HSMC H9926CTS

HI-SINCERITY
Spec. No. : MOS200513
Issued Date : 2005.10.01
Revised Date : 2005.10.06
Page No. : 1/4
MICROELECTRONICS CORP.
H9926TS / H9926CTS
Dual N-Channel Enhancement-Mode MOSFET (20V, 6A)
8-Lead Plastic TSSOP-8L
Package Code: TS
H9926TS Symbol & Pin Assignment
Description
8
7
6
5
3
4
Pin 1: Drain 1
Pin 2 / 3: Source 1
Pin 4: Gate 1
Pin 5: Gate 2
Pin 6 / 7: Source 2
Pin 8: Drain 2
Q2
This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced
trench process. It has been optimized for power management applications with a
wide range of gate drive voltage (2.5V-10V)
Q1
1
2
H9926CTS Symbol & Pin Assignment
Features
8
• RDS(on)=40mΩ@VGS=2.5V, ID=5.2A; RDS(on)=30mΩ@VGS=4.5V, ID=6A
• High Density Cell Design for Ultra Low On-Resistance
• High Power and Current Handing Capability
• Fully Characterized Avalanche Voltage and Current
• Ideal for Li ion Battery Pack Applications
7
6
5
3
4
Pin 1: Drain
Pin 2 / 3: Source 1
Pin 4: Gate 1
Pin 5: Gate 2
Pin 6 / 7: Source 2
Pin 8: Drain
Q2
Q1
1
2
Applications
• Battery Protection
• Load Switch
• Power Management
Absolute Maximum Ratings (T =25 C, unless otherwise noted)
o
A
Symbol
Parameter
Ratings
Units
VDS
Drain-Source Voltage
20
V
VGS
Gate-Source Voltage
±12
V
6
A
30
A
Total Power Dissipation @TA=25 C
1.5
W
Total Power Dissipation @TA=75oC
0.96
W
-55 to +150
°C
83
°C/W
ID
IDM
Drain Current (Continuous)
Drain Current (Pulsed)
*1
o
PD
Tj, Tstg
RθJA
Operating and Storage Temperature Range
Thermal Resistance Junction to Ambient
*2
*1: Maximum DC current limited by the package
*2: 1-in2 2oz Cu PCB board
H9926TS, H9926CTS
HSMC Product Specification
HI-SINCERITY
Spec. No. : MOS200513
Issued Date : 2005.10.01
Revised Date : 2005.10.06
Page No. : 2/4
MICROELECTRONICS CORP.
Electrical Characteristics (TA=25°C, unless otherwise noted)
Symbol
Characteristic
Test Conditions
Min.
Typ.
Max.
Unit
VGS=0V, ID=250uA
20
-
-
V
VGS=2.5V, ID=5.2A
-
34
40
VGS=4.5V, ID=6A
-
25
30
0.6
-
1.5
V
• Static
BVDSS
Drain-Source Breakdown Voltage
RDS(on)
Drain-Source On-State Resistance
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
IDSS
Zero Gate Voltage Drain Current
VDS=20V, VGS=0V
-
-
1
uA
IGSS
Gate-Body Leakage Current
VGS=±12V, VDS=0V
-
-
±100
nA
gFS
Forward Transconductance
VDS=10V, ID=6A
7
13
-
S
-
4.86
-
-
0.92
-
mΩ
• Dynamic
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
-
1.4
-
Ciss
Input Capacitance
-
562
-
Coss
Output Capacitance
-
106
-
Crss
Reverse Transfer Capacitance
-
75
-
td(on)
Turn-on Delay Time
-
8.1
-
tr
Turn-on Rise Time
VDD=10V, ID=1A, VGS=4.5V
-
9.95
-
td(off)
Turn-off Delay Time
RGEN=6Ω
-
21.85
-
-
5.35
-
-
-
1.7
A
-
-
1.2
V
tf
VDS=10V, ID=6A, VGS=4.5V
VDS=8V, VGS=0V, f=1MHz
nC
pF
ns
Turn-off Fall Time
• Drain-Source Diode Characteristics
IS
VSD
Maximum Diode Forward Current
Drain-Source Diode Forward Voltage
VGS=0V, IS=1.7A
Note: Pulse Test: Pulse Width ≤300us, Duty Cycle≤2%
Switching
Test Circuit
Switching
Waveforms
ton
VDD
td(on)
tr
toff
td(off)
tf
90%
90%
RD
VIN
D
VOUT
10%
Output, VOUT
10%
Inverted
VGEN
90%
RG
50%
G
50%
S
Input, VIN
H9926TS, H9926CTS
10%
Pulse Width
HSMC Product Specification
HI-SINCERITY
Spec. No. : MOS200513
Issued Date : 2005.10.01
Revised Date : 2005.10.06
Page No. : 3/4
MICROELECTRONICS CORP.
