HI-SINCERITY Spec. No. : MOS200512 Issued Date : 2005.09.01 Revised Date : 2005.09.22 Page No. : 1/4 MICROELECTRONICS CORP. HIRF740 / HIRF740F HIRF740 Series Pin Assignment Tab N-Channel Power MOSFET (400V, 10A) 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source Description This N-Channel MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. 1 2 Features 3-Lead Plastic TO-220FP Package Code: F Pin 1: Gate Pin 2: Drain Pin 3: Source • Dynamic dv/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling • Simple Drive Requirements 1 Thermal Characteristics Symbol 3 2 3 HIRF740 Series Symbol Parameter Value RθJC Thermal Resistance Junction to Case Max. RθJA Thermal Resistance Junction to Ambient Max. Units TO-220AB 1.71 TO-220FP 3.3 D °C/W G °C/W 62 S Absolute Maximum Ratings Symbol VDSS ID Parameter Value Units Drain-Source Voltage 400 V Drain to Current (Continuous)(VGS@10V, TC=25oC) 10 A Drain to Current (Continuous)(VGS@10V, TC=100 C) 6.3 A *1 40 A o IDM Drain to Current (Pulsed) VGS Gate-to-Source Voltage (Continue) ±20 V Total Power Dissipation TO-220AB TO-220FP 74 38 W Derate above 25°C TO-220AB TO-220FP 0.59 0.3 W/°C Single Pulse Avalanche Energy*2 520 mJ 10 A 13 mJ 4 V/ns -55 to 150 °C 300 °C PD EAS IAR EAR dv/dt TJ,Tstg TL Avalanche Current *1 *1 Repetitive Avalanche Energy *3 Peak Diode Recovery Operating Junction and Storage Temperature Range Maximum Lead Temperature for Soldering Purposes, 1.6mm from case for 10 seconds *1: Repetitive rating; pulse width limited by max. junction temperature *2: VDD=50V, starting Tj=25°C, L=9.1mH, RG=25Ω, IAS=10A *3: ISD≤10A, di/dt≤120A/us, VDD≤V(BR)DSS, TJ≤150°C HIRF740, HIRF740F HSMC Product Specification HI-SINCERITY Spec. No. : MOS200512 Issued Date : 2005.09.01 Revised Date : 2005.09.22 Page No. : 2/4 MICROELECTRONICS CORP. ELectrical Characteristics (Tj=25°C, unless otherwise specified) Symbol V(BR)DSS Characteristic Drain-Source Breakdown Voltage (VGS=0V, ID=250uA) ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient (Reference to 25 C, ID=1mA) o IDSS Drain-Source Leakage Current (VDS=400V, VGS=0V) Min. Typ. Max. Unit 400 - - V - 0.49 - V/oC - - 25 uA 250 uA Drain-Source Leakage Current (VDS=320V, VGS=0V, Tj=125°C) IGSSF Gate-Source Leakage Current-Forward (Vgsf=20V, VDS=0V) - - 100 nA IGSSR Gate-Source Leakage Current-Reverse (Vgsr=-20V, VDS=0V) - - -100 nA VGS(th) Gate Threshold Voltage (VDS=VGS, ID=250uA) 2 - 4 V - - 0.55 Ω 5.8 - - S - 1400 - - 330 - RDS(on) Static Drain-Source On-Resistance (VGS=10V, ID=6A) *4 *4 gFS Forward Transconductance (VDS=50V, ID=6A) Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance - 120 - td(on) Turn-on Delay Time - 14 - - 27 - - 50 - - 24 - - - 63 - - 9 tr td(off) tf Qg VDS=25V, VGS=0V, f=1MHz Rise Time (VDD=200V, ID=10A, RG=9.1Ω, RD=20Ω)*4 Turn-off Delay Time Fall Time Total Gate Charge (VDS=320V, ID=10A, VGS=10V) *4 pF ns nC Qgs Gate-Source Charge Qgd Gate-Drain Charge - - 32 LD Internal Drain Inductance (Measured from the drain lead 0.25” from package to center of die) - 4.5 - nH LS Internal Source Inductance (Measured from the drain lead 0.25” from package to source bond pad) - 7.5 - nH Min. Typ. - - 10 A - - 40 A - 370 790 ns - 3.8 8.2 uC - - 2 V - ** - *4: Pulse Test: Pulse Width≤300us, Duty Cycle≤2% Source-Drain Diode Symbol Characteristic IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode)*1 trr Reverse Recovery Time Qrr Reverse Recovery Charge VSD Diode Forward Voltage ton Forward Turn-On Time D MOSFET symbol showing the integral reverse PN junction diode Max. Units G S IF=10A, di/dt=100A/us, TJ=25°C*4 IS=10A, VGS=0V, TJ=25°C (*4) **: Negligible, Dominated by circuit inductance HIRF740, HIRF740F HSMC Product Specification HI-SINCERITY Spec. No. : MOS200512 Issued Date : 2005.09.01 Revised Date : 2005.09.22 Page No. : 3/4 MICROELECTRONICS CORP. TO-220AB Dimension DIM A B C D E F G H I J K L M N O P Marking: A F B Pb Free Mark Pb-Free: " . " (Note) Normal: None H E C D I RF 740 Date Code H K M I 3 G N 2 O P Note: Green label is used for pb-free packing Pin Style: 1.Gate 2 & Tab.Drain 3.Source Material: • Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free) • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 1 Tab Control Code J L Min. 5.58 8.38 4.40 1.15 0.35 2.03 9.66 3.00 0.75 2.54 1.14 12.70 14.48 Max. 7.49 8.90 4.70 1.39 0.60 2.92 10.28 *16.25 *3.83 4.00 0.95 3.42 1.40 *2.54 14.27 15.87 *: Typical, Unit: mm 3-Lead TO-220AB Plastic Package HSMC Package Code: E TO-220FP Dimension Marking: A α4 α1 Pb Free Mark Pb-Free: " . " (Note) Normal: None H E O C D α3 α2 α5 Date Code G I J N 2 K 1 M Control Code Note: Green label is used for pb-free packing Pin Style: 1.Gate 2.Drain 3.Source 3 F I RF 740 Material: • Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free) • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 DIM Min. A 6.48 C 4.40 D 2.34 E 0.45 F 9.80 G 3.10 I 2.70 J 0.60 K 2.34 L 12.48 M 15.67 N 0.90 O 2.00 α1/2/4/5 α3 L Max. 7.40 4.90 3.00 0.80 10.36 3.60 3.43 1.00 2.74 13.60 16.20 1.47 2.96 *5o *27o *: Typical, Unit: mm 3-Lead TO-220FP Plastic Package HSMC Package Code: F Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. • HSMC reserves the right to make changes to its products without notice. • HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: • Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 • Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 HIRF740, HIRF740F HSMC Product Specification HI-SINCERITY Spec. No. : MOS200512 Issued Date : 2005.09.01 Revised Date : 2005.09.22 Page No. : 4/4 MICROELECTRONICS CORP. Soldering Methods for HSMC’s Products 1. Storage environment: Temperature=10oC~35oC Humidity=65%±15% 2. Reflow soldering of surface-mount devices Figure 1: Temperature profile tP Critical Zone TL to TP TP Ramp-up TL tL Temperature Tsmax Tsmin tS Preheat Ramp-down 25 t 25oC to Peak Time Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly <3 C/sec <3oC/sec - Temperature Min (Tsmin) 100oC 150oC - Temperature Max (Tsmax) 150oC 200oC 60~120 sec 60~180 sec <3oC/sec <3oC/sec 183oC 217oC Average ramp-up rate (TL to TP) o Preheat - Time (min to max) (ts) Tsmax to TL - Ramp-up Rate Time maintained above: - Temperature (TL) - Time (tL) 60~150 sec Peak Temperature (TP) Time within 5oC of actual Peak Temperature (tP) Ramp-down Rate Time 25oC to Peak Temperature o o 60~150 sec 240 C +0/-5 C 260oC +0/-5oC 10~30 sec 20~40 sec <6oC/sec <6oC/sec <6 minutes <8 minutes Peak temperature Dipping time 245 C ±5 C 5sec ±1sec 3. Flow (wave) soldering (solder dipping) Products Pb devices. Pb-Free devices. HIRF740, HIRF740F o o o o 260 C +0/-5 C 5sec ±1sec HSMC Product Specification