ETC 6SD106EI

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Data Sheet 6SD106E
Six-pack SCALE Driver 6SD106E
for IGBTs and Power MOSFETs
Description
The
SCALE
drivers
from
CONCEPT are based on a chip
set
that
was
developed
specifically for the reliable
driving and safe operation of
IGBTs and power MOSFETs.
The name “SCALE” is an acronym for
the most outstanding properties of the
SCALE series of drivers:
IGD
LDI
IGD
LDI = Logic to Driver Interface
IGD = Intelligent Gate Driver
SCALE = Scaleable, Compact, All purpose, Low cost and Easy to use.
The SCALE driver is a winning project of the competition organized by “Technology
Center Switzerland 1998”. And ABB Switzerland AG honored the development of the
SCALE driver by distinguishing it as the “best power electronics project in 1998”.
Product Highlights
Applications
✔ Suitable for IGBTs and power MOSFETs
✔ Short circuit and overcurrent protection
✔ Extremely reliable, long service life
✔ High gate current of ±6A
✔ Electrical isolation of 4000V
✔ Electrically isolated status acknowledgement
✔ Monitoring of power supply and self-monitoring
✔ Switching frequency DC to >100kHz
✔ Duty cycle: 0... 100%
✔ High dv/dt immunity, guaranteed >100,000V/µs
✔ Complete with DC/DC converter
AC
✔ Inverters
✔ Motor drive technology
✔ Traction
✔ Railroad power supplies
✔ Converters
✔ Power engineering
✔ Switched-mode power supplies
✔ Radiology and laser technology
✔ DC/DC converter
✔ Research
✔ RF generators and converters
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Data Sheet 6SD106E
Block Diagram
Rth
IGD
VDD
Rg
Viso1
LDI
Rth
GND
IGD
Rg
Viso2
VDC
Viso1
PWM
oscillator
Viso2
GND
Interface on
Electronic Level
Electrical
Isolation
Driver on
Power Level
Power
Semiconductor
(external)
SCALE Driver Module
Fig. 1 Block diagram shows 2 channels (i.e. one third) of the 6SD106E
The block diagram shows two channels (i.e. one third) of the 6SD106E six-pack
driver. There is only one PWM oscillator, whereas all other components are present in
triplicate.
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Data Sheet 6SD106E
Pin Designation
Pin Des.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
Function
GND Ground of the power supply
U_SO2 Phase U, Status output channel 2
U_Mod Phase U, Mode input
U_RC2 Phase U, RC network channel 2
U_InB Phase U, Input B
U_InA Phase U, Input A
U_RC1 Phase U, RC network channel 1
U_VL Phase U, Logic level/Reset
U_SO1 Phase U, Status output channel 1
GND Ground of DC/DC converter
GND Ground of DC/DC converter
VDC
+15V for DC/DC converter
VDC
+15V for DC/DC converter
V_SO2 Phase V, Status output channel 2
V_Mod Phase V, Mode input
V_RC2 Phase V, RC network channel 1
V_InB Phase V, Input B
V_InA Phase V, Input A
V_RC1 Phase V, RC network channel 1
V_VL Phase V, Logic level/Reset
V_SO1 Phase V, Status output channel 1
GND Ground of the power supply
GND Ground of the power supply
VDD
+15V for electronic input side
VDD
+15V for electronic input side
W_SO2 Phase W, Status output channel 2
W_Mod Phase W, Mode input
W_RC2 Phase W, RC network channel 2
W_InB Phase W, Input B
W_InA Phase W, Input A
W_RC1 Phase W, RC network channel 1
W_VL Phase W, Logic level/Reset
W_SO1 Phase W, Status output channel 1
GND Ground of the power supply
Pin Des.