TSSOP-8L Dimension
DIM
A
A1
b
C
D
E
E1
e
L
S
H9926TS Marking:
D
8
7
6
5
E1
Control Code
Data Code
Pin 1 Index
H9 9 2 6 TS
Pb Free Mark
Pb-Free: " . " (Note)
Normal: None
E
Pin Style: 1.S2 2.G2 3.S1 4.G1 5 & 6.D1 7 & 8.D2
Pin1
index
H9926CTS Marking:
3
Pb Free Mark
Detail F
R 0.15
A1
b
C
A
e
*: Typical, Unit: mm
4
Pb-Free: " . " (Note)
Normal: None
Control Code
Data Code
Pin 1 Index
H 9 9 2 6 CT S
2
Min.
Max.
1.20
0.05
0.15
0.19
0.3
0.09
0.20
2.90
3.10
6.20
6.60
4.30
4.50
0.65 BSC
0.45
0.75
0o
8o
Pin Style: 1.S2 2.G2 3.S1 4.G1 5 & 6 & 7 & 8.D
Seating
Plane
S
L
8-Lead TSSOP-8L Plastic
Surface Mounted Package
HSMC Package Code: TS
0.25
Detail F
Note: Green label is used for pb-free packing
Material:
• Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
• Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its products without notice.
• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
• Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
• Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
H9926TS, H9926CTS
HSMC Product Specification
HI-SINCERITY
Spec. No. : MOS200513
Issued Date : 2005.10.01
Revised Date : 2005.10.06
Page No. : 4/4
MICROELECTRONICS CORP.
Soldering Methods for HSMC’s Products
1. Storage environment: Temperature=10oC~35oC Humidity=65%±15%
2. Reflow soldering of surface-mount devices
Figure 1: Temperature profile
tP
Critical Zone
TL to TP
TP
Ramp-up
TL
tL
Temperature
Tsmax
Tsmin
tS
Preheat
Ramp-down
25
t 25oC to Peak
Time
Profile Feature
Sn-Pb Eutectic Assembly
Pb-Free Assembly
<3oC/sec
<3oC/sec
- Temperature Min (Tsmin)
100oC
150oC
- Temperature Max (Tsmax)
150oC
200oC
60~120 sec
60~180 sec
<3oC/sec
<3oC/sec
183oC
217oC
Average ramp-up rate (TL to TP)
Preheat
- Time (min to max) (ts)
Tsmax to TL
- Ramp-up Rate
Time maintained above:
- Temperature (TL)
- Time (tL)
60~150 sec
Peak Temperature (TP)
Time within 5oC of actual Peak
Temperature (tP)
Ramp-down Rate
Time 25oC to Peak Temperature
o
o
60~150 sec
240 C +0/-5 C
260oC +0/-5oC
10~30 sec
20~40 sec
<6oC/sec
<6oC/sec
<6 minutes
<8 minutes
Peak temperature
Dipping time
245oC ±5oC
5sec ±1sec
3. Flow (wave) soldering (solder dipping)
Products
Pb devices.
Pb-Free devices.
H9926TS, H9926CTS
o
o
260 C +0/-5 C
5sec ±1sec
HSMC Product Specification