HANBIT HMS25632M8G-15

HANBit
HMS25632M8G/Z8
HAN
SRAM MODULE 1Mbyte (256K x 32-Bit)
BIT
Part No.
HMS25632M8, HMS25632Z8
GENERAL DESCRIPTION
The HMS25632M8G/Z8 is a high-speed static random access memory (SRAM) module containing 262,144
words organized in a x32-bit configuration. The module consists of eight 256K x 4 SRAMs mounted on a 64-pin,
double-sided, FR4-printed circuit board.
PD0 and PD1 identify the module’s density allowing interchangeable use of alternate density, industry- standard
modules. Four chip enable inputs, (/CE1, /CE2, /CE3 and /CE4) are used to enable the module’s 4 bytes
independently. Output enable (/OE) and write enable (/WE) can set the memory input and output.
Data is written into the SRAM memory when write enable (/WE) and chip enable (/CE) inputs are both LOW.
Reading is accomplished when /WE remains HIGH and /CE and output enable (/OE) are LOW.
For reliability, this SRAM module is designed as multiple power and ground pin. All module components may be
powered from a single +5V DC power supply and all inputs and outputs are fully TTL-compatible.
FEATURES
PIN ASSIGNMENT
Š Part Identification
-HMS25632M8G : 64Pin SIMM Design, Gold Plate Lead
-HMS25632Z8 : 64Pin ZIP Design
→ Pin-Compatible with the HMS25632M8G
Š Access times: 8, 10, 12, 15and 20ns
Š High-density 1MByte design
Š High-reliability, high-speed design
Š Single + 5V ±0.5V power supply
Š Easy memory expansion with /CE and /OE functions
Š All inputs and outputs are TTL-compatible
Š Industry-standard pinout
OPTIONS
MARKING
Š Timing
8ns access
- 8
10ns access
-10
12ns access
-12
15ns access
-15
20ns access
-20
Š Packages
64-pin SIMM
M
64-pin ZIP
Z
PD0
DQ0
DQ1
DQ2
DQ3
Vcc
A7
A8
A9
DQ4
DQ5
DQ6
DQ7
/WE
A14
/CE1
/CE3
A16
Vss
DQ16
DQ17
DQ18
DQ19
A10
A11
A12
A13
DQ20
DQ21
DQ22
DQ23
Vss
1
3
5
7
9
11
13
15
17
19
21
23
25
27
29
31
33
35
37
39
41
43
45
47
49
51
53
55
57
59
61
63
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
32
34
36
38
40
42
44
46
48
50
52
54
56
58
60
62
64
ZIP
TOP VIEW
1
Vss
PD1
DQ8
DQ9
DQ10
DQ11
A0
A1
A2
DQ12
DQ13
DQ14
DQ15
Vss
A15
/CE2
/CE4
A17
/OE
DQ24
DQ25
DQ26
DQ27
A3
A4
A5
Vcc
A6
DQ28
DQ29
DQ30
DQ31
PD0 = Vss
PD1 = Vss
HANBit Electronics Co.,Ltd.
HANBit
HMS25632M8G/Z8
FUNCTIONAL BLOCK DIAGRAM
DQ0 - DQ31
A0 - A17
32
18
A0-17
A0-17
DQ 0-3
DQ 4-7
/WE
/WE
U1
/OE
U5
/OE
/CE
/CE
/CE1
A0-17
A0-17
DQ 8-11
DQ12-15
/WE
/WE
U2
/OE
U6
/OE
/CE
/CE
/CE2
A0-17
A0-17
DQ16-19
DQ20-23
/WE
/WE
U3
/OE
U7
/OE
/CE
/CE
/CE3
A0-17
A0-17
DQ24-27
/WE
/WE
/OE
/OE
DQ28-31
/WE
U4
U8
/OE
/CE
/CE
/CE4
PRESENCE-DETECT
PD0 = Vss
PD1 = Vss
TRUTH TABLE
MODE
/OE
/CE
/WE
OUTPUT
POWER
STANDBY
X
H
X
HIGH-Z
STANDBY
NOT SELECTED
H
L
H
HIGH-Z
ACTIVE
READ
L
L
H
Dout
ACTIVE
WRITE
X
L
L
Din
ACTIVE
2
HANBit Electronics Co.,Ltd.
HANBit
HMS25632M8G/Z8
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATING
VIN,OUT
-0.5V to Vcc+0.5V
Voltage on Vcc Supply Relative to Vss
VCC
-0.5V to +7.0V
Power Dissipation
PD
8W
TSTG
-65oC to +150oC
Voltage on Any Pin Relative to Vss
Storage Temperature
0oC to +70oC
Operating Temperature
TA
Š Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at these or any other conditions above those indicated
in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS
PARAMETER
*
( TA=0 to 70 o C )
SYMBOL
MIN
TYP.
