2SJ218 Silicon P-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • 4 V gate drive device Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline 2SJ218 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS –60 V Gate to source voltage VGSS ±20 V Drain current ID –45 A –180 A –45 A Drain peak current I D(pulse)* Body to drain diode reverse drain current I DR 2 1 Channel dissipation Pch* 60 W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C 2 2SJ218 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Drain to source breakdown voltage V(BR)DSS –60 — — V I D = –10 mA, VGS = 0 Gate to source breakdown voltage V(BR)GSS ±20 — — V I G = ±100 µA, VDS = 0 Gate to source leak current I GSS — — ±10 µA VGS = ±16 V, VDS = 0 Zero gate voltage drain current I DSS — — –250 µA VDS = –50 V, VGS = 0 Gate to source cutoff voltage VGS(off) –1.0 — –2.0 V I D = –1 mA, VDS = –10 V Static drain to source on state RDS(on) — 0.033 0.042 Ω I D = –20 A, VGS = –10 V*1 — 0.045 0.06 resistance I D = –20 A, VGS = –4 V*1 Forward transfer admittance |yfs| 16 25 — S I D = –20 A, VDS = –10 V*1 Input capacitance Ciss — 3800 — pF VDS = –10 V, VGS = 0, Output capacitance Coss — 2000 — pF f = 1 MHz Reverse transfer capacitance Crss — 490 — pF Turn-on delay time t d(on) — 30 — ns I D = –20 A, VGS = –10 V, Rise time tr — 235 — ns RL = 1.5 Ω Turn-off delay time t d(off) — 670 — ns Fall time tf — 450 — ns Body to drain diode forward voltage VDF — –1.35 — V I F = –45 A, VGS = 0 Body to drain diode reverse recovery time t rr — 300 — ns I F = –45 A, VGS = 0, diF/dt = 50 A/µs Note: 1. Pulse test See characteristic curves of 2SJ217 3 2SJ218 4 2SJ218 When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi’s permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user’s unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachi’s sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS. 5