Semiconductor HA-2839 T C ODU R P E LET A-2539 O S H OB See 600MHz, Very High Slew Rate Operational Amplifier November 1996 Features Description • Low Supply Current. . . . . . . . . . . . . . . . . . . . . . . . 13mA The HA-2839 is a wideband, very high slew rate, operational amplifier featuring superior speed and bandwidth characteristics. Bipolar construction, coupled with dielectric isolation, delivers outstanding performance in circuits with a closed loop gain of 10 or greater. • Very High Slew Rate . . . . . . . . . . . . . . . . . . . . . 625V/µs • Open Loop Gain . . . . . . . . . . . . . . . . . . . . . . . . . . 25kV/V • Wide Gain-Bandwidth (AV ≥ 10) . . . . . . . . . . . . 600MHz A 625V/µs slew rate and a 600MHz gain bandwidth product ensure high performance in video and RF amplifier designs. Differential gain and phase are a low 0.03% and 0.03 degrees respectively, making the HA-2839 ideal for video applications. A full ±10V output swing, high open loop gain, and outstanding AC parameters, make the HA-2839 an excellent choice for high speed Data Acquisition Systems. • Full Power Bandwidth . . . . . . . . . . . . . . . . . . . . . 10MHz • Low Offset Voltage. . . . . . . . . . . . . . . . . . . . . . . . .0.6mV • Differential Gain/Phase . . . . . . . . . 0.03%/0.03 Degrees • Enhanced Replacement for EL2039 Applications The HA-2839 is available in commercial and industrial temperature ranges, and a choice of packages. For military grade product, refer to the HA-2839/883 data sheet. • Pulse and Video Amplifiers • Wideband Amplifiers Part Number Information • High Speed Sample-Hold Circuits • RF Oscillators PART NUMBER TEMP. RANGE (oC) PKG. NO. PACKAGE HA1-2839-5 0 to 75 14 Ld CERDIP F14.3 HA3-2839-5 0 to 75 14 Ld PDIP E14.3 HA3-2839-9 -40 to 85 14 Ld PDIP E14.3 Pinout HA-2839 (CERDIP, PDIP) TOP VIEW +IN 1 NC 2 14 -IN + - 13 NC V- 3 12 NC NC 4 11 NC NC 5 10 V+ NC 6 9 NC NC 7 8 OUT NOTE: No Connection (NC) pins may be tied to a ground plane for better isolation and heat dissipation. CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper IC Handling Procedures. Copyright © Harris Corporation 1996 3-1 File Number 2841.3 HA-2839 Absolute Maximum Ratings Thermal Information Voltage Between V+ and V- Terminals . . . . . . . . . . . . . . . . . . . . 35V Differential Input Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Output Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Thermal Resistance (Typical, Note 2) θJA (oC/W) θJC (oC/W) CERDIP Package . . . . . . . . . . . . . . . . 95 40 PDIP Package . . . . . . . . . . . . . . . . . . . 80 N/A Maximum Internal Quiescent Power Dissipation (Note 1) Maximum Junction Temperature (Ceramic Package) . . . . . . . . . 175oC Maximum Junction Temperature (Plastic Package) . . . . . . . . 150oC Maximum Storage Temperature Range . . . . . . . . . -65oC to 150oC Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . 300oC Operating Conditions Temperature Range HA-2839-5. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0oC to 75oC HA-2839-9. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40oC to 85oC Recommended Supply Voltage Range. . . . . . . . . . . . . ±7V to ±15V CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 1. Maximum power dissipation with load conditions must be designed to maintain the maximum junction temperature below 175oC for ceramic packages and below 150oC for plastic packages. 