MAX
Supply Voltage
VCC
4.5V
5.0V
5.5V
Ground
VSS
0
0
0
Input High Voltage
VIH
2.2
-
Vcc+0.5V**
Input Low Voltage
VIL
-0.5*
-
0.8V
VIL(Min.) = -2.0V (Pulse Width ≤ 10ns) for I ≤ 20 mA
** VIH(Min.) = Vcc+2.0V (Pulse Width ≤ 10ns) for I ≤ 20 mA
DC AND OPERATING CHARACTERISTICS (1)(0oC ≤ TA ≤ 70 oC ; Vcc = 5V ± 0.5V )
PARAMETER
Input Leakage Current
Output Leakage Current
TEST CONDITIONS
VIN = Vss to Vcc
/CE=VIH or /OE =VIH or /WE=VIL
VOUT=Vss to VCC
SYMBO
L
MIN
MAX
UNITS
ILI
-2
2
µA
IL0
-2
2
µA
2.4
Output High Voltage
IOH = -4.0Ma
VOH
Output Low Voltage
IOL = 8.0mA
VOL
V
0.4
V
* Vcc=5.0V, Temp=25 oC
DC AND OPERATING CHARACTERISTICS (2)
MAX
DESCRIPTION
Power Supply
Current: Operating
Power Supply
Current: Standby
TEST CONDITIONS
Min. Cycle, 100% Duty
/CE=VIL, VIN=VIH or VIL,
IOUT=0mA
SYMBOL
-12
-15
-20
UNIT
ICC
70
68
65
mA
Min. Cycle, /CE=VIH
ISB
30
30
30
mA
f=0MHZ, /CE≥VCC-0.2V,
VIN≥ VCC-0.2V or VIN≤0.2V
ISB1
5
5
5
mA
3
HANBit Electronics Co.,Ltd.
HANBit
HMS25632M8G/Z8
CAPACITANCE
DESCRIPTION
TEST CONDITIONS
SYMBOL
MAX
UNIT
Input /Output Capacitance
VI/O=0V
CI/O
8
pF
Input Capacitance
VIN=0V
CIN
6
pF
* NOTE : Capacitance is sampled and not 100% tested
AC CHARACTERISTICS (0oC ≤ TA ≤ 70 oC ; Vcc = 5V ± 0.5V, unless otherwise specified)
TEST CONDITIONS
PARAMETER
VALUE
Input Pulse Level
0 to 3V
Input Rise and Fall Time
3ns
Input and Output Timing Reference Levels
1.5V
Output Load
See below
Output
Load
Output Load (B)
for tHZ, tLZ, tWHZ, tOW, tOLZ & tOHZ
+5V
+5V
480Ω
480Ω
DOUT
255Ω
DOUT
30pF*
255Ω
5pF*
READ CYCLE
-12
PARAMETER
-15
-20
SYMBOL
UNIT
MIN
MAX
12
MIN
MAX
15
MIN
MAX
20
ns
Read Cycle Time
tRC
Address Access Time
tAA
12
15
20
ns
Chip Select to Output
tCO
12
15
20
ns
Output Enable to Output
tOE
6
7
9
ns
Output Enable to Low-Z Output
tOLZ
0
0
0
ns
Chip Enable to Low-Z Output
tLZ
3
3
3
ns
Output Disable to High-Z Output
tOHZ
0
6
0
7
0
9
ns
Chip Disable to High-Z Output
tHZ
0
6
0
7
0
9
ns
Output Hold from Address Change
tOH
3
4
3
3
ns
HANBit Electronics Co.,Ltd.
HANBit
HMS25632M8G/Z8
Chip Select to Power Up Time
tPU
-
Chip Select to Power Down Time
tPD
-
0
0
12
ns
15
20
ns
WRITE CYCLE
PARAMETER
-12
-15
-20
SYMBOL
UNIT
MIN
MAX
MIN
MAX
MIN
MAX
Write Cycle Time
tWC
12
15
20
ns
Chip Select to End of Write
tCW
8
9
10
ns
Address Set-up Time
tAS
0
0
0
ns
Address Valid to End of Write
tAW
8
9
10
ns
Write Pulse Width
tWP
8
9
10
ns
Write Recovery Time
tWR
0
0
0
ns
Write to Output High-Z
tWHZ
0
Data to Write Time Overlap
tDW
6
7
8
ns
Data Hold from Write Time
tDH
0
0
0
ns
End of Write to Output Low-Z
tOW
3
3
5
ns
6
0
7
0
9
ns
TIMING DIAGRAMS
TIMING WAVEFORM OF READ CYCLE( Address Controlled) ( /CE = /OE = VIL , /WE = VIH)
tRC
Address
tAA
tOH
Data out
Previous Data Valid
Data Valid
5
HANBit Electronics Co.,Ltd.
