ETC LD1014D

PWRLITE LD1014D
High Performance N-Channel POWERJFETTM with PN Diode
Features
Description
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The Power JFET transistor from Lovoltech is a device that
presents a Low Rdson allowing for improved efficiencies in DCDC switching applications. The device is designed with a low
threshold such that drivers can operate at 5V, which reduces the
driver power dissipation and increases the overall efficiency.
Lower threshold produces faster turn-on/turn-off, which
minimizes the required dead time. A PN Diode is added for
applications where a freewheeling diode is required.
This product has tin plated leads.
Superior gate charge x Rdson product (FOM)
Trench Power JFET with low threshold voltage Vth.
Device fully “ON” with Vgs = 0.7V
Optimum for “Low Side” Buck Converters
Excellent for high frequency dc/dc converters
Optimized for Secondary Rectification in isolated DC-DC
Low Rg and low Cds for high speed switching
Applications
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DC-DC Converters
Synchronous Rectifiers
PC Motherboard Converters
Step-down power supplies
Brick Modules
VRM Modules
DPAK Lead-free Pin Assignments
D
G
D
G
S
S
N – Channel Power JFET
with PN Diode
Pin Definitions
Pin Number
1
2
3
Pin Name
Gate
Drain
Source
Pin Function Description
Gate. Transistor Gate
Drain. Transistor Drain
Source. Transistor Source
VDS (V)
24V
Product Summary
Rdson (Ω)
0.0065
ID (A)
501
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Gate-Drain Voltage
Continuous Drain Current
Pulsed Drain Current
Single Pulse Drain-to-Source Avalanche Energy at 25°C
(VDD= 6VDC, IL=60APK, L=0.3mH, RG=100 Ω)
Junction Temperature
Storage Temperature
Lead Soldering Temperature, 10 seconds
Power Dissipation (Derated at 25°C)
Symbol
VDS
VGS
VGD
ID
ID
EAS
Ratings
24
-12
-28
501
100
200
Units
V
V
V
A
A
mJ
TJ
TSTG
T
PD
-55 to 150°C
-65 to 150°C
260°C
69
°C
°C
°C
W
LD1014D Rev 1.05 03-05
Thermal Resistance
Symbol
RΘJA
RΘJC
Parameter
Thermal Resistance Junction-to-Ambient
Thermal Resistance Junction-to-Case
DPAK
Ratings
90
1.8
Units
°C/W
°C/W
Electrical Specifications
(TA = +25°C, unless otherwise noted.)
The φ denotes a specification which apply over the full operating temperature range.
Symbol
Parameter
Conditions
Min.
Static
BVDSX
Breakdown Voltage
ID = 0.5 mA
24
Drain to Source
VGS= -4 V
BVGDO
Breakdown Voltage
IG = -50µA
Gate to Drain
BVGSO
Breakdown Voltage
IG = -50µA
Gate to Source
RDS(ON)
Drain to Source On
IG = 40 mA, ID=10A
Resistance2
IG = 10 mA, ID=10A
IG = 5 mA, ID=10A
VGS(TH)
Gate Threshold Voltage
VDS=0.1 V, ID=250µA
TCVGSTH Temperature Coefficient of
VDS=0.1 V, ID=250µA
Gate Threshold Voltage
Dynamic
QGsync
Total Gate Charge Sync JFET ∆VDrive =5V,VDS=0.1V (Fig. 2)
QG
Total Gate Charge
∆VDrive =5V, ID=10A,VDS=15V
QGD
Gate to Drain Charge
VDS=13.5V to VDS=1.5V
QGS
Gate to Source Charge
VGS =-4.5V to VDS=13.5V
QSW
Switching Charge
VGS =-2V to VDS=1.5V
RG
Gate Resistance
TD(ON)
Turn-on Delay Time
VDD=15V, ID=10A
TR
Rise Time
VDrive = 5 V
TD(OFF)
Turn-off Delay
Resistive
Load
TF
Fall Time
CISS
Input Capacitance
COSS
Output Capacitance
VDS=10V, VGS= -5 V, 1MHz.
