LL4150 HIGH-SPEED SWITCHING DIODE FEATURES ● High reliability ● High forward current capability DL - 35 APPLICATIONS ● High speed switch and general purpose use in computer and industrial applications .063(1.6) .055(1.4) .020(0.5) .012(0.3) CONSTRUCTION .020(0.5) .012(0.3) .146(3.7) .130(3.3) ● Silicon epitaxial planar Dimensions in inches and (millimeters) ABSOLUTE MAXIMUM RATINGS (TJ=25℃) Symbol Value Unit VRRM 100 V VR 75 V tp=1uS IFSM 75 IF 75 A mA VR=0 IFAV 53 mA Power dissipation Junction temperature PV 300 mW Storge temperature range TsTg -65 ~ +175 ℃ ℃ Test Conditions Symbol Value Unit On PC board 50mm*50mm*1.6mm RthJA 500 K/W Parameter Test Conditions Type Repetitive peak reverse voltage Reverse Vltage Peak forward surge current Forward current Average forward current TJ MAXIMUM THERMAL RESISTANCE Parameter Junction ambient ELECTRICAL CHARACTERISTICS Parameter Forward voltage Reverse current Diode capacitance Reverse recovery time (TJ=25℃) TJ=25℃ Test Conditions Symbol Min Typ Max Unit IF=1mA VF 0.54 0.62 V IF=10mA VF 0.66 0.74 V IF=50mA VF 0.76 0.86 V IF=100mA VF 0.82 0.92 V IF=200mA VF 0.87 1.0 V VR=50V IR 100 nA VR=50V, Tj=150℃ IR 100 uA VR=0, f=1MHZ, VHF=50mA CD 2.5 pF IF= IR=10…100mA,RL=100Ω trr 4 ns ~ 425 ~ RATING AND CHARACTERISTIC CURVES LL4150 FIG. 2 -FORWARD CURRENT VS.FORWARD VOLTAGE FIG. 1 - MAXIMUM PERMISSIBLE CONTINUOUS FORWARD CURRENT VS. AMBIENT TEMPERATURE 600 TJ=175°C TYPICAL VALUES 400 300 400 IF (m A) IF (m A) TJ=25°C TYPICAL VALUES 200 200 100 0 0 0 100 200 Tamb(°C) 2 1 0 VF (V) FIG. 4 -DIODE CAPACITANCE VS. REVERSE VOLTAGE (TYPICAL VALUES) FIG.3-REVERSE CURRENT VS. JUNCTION TEMPERATURE 1000 1.2 100 IR (uA) 1.0 VR=75V TYPICAL VALUES 10 Cd (pF) 0.8 1 0.6 VR=20V TYPICAL VALUES f=1MHZ,TJ=25°C 0.1 0.4 0 0.01 10 VR(V) 0 100 TJ((°C) 200 ~ 426 ~ 20