HMC606LC5 v00.0407 GaAs InGaP HBT MMIC ULTRA LOW PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHz AMPLIFIERS - SMT 5 Typical Applications Features The HMC606LC5 is ideal for: Ultra Low Phase Noise: -160 dBc/Hz @ 10 kHz • Radar, EW & ECM P1dB Output Power: +15 dBm • Microwave Radio Gain: 13.5 dB • Test Instrumentation Output IP3: +27 dBm • Military & Space Supply Voltage: +5V @ 64 mA • Fiber Optic Systems 50 Ohm Matched Input/Output 25mm2 Leadless SMT Package Functional Diagram General Description The HMC606LC5 is a GaAs InGaP HBT MMIC Distributed Amplifier housed in a leadless 5 x 5 mm surface mount package which operates between 2 and 18 GHz. With an input signal of 12 GHz, the amplifier provides ultra low phase noise performance of -160 dBc/Hz at 10 kHz offset, representing a significant improvement over FET-based distributed amplifiers. The HMC606LC5 provides 13.5 dB of small signal gain, +27 dBm output IP3 and +15 dBm of output power at 1 dB gain compression while requiring 64 mA from a +5V supply. The HMC606LC5 amplifier I/Os are internally matched to 50 Ohms and are internally DC blocked. Electrical Specifications, TA = +25° C, Vcc1= Vcc2= 5V Parameter Min. Frequency Range Gain 10.5 Gain Flatness Gain Variation Over Temperature Max. Min. 13.5 9.5 Typ. Max. Units 2 - 18 GHz 12.5 dB ±1.0 ±1.0 dB 0.021 0.024 dB/ °C Noise Figure 5 7 dB Input Return Loss 20 18 dB Output Return Loss Output Power for 1 dB Compression (P1dB) 15 12 15 10 15 dB 13 dBm Saturated Output Power (Psat) 17 15 dBm Output Third Order Intercept (IP3) 27 22 dBm -140 -140 dBc/Hz Phase Noise @ 100 Hz Phase Noise @ 1 kHz -150 -150 dBc/Hz Phase Noise @ 10 kHz -160 -160 dBc/Hz Phase Noise @ 1 MHz -170 -170 dBc/Hz Supply Current 5 - 628 Typ. 2 - 12 64 80 64 80 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com mA HMC606LC5 v00.0407 GaAs InGaP HBT MMIC ULTRA LOW PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHz 20 15 18 10 16 5 14 S21 S11 S22 0 -5 -10 12 10 8 -15 6 -20 4 -25 2 +25C +85C -40C 0 0 2 4 6 8 10 12 14 16 18 20 22 2 4 6 FREQUENCY (GHz) Input Return Loss vs. Temperature 10 12 14 16 18 Output Return Loss vs. Temperature 0 OUTPUT RETURN LOSS (dB) 0 INPUT RETURN LOSS (dB) 8 FREQUENCY (GHz) AMPLIFIERS - SMT 20 -30 -5 +25C +85C -40C -10 -15 -20 -25 -30 +25C +85C -40C -5 -10 -15 -20 -25 -30 2 4 6 8 10 12 14 16 18 2 4 6 FREQUENCY (GHz) NOISE FIGURE (dB) 15 10 5 Output Power Gain PAE 0 -10 -5 0 Pin (dBm) 10 12 14 16 18 16 18 Noise Figure vs. Temperature 20 -5 -15 8 FREQUENCY (GHz) Power Compression Pout (dBm), Gain (dB), PAE (%) 5 Gain vs. Temperature GAIN (dB) RESPONSE (dB) Gain & Return Loss 5 10 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 +25C +85C -40C 2 4 6 8 10 12 14 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 5 - 629 HMC606LC5 v00.0407 GaAs InGaP HBT MMIC ULTRA LOW PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHz P1dB vs. Temperature Psat vs. Temperature 20 25 18 23 16 21 14 19 Psat (dBm) P1dB (dBm) AMPLIFIERS - SMT 5 12 10 +25C +85C -40C 8 17 15 13 6 11 4 9 2 7 0 +25C +85C -40C 5 2 4 6 8 10 12 14 16 18 2 4 6 FREQUENCY (GHz) 12 14 16 18 Phase Noise @ 12 GHz -20 -40 -60 -80 -100 +25C +85C -40C -120 -140 -160 2 4 6 8 10 12 14 16 18 -180 1 10 2 10 FREQUENCY (GHz) 4 10 5 10 5 10 10 6 Phase Noise at Psat @ 12 GHz 0 -20 PHASE NOISE (dBc/Hz) 0 -20 -40 -60 -80 -100 -120 -140 -40 -60 -80 -100 -120 -140 -160 -160 -180 1 10 3 10 FREQUENCY (Hz) Phase Noise at P1dB @ 12 GHz PHASE NOISE (dBc/Hz) 10 0 35 33 31 29 27 25 23 21 19 17 15 13 11 9 7 5 PHASE NOISE (dBc/Hz) OIP3 (dBm) Output IP3 vs. Temperature 2 10 3 10 4 10 FREQUENCY (Hz) 5 - 630 8 FREQUENCY (GHz) 5 10 6 10 -180 1 10 2 10 3 10 4 10 10 FREQUENCY (Hz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 6 HMC606LC5 v00.0407 GaAs InGaP HBT MMIC ULTRA LOW PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHz Typical Supply Current vs. Vcc1, Vcc2 Vcc1= Vcc2= 5V 7V RF Input Power (RFin) +15 dBm +4.5 53 Channel Temperature 175 °C +5.0 64 Continuous Pdiss (T = 85 °C) (derate 6 mW/°C above 85 °C) 0.55 W +5.5 71 Thermal Resistance (channel to ground paddle) 169.5 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C Vcc, Vcc2 (V) Icc + Icc2 (mA) ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS 5 AMPLIFIERS - SMT Absolute Maximum Ratings Outline Drawing NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE. 4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM. PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM. 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 5 - 631 HMC606LC5 v00.0407 GaAs InGaP HBT MMIC ULTRA LOW PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHz AMPLIFIERS - SMT 5 5 - 632 Pin Descriptions Pin Number Function Description 1, 3, 7 - 15, 17 - 19, 23 - 32 N/C No connection. These pins may be connected to RF ground. Performance will not be affected. 2, 16 Vcc1, Vcc2 Vcc1= Vcc2= 5V. Power supply voltage for the amplifier. 4, 6, 20, 22, Ground Paddle GND Ground paddle must be connected to RF/DC ground. 5 RFIN This pin is AC coupled and matched to 50 Ohms from 2 - 18 GHz. 21 RFOUT This pin is AC coupled and matched to 50 Ohms from 2 - 18 GHz. Interface Schematic For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC606LC5 v00.0407 GaAs InGaP HBT MMIC ULTRA LOW PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHz 5 AMPLIFIERS - SMT Evaluation PCB List of Materials for Evaluation PCB 117156 Item Description J1 - J2 SRI K Connector J3 - J4 2mm Molex Header C1, C2 4.7 μF Capacitor, Tantalum C3, C4 100 pF Capacitor, 0402 Pkg. C5, C6 1000 pF Capacitor, 0603 Pkg. U1 HMC465LP5 / HMC465LP5E PCB [2] 117325 Evaluation PCB [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 [1] The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and package bottom should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 5 - 633