CGS
Gate-Source Capacitance
(see Fig. 4)
CGD
Gate-Drain Capacitance
CDS
Drain-Source Capacitance
PN Diode
IR
Reverse Leakage
VR=20V, Vgs = -4V
VF
Forward Voltage
IF = 1 A
VF
Forward Voltage
IF = 10 A
VF
Forward Voltage
IF = 20 A
Qrr
Reverse Recovery Charge
Is = 10 A di/dt = 100A/us,
Trr
Reverse Recovery Time
Is = 10 A di/dt = 100A/us,
Notes:
1. Current is limited by bondwire; with an Rthjc = 1.8 oC/W the chip is able to carry 80A.
2. Pulse width <= 500µs, duty cycle < = 2%
2
LD1014D
Typ.
Max.
28
Units
V
-32
-28
V
-14
-12
V
4.6
4.8
4.9
-1
-2.6
6.5
7.0
mΩ
mΩ
V
mV/oC
9.8
12.4
8.1
4.3
9.1
0.7
5.5
12.6
10.3
6.6
1147
467
784
363
104
nC
nC
nC
nC
nC
Ω
ns
pF
0.3
812
932
1010
7
13.3
mA
mV
mV
mV
nC
ns
Lovoltech, Inc. - 3970 Freedom Circle - Santa Clara, CA 95054 -USA
Tel. 1 408 654 1980 Fax 1 408 654 1988 www.lovoltech.com
Product Specification
Typical Operating Characteristics
(TA = +25°C, unless otherwise noted.)
LD1014D, Qg vs Vgs, VDS=0.1V.
8
1.0
RDS(mOhms)
7
0.5
0.0
6
-0.5
-1.0
Vgs(V)
5
4
-1.5
-2.0
-2.5
3
-3.0
-3.5
2
1.0E-05
-4.0
1.0E-04
1.0E-03
1.0E-02
1.0E-01
-4.5
1
IG(A)
3
7
11
13
15
Figure 2 – Gate Charge Qgsync for VDS=0.1V
50
LD1014D Capacitance vs. Vds, Vgs=-5v
45
1600
40
1400
35
1200
25
1000
C (pF)
30
20
15
10
Ciss
800
600
Coss
400
5
Crss
200
0
0
5
10
15
20
25
0
30
0
5
10
10
Figure 3 – Breakdown Voltage Vds vs Id
20
20
25
25
Figure 4 – Capacitance vs Drain Voltage Vds
ID vs VGS, VDS=12V and VDS=0.1V
0.10
0.09
0.08
0.07
0.06
ID(A)
0.05
0.04
0.03
0.02
0.01
0.00
0.00
15
15
Vds (volts)
V D S (V )
IG(A)
9
Qg(nC)
Figure 1 – RDSON vs Gate Current at ID – 10A
ID (mA)
5
0.20
0.40
VGS(V)
Figure 5 – IG vs Gate Voltage VGS
0.60
0.80
0.50
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
VDS = 12V
VDS = 0.1V
-5
-4
-3
-2
VGS(V)
-1
0
1
Figure 6 – Transfer Characteristic
Lovoltech, Inc. - 3970 Freedom Circle - Santa Clara, CA 95054 -USA
Tel. 1 408 654 1980 Fax 1 408 654 1988 www.lovoltech.com
LD1014D
Product Specification
3
Typical Operating Characteristics
(TA = +25°C, unless otherwise noted.)
