HITACHI 2SD1676

2SD1676
Silicon NPN with Internal Resistance
Application
Low frequency amplifier, Muting, Switching, Inverter
Outline
2SD1676
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Supply voltage
VCC
20
V
Input voltage
VI
±10
V
Output current
IO
600
mA
Total power dissipation
PT
300
mW
Operating temperature
TOP
–25 to +110
°C
Storage temperature
Tstg
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Input on voltage
VI(on)
1.1
—
1.7
V
VCC = 0.2 V, IO = 10 mA
Input off voltage
VI(off)
0.5
—
1.2
V
VCC = 5 V, IO = 10 µA
Output saturation voltage
VO(on)
—
20
40
mV
I O = 10 mA, II = 0.5 mA
Output cutoff current
I O(off)
—
—
0.5
µA
VCC = 5 V, VI = 0
DC current transfer ratio
Gi
60
100
—
Input resistance
R1
—
6.8
—
Resistance ratio
R1/R2
0.9
1.0
1.1
Turn on time
t on
—
0.3
—
µS
Storage time
t stg
—
1.5
—
µS
Fall time
tf
—
0.7
—
µS
Output on resistance
ron
—
1.0
—
Ω
2
VCC = 5 V, IO = 10 mA
kΩ
VCC = 5 V, VI = 5 V, RL = 1kΩ
VI = 7 V, RL = 1kΩ, f = 1kHz
2SD1676
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2SD1676
4
2SD1676
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intellectual property claims or other problems that may result from applications based on the
examples described herein.
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or Hitachi, Ltd.
6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL
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Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products
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MEDICAL APPLICATIONS.
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