HANBit
HMS25632M8G/Z8
TIMING WAVEFORM OF READ CYCLE ( /CE Controlled )
tRC
Address
tHZ(3,4,5)
tAA
tCO
/CE
tLZ(4,5)
tOHZ
tOE
/OE
tOH
tOLZ
Data Out
High-Z
Vcc Supply
Current
Data Valid
tPD
tPU
lCC
50%
50%
lSB
Notes (Read Cycle)
1. /WE is high for read cycle.
2. All read cycle timing is referenced from the last valid address to first transition address.
3. tHZ and tOHZ are defined as the time at which the outputs achieve the open circuit condition and are not referenced to VOH or VOL
levels.
4. At any given temperature and voltage condition, t HZ (max.) is less than tLZ (min.) both for a given device and from device to device.
5. Transition is measured ± 200mV from steady state voltage with Load (B). This parameter is sampled and not 100% tested.
6. Device is continuously selected with /CE = VIL.
7. Address valid prior to coincident with /CE transition low.
TIMING WAVEFORM OF WRITE CYCLE (/OE = Clock )
tWC
Address
tAW
tWR(5)
/OE
tCW(3)
/CE
tWP(2)
tAS(4)
/WE
tDH
tDW
Data In
High-Z
Data Valid
tOHZ(6)
Data Out
High-Z
6
HANBit Electronics Co.,Ltd.
HANBit
HMS25632M8G/Z8
TIMING WAVEFORM OF WRITE CYCLE (/OE Low Fixed )
tWC
Address
tAW
tWR(5)
tCW(3)
/CE
tOH
tAS(4)
/WE
tWP(2)
tDW
tDH
High-Z
Data In
tWHZ(6,7)
tOW
(10)
(9)
High-Z(8)
Data Out
Notes (Write Cycle)
1. All write cycle timing is referenced from the last valid address to the first transition address.
2. A write occurs during the overlap of a low /CE and a low /WE. A write begins at the latest transition among
/CE going low and /WE going low: A write ends at the earliest transition among /CE going high and /WE going high.
tWP is measured from the beginning of write to the end of write.
3. tCW is measured from the later of /CE going low to the end of write.
4. tAS is measured from the address valid to the beginning of write.
5. tWR is measured from the end of write to the address change. tWR applied in case a write ends as /CE, or /WE going high.
6. If /OE,/CE and /WE are in the read mode during this period, the I/O pins are in the output low-Z state. Inputs of
opposite phase of the output must not be applied because bus contention can occur.
7. For common I/O applications, minimization or elimination of bus contention conditions is necessary during read and write cycle.
8. If /CE goes low simultaneously with /WE going low or after /WE going low, the outputs remain high impedance state.
9. DOUT is the read data of the new address.
10. When /CE is low: I/O pins are in the output state. The input signals in the opposite phase leading to the output should not be
applied.
FUNCTIONAL DESCRIPTION
/CE
/WE
/OE
MODE
I/O PIN
SUPPLY CURRENT
H
X*
X
Not Select
High-Z
l SB, l SB1
L
H
H
Output Disable
High-Z
lCC
L
H
L
Read
DOUT
lCC
L
L
X
Write
DIN
lCC
Note: X means Don't Care
7
HANBit Electronics Co.,Ltd.
HANBit
HMS25632M8G/Z8
PACKAGING DIMMENSIONS
SIMM Design
98.04 mm
10.16 mm
6.35 mm
16 mm
1
64
2.03 mm
1.02 mm
6.35 mm
6.35 mm
1.27 mm
3.34 mm
85.09 mm
2.54 mm
0.25 mm MAX
MIN
1.29±0.08 mm
Gold: 1.04±0.10 mm
1.27
Solder: 0.914±0.10 mm
(Solder & Gold Plating Lead)
ZIP Design
89 mm
CUT 1.5 mm
14 mm
64
1
6 mm
40 mm
2.54 mm
2 mm
90 mm
1.29±0.08 mm
2.5 mm
8
HANBit Electronics Co.,Ltd.
HANBit
HMS25632M8G/Z8
ORDERING INFORMATION
1
2
3
HMS
4
5
6
7
8
256 32 M 8G -15
15ns Access Time
HANBit
Component, Gold
Memory
Modules
SIMM
x32bit
SRAM
256K
1. - Product Line Identifier
HANBit ------------------------------------------------------ H
2. - Memory Modules
3. - SRAM
4. - Depth : 256K
5. - Width : x 32bit
6. - Package Code
SIMM ------------------------------------------------------- M
ZIP
------------------------------------------------------- Z
7. - Number of Memory Components ---8 , Gold Plate Lead --G
8. - Access time
8 ----------------------------------------------------------- 8ns
10 ----------------------------------------------------------- 10ns
12 ----------------------------------------------------------- 12ns
15 ----------------------------------------------------------- 15ns
20 ----------------------------------------------------------- 20ns
9
HANBit Electronics Co.,Ltd.