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
Function
U_C2
U_Rth2
U_E2
U_G2
Phase U, Collector sense ch. 2
Phase U, Reference resistor ch. 2
Phase U, Emitter channel 2
Phase U, Gate channel 2
Free
Free
U_C1 Phase U, Collector sense ch. 1
U_Rth1 Phase U, Reference resistor ch. 1
U_E1 Phase U, Emitter channel 1
U_G1 Phase U, Gate channel 1
Free
Free
V_C2 Phase V, Collector sense ch. 2
V_Rth2 Phase V, Reference resistor ch. 2
V_E2 Phase V, Emitter channel 2
V_G2 Phase V, Gate channel 2
Free
Free
V_C1 Phase V, Collector sense ch. 1
V_Rth1 Phase V, Reference resistor ch. 1
V_E1 Phase V, Emitter channel 1
V_G1 Phase V, Gate channel 1
Free
Free
W_C2 Phase W, Collector sense ch. 2
W_Rth2 Phase W, Reference resistor ch. 2
W_E2 Phase W, Emitter channel 2
W_G2 Phase W, Gate channel 2
Free
Free
W_C1 Phase W, Collector sense ch. 1
W_Rth1 Phase W, Reference resistor ch. 1
W_E1 Phase W, Emitter channel 1
W_G1 Phase W, Gate channel 1
Legend:
Pins with the designation “Free” are not physically present
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Data Sheet 6SD106E
Mechanical Dimensions
Fig. 2 Front view (top) / Layout overview component side (bottom) 6SD106E
Grid of the aspect drawing on page 4 below: 2.54mm (100mil)
Recommended diameter of solder pad: Ø 1.6mm; diameter of drill holes: Ø 1.0mm
Page 4
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Data Sheet 6SD106E
Fig. 3 Side view (top) / Mechanical fixing (bottom) 6SD106E
Height X: typ. 25mm in first series (1998); typ. 16mm from 1999
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Data Sheet 6SD106E
Mechanical fixing
The 6SD106E driver has two holes each 2.7mm in diameter. They allow additional
fixing of the driver for applications requiring very high resistance to shaking/vibration
(railways, traction systems, electrically-driven vehicles, etc.). See Fig. 3 (bottom).
Absolute Maximum Ratings
Parameter
Test conditions
Supply voltage VDC
Supply voltage VDD
Logic input voltage
Gate peak current Iout
Output power DC/DC converter
Operating voltage
Test voltage (50Hz/1min)
Operating temperature
Storage temperature
to GND
Gx to Ex
total for 6 channels
continuous (see Note 8)
inputs to outputs
6SD106EN (see Note 10)
6SD106E I (see Note 10)
all types
min max
unit
0
16
0
16
0 VDD
-6
+6
6
800
4000
0 +70
-40 +85
-40 +90
Vdc
Vdc
Vdc
A
W
Vdc
VAC(eff)
°C
°C
°C
All data refer to +25°C and VDD = VDC = 15V unless otherwise specified
Electrical Characteristics
Power supply
Test conditions
Nominal supply voltage VDC
Supply current IDC
Max. supply current IDC
Output power DC/DC converter
Efficiency η
Nominal supply voltage VDD
Supply current IDD
Supply current IDD
to GND (see Note 1)
without load
Page 6
min
typ max
15
70
460
6
(see Note 2)
(see Note 3)
internal DC/DC converter
to GND
without load
at 25kHz switching frequency
85
15
35
44
unit
Vdc
mA
mA
W
%
Vdc
mA
mA
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Data Sheet 6SD106E
Electrical Characteristics (Continuation)
Power supply monitoring
Test conditions
Turn-on threshold Vth
Hysteresis on-/off
(see Note 4)
(see Note 4)
Logic inputs
Test conditions
Input voltage
all inputs (see Note 5)
Timing characteristics
Test conditions
Delay time input to output
Blocking time
turn-on tpd(on)
turn-off tpd(off)
after failure (see Note 14)
Outputs
Test conditions
Output current IG
Output rise time tr(out)
Output fall time tf(out)
Output current SOx
Output voltage rating SOx
Gx to Ex (see Note 6)
Gx to Ex (see Note 7)
Gx to Ex (see Note 7)
SOx to GND
Vce-Monitoring
Test conditions
Inputs Cx
to Ex
Electrical isolation
Test conditions
Operating voltage
Test voltage
Partial discharge extinction volt.
