HL6504FM Visible High Power Laser Diode for DVD-RAM ADE-208-825 (Z) 1st Edition Nov. 1999 Description The HL6504FM is a 0.66 µm band AlGalnP laser diode (LD) with a multi-quantum well (MQW) structure. It is suitable as a light source for large capacity optical disc memories, such as DVD-RAM, and various other types of optical equipment. Hermetic sealing of the small package (φ 5.6 mm) assures high reliability. Application • Optical disc memories • Optical equipment Features • • • • High output power Visible light output Small package Low astigmatism : 50 mW (CW) : λp = 664 nm Typ : φ 5.6 mm : 5 µm Typ (PO = 5 mW) Internal Circuit Package Type • HL6504FM: FM Internal Circuit 1 3 LD 2 HL6504FM Absolute Maximum Ratings (TC = 25°C) Item Symbol Value Unit Optical output power PO 50 mW Pulse optical output power PO(pulse) 70 * mW Laser diode reverse voltage VR(LD) 2 V Operating temperature Topr −10 to +60 °C Storage temperature Tstg −40 to +85 °C Note: Pulse condition : Pulse width = 100 ns, duty = 50% Optical and Electrical Characteristics (TC = 25°C) Items Symbol Min Typ Max Unit Test Conditions Optical output power PO 50 — — mW Kink free * Pulse optical output power PO(pulse) 70 — — mW Kink free * Threshold current Ith 30 45 60 mA — Operating current Iop — 115 135 mA PO = 50 mW Operating voltage VOP 2.1 2.6 3.0 V PO = 50 mW Beam divergence parallel to the junction θ// 7 8.5 11 deg. PO = 50 mW Beam divergence parpendicular to the junction θ⊥ 18 21 26 deg. PO = 50 mW Asitgmatism AS — 5 — µm PO = 5 mW, NA = 0.55 Lasing wavelength λp 655 664 667 nm PO = 50 mW Note: Kink free is confirmed at the temperature of 25°C. 2 HL6504FM Typical Characteristic Curves Optical Output Power vs. Forward Current Pulse Optical Output Power vs. Forward Current 80 TC = 25°C 40 TC = 0°C 30 TC = 60°C 20 10 0 0 40 80 120 160 Optical output power, PO (mW) Optical output power, PO (mW) 50 TC = 25°C 60 TC = 0°C 40 TC = 60°C 20 pw = 100ns duty = 50% 0 200 0 40 Forward current, IF (mA) Threshold Current vs. Case Temperature 160 200 1.0 Slope efficiency, ηS (mW/mA) Threshold current, Ith (mA) 120 Slope Efficiency vs. Case Temperature 100 50 30 10 80 Forward current, IF (mA) 0 10 20 30 40 50 60 70 80 Case temprerature, TC (°C) 0.8 0.6 0.4 0.2 0 0 10 20 30 40 50 60 70 80 Case temperature, TC (°C) 3 HL6504FM Wavelength vs. Case Temperature Lasing Spectrum 675 PO = 50mW Lasing Wavelength, λP (nm) Relative intensity TC = 25°C PO = 35mW PO = 10mW PO = 5mW 655 660 665 PO = 50mW 670 665 660 655 650 0 10 Wavelength, λp (nm) 40 50 60 70 10 1.0 TC = 25°C NA = 0.55 0.8 Perpendicular 0.6 0.4 Parallel 0.2 0 −40 −30 −20 −10 0 Astigmatism, AS (µm) PO = 50mW TC = 25°C Relative intensity 30 Astigmatism vs. Optical Output Power Far Field Pattern 8 6 4 2 0 10 20 30 40 Angle, θ (deg) 4 20 Case temperature, TC (°C) 0 10 20 30 40 Oputical output power, PO (mW) 50 80 HL6504FM Frequency Response 3dB/div Electrostatic Destruction (MIL standard) 100 PO = 3mW Gain (dB) Survival rate (%) 80 60 40 Forward N = 5pcs ∆Iop ≤ 10% 20 1M 10M 100M Frequency (Hz) 1G 3G 0 0 1 2 Applied voltage (kV) 3 5 HL6504FM Package Dimensions Unit: mm 0.4 +0.1 –0 φ 5.6 +0 –0.025 1.0 ± 0.1 (90°) (0.4) 0.25 φ 4.1 ± 0.3 φ 3.55 ± 0.1 Glass 2.3 ± 0.2 φ 1.6 ± 0.2 1.27 6.5 ± 1.0 1.2 ± 0.1 Emitting Point 3 – φ 0.45 ± 0.1 1 1 2 3 3 2 φ 2.0 ± 0.2 Hitachi Code JEDEC EIAJ Weight (reference value) 6 LD/FM — — 0.3 g HL6504FM Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. 1. The laser light is harmful to human body especially to eye no matter what directly or indirectly. The laser beam shall be observed or adjusted through infrared camera or equivalent. 7 HL6504FM Hitachi, Ltd. Semiconductor & IC Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic components Group Dornacher Straße 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX Copyright © Hitachi, Ltd., 1998. All rights reserved. Printed in Japan. 8