P5506NVG N- & P-Channel Enhancement Mode Field Effect Transistor NIKO-SEM SOP-8 Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID N-Channel 60 55mΩ 4.5A P-Channel -55 80mΩ -3.5A G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL N-Channel P-Channel UNITS Drain-Source Voltage VDS 60 -55 V Gate-Source Voltage VGS ±20 ±20 V 4.5 -3.5 4 -3 20 -20 TC = 25 °C Continuous Drain Current ID TC = 70 °C Pulsed Drain Current 1 IDM TC = 25 °C Power Dissipation 2 PD TC = 70 °C W 1.3 Junction & Storage Temperature Range Tj, Tstg -55 to 150 1 TL 275 Lead Temperature ( /16” from case for 10 sec.) A °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL Junction-to-Ambient TYPICAL RθJA MAXIMUM UNITS 62.5 °C / W 1 Pulse width limited by maximum junction temperature. Duty cycle ≤ 1% 2 ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) LIMITS PARAMETER SYMBOL TEST CONDITIONS MIN UNIT TYP MAX STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage VGS = 0V, ID = 250µA N-Ch 60 VGS = 0V, ID = -250µA P-Ch -55 VDS = VGS, ID = 250µA N-Ch 1.0 1.5 2.5 P-Ch -1.0 -1.5 -2.5 V(BR)DSS VGS(th) VDS = VGS, ID = -250µA Gate-Body Leakage VDS = 0V, VGS = ±20V N-Ch ±100 VDS = 0V, VGS = ±20V P-Ch ±100 IGSS 1 V nA AUG-17-2004 VDS = 48V, VGS = 0V Zero Gate Voltage Drain Current IDSS 1 P-Ch -1 VDS = 40V, VGS = 0V, TJ = 55 °C N-Ch 10 P-Ch -10 VDS = -36V, VGS = 0V, TJ = 55 °C On-State Drain Current1 ID(ON) VDS = 5V, VGS = 10V VDS =-5V, VGS = -10V N-Ch 20 P-Ch -20 A 55 75 P-Ch 90 150 N-Ch 42 55 P-Ch 60 80 N-Ch 14 P-Ch 9 N-Ch 650 N-Channel P-Ch 760 VGS = 0V, VDS = 25V, f = 1MHz N-Ch 80 P-Channel P-Ch 90 VGS = 0V, VDS = -30V, f = 1MHz N-Ch 35 P-Ch 40 N-Channel VDS = 0.5V(BR)DSS, VGS = 10V, N-Ch 12.5 18 P-Ch 15 21 ID = 4.5A N-Ch 2.4 P-Channel P-Ch 2.5 VDS = 0.5V(BR)DSS, VGS = -10V, N-Ch 2.6 ID = -3.5A P-Ch 3.0 VGS = -4.5V, ID = -3A mΩ RDS(ON) VGS = 10V, ID = 4.5A VGS = -10V, ID = -3.5A Forward Transconductance1 µA N-Ch VGS = 4.5V, ID = 4A On-State SOP-8 Lead-Free N-Ch VDS = -44V, VGS = 0V Drain-Source Resistance1 P5506NVG N- & P-Channel Enhancement Mode Field Effect Transistor NIKO-SEM gfs VDS = 10V, ID = 4.5A VDS = -5V, ID = -3.5A S DYNAMIC Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge2 Qg Gate-Source Charge2 Qgs Gate-Drain Charge2 Qgd 2 pF nC AUG-17-2004 N- & P-Channel Enhancement Mode Field Effect Transistor NIKO-SEM Turn-On Delay Time2 Rise Time2 tr Turn-Off Delay Time2 N-Channel td(on) N-Ch 11 20 P-Ch 7 14 N-Ch 8 18 ID ≅ 1A, VGS = 10V, RGEN = 6Ω P-Ch 10 20 N-Ch 19 35 P-Ch 19 34 N-Ch 6 15 ID ≅ -1A, VGS = -10V, RGEN = 6Ω P-Ch 12 22 P-Channel td(off) tf SOP-8 Lead-Free VDD = 30V VDD = -30V Fall Time2 P5506NVG nS SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C) Continuous Current 3 IS Pulsed Current ISM Forward Voltage1 VSD IF = IS A, VGS = 0V IF = IS A, VGS = 0V N-Ch 1.3 P-Ch -1.3 N-Ch 2.6 P-Ch -2.6 N-Ch 1 P-Ch -1 A V Pulse test : Pulse Width ≤ 300 µsec, Duty Cycle ≤ 2%. Independent of operating temperature. 3 Pulse width limited by maximum junction temperature. 1 2 REMARK: THE PRODUCT MARKED WITH “P5506NVG”, DATE CODE or LOT # Orders for parts with Lead-Free plating can be placed using the PXXXXXXG parts name. 3 AUG-17-2004 NIKO-SEM P5506NVG N- & P-Channel Enhancement Mode Field Effect Transistor SOP-8 Lead-Free N-CHANNEL Body Diode Forward Voltage Variation with Source Current and Temperature 100 V GS = 0V Is - Reverse Drain Current(A) 10 T A = 125° C 1 25° C 0.1 -55° C 0.01 0.001 0.0001 0 4 0.6 0.2 0.4 0.8 VSD - Body Diode Forward Voltage(V) 1.0 1.2 AUG-17-2004 NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor 5 P5506NVG SOP-8 Lead-Free AUG-17-2004 NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor P5506NVG SOP-8 Lead-Free P-CHANNEL Body Diode Forward Voltage Variation with Source Current and Temperature 100 V GS = 0V -Is - Reverse Drain Current(A) 10 1 T A = 125° C 0.1 25° C -55° C 0.01 0.001 0 6 0.2 0.6 0.8 1.0 0.4 -VSD - Body Diode Forward Voltage(V) 1.2 1.4 AUG-17-2004 NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor 7 P5506NVG SOP-8 Lead-Free AUG-17-2004 P5506NVG N- & P-Channel Enhancement Mode Field Effect Transistor NIKO-SEM SOP-8 Lead-Free SOIC-8(D) MECHANICAL DATA mm mm Dimension Dimension Min. Typ. Max. Min. Typ. Max. A 4.8 4.9 5.0 H 0.5 0.715 0.83 B 3.8 3.9 4.0 I 0.18 0.254 0.25 C 5.8 6.0 6.2 J D 0.38 0.445 0.51 K 1.27 E 0.22 0° 4° 8° L F 1.35 1.55 1.75 M G 0.1 0.175 0.25 N J F D E I G B H K C A 8 AUG-17-2004