HMC451LC3 v00.0605 AMPLIFIERS - SMT 5 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 5 - 20 GHz Typical Applications Features The HMC451LC3 is ideal for use as a medium power amplifier for: Gain: 19 dB • Microwave Radio & VSAT Output IP3: +30 dBm • Military & Space Single Supply: +5.0 V @ 114 mA • Test Equipment & Sensors 50 Ohm Matched Input/Output • Fiber Optics RoHS Compliant 3 x 3mm SMT package Saturated Power: +21 dBm @ 21% PAE • LO Driver for HMC Mixers Functional Diagram General Description The HMC451LC3 is an efficient GaAs PHEMT MMIC Medium Power Amplifier housed in a leadless RoHS compliant SMT package. Operating between 5 and 20 GHz, the amplifier provides 19 dB of gain, +21 dBm of saturated power and 21% PAE from a single +5.0V supply. This 50 Ohm matched amplifier does not require any external components and the RF I/O’s are DC blocked, making it an ideal linear gain block or driver for HMC SMT mixers. The HMC451LC3 allows the use of surface mount manufacturing techniques. Electrical Specifications, TA = +25° C, Vdd = +5V Parameter Min. Frequency Range Gain 16 Gain Variation Over Temperature Max. Min. 19 0.015 Typ. Max. Min. 15 - 18 15 0.025 18 0.015 Typ. Max. 18 - 20 14 0.025 GHz 17 0.015 Units dB 0.025 dB/ °C Input Return Loss 13 13 12 dB Output Return Loss 12 8 8 dB 19.5 dBm 20.5 21 dBm dBm Output Power for 1 dB Compression (P1dB) 16.5 19.5 16 19 16.5 Saturated Output Power (Psat) 21 Output Third Order Intercept (IP3) 32 29 29 Noise Figure 7 6.5 7 dB 114 114 114 mA Supply Current (Idd) 5 - 246 Typ. 5 -15 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC451LC3 v00.0605 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 5 - 20 GHz Broadband Gain & Return Loss 5 Gain vs. Temperature 22 20 20 18 10 16 S21 S11 S22 5 GAIN (dB) RESPONSE (dB) 15 0 -5 -10 14 12 10 +25C 8 +85C 6 -40C 4 -15 2 -20 0 3 5 7 9 11 13 15 17 19 21 23 25 4 6 8 FREQUENCY (GHz) 14 16 18 20 22 Output Return Loss vs. Temperature 0 0 +25C +85C -40C -5 RETURN LOSS (dB) RETURN LOSS (dB) 12 FREQUENCY (GHz) Input Return Loss vs. Temperature -10 -15 -20 +25C +85C -40C -5 -10 -15 -20 4 6 8 10 12 14 16 18 20 22 4 6 8 FREQUENCY (GHz) Psat (dBm) +25C +85C -40C 6 8 10 12 12 14 16 18 20 22 18 20 22 Psat vs. Temperature 26 24 22 20 18 16 14 12 10 8 6 4 2 0 4 10 FREQUENCY (GHz) P1dB vs. Temperature P1dB (dBm) 10 AMPLIFIERS - SMT 24 25 14 16 FREQUENCY (GHz) 18 20 22 26 24 22 20 18 16 14 12 10 8 6 4 2 0 +25C +85C -40C 4 6 8 10 12 14 16 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 5 - 247 HMC451LC3 v00.0605 Power Compression @ 20 GHz Power Compression @ 10 GHz 26 24 22 20 18 16 14 12 10 8 6 4 2 0 -18 -16 -14 -12 -10 Pout (dBm) Gain (dB) PAE (%) -8 -6 -4 -2 Pout (dBm), GAIN (dB), PAE (%) Pout (dBm), GAIN (dB), PAE (%) AMPLIFIERS - SMT 5 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 5 - 20 GHz 0 2 4 6 26 24 22 20 18 16 14 12 10 8 6 4 2 0 -18 -16 -14 -12 -10 INPUT POWER (dBm) 11 38 10 36 9 NOISE FIGURE (dB) OIP3 (dBm) 34 32 30 28 26 +25C +85C -40C 20 -2 0 2 4 6 8 7 6 5 4 3 +25C +85C -40C 1 16 0 4 6 8 10 12 14 16 18 20 22 4 6 8 FREQUENCY (GHz) 21 -10 ISOLATION (dB) 0 20 19 Gain P1dB Psat 17 16 4.5 12 14 16 18 20 22 Reverse Isolation vs. Temperature 22 18 10 FREQUENCY (GHz) Gain, P1dB & PSAT vs. Supply Voltage @ 11 GHz GAIN (dB), P1dB (dBm), Psat (dBm) -4 2 18 +25C +85C -40C -20 -30 -40 -50 -60 5 Vdd Supply Voltage (Vdc) 5 - 248 -6 Noise Figure vs. Temperature 40 22 -8 INPUT POWER (dBm) Output IP3 vs. Temperature 24 Pout (dBm) Gain (dB) PAE (%) 5.5 4 6 8 10 12 14 16 18 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 20 22 HMC451LC3 v00.0605 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 5 - 20 GHz Typical Supply Current vs. Vdd Drain Bias Voltage (Vdd) +5.5 Vdc Vdd (V) Idd (mA) RF Input Power (RFin)(Vdd = +5.0 Vdc) +10 dBm +4.5 111 Channel Temperature 175 °C +5.0 114 Continuous Pdiss (T = 85 °C) (derate 10 mW/°C above 85 °C) 0.9 W +5.5 116 Note: Amplifier will operate over full voltage range shown above Thermal Resistance (channel to ground paddle) 100 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS 5 AMPLIFIERS - SMT Absolute Maximum Ratings Outline Drawing NOTES: 1. PACKAGE BODY MATERIAL: ALUMINA 2. LEAD AND GROUND PADDLE PLATING: 30-80 MICROINCHES GOLD OVER 50 MICROINCHES MINIMUM NICKEL 3. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm DATUM -C6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 5 - 249 HMC451LC3 v00.0605 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 5 - 20 GHz AMPLIFIERS - SMT 5 Pin Descriptions Pin Number Function Description 1, 2, 4 - 9, 11, 12, 14, 15 N/C This pin may be connected to RF/DC ground. Performance will not be affected. 3 RFIN This pin is AC coupled and matched to 50 Ohms from 5 - 20 GHz. 10 RFOUT This pin is AC coupled and matched to 50 Ohms from 5 - 20 GHz. 13 Vdd2 Power Supply Voltage for the amplifier. External bypass capacitors of 100 pF, 1,000 pF and 2.2 μF are required. 16 Vdd1 Power Supply Voltage for the amplifier. External bypass capacitors of 100 pF, 1,000 pF and 2.2 μF are required. GND Package bottom must be connected to RF/DC ground. Interface Schematic Application Circuit Component 5 - 250 Value C1, C2 100 pF C3, C4 1,000 pF C5, C6 2.2 μF For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC451LC3 v00.0605 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 5 - 20 GHz 5 AMPLIFIERS - SMT Evaluation PCB List of Materials for Evaluation PCB 111667 Item Description J1 - J2 PCB Mount SMA Connector J3 - J5 DC Pin C1, C2 100 pF Capacitor, 0402 Pkg. C3, C4 1000 pF Capacitor, 0603 Pkg. C5, C6 2.2 μF Capacitor, Tantalum U1 HMC451LC3 Amplifier PCB [2] 111665 Evaluation PCB, 10 mils [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 [1] The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of VIA holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 5 - 251