HANBIT HMS12832M4G-10

HANBit
HMS12832M4G/Z4
SRAM MODULE 512KByte (128K x 32-Bit), 64PIN SIMM / ZIP
Part No. HMS12832M4G, HMS12832Z4
GENERAL DESCRIPTION
The HMS12832M4G/Z4 is a high-speed static random access memory (SRAM) module containing 131,072 words organized
in a x32-bit configuration. The module consists of four 128K x 8 SRAMs mounted on a 64-pin, single-sided, FR4-printed circuit
board.
PD0 and PD1 identify the module’s density allowing interchangeable use of alternate density, industry- standard modules. Four
chip enable inputs, (/CE1, /CE2, /CE3 and /CE4) are used to enable the module’s 4 bytes independently. Output enable(/OE)
and write enable(/WE) can set the memory input and output.
Data is written into the SRAM memory when write enable (/WE) and chip enable (/CE) inputs are both LOW.
Reading is
accomplished when /WE remains HIGH and /CE and output enable (/OE) are LOW.
For reliability, this SRAM module is designed as multiple power and ground pin. All module components may be powered from
a single +5V DC power supply and all inputs and outputs are fully TTL-compatible.
FEATURES
w Access times : 10, 12, 15 and 20ns
PIN ASSIGNMENT
w High-density 512KByte design
w High-reliability, high-speed design
w Single + 5V ±0.5V power supply
PIN
SYMBOL
PIN
SYMBOL
PIN
SYMBOL
PIN
SYMBOL
w Easy memory expansion with /CE and
1
Vss
17
A2
33
/CE4
49
A4
/OE functions
2
NC
18
A9
34
/CE3
50
A11
3
NC
19
DQ12
35
NC
51
A5
4
DQ0
20
DQ4
36
A16
52
A12
5
DQ8
21
DQ13
37
/OE
53
Vcc
6
DQ1
22
DQ5
38
Vss
54
A13
7
DQ9
23
DQ14
39
DQ24
55
A6
8
DQ2
24
DQ6
40
DQ16
56
DQ20
9
DQ10
25
DQ15
41
DQ25
57
DQ28
w All inputs and outputs are TTL-compatible
w Industry-standard pinout
w FR4-PCB design
OPTIONS MARKING
w Timing
8ns access
- 8
10
DQ3
26
DQ7
42
DQ17
58
DQ21
10ns access
-10
11
DQ11
27
Vss
43
DQ26
59
DQ29
12ns access
-12
12
Vcc
28
/WE
44
DQ18
60
DQ22
15ns access
-15
13
A0
29
A15
45
DQ27
61
DQ30
20ns access
-20
14
A7
30
A14
46
DQ19
62
DQ23
15
A1
31
/CE2
47
A3
63
DQ31
16
A8
32
/CE1
48
A10
64
Vss
w Packages
64-pin SIMM
M
64-pin ZIP
Z
URL: www.hbe.co.kr
Rev. 1.0 (September / 2002)
SIMM
TOP VIEW
1
HANBit Electronics Co.,Ltd.
HANBit
HMS12832M4G/Z4
FUNCTIONAL BLOCK DIAGRAM
DQ0 - DQ31
A0 - A16
32
17
A0-16
/WE
DQ 0-7
U1
/OE
/CE
/CE1
A0-16
/WE
DQ 8-15
U2
/OE
/CE
/CE2
A0-16
/WE
DQ16-23
U3
/OE
/CE
/CE3
A0-16
/WE
/WE
/OE
/OE
DQ24-31
U4
/CE
PRESENCE-DETECT
/CE4
PD0 = Open
PD1 = Open
TRUTH TABLE
MODE
/OE
/CE
/WE
DQ
POWER
STANDBY
X
H
X
HIGH-Z
STANDBY
NOT SELECTED
H
L
H
HIGH-Z
ACTIVE
READ
L
L
H
Dout
ACTIVE
WRITE
X
L
L
Din
ACTIVE
URL: www.hbe.co.kr
Rev. 1.0 (September / 2002)
2
HANBit Electronics Co.,Ltd.
HANBit
HMS12832M4G/Z4
ABSOLUTE MAXIMUM RATINGS*
PARAMETER
SYMBOL
RATING
VIN,OUT
-0.5V to Vcc+0.5V
Voltage on Vcc Supply Relative to Vss
VCC
-0.5V to +7.0V
Power Dissipation
PD
4.0W
o
-65 C to +150oC
0oC to +70oC
Voltage on Any Pin Relative to Vss
Storage Temperature
TSTG
Operating Temperature
TA
w Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at these or any other conditions above those indicated
in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS ( TA=0 to 70 o C )
PARAMETER
*
SYMBOL
MIN
TYP.
