are only data registers and not the actual clock counters, so updating the registers can be halted without disturbing the clock itself. Updating is halted when a ’1’is written to the READ Bit, D6 in the Control Register (1FFF8h). As long as a ’1’remains in that position, updating is halted. After a halt is issued, the registers reflect the count; that is, the day, date, and time that were current at the moment the halt command was is -sued. All of the TIMEKEEPER registers are updated simultaneously. A halt will not interrupt an update in progress. Updating occurs approximately 1 second after the READ Bit is reset to a ’0.’ Setting the Clock Bit D7 of the Control Register (1FFF8h) is the WRITE Bit. Setting the WRITE Bit to a ’1,’like the READ Bit, halts updates to the TIMEKEEPER reg-isters. The user can then load them with the correct day, date, and time data in 24-hour BCD format. Resetting the WRITE Bit to ’0’then transfers the values of all time registers (1FFFh-1FFF9h, 1FFF1h) to the actual TIMEKEEPER counters and allows normal operation to resume. After the WRITE Bit is reset, the next clock update will occur approximately one second later. Note: Upon power-up following a power failure, both the WRITE Bit and the READ Bit will be reset to ’0.’ Stopping and Starting the Oscillator The oscillator may be stopped at any time. If the device is going to spend a significant amount of time on the shelf, the oscillator can be turned off to minimize current drain on the battery. The STOP Bit is located at Bit D7 within the Seconds Register (1FFF9h). Setting it to a ’1’stops the oscillator. When reset to a ’0,’the HMNR1288D(V) oscillator starts within one second. Note : It is not necessary to set the WRITE Bit when setting or resetting the STOP Bit (ST). Calibrating the Clock The HMNR1288D(V) is driven by a quartz controlled oscillator with a nominal frequency of 32,768Hz. The devices are factory calibrated at 25° C and tested for accuracy. Clock accuracy will not exceed 35 ppm (parts per million) oscillator frequency error at 25° C, which equates to about ± 1.53 minutes per month . When the Calibration circuit is properly employed, accuracy improves to better than +1/– 2 ppm at 25° C. The oscillation rate of crystals changes with temperature. The HMNR1288D(V) design employs periodic counter correction. The calibration circuit adds or subtracts counts from the oscillator divider circuit at the divide by 256 stage. The number of times pulses are blanked (subtracted, negative calibration) or split (added, positive calibration) depends upon the value loaded into the five Calibration bits found in the Control Register. Adding counts speeds the clock up, subtracting counts slows the clock down. The Calibration bits occupy the five lower order bits (D4 -D0) in the Control Register 1FFF8h. These bits can be set to represent any value between 0 and 31 in binary form. Bit D5 is a Sign Bit; ’1’indicates positive calibration, ’0’indicates negative calibration. Calibration occurs within a 64 minute cycle. The first 62 minutes in the cycle may, once per minute, have one second either shortened by 128 or lengthened by 256 oscillator cycles. If a binary ’1’is loaded into the register, only the first 2 minutes in the 64 minute cycle will be modified; if a binary 6 is loaded, the first 12 will be affected, and so on. Therefore, each calibration step has the effect of adding 512 or subtracting 256 oscillator cycles for every 125, 829, 120 actual oscillator cycles, that is +4.068 or – 2.034 ppm of adjustment per calibration step in the calibration register. Assuming that the oscillator is running at exactly 32,768Hz, each of the 31 increments in the Calibration byte would represent +10.7 or – 5.35 seconds per month which corresponds to a total range of +5.5 or – 2.75 minutes per month. Two methods are available for ascertaining how much calibration a given HMNR1288D(V) may require. The first involves setting the clock, letting it run for a month and comparing it to a known accurate reference and recording deviation over a fixed period of time. This allows the designer to give the end user the