HOLTEK HT82V739

HT82V739
1200mW Audio Power Amp with Shutdown
Features
· Operating voltage: 2.2V to 5.5V
· Wide temperature operating range
· High signal-to-noise ratio
· Low power-on and chip enable or disable POP noise.
· Low distortion
· Low standby current
· Large output voltage swing
· Power off control
· Low power consumption
· Direct drive speaker
· Output power 1200mW at 10% THD+N into 8W
· 8-pin DIP/SOP package
(VDD=5V)
Applications
· Applied for HT36 series, HT86 series and other
Holtek products
General Description
HT82V739 is an integrated class AB mono speaker
driver contained in a 8-pin DIP/SOP package. The
HT82V739 is capable of delivering 1200mW output
power to an 8W load with less than 10% (THD+N) from a
5V power supply. The very low standby current in
shutdown mode contributes to the reduction of power
consumption of battery-powered equipments.
Block Diagram
Pin Assignment
O U T N
A u d In
O U T P
1 0 R
R
R
A M P 2
A M P 1
V R E F
B IA S
1
8
V D D
2
7
O U T P
V R E F
3
6
N C
V S S
4
5
C E
H T 8 2 V 7 3 9
8 D IP -A /S O P -A
R
V S S
V D D
O U T N
A u d In
C E
Pin Description
Pin No.
Pin Name
1
OUTN
2
3
I/O
Description
O
Negative output
Aud In
I
Audio input
VREF
O
Speaker non-inverting input voltage reference
4
VSS
¾
5
CE
I
6
NC
¾
Not connected
7
OUTP
O
Positive output
8
VDD
¾
Positive power supply
Rev. 1.20
Negative power supply, ground
Chip enable, low active
1
January 17, 2008
HT82V739
Absolute Maximum Ratings
Supply Voltage ...........................VSS-0.3V to VSS+6.0V
Storage Temperature ............................-50°C to 125°C
Input Voltage..............................VSS-0.3V to VDD+0.3V
Operating Temperature...........................-40°C to 85°C
Note: These are stress ratings only. Stresses exceeding the range specified under ²Absolute Maximum Ratings² may
cause substantial damage to the device. Functional operation of this device at other conditions beyond those listed
in the specification is not implied and prolonged exposure to extreme conditions may affect device reliability.
Electrical Characteristics
Symbol
Parameter
VSS=0V, Ta=25°C
Test Conditions
Min.
Typ.
Max.
Unit
2.2
5.0
5.5
V
¾
2.2
4.0
mA
5V
¾
3.5
6.0
mA
¾
¾
1
mA
VDD
Conditions
¾
D.C. Characteristics
VDD
Supply Voltage
¾
IDD
Quiescent Power Supply
Current
3V
VIN=0VP-P, No load
ISD
Shutdown Power Supply
Current
5V VIN=0VP-P, CE=VDD, No load
VIH
Input High Voltage for CE
¾
¾
0.7VDD
¾
VDD
V
VIL
Input Low Voltage for CE
¾
¾
0
¾
0.3VDD
V
RL=4W
198
330
¾
RL=8W
180
300
¾
RL=16W
144
240
¾
RL=4W
270
450
¾
RL=8W
240
400
¾
RL=16W
168
280
¾
RL=4W
690
1150
¾
RL=8W
570
950
¾
RL=16W
390
650
¾
RL=4W
840
1400
¾
RL=8W
720
1200
¾
RL=16W
480
800
¾
¾
145
¾
ms
¾
105
¾
ms
¾
0.3
¾
%
¾
0.18
¾
%
¾
0.13
¾
%
RL=4W
¾
66
¾
dB
RL=8W
¾
70
¾
dB
RL=16W
¾
72
¾
dB
(THD+N)/S£1%,
VIN=1kHz sinewave
3V
(THD+N)/S£10%,
VIN=1kHz sinewave
PO
Output Power
(THD+N)/S£1%,
VIN=1kHz sinewave
5V
(THD+N)/S£10%,
VIN=1kHz sinewave
mW
mW
A.C. Characteristics
tON
Enable Time
3V V =1kHz sinewave,
IN
5V No load
RL=4W
Power output=500mW,
Total Harmonic Distortion Plus
(THD+N)/S
5V
RL=8W
VIN=1kHz sinewave
Noise-to-signal Ratio
RL=16W
S/N
Rev. 1.20
Signal to Noise Ratio
VIN=1Vrms 1kHz
5V
sinewave
2
January 17, 2008
HT82V739
Functional Description
OUTP Rising Time (tR)
When CE is active low, the HT82V739 needs rising time to output fully on OUTP pin. However, the rising time depends
on C1. (*see the application circuits)
C E
O U T P
tR
Capacitor
tR
0.1mF
1mF
4.7mF
10mF
2.2V
15ms
30ms
90ms
185ms
3V
15ms
30ms
90ms
185ms
4V
15ms
30ms
90ms
185ms
Voltage
For battery based applications, power consumption is a key issue, therefore the amplifier should be turned off when in
the standby state. In order to eliminate any speaker sound bursts while turning the amplifier on, the application circuit,
which will incorporate a capacitance value of C1, should be adjusted in accordance with the speaker¢s audio frequency
response. A greater value of C1 will improve the noise burst while turning on the amplifier. The recommended operation sequence is:
Turn On: ²Aud In² signal standby (1/2 VDD) ® enable amplifier ® wait tR for amplifier ready ® ²Aud In² signal start
Turn Off: ²Aud In² signal finish ® disable amplifier ® wait tR for amplifier off ® ²Aud In² signal off
A u d In
tR
tR
C E
O U T
If the application is not powered by batteries and there is no problem with amplifier On/Off issue, a capacitor value of
0.1mF for C1 is recommended.