MAX
Supply Voltage
VCC
4.5V
5.0V
5.5V
Ground
VSS
0
0
0
Input High Voltage
VIH
2.2
-
Vcc+0.5V**
Input Low Voltage
VIL
-0.5*
-
0.8V
VIL(Min.) = -2.0V ac (Pulse Width ≤ 10ns) for I ≤ 20 mA
** VIH(Min.) = Vcc+2.0V ac (Pulse Width ≤ 10ns) for I ≤ 20 mA
DC AND OPERATING CHARACTERISTICS (1)(0oC ≤ TA ≤ 70 oC ; Vcc = 5V ± 10% )
PARAMETER
TEST CONDITIONS
Input Leakage Current
VIN=Vss to Vcc
/CE=VIH or /OE =VIH or /WE=VIL
Output Leakage Current
VOUT=Vss to VCC
SYMBOL
MIN
MAX
UNITS
ILI
-8
8
µA
IL0
-8
8
µA
2.4
Output High Voltage
IOH = -4.0mA
VOH
Output Low Voltage
IOL = 8.0mA
VOL
V
0.4
V
* Vcc=5.0V, Temp=25 oC
DC AND OPERATING CHARACTERISTICS (2)
DESCRIPTION
Power Supply
Current:Operating
Power Supply
Current:Standby
TEST CONDITIONS
SYMBOL
Rev. 1.0 (September / 2002)
UNIT
-12
-15
-20
ICC
300
292
280
mA
ISB
120
120
120
mA
ISB1
20
20
20
mA
Min. Cycle, 100% Duty
/CE=VIL, VIN=VIH or VIL,
IOUT=0mA
Min. Cycle, /CE=VIH
f=0MHZ, /CE≥VCC-0.2V,
VIN≥ VCC-0.2V or VIN≤0.2V
URL: www.hbe.co.kr
MAX
3
HANBit Electronics Co.,Ltd.
HANBit
HMS12832M4G/Z4
CAPACITANCE (TA =25 oC , f= 1.0Mhz)
DESCRIPTION
Input /Output Capacitance
Input Capacitance
TEST CONDITIONS
SYMBOL
MAX
UNIT
VI/O=0V
CI/O
32
pF
CIN
24
pF
VIN=0V
* NOTE : Capacitance is sampled and not 100% tested
AC CHARACTERISTICS (0oC ≤ TA ≤ 70 oC ; Vcc = 5V ± 0.5V, unless otherwise specified)
Test conditions
PARAMETER
VALUE
Input Pulse Level
0V to 3V
Input Rise and Fall Time
3ns
Input and Output Timing Reference Levels
1.5V
Output Load
See below
Output Load (B)
Output Load (A)
for tHZ, tLZ, tWHZ, tOW, tOLZ & tOHZ
VL=1.5V
+3.3V
50Ω
DOUT
319Ω
DOUT
Z0=50Ω
353Ω
30pF
5pF*
READ CYCLE
-12
PARAMETER
-15
-20
SYMBOL
UNIT
MIN
MAX
MAX
MAX
tRC
Address Access Time
tAA
12
15
20
ns
Chip Select to Output
tCO
12
15
20
ns
Output Enable to Output
tOE
6
7
9
ns
Output Enable to Low-Z Output
tOLZ
0
0
0
ns
Chip Enable to Low-Z Output
tLZ
3
3
3
ns
Output Disable to High-Z Output
tOHZ
0
6
0
7
0
9
ns
Chip Disable to High-Z Output
tHZ
0
6
0
7
0
9
ns
Output Hold from Address Change
tOH
3
3
3
ns
Chip Select to Power Up Time
tPU
0
0
0
ns
Chip Select to Power Down Time
tPD
-
Rev. 1.0 (September / 2002)
4
15
MIN
Read Cycle Time
URL: www.hbe.co.kr
12
MIN
12
20
15
ns
20
HANBit Electronics Co.,Ltd.
ns
HANBit
HMS12832M4G/Z4
WRITE CYCLE
PARAMETER
-12
SYMBOL
MIN
-15
MAX
MIN
-20
MAX
MIN
MAX
UNIT
Write Cycle Time
tWC
12
15
20
ns
Chip Select to End of Write
tCW
8
10
12
ns
Address Set-up Time
tAS
0
0
0
ns
Address Valid to End of Write
tAW
8
9
10
ns
Write Pulse Width
tWP
8
9
10
ns
Write Recovery Time
tWR
0
Write to Output High-Z
tWHZ
0
Data to Write Time Overlap
tDW
6
7
8
ns
Data Hold from Write Time
tDH
0
0
0
ns
End of Write to Output Low-Z
tOW
3
3
3
ns
URL: www.hbe.co.kr
Rev. 1.0 (September / 2002)
5
0
6
0
0
7
0
ns
9
HANBit Electronics Co.,Ltd.
ns
HANBit
HMS12832M4G/Z4
TIMING DIAGRAMS
NOTES(READ CYCLE)
1.
