2SK1952 Silicon N Channel MOS FET Application TO–220FM High speed power switching Features • • • • Low on–resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC – DC converter • Avalanche ratings 1 2 1 2 3 1. Gate 2. Drain 3. Source 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 60 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID 40 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 160 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR 40 A ——————————————————————————————————————————— Avalanche current IAP*** 40 A ——————————————————————————————————————————— Avalanche energy EAR*** 137 mJ ——————————————————————————————————————————— Channel dissipation Pch** 35 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25 °C *** Value at Tch = 25 °C, Rg ≥ 50 Ω 2SK1952 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown voltage V(BR)DSS 60 — — V ID = 10 mA, VGS = 0 ——————————————————————————————————————————— Gate to source breakdown voltage V(BR)GSS ±20 — — V IG = ±200 µA, VDS = 0 ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 250 µA VDS = 50 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 1.0 — 2.25 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static drain to source on state resistance RDS(on) — 0.018 0.022 Ω ID = 20 A VGS = 10 V * ———————————————————————— — 0.023 0.028 Ω ID = 20 A VGS = 4 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 22 35 — S ID = 20 A VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 3530 — pF VDS = 10 V ———————————————————————————————— Output capacitance Coss — 1480 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 300 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 33 — ns ID = 20 A ———————————————————————————————— Rise time tr — 155 — ns ———————————————————————————————— Turn–off delay time td(off) — 450 — ns VGS = 10 V RL = 1.5 Ω ———————————————————————————————— Fall time tf — 220 — ns ——————————————————————————————————————————— Body–drain diode forward voltage VDF — 1.2 — V IF = 40 A, VGS = 0 ——————————————————————————————————————————— Body–drain diode reverse recovery time trr — 120 — ns IF = 40 A, VGS = 0, diF / dt = 50 A / µs ——————————————————————————————————————————— * Pulse Test See characteristic curves of 2SK1911