Creep path input-output
Creep path output-output
Maximum DV/Dt at DV =1000V
continuous (see Note 8)
(50Hz/1min) (see Note 12)
IEC270 (see Note 11)
min
typ max
11.5
0.7
Vdc
Vdc
min
typ max
unit
0
VDD
Vdc
min
typ max
unit
300
350
1
min
ns
ns
s
typ max
unit
+6
VDD
Adc
ns
ns
mA
V
min
typ max
unit
0
VDD
Vdc
min
typ max
unit
-6
100
80
1.5
(see Note 13)
(see Note 9)
unit
800
4000
>1200
12.7
7.0/12.7
100
Vdc
VAC(eff)
VAC(pk)
mm
mm
kV/ms
All data refer to +25°C and VDD = VDC = 15V unless otherwise specified
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Data Sheet 6SD106E
Operating conditions
Operating conditions
Test conditions
Operating temperature
6SD106EN (see Note 10)
6SD106E I (see Note 10)
all types
Storage temperature
min max
unit
0 +70
-40 +85
-40 +90
°C
°C
°C
Footnotes to the key data
1)
2)
3)
4)
5)
6)
7)
8)
9)
10)
11)
12)
13)
14)
The drivers have a zener diode on each channel for over-voltage protection. When the feed voltage
exceeds 16V, this protection can be subject to thermal overload.
If the specified power consumption is exceeded, this indicates an overload of the DC/DC converter. It
should be noted that these DC/DC converters are not protected against overload.
This should be considered as a recommended value. Please consult the section: “Output power and
self-heating”.
Under-voltage monitoring for protecting the power semiconductors. The voltage refers to the local supply
voltage of each individual drive channel. However, this corresponds approximately to the voltage at
VDC with respect to GND.
The input levels must never exceed the limits of the supply voltage (i.e. between GND and VDD),
otherwise latch-up of the integrated circuits LDI 00I can occur. Particular care must be taken when
driving via cables or longer leads.
The gate current must be limited to its maximum value by a gate resistor.
At a load of 39nF in series with 5.6 W (typical load of a 1200V/100A IGBT).
Maximum continuous or repeatedly-applied DC voltage or peak value of the repeatedly-applied AC
voltage between all inputs and all outputs. However, types that have been measured and selected for
higher partial-discharge voltages (e.g. for 1700V IGBT modules) are also available (see Note 11).
This specification guarantees that the drive information will be transferred reliably even at a high DClink voltage and fastest switching operations.
The application-specific self-heating of the drivers - specially at high load - must be taken into account.
The partial discharge is not measured for the standard types. Tested and selected types with guaranteed
partial-discharge immunity can be supplied for applications with maximum requirements and higher
operating voltages (such as railroad applications).
The test voltage of 4000 Vac(rms)/50Hz may be applied only once during a minute. It should be noted
that with this (strictly speaking obsolete) test method, some (minor) damage occurs to the isolation layers
due to the partial discharge. Consequently, this test is not performed at CONCEPT as a series test. In the
case of repeated isolation tests (e.g. module test, equipment test, system test) the subsequent tests should
be performed with a lower test voltage: the test voltage is reduced by 400V for each additional test. The
more modern if more elaborate partial-discharge measurement is better suited than such test methods as
it is almost entirely non-destructive.
The first series (1988) has a creep path of 7.0mm between adjacent channels. A creep path of 12.7mm
will be implemented (with 100% mechanical compatibility) in later series.
The typical blocking time after an error is 1 second. If required, versions with other blocking times
may also be supplied.
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Data Sheet 6SD106E
Application Hints
IMPORTANT INFORMATION
This data sheet contains only product-specific data. All data that apply
to the whole type series of SCALE drivers is given in the document
entitled: “Description and Application Manual for SCALE Drivers”. In
particular, this manual contains a detailed description of the concept of
the SCALE drivers, a description of the function of all terminal pins as
well as other important application hints.
Overview and application
The SCALE driver 6SD106E is a six-pack driver for power MOSFETs and IGBTs.
The terminal pins of the 6SD106E driver are arranged so that the layout can be kept
very simple and the logic signal flow (input signal ⇒ drive circuit ⇒ power transistors) is
maintained. A distance of 12.7mm is observed between the drive signal and the power
potential!
Collector sense and dimensioning of Rth
V+
1.4mA
V+
150uA
4
OVERCURRENT
Rm
Dm (2 x 1N4007)
Cx
Ca
5
5WK[
MEASURING
RGx
Gx
Rthx
IGD 001
Ex
SCALE Driver Module
Fig. 4 Collector-sense circuit principle
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The 6SD106E sixpath driver has a
collector-sense circuit
to protect the power
semiconductors. It is
shown in Fig. 4
Its basic operating
mode can be obtained
from
the
brochure
entitled:
“Description
and
Application Manual
for Scale Drivers”.
To correspond more
effectively to the turnon characteristic of
the IGBTs, the SCALE
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Data Sheet 6SD106E
drivers do not use a static reference
voltage to compare the voltage at the
collector. Instead, the reference is
used as shown in Fig. 5.