WE is high for read cycle.
2.
All read cycle timing is referenced from the last valid address to the first transition address.
3.
tHZ and tOHZ are defined as the time at which the outputs achieve the open circuit condition and are not referenced
to VOH or VOL levels.
4.
At any given temperature and voltage condition, tHZ(Max.) is less than tLZ(Min.) both for a given device and from
5.
Transition is measured ± 200mV from steady state voltage with Load(B). This parameter is sampled and not 100%
device to device.
tested.
6.
Device is continuously selected with CS=VIL.
7.
Address valid prior to coincident with CS transition low.
8.
For common I/O applications, minimization or elimination of bus contention conditions is necessary during read and
write cycle.
URL: www.hbe.co.kr
Rev. 1.0 (September / 2002)
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URL: www.hbe.co.kr
Rev. 1.0 (September / 2002)
HMS12832M4G/Z4
7
HANBit Electronics Co.,Ltd.
HANBit
HMS12832M4G/Z4
NOTES(WRITE CYCLE)
1.
ll write cycle timing is referenced from the last valid address to the first transition address.
2.
A write occurs during the overlap of a low CS and WE. A write begins at the latest transition CS going low and WE
going low ; A write ends at the earliest transition CS going high or WE going high. tWP is measured from the
beginning of write to the end of write.
3.
tCW is measured from the later of CS going low to end of write.
4.
tAS is measured from the address valid to the beginning of write.
5.
tWR is measured from the end of write to the address change. tWR applied in case a write ends as CS or WE going
high.
6.
If OE, CS and WE are in the Read Mode during this period, the I/O pins are in the output low-Z state. Inputs of
opposite phase of the output must not be applied because bus contention can occur.
7.
For common I/O applications, minimization or elimination of bus contention conditions is necessary during read and
write cycle.
8.
If CS goes low simultaneously with WE going or after WE going low, the outputs remain high impedance state.
9.
Dout is the read data of the new address.
10. When CS is low : I/O pins are in the output state. The input signals in the opposite phase leading to the output should
not be applied.
FUNCTIONAL DESCRIPTION
/CE
/WE
/OE
MODE
I/O PIN
SUPPLY CURRENT
H
X*
X
Not Select
High-Z
l SB, l SB1
L
H
H
Output Disable
High-Z
lCC
L
H
L
Read
DOUT
lCC
L
L
X
Write
DIN
lCC
Note: X means Don't Care
URL: www.hbe.co.kr
Rev. 1.0 (September / 2002)
8
HANBit Electronics Co.,Ltd.
HANBit
HMS12832M4G/Z4
PACKAGING INFORMATION
UNIT : mm
SIMM Design
2.54 mm MIN
0.25 mm MAX
1.27
Gold : 1.04±0.10 mm
Solder : 0.914±0.10 mm
1.27±0.08 mm
(Solder & Gold Plating Lead)
URL: www.hbe.co.kr
Rev. 1.0 (September / 2002)
9
HANBit Electronics Co.,Ltd.
HANBit
HMS12832M4G/Z4
ZIP Design
< FRONT SIDE>
1.27 ± 0.20
1.7±0.30 mm
2.54 mm
URL: www.hbe.co.kr
Rev. 1.0 (September / 2002)
10
HANBit Electronics Co.,Ltd.
HANBit
HMS12832M4G/Z4
ORDERING INFORMATION
Part Number
Density
Org.
Package
HMS12832M4G-10
512KByte
128KX 32bit
64 Pin-SIMM
HMS12832M4G-12
512KByte
128KX 32bit
HMS12832M4G-15
512KByte
HMS12832M4G-20
Component
Vcc
Access Time
4EA
5V
10ns
64 Pin-SIMM
4EA
5V
12ns
128KX 32bit
64 Pin-SIMM
4EA
5V
15ns
512KByte
128KX 32bit
64 Pin-SIMM
4EA
5V
20ns
HMS12832Z4-10
512KByte
128KX 32bit
64 Pin-ZIP
4EA
5V
10ns
HMS12832Z4-12
512KByte
128KX 32bit
64 Pin-ZIP
4EA
5V
12ns
HMS12832Z4-15
512KByte
128KX 32bit
64 Pin-ZIP
4EA
5V
15ns
HMS12832Z4-20
512KByte
128KX 32bit
64 Pin-ZIP
4EA
5V
20ns
URL: www.hbe.co.kr
Rev. 1.0 (September / 2002)
11
Number
HANBit Electronics Co.,Ltd.