HI-SINCERITY Spec. No. : MOS200404 Issued Date : 2004.07.01 Revised Date : 2005.09.28 Page No. : 1/5 MICROELECTRONICS CORP. H04N60 Series H04N60 Series Pin Assignment Tab N-Channel Power Field Effect Transistor 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source Description This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with fast recovery time. Designed for high voltage, high speed switching applications such as power suplies, converters, power motor controls and bridge circuits. 1 2 3 3-Lead Plastic TO-220FP Package Code: F Pin 1: Gate Pin 2: Drain Pin 3: Source Features • Higher Current Rating • Lower RDS(on) • Lower Capacitances • Lower Total Gate Charge • Tighter VSD Specifications • Avalanche Energy Specified 1 2 3 H04N60 Series Symbol: D G S Absolute Maximum Ratings Symbol Parameter Value Units ID Drain to Current (Continuous) 4 A IDM Drain to Current (Pulsed) 16 A VGS Gate-to-Source Voltage (Continue) ±30 V H04N60E (TO-220AB) 70 W H04N60F (TO-220FP) 30 Total Power Dissipation (TC=25oC) PD Tj, Tstg Derate above 25°C H04N60E (TO-220AB) 0.56 H04N60F (TO-220FP) 0.2 Operating and Storage Temperature Range W/°C -55 to 150 °C EAS Single Pulse Drain-to-Source Avalanche Enrgy-Tj=25°C (VDD=100V, VGS=10V, IL=2A, L=10mH, RG=25Ω) 250 mJ TL Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds 260 °C H04N60E, H04N60F HSMC Product Specification HI-SINCERITY Spec. No. : MOS200404 Issued Date : 2004.07.01 Revised Date : 2005.09.28 Page No. : 2/5 MICROELECTRONICS CORP. Thermal Characteristics Symbol Parameter Value RθJC Thermal Resistance Junction to Case Max. RθJA Thermal Resistance Junction to Ambient Max. Units TO-220AB 1.3 TO-220FP 5 °C/W °C/W 62.5 ELectrical Characteristics (Tj=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit 600 - - V Drain-Source Leakage Current (VDS=600V, VGS=0V) - - 1 uA Drain-Source Leakage Current (VDS=480V, VGS=0V, Tj=125°C) - - 50 uA IGSSF Gate-Source Leakage Current-Forward (Vgsf=30V, VDS=0V) - - 100 nA IGSSR Gate-Source Leakage Current-Reverse (Vgsr=-30V, VDS=0V) - - -100 nA VGS(th) Gate Threshold Voltage (VDS=VGS, ID=250uA) 2 - 4 V RDS(on) Static Drain-Source On-Resistance (VGS=10V, ID=2A)* - - 2.2 Ω gFS Forward Transconductance (VDS=15V, ID=2A)* 2 - - mhos Ciss Input Capacitance - 540 - Coss Output Capacitance - 125 - Crss Reverse Transfer Capacitance - 8 - td(on) Turn-on Delay Time - 12 - - 7 - - 19 - Fall Time - 10 - Qg Total Gate Charge - 5 - Qgs Gate-Source Charge - 2.7 - Qgd Gate-Drain Charge - 2 - LD Internal Drain Inductance (Measured from the drain lead 0.25” from package to center of die) - 4.5 - nH LS Internal Drain Inductance (Measured from the drain lead 0.25” from package to source bond pad) - 7.5 - nH Min. Typ. Max. Units - - 1.6 V - ** - ns - 302 - ns V(BR)DSS IDSS tr td(off) tf Characteristic Drain-Source Breakdown Voltage (VGS=0V, ID=250uA) Rise Time Turn-off Delay Time VGS=0V, VDS=25V, f=1MHz (VDD=300V, ID=4A, RG=9.1Ω, VGS=10V)* (VDS=480V, ID=4A, VGS=10V)* pF ns nC *: Pulse Test: Pulse Width ≤300us, Duty Cycle≤2% Source-Drain Diode Symbol Characteristic VSD Forward On Voltage(1) ton Forward Turn-On Time trr Reverse Recovery Time o IS=4A, VGS=0V, TJ=25 C IS=2A, VGS=0V, dIS/dt=100A/us **: Negligible, Dominated by circuit inductance H04N60E, H04N60F HSMC Product Specification HI-SINCERITY Spec. No. : MOS200404 Issued Date : 2004.07.01 Revised Date : 2005.09.28 Page No. : 3/5 MICROELECTRONICS CORP. Characteristics Curve On-Region Characteristic Capacitance Characteristics 1000 10 VGS=10V 8 800 VGS=8V 7 Capacitance (pF) ID, Drain-Source Current (A)…. 