ANSALDO Via N. Lorenzi 8 - I 16152 GENOVA - ITALY Tel. int. +39/(0)10 6556549 - (0)10 6556488 Fax Int. +39/(0)10 6442510 Tx 270318 ANSUSE I - Ansaldo Trasporti s.p.a. Unita' Semiconduttori FAST SWITCHING THYRISTOR ATF1040 FINAL SPECIFICATION Repetitive voltage up to Mean on-state current Surge current Turn-off time 2000 1075 14 50 V A kA µs mag 97 - ISSUE : 06 Symbol Characteristic Tj [°C] Conditions Value Unit BLOCKING V RRM Repetitive peak reverse voltage 125 2000 V V V RSM Non-repetitive peak reverse voltage 125 2100 V DRM Repetitive peak off-state voltage 125 2000 V I RRM Repetitive peak reverse current V=VRRM 125 150 mA I DRM Repetitive peak off-state current V=VDRM 125 150 mA 1075 A CONDUCTING I T (AV) Mean on-state current 180° sin, 50 Hz,Th=55°C, double side cooled I T (AV) Mean on-state current 180° sin, 1 kHz,Th=55°C, double side cooled I TSM Surge on-state current, non repetitive sine wave, 10 ms I² t I² t without reverse voltage V T On-state voltage On-state current = V T(TO) Threshold voltage 125 1.40 V T On-state slope resistance 125 0.414 mohm r 125 1000 A 14 kA 980 x1E3 2000 A 25 2.6 A²s V SWITCHING di/dt Critical rate of rise of on-state current, min From 75% VDRM up to 1200 A, gate 10V 5 ohm 125 500 A/µs dv/dt Critical rate of rise of off-state voltage, min Linear ramp up to 70% of VDRM 125 500 V/µs td Gate controlled delay time, typical VD=100V, gate source 20V, 10 ohm , tr=1 µs 25 0.6 µs tq Circuit commutated turn-off time 125 50 µs Q rr Reverse recovery charge di/dt = dV/dt = 20 A/µs, I= I1000 = 800 A 200 V/µs , up to 75% A VDRM di/dt = 60 A/µs, I= I1000 = 1000 A A VR = 50 V I rr Peak reverse recovery current I H Holding current, typical VD=5V, gate open circuit I L Latching current, typical VD=5V, tp=30µs 125 620 µC 227 A 25 500 mA 25 850 mA GATE V GT Gate trigger voltage VD=5V 25 3.5 V I GT Gate trigger current VD=5V 25 350 mA V GD Non-trigger gate voltage, min. VD=VDRM 125 0.25 V V FGM Peak gate voltage (forward) 25 30 V I FGM Peak gate current 25 10 A V RGM Peak gate voltage (reverse) 25 5 V P GM Peak gate power dissipation 25 150 W P G(AV) Average gate power dissipation 25 3 W R th(j-h) Thermal impedance, DC 26 °C/kW T j Operating junction temperature Pulse width 100 µs MOUNTING F Junction to heatsink, double side cooled Mounting force Mass -30 / 125 °C 14.0 / 17.0 kN 500 tq code ORDERING INFORMATION : ATF1040 S 20 S standard specification tq code VDRM&VRRM/100 D 10 µs C 12 µs B 15 µs A 20 µs L 25 µs M 30 µs N 35 µs P 40 µs R 45 µs S 50 µs T 60 µs U 70 µs W 80 µs X 100µs Y 150µs g ANSALDO ATF1040 FAST SWITCHING THYRISTOR FINAL SPECIFICATION mag 97 - ISSUE : 06 SWITCHING CHARACTERISTICS REVERSE RECOVERY CHARGE Tj = 125 °C 1800 1000 A 1600 1400 500 A Qrr [µC] 1200 1000 250 A 800 600 400 200 0 0 50 100 150 200 250 300 350 di/dt [A/µs] REVERSE RECOVERY CURRENT Tj = 125 °C 1000 1000 A 500 A 800 250 A Irr [A] 600 400 200 0 0 50 100 150 200 250 300 350 di/dt [A/µs] ta = Irr / (di/dt) tb = trr - ta di/dt IF ta Softness (s factor) s = tb / ta Irr Energy dissipation during recovery Er = Vr · (Qrr - Irr ·ta / 2 ) tb Vr ANSALDO ATF1040 FAST SWITCHING THYRISTOR FINAL SPECIFICATION mag 97 - ISSUE : 06 SURGE CHARACTERISTIC Tj = 125 °C 3500 14 3000 12 2500 10 ITSM [kA] On-state Current [A] ON-STATE CHARACTERISTIC Tj = 125 °C 2000 1500 8 6 1000 4 500 2 0 0 0.6 1.1 1.6 2.1 2.6 1 10 On-state Voltage [V] n° cycles TRANSIENT THERMAL IMPEDANCE DOUBLE SIDE COOLED 35 30 Zth j-h [°C/kW] 25 20 15 10 5 0 0.001 0.01 0.1 1 10 100 t[s] Cathode terminal type DIN 46244 - A 4.8 - 0.8 Gate terminal type AMP 60598 - 1 Distributed by All the characteristics given in this data sheet are guaranteed only with clamping force, cleaned and lubricated heatsink, surfaces with flatness < and roughness < 2 µm. In the interest of product improvement ANSALDO reserves the right to any data given in this data sheet at any time without previous notice. If not stated otherwise the maximum value of ratings (simbols over background) and characteristics is reported. uniform .03 mm change shaded 100