HMC326MS8G / 326MS8GE v07.0607 AMPLIFIERS - SMT 5 GaAs InGaP HBT MMIC DRIVER AMPLIFIER, 3.0 - 4.5 GHz Typical Applications Features The HMC326MS8G / HMC326MS8GE is ideal for: Psat Output Power: +26 dBm • Microwave Radios > 40% PAE • Broadband Radio Systems Output IP3: +36 dBm • Wireless Local Loop Driver Amplifier High Gain: 21 dB Vs: +5.0V Ultra Small Package: MSOP8G Functional Diagram General Description The HMC326MS8G & HMC326MS8GE are high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC driver amplifiers which operate between 3.0 and 4.5 GHz. The amplifier is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved RF and thermal performance. The amplifier provides 21 dB of gain and +26 dBm of saturated power from a +5.0V supply voltage. Power down capability is available to conserve current consumption when the amplifier is not in use. Internal circuit matching was optimized to provide greater than 40% PAE. Electrical Specifications, TA = +25° C, Vs = 5V, Vpd = 5V Parameter Min. Frequency Range Gain 18 Gain Variation Over Temperature Output Power for 1dB Compression (P1dB) Noise Figure Vpd = 0V / 5V Control Current (Ipd) 5 - 66 dB 0.035 tOn/tOff dB / °C dB 7 dB 21 23.5 dBm 26 dBm 32 36 dBm Saturated Output Power (Psat) Output Third Order Intercept (IP3) Units GHz 12 Output Return Loss Switching Speed Max. 21 0.025 Input Return Loss Supply Current (Icc) Typ. 3.0 - 4.5 5 dB 0.001 / 130 mA 7 mA 10 ns For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC326MS8G / 326MS8GE v07.0607 GaAs InGaP HBT MMIC DRIVER AMPLIFIER, 3.0 - 4.5 GHz Broadband Gain & Return Loss 5 Gain vs. Temperature 24 20 22 10 S21 S11 S22 5 GAIN (dB) RESPONSE (dB) 15 0 -5 20 +25C +85C -40C 18 -10 -15 16 -20 2 2.5 3 3.5 4 4.5 5 5.5 3 6 3.25 3.5 30 28 28 +25C +85C -40C 24 22 4.25 4.5 4.25 4.5 26 24 +25C +85C -40C 22 20 20 3 3.25 3.5 3.75 4 4.25 4.5 3 3.25 3.5 FREQUENCY (GHz) 3.75 4 FREQUENCY (GHz) Output IP3 vs. Temperature Power Compression @ 3.5 GHz 40 Pout (dBm), Gain (dB), PAE (%) 45 38 OIP3 (dBm) 4 Psat vs. Temperature 30 Psat (dBm) OUTPUT P1dB (dBm) P1dB vs. Temperature 26 3.75 FREQUENCY (GHz) FREQUENCY (GHz) AMPLIFIERS - SMT 25 36 34 +25C +85C -40C 32 30 40 35 30 25 20 15 10 Output Power (dBm) Gain (dB) PAE (%) 5 0 3 3.25 3.5 3.75 4 FREQUENCY (GHz) 4.25 4.5 -8 -6 -4 -2 0 2 4 6 8 10 12 INPUT POWER (dBm) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 5 - 67 HMC326MS8G / 326MS8GE v07.0607 GaAs InGaP HBT MMIC DRIVER AMPLIFIER, 3.0 - 4.5 GHz 5 Input Return Loss vs. Temperature Output Return Loss vs. Temperature 0 OUTPUT RETURN LOSS (dB) INPUT RETURN LOSS (dB) AMPLIFIERS - SMT 0 +25C +85C -40C -5 -10 -15 -20 -3 -6 -9 +25C +85C -40C -12 -15 3 3.25 3.5 3.75 4 4.25 4.5 3 3.25 3.5 FREQUENCY (GHz) 3.75 4 4.25 4.5 4.25 4.5 FREQUENCY (GHz) Reverse Isolation vs. Temperature Noise Figure vs. Temperature 0 10 8 NOISE FIGURE (dB) REVERSE ISOLATION (dB) 9 -10 -20 +25C +85C -40C -30 -40 7 6 5 4 3 2 -50 +25C +85C -40C 1 -60 0 3 3.25 3.5 3.75 4 4.25 4.5 3 3.25 3.5 FREQUENCY (GHz) 3.75 4 FREQUENCY (GHz) 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13 12 1.5 150 130 110 90 70 50 P1dB Psat Gain 30 Icc 2 2.5 3 3.5 4 4.5 Icc (mA) GAIN (dB), P1dB (dBm), Psat (dBm) Gain, Power & Quiescent Supply Current vs. Vpd @3.5 GHz 10 5 Vpd (Vdc) 5 - 68 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC326MS8G / 326MS8GE v07.0607 GaAs InGaP HBT MMIC DRIVER AMPLIFIER, 3.0 - 4.5 GHz Collector Bias Voltage (Vcc) +5.5 Vdc Control Voltage Range (Vpd) +5.5 Vdc RF Input Power (RFin)(Vs = Vpd = +5.0 Vdc) +15 dBm Junction Temperature 150 °C Continuous Pdiss (T = 85 °C) (derate 14 mW/°C above 85 °C) 0.916 W Thermal Resistance (junction to ground paddle) 71 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C ESD Sensitivity (HBM) Class 1A ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing AMPLIFIERS - SMT 5 Absolute Maximum Ratings NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. 5. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. Package Information Part Number Package Body Material Lead Finish MSL Rating HMC326MS8G Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 HMC326MS8GE RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 Package Marking [3] [1] H326 XXXX [2] H326 XXXX [1] Max peak reflow temperature of 235 °C [2] Max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 5 - 69 HMC326MS8G / 326MS8GE v07.0607 Evaluation PCB AMPLIFIERS - SMT 5 GaAs InGaP HBT MMIC DRIVER AMPLIFIER, 3.0 - 4.5 GHz List of Materials for Evaluation PCB 104356 Item Description J1 - J2 PCB Mount SMA RF Connector J3 2mm DC Header C1 - C2 330 pF Capacitor, 0603 Pkg. C3 0.7 pF Capacitor, 0603 Pkg. C4 3.0 pF Capacitor, 0402 Pkg. C5 2.2 μF Capacitor, Tantalum L1 3.3 nH Inductor, 0805 Pkg. U1 HMC326MS8G / HMC326MS8GE Amplifier PCB [2] 104106 Eval Board [1] The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 5 - 70 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC326MS8G / 326MS8GE v07.0607 GaAs InGaP HBT MMIC DRIVER AMPLIFIER, 3.0 - 4.5 GHz 5 AMPLIFIERS - SMT Application Circuit Recommended Component Values L1 3.3 nH C1 - C2 330 pF C3 0.7 pF C4 3.0 pF C5 2.2 μF Note 1: C1 should be located < 0.1” (2.54 mm) from pin 8 (Vcc). Note 2: C2 should be located < 0.1” (2.54 mm) from L1. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 5 - 71