9 VGS=6V 6 5 VGS=5V 4 Ciss 600 Crss 400 3 Coss 2 200 1 VGS=4V 0 0 0 2 4 6 8 10 0.1 1 V DS, Drain-Source Voltage (V) On Resistance Variation with Temperature 100 Drain Current Variation with Gate Voltage and Temperature 2.500 6 2.400 o VDS=10 V 2.300 ID, Drain-Source Current (A)…. RDS(ON) Normalized Drain-Source On-Resistance 10 VDS, Deain-Source Voltage (V) VGS=10V 2.200 2.100 2.000 ID=3A 1.900 1.800 1.700 Tc=25 C 5 4 3 2 1 1.600 0 1.500 0 25 50 75 100 125 o 0.0 150 Typical On-Resistance & Drain Current 2.0 3.0 4.0 5.0 6.0 7.0 8.0 Maximum Safe Operating Area 10 2.5 1ms 2.4 2.3 VGS=10V 2.2 ID, Drain Current (A) RDS(ON) Drain-Source On-Resistance... 1.0 V GS, Gate-Source Voltage (V) TC, Case Temperature ( C) VGS=15V 2.1 2.0 1.9 1.8 10ms 100ms 1 1.7 1.6 1.5 0.1 0 1 2 3 4 5 6 7 8 ID, Drain Current (A) H04N60E, H04N60F 9 10 11 12 10 100 1000 V DS, Drain-Source Voltage (V) HSMC Product Specification HI-SINCERITY Spec. No. : MOS200404 Issued Date : 2004.07.01 Revised Date : 2005.09.28 Page No. : 4/5 MICROELECTRONICS CORP. TO-220AB Dimension DIM A B C D E F G H I J K L M N O P Marking: A F B Pb Free Mark Pb-Free: " . " (Note) Normal: None H E C D E 0 4N60 Date Code H K M I 3 G N 2 O P J L Note: Green label is used for pb-free packing Pin Style: 1.Gate 2 & Tab.Drain 3.Source Material: • Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free) • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 1 Tab Control Code Min. 5.58 8.38 4.40 1.15 0.35 2.03 9.66 3.00 0.75 2.54 1.14 12.70 14.48 Max. 7.49 8.90 4.70 1.39 0.60 2.92 10.28 *16.25 *3.83 4.00 0.95 3.42 1.40 *2.54 14.27 15.87 *: Typical, Unit: mm 3-Lead TO-220AB Plastic Package HSMC Package Code: E TO-220FP Dimension Marking: A α4 α1 Pb Free Mark Pb-Free: " . " (Note) Normal: None H E O C D α3 α2 α5 Date Code G I J N 2 K 1 M L Control Code Note: Green label is used for pb-free packing Pin Style: 1.Gate 2.Drain 3.Source 3 F F 0 4N60 Material: • Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free) • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 DIM Min. A 6.48 C 4.40 D 2.34 E 0.45 F 9.80 G 3.10 I 2.70 J 0.60 K 2.34 L 12.48 M 15.67 N 0.90 O 2.00 α1/2/4/5 α3 Max. 7.40 4.90 3.00 0.80 10.36 3.60 3.43 1.00 2.74 13.60 16.20 1.47 2.96 *5o *27o *: Typical, Unit: mm 3-Lead TO-220FP Plastic Package HSMC Package Code: F Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. • HSMC reserves the right to make changes to its products without notice. • HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: • Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 • Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 H04N60E, H04N60F HSMC Product Specification HI-SINCERITY Spec. No. : MOS200404 Issued Date : 2004.07.01 Revised Date : 2005.09.28 Page No. : 5/5 MICROELECTRONICS CORP. Soldering Methods for HSMC’s Products 1. Storage environment: Temperature=10oC~35oC Humidity=65%±15% 2. Reflow soldering of surface-mount devices Figure 1: Temperature profile tP Critical Zone TL to TP TP Ramp-up TL tL Temperature Tsmax Tsmin tS Preheat Ramp-down 25 t 25oC to Peak Time Profile Feature Average ramp-up rate (TL to TP) Sn-Pb Eutectic Assembly Pb-Free Assembly <3oC/sec <3oC/sec 100oC 150oC Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) o 150 C 200oC 60~120 sec 60~180 sec <3oC/sec <3oC/sec 183oC 217oC Tsmax to TL - Ramp-up Rate Time maintained above: - Temperature (TL) - Time (tL) 60~150 sec Peak Temperature (TP) Time within 5oC of actual Peak Temperature (tP) Ramp-down Rate Time 25oC to Peak Temperature o o 60~150 sec 240 C +0/-5 C 260oC +0/-5oC 10~30 sec 20~40 sec <6oC/sec <6oC/sec <6 minutes <8 minutes Peak temperature Dipping time 245oC ±5oC 5sec ±1sec 3. Flow (wave) soldering (solder dipping) Products Pb devices. Pb-Free devices. H04N60E, H04N60F o o 260 C +0/-5 C 5sec ±1sec HSMC Product Specification