HI-SINCERITY Spec. No. : MOS200605 Issued Date : 2006.02.01 Revised Date : 2006.02.07 Page No. : 1/5 MICROELECTRONICS CORP. H2N7002SN H2N7002SN Pin Assignment & Symbol 3 N-Channel MOSFET (60V, 0.2A) 1 2 3-Lead Plastic SOT-323 Package Code: SN Pin 1: Gate 2: Source 3: Drain D Description G N-channel enhancement-mode MOS transistor. S Absolute Maximum Ratings Drain-Source Voltage ............................................................................................................................................ 60 V Drain-Gate Voltage (RGS=1MΩ) ............................................................................................................................. 60 V Gate-Source Voltage ........................................................................................................................................... ±20 V Continuous Drain Current (TA=25°C)(1) ............................................................................................................. 200 mA Continuous Drain Current (TA=100°C)(1) ........................................................................................................... 115 mA Pulsed Drain Current (TA=25°C)(2) .................................................................................................................... 800 mA Total Power Dissipation (TC=25°C).................................................................................................................. 200 mW Derate above 25°C .................................................................................................................................. 0.16 mW / °C Storage Temperature................................................................................................................................ -55 to 150 °C Operating Junction Temperature .............................................................................................................. -55 to 150 °C Lead Temperature, for 10 second Soldering ...................................................................................................... 260 °C Thermal Characteristics Thermal Resistance, Junction-to-Ambient................................................................................................... 625 °C / W Electrical Characteristics (TA=25°C) Parameter Symbol Test Conditions Min Typ. Max Unit Drain-Source Breakdown Voltage BVDSS VGS=0, ID=10uA 60 - - V Gate Threshold Voltage VGS(th) VDS=2.5V, ID=0.25mA 1 - 2.5 V Gate Source Leakage Current, Forward IGSS/F VGS=+20V, VDS=0 - - 100 nA Gate Source leakage Current, Reverse IGSS/R VGS=-20V, VDS=0 - - -100 nA Zero Gate Voltage Drain Current IDSS VDS=60V, VGS=0 - - 1 uA On-State Drain Current ID(ON) VDS>2VDS(ON), VGS=10V 500 - - mA ID=50mA, VGS=5V - - 0.375 V ID=500mA, VGS=10V - - 3.75 V VGS=4.5V, ID=75mA - 3.3 5.3 Ω VGS=5V, ID=50mA - 2.8 5 Ω VGS=10V, ID=500mA - 2.3 5 Ω 80 - - mS - 20 - nS - 40 - nS - - 50 pF - - 25 pF - - 5 pF Static Drain-Source On-State Voltage Static Drain-Source On-State Resistance VDS(ON) RDS(ON) Forward Transconductance GFS VDS>2VDS(ON), ID=200mA Turn-on Delay Time td(on) Turn-off Delay Time td(off) (VDD=50V, RD=250Ω, VGS=10V, RG=50Ω) Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS=25V, VGS=0, f=1MHz (1)The Power Dissipation of the package may result in a continuous drain current. (2)Pulse Width≤300us, Duty cycle≥2%. H2N7002SN HSMC Product Specification HI-SINCERITY Spec. No. : MOS200605 Issued Date : 2006.02.01 Revised Date : 2006.02.07 Page No. : 2/5 MICROELECTRONICS CORP. Characteristics Curve Output Characteristics 0.9 6V 7V VGS=10V 0.7 0.6 0.5 5V 0.4 VDS=10V 0.6 TJ=-55ºC Tj=150ºC 0.4 0.3 0.3 0.2 0.1 4V 0.2 3V 0.1 0 0 0 2 4 6 8 10 0 2 4 VDS(V) Typical Transconductance 8 10 12 