Rev. 1.20
3
January 17, 2008
HT82V739
THD+N VS. Output Power
· RLOAD=4W, VIN=1kHz sinewave
%
T H D + N
v s O u tp u t P o w e r
1 0 0
5 0
2 0
1 0
5
2
1
0 .5
0 .2
0 .1
0 .0 5
0 .0 2
0 .0 1
1 m
2 m
5 m
1 0 m
2 0 m
5 0 m
1 0 0 m
2 0 0 m
5 0 0 m
1
2
5
O u tp u t P o w e r (W )
· RLOAD=8W, VIN=1kHz sinewave
%
T H D + N
v s O u tp u t P o w e r
1 0 0
5 0
2 0
1 0
5
2
1
0 .5
0 .2
0 .1
0 .0 5
0 .0 2
0 .0 1
1 m
2 m
5 m
1 0 m
2 0 m
5 0 m
1 0 0 m
2 0 0 m
5 0 0 m
1
2
5
O u tp u t P o w e r (W )
· RLOAD=16W, VIN=1kHz sinewave
%
T H D + N
v s O u tp u t P o w e r
1 0 0
5 0
2 0
1 0
5
2
1
0 .5
0 .2
0 .1
0 .0 5
0 .0 2
0 .0 1
1 m
2 m
5 m
1 0 m
2 0 m
5 0 m
1 0 0 m
2 0 0 m
5 0 0 m
1
2
5
O u tp u t P o w e r (W )
Rev. 1.20
4
January 17, 2008
HT82V739
Application Circuits
A u d io In
1
C 3
1 m F
R
2
3
O U T P
Rev. 1.20
5
6
7
5
D D
8
H T 8 2 V 7 3 9
V R E F
N C
C E
V D D
C E
C 1
1 m F
A u d In
V
O U T N
C 2
4 7 m F
S P K
4
January 17, 2008
HT82V739
Package Information
8-pin DIP (300mil) Outline Dimensions
A
8
B
5
4
1
H
C
D
a
G
E
I
F
Symbol
A
Rev. 1.20
Dimensions in mil
Min.
Nom.
Max.
355
¾
375
B
240
¾
260
C
125
¾
135
D
125
¾
145
E
16
¾
20
70
F
50
¾
G
¾
100
¾
H
295
¾
315
I
335
¾
375
a
0°
¾
15°
6
January 17, 2008
HT82V739
8-pin SOP (150mil) Outline Dimensions
5
8
A
B
4
1
C
C '
G
H
D
E
Symbol
Rev. 1.20
a
F
Dimensions in mil
Min.
Nom.
Max.
A
228
¾
244
B
149
¾
157
C
14
¾
20
C¢
189
¾
197
D
53
¾
69
E
¾
50
¾
F
4
¾
10
G
22
¾
28
H
4
¾
12
a
0°
¾
10°
7
January 17, 2008
HT82V739
Product Tape and Reel Specifications
Reel Dimensions
D
T 2
A
C
B
T 1
SOP 8N
Symbol
Description
A
Reel Outer Diameter
B
Reel Inner Diameter
Dimensions in mm
330±1.0
62±1.5
13.0+0.5
-0.2
C
Spindle Hole Diameter
D
Key Slit Width
2.0±0.15
T1
Space Between Flange
12.8+0.3
-0.2
T2
Reel Thickness
18.2±0.2
Rev. 1.20
8
January 17, 2008
HT82V739
Carrier Tape Dimensions
P 0
D
P 1
t
E
F
W
C
D 1
B 0
P
K 0
A 0
SOP 8N
Symbol
Description
Dimensions in mm
W
Carrier Tape Width
12.0+0.3
-0.1
P
Cavity Pitch
8.0±0.1
E
Perforation Position
1.75±0.1
F
Cavity to Perforation (Width Direction)
5.5±0.1
D
Perforation Diameter
1.55±0.1
D1
Cavity Hole Diameter
1.5+0.25
P0
Perforation Pitch
4.0±0.1
P1
Cavity to Perforation (Length Direction)
2.0±0.1
A0
Cavity Length
6.4±0.1
B0
Cavity Width
5.20±0.1
K0
Cavity Depth
2.1±0.1
t
Carrier Tape Thickness
0.3±0.05
C
Cover Tape Width
Rev. 1.20
9.3
9
January 17, 2008
HT82V739
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http://www.holtek.com.tw
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http://www.holtek.com
Copyright Ó 2008 by HOLTEK SEMICONDUCTOR INC.
The information appearing in this Data Sheet is believed to be accurate at the time of publication. However, Holtek assumes no responsibility arising from the use of the specifications described. The applications mentioned herein are used
solely for the purpose of illustration and Holtek makes no warranty or representation that such applications will be suitable
without further modification, nor recommends the use of its products for application that may present a risk to human life
due to malfunction or otherwise. Holtek¢s products are not authorized for use as critical components in life support devices
or systems. Holtek reserves the right to alter its products without prior notification. For the most up-to-date information,
please visit our web site at http://www.holtek.com.tw.
Rev. 1.20
10
January 17, 2008