1.8
50
1.6
40
1.5
35
1.4
1.3
ID vs VDS LD1014D, Tc = 25 o C
I G = 1µA
45
ID(A)
Normalized Rds
1.7
I G = 1mA
V GS = 0.5V
V GS = 0V
30
25
V G S =- 0.5V
20
15
1.2
10
1.1
V G S = -1V
5
1.0
0
0
50
T emp(C)
100
150
0
Figure 7 – RDSON =f(T); ID = -10A; IG = 40mA
1
2
VDS(V)
3
4
Figure 8 – ID vs VDS Characteristics
0
100
10µs
-4
-6
Id, Drain Current (A)
ID (Amps)
-2
-8
-10
-12
-14
-16
-18
-20
-1.10
Ig = 40mA
Single Pulse
Tc = 25°C
10
10ms
DC
Rdson Limit
Thermal Limit
Package Limit
1
-1.00
-0.90
-0.80
-0.70
-0.60
0.1
-0.50
Figure 9 – PN Diode Voltage vs Current
1
10
100
Vds, Drain-to-Source Voltage (V)
Figure 10 – Safe Operating Area
Total Power Dissipation (W)
75
100µs
1ms
VDS (Volts)
ZthJA = f(tp) (parameter D= tp/T)
1.E+00
60
D = 0.5
0.2
45
ZthJA (K/W)
Ptot (W)
5
30
15
0.1
1.E-01
P(pk)
0.05
tp
0.02
T
Note:
1.
Duty Factor D = tp/T
2.
Peak Tj = P(pk)*ZthJA + TA
0.01
Single Pulse
0
0
50
100
150
Temperature (C)
Figure 11 – Total Power Dissipation
4
LD1014D
200
1.E-02
1.E-05
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
tp (s)
Figure 12 – Normalized Thermal Response
Lovoltech, Inc. - 3970 Freedom Circle - Santa Clara, CA 95054 -USA
Tel. 1 408 654 1980 Fax 1 408 654 1988 www.lovoltech.com
Product Specification
Ordering Information
Product Number
LD1014D
PN Marking
LD1014D
Package
TO252 (DPAK)
Notes:
This product is Pb-Free and has Tin Plated leads
Package and Marking Information:
DIMENSIONS
5.40
1.25
2.60
9.65
5.60
1.75
2.80
9.75
0.213
0.049
0.102
0.380
E
LD1014D
XXXXX
XXXX
DPAK
L2
B2
D
MAX.
0.094
0.045
0.005
0.045
0.035
0.215
0.023
0.023
0.245
A
C2
A2
L4
R
A1
e
C
b
0.265
0.410
0.050
0.140
0.040
b1
Back View
D1
inch
MAX. TYP. MIN.
2.40
0.086
1.14
0.035
0.13
0.001
1.14
0.030
0.90
0.022
5.46
0.205
0.60
0.017
0.58
0.017
6.22
0.235
0.208
6.73
0.250
0.090
10.42
0.368
1.27
0.035
3.57
0.073
1.02
0.025
0.008
L3
A
A1
A2
b
b1
B2
C
C2
D
D1
E
e
H
L2
L3
L4
R
Alternate
D
L2
L3
H
mm.
TYP. MIN.
2.19
0.89
0.03
0.76
0.55
5.20
0.45
0.45
5.97
5.30
6.35
2.28
9.35
0.88
1.86
0.64
0.20
H
DIM.
0.220
0.069
0.110
0.384
Life Support Policy
LOVOLTECH’s PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES
OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF LOVOLTECH, Inc. As used herein:
1. Life support devices or systems are devices or systems which (a) are intended for surgical implant into the body, or (b) support or
sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling can
be reasonably expected to result in a significant injury of the user.
2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to
cause the failure of the life support device or system, or to affect its safety or effectiveness.
Datasheet Identification
Advance Information
Preliminary
Product Status
In definition or in
Design
Initial Production
No Identification Needed
In Production
Definition
This datasheet contains the design specifications for product development.
Specifications may change without notice.
This datasheet contains preliminary data; additional and application data will be
published at a later date. Lovoltech, Inc. reserves the right to make changes at any
time without notice in order to improve design.
This datasheet contains final specifications. Lovoltech reserves the right to make
changes at any time without notice in order to improve the design.
Lovoltech, Inc. - 3970 Freedom Circle - Santa Clara, CA 95054 -USA
Tel. 1 408 654 1980 Fax 1 408 654 1988 www.lovoltech.com
LD1014D
Product Specification
5