ability to calibrate the clock as the environment requires, even if the final product is packaged in a non-user serviceable enclosure. The designer could provide a simple utility that accesses the Calibration byte. The second approach is better suited to a manufacturing environment, and involves the use of the IRQ/FT pin. The pin will toggle at 512Hz, when the Stop Bit (ST, D7 of 1FFF9h) is ’0,’the Frequency Test Bit (FT, D6 of 1FFFCh) is ’1,’the Alarm Flag Enable Bit (AFE, D7 of 1FFF6h) is ’0,’and the Watchdog Steering Bit (WDS, D7 of 1FFF7h) is ’1’or the Watchdog Register (1FFF7h = 0) is reset. Note: A 4 second settling time must be allowed before reading the 512Hz output. Any deviation from 512Hz indicates the degree and direction of oscillator frequency shift at the test temperature. For example, a reading of 512.010124Hz would indicate a +20 ppm oscillator frequency error, requiring a – 10 (WR001010) to be loaded into the Calibration Byte for correction. Note that setting or changing the Calibration Byte does not affect the Frequency test output frequency. The IRQ/FT pin is an open drain output which requires a pull-up resistor for proper operation. A 500-10kW resistor is recommended in order to control the rise time. The FT Bit is cleared on power up. URL : www.hbe.co.kr Rev. 1.0 (April, 2002) 13 HANBit Electronics Co.,Ltd HANBit HMNR1288D(V) Battery Low Warning The HMNR1288D(V) automatically performs battery voltage monitoring upon power-up and at factory-programmed time intervals of approximately 24 hours. The Battery Low (BL) Bit, Bit D4 of Flags Register 1FFF0h, will be asserted if the battery voltage is found to be less than approximately 2.5V. The BL Bit will remain asserted until completion of battery replacement and subsequent battery low monitoring tests, either during the next power-up sequence or the next scheduled 24hour interval. If a battery low is generated during a power -up sequence, this indicates that the battery is below approximately 2.5V and may not be able to maintain data integrity in the SRAM. Data should be conside red suspect and verified as correct. A fresh battery should be installed. If a battery low indication is generated during the 24-hour interval check, this indicates that the battery is near end of life. However, data is not compromised due to the fact that a nominal VCC is supplied. In order to insure data integrity during Power Supply Decoupling and Undershoot Protection Note: ICC transients, including those produced by output switching, can produce voltage fluctuations, resulting in spikes on the VCC bus. These transients can be reduced if capacitors are used to store energy which stabilizes the VCC bus. The energy stored in the bypass capacitors will be released as low going spikes are generated or energy will be absorbed when overshoots occur. A ceramic bypass capacitor value of 0.1uF is recommended in order to provide the needed filtering. In addition to transients that are caused by normal SRAM operation, power cycling can generate negative voltage spikes on VCC that drive it to values below VSS by as much as one volt. These negative spikes can cause data corruption in the SRAM while in battery backup mode. To protect from these voltage spikes, ST recommends connecting a schottky diode from VCC to VSS (cathode connected to VCC, anode to VSS). (Schottky diode 1N5817 is recommended for through hole and MBRS120T3 is recommended for surface mount). Figure 8. Supply Voltage Protection URL : www.hbe.co.kr Rev. 1.0 (April, 2002) 14 HANBit Electronics Co.,Ltd HANBit HMNR1288D(V) PACKAGE DIMENSION Dimension Min Max A 1.470 1.500 B 0.710 0.740 C 0.365 0.375 D 0.012 - E 0.008 0.013 F 0.590 0.630 G 0.017 0.023 H 0.090 0.110 I 0.075 0.110 J 0.120 0.150 J A H I G B C D E F ORDERING INFORMATION HM NR 1288 D V - 70 I Operating Temperature : I = Industrial Temp.( -40~80℃ ) Blank = Commercial Temp( 0~70℃ ) Speed options : 70 = 70 ns 85 = 85 ns Operating Voltage : Blank = 5V V = 3.3V Dip type package Device : 128K x 8 Nonvolatile Timekeeping SRAM HANBit Memory Module URL : www.hbe.co.kr Rev. 1.0 (April, 2002) 15 HANBit Electronics Co.,Ltd