HT45B0C MOSFET Gate Driver Technical Document · Tools Information · FAQs · Application Note Features · Three low side and high side MOSFET driver · Input logic supply range from 4.5V~5.5V · Low side drive supply range from 9V~20V with low · Low voltage protection function voltage protection · 24-pin SKDIP/SOP package · High side driver output maximum voltage is 80V General Description The high side driver operates up to 80 Volts. The input logic power is from VDD, so it can easy to interface with microcontroller. The devices are for power MOSFET gate drivers, which interface directly to driver the power MOSFET. There are three high side drivers and three low side drivers to driver six N-channel power MOSFET. Block Diagram V D D V D A T H ig h S id e D r iv e r A T L L e v e l S h ifte r 3 0 k 9 V D r iv e r A T S S V D D L o g ic C ir c u it V S A T V M L o w 3 0 k 9 L e v e l S h ifte r A B L S id e D r iv e r D r iv e r A B V S S L o w V o lta g e P r o te c tio n V D D V D B T H ig h S id e D r iv e r L e v e l S h ifte r B T L 3 0 k 9 V S S V D D L o g ic C ir c u it D r iv e r V S B T V M L o w 3 0 k 9 L e v e l S h ifte r B B L B T S id e D r iv e r D r iv e r B B V S S V D D V D C T H ig h S id e D r iv e r L e v e l S h ifte r C T L 3 0 k 9 V S S V D D L o g ic C ir c u it D r iv e r V S C T V M L o w 3 0 k 9 L e v e l S h ifte r C B L C T S id e D r iv e r D r iv e r C B V S S Rev. 1.00 1 December 21, 2006 HT45B0C Pin Assignment V M 1 2 4 V D A T N C 2 2 3 A T V S S 3 2 2 V S A T V D D 4 2 1 A B A T L 5 2 0 V D B T A B L 6 1 9 B T B T L 7 1 8 V S B T B B L 8 1 7 B B C T L 9 1 6 V D C T C B L 1 0 1 5 C T N C 1 1 1 4 V S C T V S S 1 2 1 3 C B H T 4 5 B 0 C 2 4 S K D IP -A /S O P -A Pin Description Pin Name I/O Description VDAT VDBT VDCT ¾ Upper side power MOSFET gate driver positive power supply AT BT CT O High side high voltage drive output VSAT VSBT VSCT ¾ Upper side power MOSFET gate driver negative power supply AB BB CB O Low side high voltage drive output ATL BTL CTL I Logic input for high side gate driver output (AT, BT, CT) ABL BBL CBL I Logic input for low side gate driver output (AB, BB, CB) VM ¾ Low side driver power supply and power supply for VDAT/VSAT, VDBT/VSBT, VDCT/VSCT charging capacitors VDD ¾ Logic power supply VSS ¾ Negative power supply, ground Rev. 1.00 2 December 21, 2006 HT45B0C Absolute Maximum Ratings VDD Supply Voltage ...................................................................................................................VSS-0.3V to VSS+6.0V VM Supply Voltage ......................................................................................................................VSS-0.3V to VSS+20V VDAT, VDBT, VDCT Supply Voltage ............................................................................................VSS-0.3V to VSS+80V VSAT, VSBT, VSCT Supply Voltage .............................................................................................VSS-0.3V to VSS+70V Input Voltage ..............................................................................................................................VSS-0.3V to VDD+0.3V Storage Temperature ............................-50°C to 125°C Operating Temperature...........................-40°C to 85°C IOL Total ..............................................................150mA IOH Total............................................................