LL914 FAST SWITCHING DIODE FEATURES ● High reliability DL - 35 ● High conductance ● Fast switching speed (trr≤4ns) APPLICATIONS ● For general purpose swiching applications .063(1.6) .055(1.4) .020(0.5) .012(0.3) CONSTRUCTION .020(0.5) .012(0.3) .146(3.7) .130(3.3) ● Silicon epitaxial planar Dimensions in inches and (millimeters) ABSOLUTE MAXIMUM RATING (TJ=25℃) Parameter Test Conditions Symbol Value Unit Non repetitive peak reverse voltage VRM 100 V Repetitive peak reverse voltage Working peak reverse voltage DC blocking voltage RMS reverse voltage Forward current VRRM 75 V VRWM 75 VR 75 V V Average rectified current Non repetitive peak forward surge current VR(RMS) 53 V IF 300 mA IFAV 200 mA A Half wave rectification with resistive load and f>50MHz t=1s IFSM 1 t=1us IFSM 4 A I=4mm TL=25℃ Pd 500 mW TsTg -65 ~ +175 ℃ Test Conditions Symbol Value Unit I=4mm TL=constant RthJA 300 K/W Power dissipation Storge temperature range MAXIMUM THERMAL RESISTANCE Parameter Junction ambient ELECTRICAL CHARACTERISTICS (TJ=25℃) TJ=25℃ Test Conditions Symbol IF=10mA VF 1 V VR=20V IR 25 nA VR=20V, Tj=150℃ IR 50 uA VR=75V IR 5 uA Breakdown voltage IR=100uA VR Diode capacitance VR=0, f=1MHZ CD 4 pF IF=10mA to IR=1mA,VR=6V,RL=100Ω trr 4 ns Parameter Forward voltage Peak reverse current Reverse recovery time ~ 421 ~ Min Typ Max 100 Unit V RATING AND CHARACTERISTIC CURVES LL914 FIG. 2 -FORWARD CURRENT VS.FORWARD VOLTAGE FIG. 1 - MAXIMUM PERMISSIBLE CONTINUOUS FORWARD CURRENT VS. AMBIENT TEMPERATURE 600 100 TJ=25°C TYPICAL VALUES 400 IF (m A) IF (m A) 50 TJ=25°C TYPICAL VALUES 200 TJ=25°C MAXIMUM VALUES 0 0 100 200 0 2 1 0 Tamb(°C) VF (V) FIG.3-REVERSE CURRENT VS. JUNCTION TEMPERATURE FIG. 4 -DIODE CAPACITANCE VS. REVERSE VOLTAGE (TYPICAL VALUES) 1000 1.2 VR=75V MAXIMUM VALUES 100 IR (uA) 1.0 10 Cd (pF) VR=75V TYPICAL VALUES 0.8 1 0.6 VR=20V TYPICAL VALUES f=1MHZ,TJ=25°C 0.1 0.4 0 0.01 0 100 TJ((°C) 200 ~ 422 ~ 10 VR(V) 20