2. θJA is measured with the component mounted on an evaluation PC board in free air. Electrical Specifications VSUPPLY = ±15V, RL = 1kΩ, CL ≤ 10pF, Unless Otherwise Specified HA-2839-5, -9 TEMP. (oC) MIN TYP MAX UNITS 25 - 0.6 2 mV Full - 2 6 mV Average Offset Voltage Drift Full - 20 - µV/oC Bias Current (Note 13) 25 - 5 14.5 µA PARAMETER INPUT CHARACTERISTICS Offset Voltage (Note 13) Full - 8 20 µA 25 - 1 4 µA Full - - 8 µA Input Resistance 25 - 10 - kΩ Input Capacitance 25 - 1 - pF Common Mode Range Full ±10 - - V Input Noise Voltage (f = 1kHz, RSOURCE = 0Ω, Note 13) 25 - 6 - nV ⁄ Hz Input Noise Current (f = 1kHz, RSOURCE = 10kΩ, Note 13) 25 - 6 - pA ⁄ Hz 25 20 25 - kV/V Full 15 20 - kV/V Common-Mode Rejection Ratio (Notes 4, 13) Full 75 80 - dB Minimum Stable Gain 25 10 - - V/V Gain Bandwidth Product (Notes 5, 12, 13) 25 - 600 - MHz Output Voltage Swing (Notes 3, 13) Full ±10 - - V Output Current (Notes 3, 13) Full ±10 ±20 - mA Output Resistance 25 - 30 - Ω Full Power Bandwidth (Notes 3, 7) 25 8.7 10 - MHz Differential Gain (Notes 6, 11) 25 - 0.03 - % Differential Phase (Notes 6, 11) 25 - 0.03 - Degrees Harmonic Distortion (Notes 6, 13, 14) 25 - -79 - dBc Offset Current TRANSFER CHARACTERISTICS Large Signal Voltage Gain (Note 3) OUTPUT CHARACTERISTICS 3-2 HA-2839 Electrical Specifications VSUPPLY = ±15V, RL = 1kΩ, CL ≤ 10pF, Unless Otherwise Specified (Continued) HA-2839-5, -9 TEMP. (oC) MIN Rise Time 25 Overshoot 25 Slew Rate (Notes 3, 10, 13) Settling Time: 10V Step to 0.1% TYP MAX UNITS - 4 - ns - 20 - % 25 550 625 - V/µs 25 - 180 - ns Supply Current (Note 13) Full - 13 15 mA Power Supply Rejection Ratio (Notes 9, 13) Full 75 90 - dB PARAMETER TRANSIENT RESPONSE (Note 8) POWER REQUIREMENTS NOTES: 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. RL = 1kΩ, VO = ±10V, 0V to ±10V for slew rate. VCM = ±10V. VO = 90mV. AV = +10. Slew Rate Full Power Bandwidth guaranteed based on slew rate measurement using: FPBW = --------------------------- , V = 10V . 2πV PEAK PEAK Refer to Test Circuit section of data sheet. VSUPPLY = ±10V to ±20V. This parameter is not tested. The limits are guaranteed based on lab characterization, and reflect lot-to-lot variation. Differential gain and phase are measured with a VM700A video tester, using a NTC-7 composite VITS. AV = +100. See “Typical Performance Curves” for more information. VO = 2VP-P, f = 1MHz. Test Circuit and Waveforms IN + OUT - 900Ω NOTES: 15. VS = ±15V. 100Ω 16. AV = +10. 17. CL < 10pF. TEST CIRCUIT INPUT INPUT OUTPUT OUTPUT Input = 1V/Div.; Output = 5V/Div., 50ns/Div. Input = 10mV/Div.; Output = 100mV/Div.; 50ns/Div. LARGE SIGNAL RESPONSE SMALL SIGNAL RESPONSE 3-3 HA-2839 Test Circuit and Waveforms V+ (Continued) 0.001µF NOTES: 18. AV = -10. 19. Load Capacitance should be less than 10pF. 1µF 200Ω - INPUT OUTPUT + 0.001µF 21. SETTLING POINT (Summing Node) capacitance should be less than 10pF. For optimum settling time results, it is recommended that the test circuit be constructed directly onto the device pins. A Tektronix 568 Sampling Oscilloscope with S-3A sampling heads is recommended as a settle point monitor. PROBE MONITOR 500Ω 20. It is recommended that resistors be carbon composition and that feedback and summing network ratios be matched to 0.1%. 