On-resistance & Drain Current 3 0.45 VDS=7V 0.4 2.5 VGS=4.5V 0.35 Tj=-55ºC 0.3 RDS(on) (Ω) gFS(S) 6 VGS(V) 0.5 Tj=25ºC 0.25 0.2 2 1.5 Tj=150ºC 0.15 0.1 VGS=10V 1 0.5 0.05 0 0 0 0.2 0.4 0.6 0.8 1 0 ID(A) 0.1 0.2 0.3 0.4 0.5 0.6 ID (A) Capacitance On-Resistance Variation With Temperature 2.5 70 60 RDS(on) (m Ω ) 2 50 C(pF) Tj=25ºC 0.5 ID(A) ID(A) 0.7 9V 8V 0.8 Transfer Characteristics 0.8 1 40 Ciss 30 20 1 0.5 Coss 10 VGS=10V ID=0.5A 1.5 Crss 0 0 0 10 VDS(V) 30 40 -50 50 0 50 100 Source-Drain Diode Forward Voltage 0.8 0.7 1.1 VGS=0 ID=0.25mA 1 150 Tj Junction Temperature Breakdown Voltage Variation With Temperature 1.2 Tj=150ºC Tj=25ºC 0.6 0.5 Is(mA) BVDSS(V) 20 0.9 0.8 Tj=-55ºC 0.4 0.3 0.2 0.7 0.1 0 0.6 -50 0 50 Tj Junction Temperature H2N7002SN 100 150 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD(V) HSMC Product Specification HI-SINCERITY Spec. No. : MOS200605 Issued Date : 2006.02.01 Revised Date : 2006.02.07 Page No. : 3/5 MICROELECTRONICS CORP. Power Derating Safe Operating Area 1 10 0.9 0.8 PD ,Power Dissipation (W) 1 Id (A) 100us 1ms 0.1 10ms 100ms 0.7 0.6 0.5 0.4 0.3 0.01 0.2 DC 0.1 0 0.001 1 10 0 100 Vds (V) 25 50 75 100 125 150 175 T,EMPERATURE Thermal Response 1 r(t) ,Transient Thermal Resistance (normalized) 0.5 0.2 0.1 0.1 0.05 0.02 0.01 single pluse 0.01 0.1 1 10 100 1000 t ,Time(ms) H2N7002SN HSMC Product Specification HI-SINCERITY Spec. No. : MOS200605 Issued Date : 2006.02.01 Revised Date : 2006.02.07 Page No. : 4/5 MICROELECTRONICS CORP. SOT-323(SC-70) Dimension DIM A A1 bp C D E e e1 He Lp Q v w θ Marking: 3 A Q A1 1 7 0 2 C Pb Free Mark Pb-Free: " " (Note) Normal: None Lp 2 detail Z bp e1 W Note: Pb-free product can distinguish by the green label or the extra description on the right side of the label. B e E D A Z Pin Style: 1.Gate 2.Source 3.Drain θ He 0 1 v A Material: • Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free) • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Min. 0.80 0.00 0.30 0.10 1.80 1.15 1.3 0.65 2.00 0.15 0.13 0.2 0.2 10° Max. 1.10 0.10 0.40 0.25 2.20 1.35 2.25 0.45 0.23 0° *: Typical, Unit: mm 2 mm scale 3-Lead SOT-323 Plastic Surface Mounted Package HSMC Package Code: SN Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. • HSMC reserves the right to make changes to its products without notice. • HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: • Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-2521-2056 Fax: 886-2-2563-2712 • Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-598-3621~5 Fax: 886-3-598-2931 H2N7002SN HSMC Product Specification HI-SINCERITY Spec. No. : MOS200605 Issued Date : 2006.02.01 Revised Date : 2006.02.07 Page No. : 5/5 MICROELECTRONICS CORP. Soldering Methods for HSMC’s Products 1. Storage environment: Temperature=10oC~35oC Humidity=65%±15% 2. Reflow soldering of surface-mount devices Figure 1: Temperature profile tP Critical Zone TL to TP TP Ramp-up TL tL Temperature Tsmax Tsmin tS Preheat 25 Ramp-down t 25oC to Peak Time Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly <3 C/sec <3oC/sec - Temperature Min (Tsmin) 100oC 150oC - Temperature Max (Tsmax) 150oC 200oC 60~120 sec 60~180 sec <3oC/sec <3oC/sec 183oC 217oC Average ramp-up rate (TL to TP) o Preheat - Time (min to max) (ts) Tsmax to TL - Ramp-up Rate Time maintained above: - Temperature (TL) - Time (tL) 60~150 sec 260oC +0/-5oC 10~30 sec 20~40 sec <6oC/sec <6oC/sec <6 minutes <8 minutes Peak temperature Dipping time Pb devices. 245 C ±5 C 10sec ±1sec Pb-Free devices. 260 C ±5 C 10sec ±1sec Time within 5oC of actual Peak Temperature (tP) Ramp-down Rate Time 25oC to Peak Temperature o 60~150 sec 240 C +0/-5 C Peak Temperature (TP) o 3. Flow (wave) soldering (solder dipping) Products H2N7002SN o o o o HSMC Product Specification