一華半導體股份有限公司 PIR CONTROLLER MOSDESIGN SEMICONDUCTOR CORP. M7616 DC PIR CONTROLLER GENERAL DESCRIPTION The M7616 is a low power PIR ( passive infra-red ) controller LSI designed for battery powered can be used in many application. The chip contains operation amplifiers, comparators, timer ,a voltage regulator, 2 oscillator and control circuits. An CDS device is installed externally to cut off the operation of M7616 during the day time. FEATURES ‧ High noise immunity. ‧ Low stand-by current < 50μA @3.0V ‧ RELAY Driver only. ‧ Adjustable play on duration and latch duration. ‧ CDS input conditionally. ‧ 16 pin DIP or SOP package. APPLICATIONS ‧ PIR light controller, Motion Detector, Alarm system, Auto-door bell. PIN DESCRIPTION PIN Pin Name I/O 1 RETG 2 Relay M7616P Description Trigger type selection I VDD：Retrigger；VSS：Non-Retrigger 7 VSS O Relay driver output through external NPN transistor. Active high. Delay timing oscillator connect to external RC to adjust output active ─ duration when trigged. output active duration Tx ≈110000xR10xC6。 Trigger latch timing oscillator connect to external RC to adjust latch ─ active duration when trigged. latch active duration Ti ≈110xR9xC7。 ─ Negative power supply 8 RESET I Normally connect to VDD, connect to VSS to reset Timer . CDS Connect to the CDS voltage divider for daytime/night auto detecting,. I When Vcds<VR daytime；When Vcds >VR night (VR≈0.2VDD) 3,4 RR1/ RC1 5,6 RC2/ RR2 9 11 VDD ─ Positive power supply 12 2OUT O 2nd Stage Operation amplifier output 13 2IN- I 2nd Stage Operation amplifier negative input 14 1IN+ I First Stage Operation amplifier positive input 15 1IN- I First Stage Operation amplifier negative input 16 1OUT O First Stage Operation amplifier output 1/4 RETG 1 16 1OUT 1IN- RELAY RR1 1IN+ RC1 2IN- RC2 2OUT RR2 VDD VSS RESET 8 2007-03-12 9 CDS 一華半導體股份有限公司 PIR CONTROLLER MOSDESIGN SEMICONDUCTOR CORP. M7616 DC PIR CONTROLLER BLOCK DIAGRAM RR2 Ti OSC RC2 LATCH TIMMER Tx OSC RR1 RC1 RELAY CONTROL DELAY TIMMER LOGIC RESET RETG + CDS 0.2VDD - WINDOW + 1IN+ 1IN- + - - 0.7VDD 1OUT 0.5VDD 2IN- + PULSE WIDTH DETECTOR + - 0.3VDD - DETECTOR 2OUT 0.7VDD REF. 0.5VDD VOLTAGE 0.3VDD 0.2VDD (TA=25℃) ABSOLUTE MAXIMUM RATING Parameter Power Supply VDD With Respect to VSS Voltage On Any Pin Operating Temperature Storage Temperature Sym. VDD - VSS Rating 6 -0.3 to 6 -20 to 70 -65 to 150 Top Unit V V ℃ ℃ (TA=25℃) ELECTRICAL CHARACTERISTICS Characteristics Supply Voltage Sym. VDD Operating Current IDD “H” Transfer Voltage “L” Transfer Voltage OP Amp Open Loop Gain OP Amp Input Offset Voltage CDS “H” Transfer Voltage Relay Source Current VIH VIL AVO Vos Vcds+ IRS Min. 2.0 — — — 60 ─ — — 2/4 Typ. 4.5 — — 0.7 VDD 0.3 VDD 80 10 0.2VDD — Max. 5.5 50 70 — 0.3 VDD — 35 — 10 Unit V Conditions μA No load @3.0 volt No load @5.0 volt V V dB mV V mA No load No load 2007-03-12 一華半導體股份有限公司 PIR CONTROLLER MOSDESIGN SEMICONDUCTOR CORP. M7616 DC PIR CONTROLLER NON-RETRIGGER (RETG=VSS) 0.7VDD Signal on UOU2 PIN 0.3VDD Pulse width detector RETG pin CDS pin RELAY pin Tx Ti Tx Ti Delay time Tx ≈110000x R10xC6 Latch time Ti ≈110x R9xC7 RETRIGGER (TRTG=VDD) Signal on UOU2 PIN 0.7VDD 0.3VDD Pulse width detector RETG pin CDS pin RELAY pin Tx Delay time Tx ≈110000xR10xC6 3/4 Tx Ti Ti Latch time Ti ≈110xR9xC7 2007-03-12 一華半導體股份有限公司 PIR CONTROLLER MOSDESIGN SEMICONDUCTOR CORP. M7616 DC PIR CONTROLLER APPLICATION DIAGRAM 12V 2~5V M7616P RELAY RETG R11 1K R10 1 16 1OUT C4 0.033μF 1IN- RELAY RR1 1IN+ RC1 2IN- RC2 2OUT RR2 VDD R1 47K R7 820K C1 0.01μF PIR 15K 1.5M R6 C3 33μF /16V C2 0.033μF R9 VSS R2 CDS RESET C6 8 C7 680K R8 15K 9 C5 33μF /16V CDS Delay Time C6=100pF R10=360KΩ R10 FTX TX C6 FTX TX 820 KΩ 750 KΩ 680 KΩ 560 KΩ 430 KΩ 300 KΩ 270 KΩ 180 KΩ 100 KΩ 5.8 KHz 6.3 KHz 6.8 KHz 8.3 KHz 10.6 KHz 15.4 KHz 16.9 KHz 25.0 KHz 48.8 KHz 9 sec 8 sec 7.5 sec 6 sec 5 sec 3.5 sec 3 sec 2 sec 1.5 sec 250 pF 200 pF 180 pF 150 pF 120 pF 82 pF 68 pF 47 pF 33 pF 5.6 KHz 6.3 KHz 7.2 KHz 8.4 KHz 10.2 KHz 14.7 KHz 17.9 KHz 25.8 KHz 37.3 KHz 9 sec 8 sec 7 sec 6 sec 5 sec 4 sec 3 sec 2 sec 1.5 sec Latch Time C7=0.1uF R9 FTI TI 820 KΩ 750 KΩ 680 KΩ 560 KΩ 430 KΩ 270 KΩ 6 Hz 6.4 Hz 6.8 Hz 8.4 Hz 11.1 Hz 17.8 Hz 9 sec 7.5 sec 6 sec 5 sec 4 sec 2 sec * All specs and applications shown above subject to change without prior notice. (以上電路及規格僅供參考,本公司得逕行修正) 4/4 2007-03-12