1µF V2kΩ 5kΩ SETTLING POINT SETTLING TIME TEST CIRCUIT Typical Performance Curves TA = 25oC, VSUPPLY = ±15V, RL = 1kΩ, CL < 10pF, Unless Otherwise Specified 650 GAIN BANDWIDTH PRODUCT (MHz) OPEN LOOP 80 60 40 20 0 AVCL = 1000 AVCL = 100 AVCL = 10 0 90 OPEN LOOP 1K 10K PHASE (DEGREES) GAIN (dB) 100 180 100K 1M 10M 600 550 500 5 100M 6 7 FIGURE 1. FREQUENCY RESPONSE FOR VARIOUS GAINS 9 10 11 12 13 14 15 FIGURE 2. GAIN BANDWIDTH PRODUCT vs SUPPLY VOLTAGE 750 90 80 650 70 550 CMRR (dB) GAIN BANDWIDTH PRODUCT (MHz) 8 SUPPLY VOLTAGE (±V) FREQUENCY (Hz) 450 60 50 40 350 30 250 -60 -40 -20 0 20 40 60 80 100 120 20 100 140 TEMPERATURE (oC) 1K 10K 100K FREQUENCY (Hz) FIGURE 3. GAIN BANDWIDTH PRODUCT vs TEMPERATURE FIGURE 4. CMRR vs FREQUENCY 3-4 1M 10M HA-2839 Typical Performance Curves TA = 25oC, VSUPPLY = ±15V, RL = 1kΩ, CL < 10pF, Unless Otherwise Specified (Continued) 50 110 100 ±PSRR 70 60 50 40 30 20 10 0 100 1K 37.5 30 NOISE VOLTAGE (nV/√Hz) PSRR (dB) 80 10K 100K 1M 20 NOISE VOLTAGE 10 12.5 0 10 10M 100 1K 0 100K 10K FREQUENCY (Hz) FREQUENCY (Hz) FIGURE 5. PSRR vs FREQUENCY FIGURE 6. INPUT NOISE vs FREQUENCY 750 700 650 SLEW RATE (V/µs) 700 SLEW RATE (V/µs) 25 NOISE CURRENT NOISE CURRENT (pA/√Hz) 90 650 600 550 600 500 550 -60 450 -40 -20 0 20 40 60 80 100 120 5 140 6 7 8 TEMPERATURE (oC) 9 10 11 12 13 14 15 14 15 SUPPLY VOLTAGE (±V) FIGURE 7. SLEW RATE vs TEMPERATURE FIGURE 8. SLEW RATE vs SUPPLY VOLTAGE 8.0 14 2.5 6.0 BIAS CURRENT 1.5 OFFSET VOLTAGE 5.0 0.5 4.0 SUPPLY CURRENT (mA) 7.0 INPUT OFFSET VOLTAGE (mV) INPUT BIAS CURRENT (µA) 3.5 12 -55oC 125oC 25oC 10 8 -0.5 3.0 -60 6 -40 -20 0 20 40 60 80 100 120 140 5 TEMPERATURE (oC) 6 7 8 9 10 11 12 13 SUPPLY VOLTAGE (±V) FIGURE 9. INPUT OFFSET VOLTAGE AND INPUT BIAS CURRENT vs TEMPERATURE FIGURE 10. SUPPLY CURRENT vs SUPPLY VOLTAGE 3-5 HA-2839 Typical Performance Curves TA = 25oC, VSUPPLY = ±15V, RL = 1kΩ, CL < 10pF, Unless Otherwise Specified -2.5 ±8V, 75Ω ±8V, 150Ω ±15V, 1kΩ 12.5 10 ±8V, 1kΩ OUTPUT SWING (V) POSITIVE OUTPUT SWING (V) 15 ±15V, 150Ω ±15V, 75Ω 7.5 ±8V, 1kΩ 5 2.5 -40 -20 0 20 40 60 80 -5 ±15V, 75Ω -7.5 ±15V, 150Ω -10 ±15V, 1kΩ ±8V, 150Ω 0 -60 ±8V, 75Ω 100 120 -12.5 -60 140 -40 -20 0 TEMPERATURE (oC) 20 40 60 80 100 120 140 TEMPERATURE (oC) FIGURE 11. POSITIVE OUTPUT SWING vs TEMPERATURE FIGURE 12. NEGATIVE OUTPUT SWING vs TEMPERATURE 25 -35 20 VSUPPLY = ±15V -45 15 -55 THD (dBc) OUTPUT VOLTAGE SWING (VP-P) (Continued) 10 VSUPPLY = ±8V 5 0 1K 10K 100K 1M 10M 100M -65 -75 VO = 10VP-P -85 VO = 2VP-P 100K 1M FREQUENCY (Hz) FREQUENCY (Hz) FIGURE 13. MAXIMUM UNDISTORTED OUTPUT SWING vs FREQUENCY VO = 0.5VP-P VO = 1VP-P FIGURE 14. TOTAL HARMONIC DISTORTION vs FREQUENCY THIRD INTERMOD PRODUCT (dBc) -35 VO = 0.5VP-P VO = 1VP-P -45 VO = 2VP-P -55 -65 VO = 5VP-P VO = 0.25VP-P -75 -85 -95 500K 10M 1M 10M FREQUENCY (Hz) FIGURE 15. INTERMODULATION DISTORTION vs FREQUENCY (TWO TONE) 3-6 HA-2839 Die Characteristics DIE DIMENSIONS: PASSIVATION: 65 mils x 52 mils x 19 mils 1650µm x 1310µm x 483µm Type: Nitride over Silox Silox Thickness: 12kÅ ±2kÅ Nitride thickness: 3.5kÅ ±1kÅ METALLIZATION: Type: Aluminum, 1% Copper Thickness: 16kÅ ±2kÅ TRANSISTOR COUNT: 34 PROCESS: SUBSTRATE POTENTIAL High Frequency Bipolar Dielectric Isolation V- Metallization Mask Layout HA-2839 V+ OUT -IN +IN V- 3-7