-100mA Total Power Dissipation .....................................500mW Note: These are stress ratings only. Stresses exceeding the range specified under ²Absolute Maximum Ratings² may cause substantial damage to the device. Functional operation of this device at other conditions beyond those listed in the specification is not implied and prolonged exposure to extreme conditions may affect device reliability. D.C. Characteristics Symbol Parameter Ta=25°C Test Conditions VDD Conditions Min. Typ. Max. Unit VDD Operating Voltage ¾ ¾ 4.5 ¾ 5.5 V VM Low Side Driver Power Supply ¾ ¾ VLVH ¾ 20 V VLVH VM Low Voltage Protection Voltage ¾ High going 8 9 10 V VLVL VM Low Voltage Protection Voltage ¾ Low going 7 8 9 V IDD VDD Operating Current 5V No load ¾ 1 2 mA IVM VM Operating Current ¾ ¾ 0.5 1 mA VIL Input Low Voltage for ATL, BTL, CTL, ABL, BBL, CBL 5V ¾ 0 ¾ 0.3VDD V VIH Input High Voltage for ATL, BTL, CTL, ABL, BBL, CBL 5V ¾ 0.7VDD ¾ VDD V IOL AT, AB, BT, BB, CT and CB Sink Current ¾ VM and VDxT-VSxT=15V, VOL=1.5V 25 40 ¾ mA IOH AT, AB, BT, BB, CT and CB Source Current ¾ VM and VDxT-VSxT=15V, VOH=13.5V -12.5 -20 ¾ mA IOLS AT, AB, BT, BB, CT and CB Output Low Short Circuit Pulsed Current ¾ VM and VDxT-VSxT=15V, VO=15V, VIN=VIL, pulse width £10ms ¾ 380 ¾ mA IOHS AT, AB, BT, BB, CT and CB Output High Short Circuit Pulsed Current ¾ VM and VDxT-VSxT=15V, VO=0V, VIN=VIH, pulse width £10ms ¾ -165 ¾ mA RPH Pull-high Resistance of ABL, BBL, CBL 5V ¾ 10 30 50 kW RPL Pull-low Resistance of ATL, BTL, CTL 5V ¾ 10 30 50 kW VM=20V Note: VDxT is VDAT, VDBT or VDCT VSxT is VSAT, VSBT or VSCT The IOLS and IOHS parameters have been characterised but not 100% production tested. Rev. 1.00 3 December 21, 2006 HT45B0C A.C. Characteristics Symbol Ta=25°C Test Conditions Parameter VDD VM Conditions Min. Typ. Max. Unit tON Turn-on Propagation Delay 5V CL=1000pF, 15V VDxT-VSxT=15V, VDxT=80V ¾ ¾ 250 ns tOFF Turn-off Propagation Delay 5V CL=1000pF, 15V VDxT-VSxT=15V, VDxT=80V ¾ ¾ 150 ns tR Turn-on Rising Time 5V CL=1000pF, 15V VDxT-VSxT=15V, VDxT=80V ¾ ¾ 250 ns tF Turn-off Falling Time 5V CL=1000pF, 15V VDxT-VSxT=15V, VDxT=80V ¾ ¾ 120 ns tIN Input Pulse Width for ATL, BTL, CTL, ABL, BBL, CBL 5V 15V 200 ¾ ¾ ns ¾ Note: VDxT is VDAT, VDBT or VDCT VSxT is VSAT, VSBT or VSCT x B L 5 0 % tO 5 0 % tR N tO 9 0 % 9 0 % 1 0 % x B 1 0 % 5 0 % x T L tO N 5 0 % tR tO 9 0 % x T tF F F 1 0 % tF F F 9 0 % 1 0 % Note: x is A, B or C Rev. 1.00 4 December 21, 2006 HT45B0C Functional Description Input/Output Truth Table The output of the device is according the input pin. The true table is as follow: ATL, BTL, CTL ABL, BBL, CBL Low Voltage Protection AT, BT, CT AB, BB, CB 0 1 N VSAT, VSBT, VSCT VSS, VSS, VSS 0 0 N VSAT, VSBT, VSCT VM, VM, VM 1 1 N VDAT, VDBT, VDCT VSS, VSS, VSS 1 0 N VSAT, VSBT, VSCT VSS, VSS, VSS ¾ ¾ Y VSAT, VSBT, VSCT VSS, VSS, VSS (ATL, ABL), (BTL, BBL) and (CTL, CBL) Truth Table Timing Diagrams x T L x B L x T x B Note: x is A, B or C Rev. 1.00 5 December 21, 2006 HT45B0C Package Information 24-pin SKDIP (300mil) Outline Dimensions A B 2 4 1 3 1 1 2 H C D E Symbol Rev. 1.00 F = G I Dimensions in mil Min. Nom. Max. A 1235 ¾ 1265 B 255 ¾ 265 C 125 ¾ 135 D 125 ¾ 145 E 16 ¾ 20 F 50 ¾ 70 G ¾ 100 ¾ H 295 ¾ 315 I 345 ¾ 360 a 0° ¾ 15° 6 December 21, 2006 HT45B0C 24-pin SOP (300mil) Outline Dimensions 1 3 2 4 A B 1 2 1 C C ' G H D E Symbol Rev. 1.00 = F Dimensions in mil Min. Nom. Max. A 394 ¾ 419 B 290 ¾ 300 C 14 ¾ 20 C¢ 590 ¾ 614 D 92 ¾ 104 E ¾ 50 ¾ F 4 ¾ ¾ G 32 ¾ 38 H 4 ¾ 12 a 0° ¾ 10° 7 December 21, 2006 HT45B0C Product Tape and Reel Specifications Reel Dimensions D T 2 A C B T 1 SOP 24W Symbol Description Dimensions in mm A Reel Outer Diameter B Reel Inner Diameter 62±1.5 C Spindle Hole Diameter 13+0.5 -0.2 D Key Slit Width 330±1 2±0.5 T1 Space Between Flange 24.8+0.3 -0.2 T2 Reel Thickness 30.2±0.2 Rev. 1.00 8 December 21, 2006 HT45B0C Carrier Tape Dimensions P 0 D P 1 t E F W C D 1 B 0 P K 0 A 0 SOP 24W Symbol Description Dimensions in mm W Carrier Tape Width 24±0.3 P Cavity Pitch 12±0.1 E Perforation Position F Cavity to Perforation (Width Direction) 11.5±0.1 D Perforation Diameter 1.55+0.1 D1 Cavity Hole Diameter 1.5+0.25 P0 Perforation Pitch 4±0.1 P1 Cavity to Perforation (Length Direction) 2±0.1 A0 Cavity Length 10.9±0.1 B0 Cavity Width 15.9±0.1 K0 Cavity Depth 3.1±0.1 t Carrier Tape Thickness C Cover Tape Width Rev. 1.00 1.75±0.1 0.35±0.05 21.3 9 December 21, 2006 HT45B0C Holtek Semiconductor Inc. (Headquarters) No.3, Creation Rd. II, Science Park, Hsinchu, Taiwan Tel: 886-3-563-1999 Fax: 886-3-563-1189 http://www.holtek.com.tw Holtek Semiconductor Inc. (Taipei Sales Office) 4F-2, No. 3-2, YuanQu St., Nankang Software Park, Taipei 115, Taiwan Tel: 886-2-2655-7070 Fax: 886-2-2655-7373 Fax: 886-2-2655-7383 (International sales hotline) Holtek Semiconductor Inc. (Shanghai Sales Office) 7th Floor, Building 2, No.889, Yi Shan Rd., Shanghai, China 200233 Tel: 86-21-6485-5560 Fax: 86-21-6485-0313 http://www.holtek.com.cn Holtek Semiconductor Inc. (Shenzhen Sales Office) 5/F, Unit A, Productivity Building, Cross of Science M 3rd Road and Gaoxin M 2nd Road, Science Park, Nanshan District, Shenzhen, China 518057 Tel: 86-755-8616-9908, 86-755-8616-9308 Fax: 86-755-8616-9533 Holtek Semiconductor Inc. (Beijing Sales Office) Suite 1721, Jinyu Tower, A129 West Xuan Wu Men Street, Xicheng District, Beijing, China 100031 Tel: 86-10-6641-0030, 86-10-6641-7751, 86-10-6641-7752 Fax: 86-10-6641-0125 Holtek Semiconductor Inc. (Chengdu Sales Office) 709, Building 3, Champagne Plaza, No.97 Dongda Street, Chengdu, Sichuan, China 610016 Tel: 86-28-6653-6590 Fax: 86-28-6653-6591 Holmate Semiconductor, Inc. (North America Sales Office) 46729 Fremont Blvd., Fremont, CA 94538 Tel: 1-510-252-9880 Fax: 1-510-252-9885 http://www.holmate.com Copyright Ó 2006 by HOLTEK SEMICONDUCTOR INC. The information appearing in this Data Sheet is believed to be accurate at the time of publication. However, Holtek assumes no responsibility arising from the use of the specifications described. The applications mentioned herein are used solely for the purpose of illustration and Holtek makes no warranty or representation that such applications will be suitable without further modification, nor recommends the use of its products for application that may present a risk to human life due to malfunction or otherwise. Holtek¢s products are not authorized for use as critical components in life support devices or systems. Holtek reserves the right to alter its products without prior notification. For the most up-to-date information, please visit our web site at http://www.holtek.com.tw. Rev. 1.00 10 December 21, 2006