HI-SINCERITY Spec. No. : MOS200508 Issued Date : 2005.08.01 Revised Date : 2005.10.06 Page No. : 1/4 MICROELECTRONICS CORP. H9926S / H9926CS Dual N-Channel Enhancement-Mode MOSFET (20V, 6A) 8 • 7 6 5 8-Lead Plastic SO-8 Package Code: S 1 2 3 4 H9926S Symbol & Pin Assignment Description 5 This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced trench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V-10V) 6 4 3 Q1 7 8 2 1 Q2 Pin 1: Source 2 Pin 2: Gate 2 Pin 3: Source 1 Pin 4: Gate 1 Pin 5 / 6: Drain 1 Pin 7 / 8: Drain 2 H9926CS Symbol & Pin Assignment Features 5 • RDS(on)=40mΩ@VGS=2.5V, ID=5.2A; RDS(on)=30mΩ@VGS=4.5V, ID=6A • High Density Cell Design for Ultra Low On-Resistance • High Power and Current Handing Capability • Fully Characterized Avalanche Voltage and Current • Ideal for Li ion Battery Pack Applications 6 4 3 Q1 7 8 2 1 Q2 Pin 1: Source 2 Pin 2: Gate 2 Pin 3: Source 1 Pin 4: Gate 1 Pin 5 / 6 / 7 / 8: Drain Applications • Battery Protection • Load Switch • Power Management Absolute Maximum Ratings (T =25 C, unless otherwise noted) o A Symbol Parameter Ratings Units VDS Drain-Source Voltage 20 V VGS Gate-Source Voltage ±12 V 6 A 30 A Total Power Dissipation @TA=25 C 2 W Total Power Dissipation @TA=75oC 1.3 W -55 to +150 °C 62.5 °C/W ID IDM Drain Current (Continuous) Drain Current (Pulsed) *1 o PD Tj, Tstg RθJA Operating and Storage Temperature Range Thermal Resistance Junction to Ambient *2 *1: Maximum DC current limited by the package *2: 1-in2 2oz Cu PCB board H9926S, H9926CS HSMC Product Specification HI-SINCERITY Spec. No. : MOS200508 Issued Date : 2005.08.01 Revised Date : 2005.10.06 Page No. : 2/4 MICROELECTRONICS CORP. Electrical Characteristics (TA=25°C, unless otherwise noted) Symbol Characteristic Test Conditions Min. Typ. Max. Unit VGS=0V, ID=250uA 20 - - V VGS=2.5V, ID=5.2A - 34 40 VGS=4.5V, ID=6A - 25 30 0.6 - 1.5 V • Static BVDSS Drain-Source Breakdown Voltage RDS(on) Drain-Source On-State Resistance VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA IDSS Zero Gate Voltage Drain Current VDS=20V, VGS=0V - - 1 uA IGSS Gate-Body Leakage Current VGS=±12V, VDS=0V - - ±100 nA gFS Forward Transconductance VDS=10V, ID=6A 7 13 - S - 4.86 - - 0.92 - mΩ • Dynamic Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge - 1.4 - Ciss Input Capacitance - 562 - Coss Output Capacitance - 106 - Crss Reverse Transfer Capacitance - 75 - td(on) Turn-on Delay Time - 8.1 - tr Turn-on Rise Time VDD=10V, ID=1A, VGS=4.5V - 9.95 - td(off) Turn-off Delay Time RGEN=6Ω - 21.85 - - 5.35 - - - 1.7 A - - 1.2 V tf VDS=10V, ID=6A, VGS=4.5V VDS=8V, VGS=0V, f=1MHz nC pF ns Turn-off Fall Time • Drain-Source Diode Characteristics IS VSD Maximum Diode Forward Current Drain-Source Diode Forward Voltage VGS=0V, IS=1.7A Note: Pulse Test: Pulse Width ≤300us, Duty Cycle≤2% Switching Test Circuit Switching Waveforms ton VDD td(on) tr toff td(off) tf 90% 90% RD VIN D VOUT 10% Output, VOUT 10% Inverted VGEN 90% RG 50% G 50% S Input, VIN H9926S, H9926CS 10% Pulse Width HSMC Product Specification HI-SINCERITY Spec. No. : MOS200508 Issued Date : 2005.08.01 Revised Date : 2005.10.06 Page No. : 3/4 MICROELECTRONICS CORP. SO-8 Dimension A DIM A B C D E F G H I J K L M N O H9926S Marking: G Pb Free Mark Pb-Free: " . " (Note) H Normal: None 8 7 B 6 C Pin1 Index 2 3 I 5 Pin 1 Index Date Code H 4 H9926CS Marking: E Pb Free Mark Pb-Free: " . " (Note) H Normal: None M Pin 1 Index Date Code L N O F 8-Lead SO-8 Plastic Surface Mounted Package HSMC Package Code: S S 9 9 2 6 C K Part A Part A Control Code Pin Style: 1.S2 2.G2 3.S1 4.G1 5 & 6.D1 7 & 8.D2 J D S 9 9 2 6 Control Code Pin Style: 1.S2 2.G2 3.S1 4.G1 5 & 6 & 7 & 8.D Min. 4.85 3.85 5.80 1.22 0.37 3.74 1.45 4.80 0.05 0.30 0.19 0.37 0.23 0.08 0.00 Max. 5.10 3.95 6.20 1.32 0.47 3.88 1.65 5.10 0.20 0.70 0.25 0.52 0.28 0.13 0.15 *: Typical, Unit: mm Note: Green label is used for pb-free packing Material: • Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free) • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. • HSMC reserves the right to make changes to its products without notice. • HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: • Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 • Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 H9926S, H9926CS HSMC Product Specification HI-SINCERITY Spec. No. : MOS200508 Issued Date : 2005.08.01 Revised Date : 2005.10.06 Page No. : 4/4 MICROELECTRONICS CORP. Soldering Methods for HSMC’s Products 1. Storage environment: Temperature=10oC~35oC Humidity=65%±15% 2. Reflow soldering of surface-mount devices Figure 1: Temperature profile tP Critical Zone TL to TP TP Ramp-up TL tL Temperature Tsmax Tsmin tS Preheat Ramp-down 25 t 25oC to Peak Time Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly <3oC/sec <3oC/sec - Temperature Min (Tsmin) 100oC 150oC - Temperature Max (Tsmax) 150oC 200oC 60~120 sec 60~180 sec <3oC/sec <3oC/sec 183oC 217oC Average ramp-up rate (TL to TP) Preheat - Time (min to max) (ts) Tsmax to TL - Ramp-up Rate Time maintained above: - Temperature (TL) - Time (tL) 60~150 sec Peak Temperature (TP) Time within 5oC of actual Peak Temperature (tP) Ramp-down Rate Time 25oC to Peak Temperature o o 60~150 sec 240 C +0/-5 C 260oC +0/-5oC 10~30 sec 20~40 sec <6oC/sec <6oC/sec <6 minutes <8 minutes Peak temperature Dipping time 245oC ±5oC 5sec ±1sec 3. Flow (wave) soldering (solder dipping) Products Pb devices. Pb-Free devices. H9926S, H9926CS o o 260 C +0/-5 C 5sec ±1sec HSMC Product Specification