HMC498LC4 v00.0904 AMPLIFIERS - SMT 5 GaAs PHEMT MEDIUM POWER AMPLIFIER, 17 - 24 GHz Typical Applications Features The HMC498LC4 is ideal for use as a LNA or Driver amplifier for: +36 dBm Output IP3 • Point-to-Point Radios 22 dB Gain • Point-to-Multi-Point Radios & VSAT +5.0 V @ 250 mA Supply • Test Equipment & Sensors 50 Ohm Matched Input/Output • Military End-Use RoHS Compliant 4x4 mm SMT Package Functional Diagram General Description Saturated Power: +26 dBm @ 23% PAE The HMC498LC4 is a high dynamic range GaAs PHEMT MMIC Medium Power Amplifier housed in a leadless “Pb free” SMT package. Operating from 17 to 24 GHz, the amplifier provides 22 dB of gain, +26 dBm of saturated power and 23% PAE from a +5.0 V supply voltage. Noise figure is 4 dB while output IP3 is +36 dBm typical enabling the HMC498LC4 to function as a low noise front end as well as a driver amplifier. The RF I/Os are DC blocked and matched to 50 Ohms for ease of use. The HMC498LC4 eliminates the need for wire bonding, allowing use of surface mount manufacturing techniques. Electrical Specifications, TA = +25° C, Vdd1, 2, 3 = 5V, Idd = 250 mA* Parameter Min. Frequency Range Gain 18 Gain Variation Over Temperature Min. 20 0.03 25 Max. Min. 18 0.03 22.5 dB 0.03 dB/ °C dB 20 dB 25.5 dBm 26.5 25.5 26.5 dBm Output Third Order Intercept (IP3) 35 36 35.5 dBm Noise Figure 4.0 4.0 4.5 dB Supply Current (Idd)(Vdd = +5V, Vgg = -0.8V Typ.) 250 250 250 mA * Adjust Vgg between -2 to 0V to achieve Idd = 250 mA typical. 5 - 512 Units GHz 10 15 24.5 Max. 21 0.02 13 21.5 Typ. 23 - 24 22.5 0.02 15 22 Typ. 19 - 23 13 Output Return Loss Saturated Output Power (Psat) Max. 22 0.02 Input Return Loss Output Power for 1 dB Compression (P1dB) Typ. 17 - 19 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC498LC4 v00.0904 GaAs PHEMT MEDIUM POWER AMPLIFIER, 17 - 24 GHz 5 Gain vs. Temperature 25 26 20 24 15 S21 5 S11 0 S22 GAIN (dB) RESPONSE (dB) 22 10 -5 20 18 16 +25 C -10 +85 C 14 -40 C -15 12 -20 -25 10 12 14 16 18 20 22 24 26 16 28 17 18 FREQUENCY (GHz) 20 21 22 23 24 25 FREQUENCY (GHz) Input Return Loss vs. Temperature Output Return Loss vs. Temperature 0 0 +25 C +85 C -40 C -5 +25 C +85 C -40 C -5 RETURN LOSS (dB) RETURN LOSS (dB) 19 AMPLIFIERS - SMT Broadband Gain & Return Loss -10 -15 -10 -15 -20 -20 -25 16 17 18 19 20 21 22 23 24 25 16 17 18 FREQUENCY (GHz) 20 21 22 23 24 25 23 24 25 FREQUENCY (GHz) P1dB vs. Temperature Psat vs. Temperature 30 30 28 28 26 26 24 24 Psat (dBm) P1dB (dBm) 19 22 20 18 +25 C +85 C -40 C 16 14 22 20 18 +25 C +85 C -40 C 16 14 12 12 10 10 16 17 18 19 20 21 22 FREQUENCY (GHz) 23 24 25 16 17 18 19 20 21 22 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 5 - 513 HMC498LC4 v00.0904 Output IP3 vs. Temperature Noise Figure vs. Temperature 10 38 9 36 8 NOISE FIGURE (dB) 40 34 OIP3 (dBm) AMPLIFIERS - SMT 5 GaAs PHEMT MEDIUM POWER AMPLIFIER, 17 - 24 GHz 32 30 28 +25 C 26 +85 C 24 +25 C +85 C -40 C 7 6 5 4 3 2 -40 C 22 1 20 0 16 17 18 19 20 21 22 23 24 25 16 17 18 19 FREQUENCY (GHz) 22 23 24 25 0 38 -10 36 34 32 Gain P1dB Psat OIP3 30 28 26 -20 +25 C +85 C -40 C -30 -40 -50 24 -60 22 20 4.5 -70 5 5.5 16 17 18 19 Vdd Supply Voltage (Vdc) Pout (dBm) Gain (dB) PAE (%) -8 -6 -4 -2 0 2 INPUT POWER (dBm) 4 21 22 23 24 25 Power Compression @ 23 GHz Pout (dBm), GAIN (dB), PAE (%) 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 -10 20 FREQUENCY (GHz) Power Compression @ 18GHz Pout (dBm), GAIN (dB), PAE (%) 21 Reverse Isolation vs. Temperature 40 ISOLATION (dB) Gain (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm) Gain, Power & OIP3 vs. Supply Voltage @ 23 GHz 5 - 514 20 FREQUENCY (GHz) 6 8 10 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 -10 Pout (dBm) Gain (dB) PAE (%) -8 -6 -4 -2 0 2 4 6 INPUT POWER (dBm) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 8 10 HMC498LC4 Absolute Maximum Ratings Drain Bias Voltage (Vdd1, Vdd2, Vdd3) +5.5 Vdc Gate Bias Voltage (Vgg) -4.0 to 0 Vdc GaAs PHEMT MEDIUM POWER AMPLIFIER, 17 - 24 GHz Typical Supply Current vs. Vdd Vdd (Vdc) Idd (mA) +4.5 239 RF Input Power (RFin)(Vdd = +5.0 Vdc) +10 dBm +5.0 250 Channel Temperature 175 °C +5.5 262 Continuous Pdiss (T= 85 °C) (derate 18 mW/°C above 85 °C) 1.62 W Thermal Resistance (channel to ground paddle) 55.6 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C ESD Sensitivity (HBM) Class 1A Note: Amplifier will operate over full voltage ranges shown above. Vgg adjusted to achieve Idd= 250 mA at +5.0V. ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS 5 AMPLIFIERS - SMT v00.0904 Outline Drawing NOTES: 1. PACKAGE BODY MATERIAL: ALUMINA. 2. LEAD AND GROUND PADDLE PLATING: GOLD FLASH OVER NICKEL. 3. DIMENSIONS ARE IN INCHES (MILLIMETERS). 4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE. 5. CHARACTERS TO BE HELVETICA MEDIUM, .025 HIGH, BLACK INK, OR LASER MARK LOCATED APPROX. AS SHOWN. 6. PACKAGE WARP SHALL NOT EXCEED 0.05MM DATUM – C – 7. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 5 - 515 HMC498LC4 v00.0904 AMPLIFIERS - SMT 5 5 - 516 GaAs PHEMT MEDIUM POWER AMPLIFIER, 17 - 24 GHz Pin Descriptions Pin Number Function Description 1, 5-8, 10-14, 18, 20, 22, 24 N/C No connection required. These pins may be connected to RF/DC ground without affecting performance. 2, 4, 15, 17 GND Package bottom has an exposed metal paddle that must also be connected to RF/DC ground. 3 RFIN This pin is AC coupled and matched to 50 Ohms from 17 - 24 GHz. 9 Vgg Gate control for amplifier. Adjust to achieve Id of 250 mA. Please follow “MMIC Amplifier Biasing Procedure” Application Note. External bypass capacitors of 100 pF, 1000 pF and 2.2 μF are required. 16 RFOUT This pad is AC coupled and matched to 50 Ohms from 17 - 24 GHz. 23, 21, 19 Vdd1, Vdd2, Vdd3 Power Supply Voltage for the amplifier. External bypass capacitors of 100 pF, 1000pF, and 2.2 μF are required. Interface Schematic For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC498LC4 v00.0904 GaAs PHEMT MEDIUM POWER AMPLIFIER, 17 - 24 GHz 5 AMPLIFIERS - SMT Evaluation PCB List of Materials for Evaluation PCB 108537 [1] Item J1, J2 Description 2.92 mm PC mount K-connector J3 - J8 DC Pin C1 - C4 100 pF capacitor, 0402 pkg. C5 - C8 1,000 pF Capacitor, 0603 pkg. C9 - C12 2.2μF Capacitor, Tantalum U1 HMC498LC4 Amplifier PCB [2] 108535 Evaluation PCB [1] Reference this number when ordering complete evlaution PCB [2] Circuit Board Material: Rogers 4350. The circuit board used in this application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of VIA holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 5 - 517