+Vdc
Vce
Detail
Notes on Table 1
The values for “Vth1” and “Vth2” are
listed in Table 1 as a function of the
reference resistance Rth.
Vth
0V
The value in the “Vth1” column corresponds to the voltage threshold after
the response time has elapsed.
Response time
The value in the “Vth2” column corresponds to the voltage which is set up
statically across the resistor Rth. This
static value is typically reached after
between 10 and 15 µs.
Detail view
Vth1
Vce
Vth2
0V
The value in the “VCE(off)” column
corresponds to the collector-emitter
voltage value at which the protection
function is activated when the external
circuit is used as shown in Fig. 4 with
one or two Dm diodes of type
1N4007 connected in series.
Fig. 5 Collector-sense voltage curve
Value Rth
Reaction time
Vth1
Vth2
VCE(off)
22k
£ 4.9ms
£ 4.8V
£ 3.2V
2.35V (1 Diode)
27k
£ 5.7ms
£ 5.6V
£ 3.9V
3.05V (1 Diode)
33k
£ 6.8ms
£ 6.5V
£ 4.7V
3.25V (2 Diodes)
39k
£ 7.6ms
£ 7.3V
£ 5.6V
4.15V (2 Diodes)
47k
£ 9ms
£ 8.4V
£ 6.8V
5.35V (2 Diodes)
Table 1 Reference resistor, reaction time and turn-off threshold
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Data Sheet 6SD106E
Output power and self-heating
The specified output power of the driver totals 6W (1W per channel). This typically
suffices to drive a 100A/1200V six-pack IGBT module with 25kHz. In the case of a
drive power of 6W, the typical input power of the driver is about 7W; the losses due
to the driver total about 1 W. Because CONCEPT cannot predict how the drivers will
be incorporated in the user’s application, no binding recommended value for selfheating and thus for the maximum useful output power at high ambient temperatures
can be made. It is consequently recommended to check the self-heating of the system,
especially when it is used at higher temperatures.
For the calculation of the exact output power, reference should be made to
Application Note AN-9701 “IGBT drivers correctly calculated” from CONCEPT.
If you need any help, simply call our technical support
CONCEPT offers you expert help for your questions and problems:
E-Mail: support@ct-concept.com or on the Internet: www.CT-CONCEPT.com
Fax international ++41 32 / 322 22 51 (in Switzerland: 032 / 322 22 51)
Tel international ++41 32 / 322 42 36 (in Switzerland: 032 / 322 42 36)
Quite special: customized SCALE drivers
If you need a power MOSFET or IGBT driver that is not included in the delivery range,
don’t hesitate to contact CONCEPT or your CONCEPT sales partner.
CONCEPT engineers have more than 15 years experience in the development and
manufacture of intelligent drivers for power MOSFETs and IGBTs and have already
implemented a large number of customized solutions.
Exclusion Clause
CONCEPT reserves the right to make modifications to its technical data and product
specifications at any time without prior notice. The general terms and conditions of
delivery of CT-Concept Technology Ltd. apply.
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Data Sheet 6SD106E
Ordering Information
Six-pack SCALE driver with ±6A gate current / ±15V gate voltage
Standard version (0...70°C)
Industry version (-40...+85°C)
6SD106EN
6SD106EI
Additional Products and Information
Drivers for high isolation voltages (i.e. railroad applications)
Please request further information
Other intelligent drivers (i.e. half-bridge drivers etc.)
Please ask for following overviews from CONCEPT (also to be found on the Internet):
“Overview of Intelligent Drivers Standard Program”
“Overview of SCALE Drivers”
Evaluation boards
Please ask for following overview from CONCEPT (also to be found on the Internet):
“Overview and Price List of Evaluation-Boards”
Manufacturer
Your Distribution Partner
CT-Concept Technology Ltd.
Intelligent Power Electronics
Hauptstrasse 3
CH-2533 Leubringen / Evilard
(Switzerland)
Tel ++41 (0)32 / 322 42 36
Fax ++41 (0)32 / 322 22 51
E-Mail info@ct-concept.com
Internet www.CT-CONCEPT.com
Internet www.IGBT-Driver.com
 Copyright 1998 by CT-Concept Technology Ltd. - Switzerland.
We reserve the right to make any technical modifications without prior notice.
Page 12
All rights reserved.
Version from 17.11.98
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